FQPF13N50C中文资料

Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
10.0 V
8.0 V
7.0 V
101
6.0 V 5.5 V
5.0 V
Bottom : 4.5 V
100 10-1
10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
FQP13N50C/FQPF13N50C
元器件交易网
Electrical Characteristics
Symbol
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
元器件交易网
FQP13N50C/FQPF13N50C
Typical Characteristics
ID, Drain Current [A]
VGS Top : 15.0 V
100
101
V , Drain-Source Voltage [V] DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
1.5 VGS = 10V
1.0
VGS = 20V
0.5 ※ Note : TJ = 25℃
0
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
ID, Drain Current [A]
101 150oC
25oC 100
-55oC
10-1 2
※ Notes :
1. 2.
V25DS0μ=
40V s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
13
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
52
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1 10 100 -100
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13 A, RG = 25 Ω
-- 25
60
ns
-- 100 210
2. L =6.0 mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
Capacitance [pF]
3000 2500 2000 1500 1000 500
0 10-1
Ciss Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
※ Notes ; 1. VGS = 0 V 2. f = 1 MHz
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1580 2055 pF
-- 180 235
pF
-- 20
25
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
● ●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Features
• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V • Low gate charge ( typical 43 nC) • Low Crss ( typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 13 A,
-- 410
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
4.5
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ns
-- 130 270
ns
(Note 4, 5)
--