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MEMORY存储芯片MT29F2G16ABBEAHC-IT_E中文规格书

ArchitectureThese devices use NAND Flash electrical and command interfaces. Data, commands,and addresses are multiplexed onto the same pins and received by I/O control circuits.The commands received at the I/O control circuits are latched by a command register and are transferred to control logic circuits for generating internal signals to control de-vice operations. The addresses are latched by an address register and sent to a row de-coder to select a row address, or to a column decoder to select a column address.Data is transferred to or from the NAND Flash memory array, byte by byte (x8) or word by word (x16), through a data register and a cache register.The NAND Flash memory array is programmed and read using page-based operations and is erased using block-based operations. During normal page operations, the data and cache registers act as a single register. During cache operations, the data and cache registers operate independently to increase data throughput. The status register reports the status of die operations.Figure 8: NAND Flash Die (LUN) Functional Block DiagramLOCK Note:1.The LOCK pin is used on the 1.8V device.Erase OperationsErase operations are used to clear the contents of a block in the NAND Flash array toprepare its pages for program operations.Erase OperationsThe ERASE BLOCK (60h-D0h) command, when not preceded by the ERASE BLOCKTWO-PLANE (60h-D1h) command, erases one block in the NAND Flash array. When thedie (LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify thatthis operation completed successfully.TWO-PLANE ERASE OperationsThe ERASE BLOCK TWO-PLANE (60h-D1h) command can be used to further systemperformance of erase operations by allowing more than one block to be erased in theNAND array. This is done by prepending one or more ERASE BLOCK TWO-PLANE (60h-D1h) commands in front of the ERASE BLOCK (60h-D0h) command. See Two-PlaneOperations for details.ERASE BLOCK (60h-D0h)The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flasharray. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).To erase a block, write 60h to the command register. Then write three address cyclescontaining the row address; the page address is ignored. Conclude by writing D0h to thecommand register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for t BERSwhile the block is erased.To determine the progress of an ERASE operation, the host can monitor the target'sR/B# signal, or alternatively, the status operations (70h, 78h) can be used. When the die(LUN) is ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.In devices that have more than one die (LUN) per target, during and following inter-leaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) commandmust be used to select only one die (LUN) for status output. Use of the READ STATUS(70h) command could cause more than one die (LUN) to respond, resulting in bus con-tention.The ERASE BLOCK (60h-D0h) command is used as the final command of an erase two-plane operation. It is preceded by one or more ERASE BLOCK TWO-PLANE (60h-D1h)commands. All blocks in the addressed planes are erased. The host should check thestatus of the operation by using the status operations (70h, 78h). See Two-Plane Opera-tions for two-plane addressing requirements.Figure 46: ERASE BLOCK (60h-D0h) OperationI/O[7:0]RDYERASE BLOCK TWO-PLANE (60h-D1h)The ERASE BLOCK TWO-PLANE (60h-D1h) command queues a block in the specifiedplane to be erased in the NAND Flash array. This command can be issued one or moretimes. Each time a new plane address is specified, that plane is also queued for a blockto be erased. To specify the final block to be erased and to begin the ERASE operationfor all previously queued planes, issue the ERASE BLOCK (60h-D0h) command. Thiscommand is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).To queue a block to be erased, write 60h to the command register, then write three ad-dress cycles containing the row address; the page address is ignored. Conclude by writ-ing D1h to the command register. The selected die (LUN) will go busy (RDY = 0, ARDY =0)for t DBSY.To determine the progress of t DBSY, the host can monitor the target's R/B# signal, oralternatively, the status operations (70h, 78h) can be used. When the LUN's statusshows that it is ready (RDY = 1, ARDY = 1), additional ERASE BLOCK TWO-PLANE (60h-D1h) commands can be issued to queue additional planes for erase. Alternatively, theERASE BLOCK (60h-D0h) command can be issued to erase all of the queued blocks.For two-plane addressing requirements for the ERASE BLOCK TWO-PLANE (60h-D1h)and ERASE BLOCK (60h-D0h) commands, see Two-Plane Operations.Figure 47: ERASE BLOCK TWO-PLANE (60h–D1h) OperationCycle typeI/O[7:0]RDYInternal Data Move OperationsInternal data move operations make it possible to transfer data within a device fromone page to another using the cache register. This is particularly useful for block man-agement and wear leveling.The INTERNAL DATA MOVE operation is a two-step process consisting of a READ FORINTERNAL DATA MOVE (00h-35h) and a PROGRAM FOR INTERNAL DATA MOVE(85h-10h) command. To move data from one page to another on the same plane, firstissue the READ FOR INTERNAL DATA MOVE (00h-35h) command. When the die (LUN)is ready (RDY = 1, ARDY = 1), the host can transfer the data to a new page by issuing thePROGRAM FOR INTERNAL DATA MOVE (85h-10h) command. When the die (LUN) isagain ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that thisoperation completed successfully.To prevent bit errors from accumulating over multiple INTERNAL DATA MOVE opera-tions, it is recommended that the host read the data out of the cache register after theREAD FOR INTERNAL DATA MOVE (00h-35h) completes and prior to issuing the PRO-GRAM FOR INTERNAL DATA MOVE (85h-10h) command. The RANDOM DATA READ(05h-E0h) command can be used to change the column address. The host should checkthe data for ECC errors and correct them. When the PROGRAM FOR INTERNAL DATAMOVE (85h-10h) command is issued, any corrected data can be input. The PROGRAMFOR INTERNAL DATA INPUT (85h) command can be used to change the column ad-dress.It is not possible to use the READ FOR INTERNAL DATA MOVE operation to move datafrom one plane to another or from one die (LUN) to another. Instead, use a READ PAGE(00h-30h) or READ FOR INTERNAL DATA MOVE (00h-35h) command to read the dataout of the NAND, and then use a PROGRAM PAGE (80h-10h) command with data inputto program the data to a new plane or die (LUN).Between the READ FOR INTERNAL DATA MOVE (00h-35h) and PROGRAM FOR INTER-NAL DATA MOVE (85h-10h) commands, the following commands are supported: statusoperations (70h, 78h) and column address operations (05h-E0h, 06h-E0h, 85h). The RE-SET operation (FFh) can be issued after READ FOR INTERNAL DATA MOVE (00h-35h),but the contents of the cache registers on the target are not valid.In devices that have more than one die (LUN) per target, once the READ FOR INTER-NAL DATA MOVE (00h-35h) is issued, interleaved die (multi-LUN) operations are pro-hibited until after the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command isissued.Two-Plane Read for Internal Data Move OperationsTwo-plane internal data move read operations improve read data throughput by copy-ing data simultaneously from more than one plane to the specified cache registers. Thisis done by issuing the READ PAGE TWO-PLANE (00h-00h-30h) command or the READFOR INTERNAL DATA MOVE (00h-00h-35h) command.The INTERNAL DATA MOVE PROGRAM TWO-PLANE (85h-11h) command can be usedto further system performance of PROGRAM FOR INTERNAL DATA MOVE operationsby enabling movement of multiple pages from the cache registers to different planes ofthe NAND Flash array. This is done by prepending one or more PROGRAM FOR INTER-NAL DATA MOVE (85h-11h) commands in front of the PROGRAM FOR INTERNAL DA-TA MOVE (85h-10h) command. See Two-Plane Operations for details.Block Lock FeatureThe block lock feature protects either the entire device or ranges of blocks from beingprogrammed and erased. Using the block lock feature is preferable to using WP# to pre-vent PROGRAM and ERASE operations.Block lock is enabled and disabled at power-on through the LOCK pin. At power-on, ifLOCK is LOW, all BLOCK LOCK commands are disabled. However if LOCK is HIGH atpower-on, the BLOCK LOCK commands are enabled and, by default, all the blocks onthe device are protected, or locked, from PROGRAM and ERASE operations, even if WP#is HIGH.Before the contents of the device can be modified, the device must first be unlocked.Either a range of blocks or the entire device may be unlocked. PROGRAM and ERASEoperations complete successfully only in the block ranges that have been unlocked.Blocks, once unlocked, can be locked again to protect them from further PROGRAMand ERASE operations.Blocks that are locked can be protected further, or locked tight. When locked tight, thedevice’s blocks can no longer be locked or unlocked until the device is power cycled. WP# and Block LockThe following is true when the block lock feature is enabled:•Holding WP# LOW locks all blocks, provided the blocks are not locked tight.•If WP# is held LOW to lock blocks, then returned to HIGH, a new UNLOCK commandmust be issued to unlock blocks.UNLOCK (23h-24h)By default at power-on, if LOCK is HIGH, all the blocks are locked and protected fromPROGRAM and ERASE operations. The UNLOCK (23h) command is used to unlock arange of blocks. Unlocked blocks have no protection and can be programmed or erased.The UNLOCK command uses two registers, a lower boundary block address register andan upper boundary block address register, and the invert area bit to determine whatrange of blocks are unlocked. When the invert area bit = 0, the range of blocks withinthe lower and upper boundary address registers are unlocked. When the invert area bit= 1, the range of blocks outside the boundaries of the lower and upper boundary ad-dress registers are unlocked. The lower boundary block address must be less than theupper boundary block address. The figures below show examples of how the lower andupper boundary address registers work with the invert area bit.To unlock a range of blocks, issue the UNLOCK (23h) command followed by the appro-priate address cycles that indicate the lower boundary block address. Then issue the24h command followed by the appropriate address cycles that indicate the upper boun-dary block address. The least significant page address bit, PA0, should be set to 1 if set-ting the invert area bit; otherwise, it should be 0. The other page address bits should be0.Only one range of blocks can be specified in the lower and upper boundary block ad-dress registers. If after unlocking a range of blocks the UNLOCK command is again is-sued, the new block address range determines which blocks are unlocked. The previousunlocked block address range is not retained.。

MEMORY存储芯片MT29F2G08ABAEAWP-IT_E中文规格书

MEMORY存储芯片MT29F4G16ABADAWP-IT中文规格书

Device InitializationMicron NAND Flash devices are designed to prevent data corruption during powertransitions. V CC is internally monitored. (The WP# signal supports additional hardwareprotection during power transitions.) When ramping V CC , use the following procedureto initialize the device:1.Ramp V CC .2.The host must wait for R/B# to be valid and HIGH before issuing RESET (FFh) toany target. The R/B# signal becomes valid when 50µs has elapsed since the begin-ning the V CC ramp, and 10µs has elapsed since V CC reaches V CC (MIN).3.If not monitoring R/B#, the host must wait at least 100µs after V CC reaches V CC (MIN). If monitoring R/B#, the host must wait until R/B# is HIGH.4.The asynchronous interface is active by default for each target. Each LUN drawsless than an average of 10mA (I ST ) measured over intervals of 1ms until the RESET(FFh) command is issued.5.The RESET (FFh) command must be the first command issued to all targets (CE#s)after the NAND Flash device is powered on. Each target will be busy for 1ms after aRESET command is issued. The RESET busy time can be monitored by pollingR/B# or issuing the READ STATUS (70h) command to poll the status register.6.The device is now initialized and ready for normal operation.Figure 24: R/B# Power-On Behavioris issuedInvalidCC starts V CC R/B#Command Definitions Table 7: Command SetTable 7: Command Set (Continued)Notes: 1.Busy means RDY = 0.2.These commands can be used for interleaved die (multi-LUN) operations (see InterleavedDie (Multi-LUN) Operations (page 106)).3.Do not cross plane address boundaries when using READ for INTERNAL DATA MOVE andPROGRAM for INTERNAL DATA MOVE.4.These commands supported only with ECC disabled.5.Issuing a READ PAGE CACHE series (31h, 00h-31h, 3Fh) command when the array is busy(RDY = 1, ARDY = 0) is supported if the previous command was a READ PAGE (00h-30h)or READ PAGE CACHE series command; otherwise, it is prohibited.6.Issuing a PROGRAM PAGE CACHE (80h-15h) command when the array is busy (RDY = 1,ARDY = 0) is supported if the previous command was a PROGRAM PAGE CACHE(80h-15h) command; otherwise, it is prohibited.7.OTP commands can be entered only after issuing the SET FEATURES command with thefeature address.4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Command Definitions。

MEMORY存储芯片MT29F2G16ABDM59A3WC1中文规格书

Table 10: MR1 Register Definition (Continued)Note: 1.Not allowed when 1/4 rate gear-down mode is enabled.DLL Enable/DLL DisableThe DLL must be enabled for normal operation and is required during power-up initial-ization and upon returning to normal operation after having the DLL disabled. During normal operation (DLL enabled with MR1[0]) the DLL is automatically disabled when entering the SELF REFRESH operation and is automatically re-enabled upon exit of the SELF REFRESH operation. Any time the DLL is enabled and subsequently reset, t DLLK clock cycles must occur before a READ or SYNCHRONOUS ODT command can be is-sued to allow time for the internal clock to be synchronized with the external clock. Fail-4Gb: x8, x16 Automotive DDR4 SDRAM Mode Register 1Figure 62: MRS PDA Exit5Note: 1.R TT(Park) = Enable; R TT(NOM) = Enable; WRITE preamble set = 2t CK; and DLL = On.4Gb: x8, x16 Automotive DDR4 SDRAM Per-DRAM AddressabilityFigure 110: 1t CK vs. 2t CK WRITE Preamble Mode, t CCD = 5DQDQS_t,DQS_c1t CK ModeCK_tCK_cCMD2t CK Mode: t CCD = 5 is not allowed in 2t CK mode.Note: 1.t CCD_S and t CCD_L = 5 t CKs is not allowed when in 2t CK WRITE preamble mode.Figure 111: 1t CK vs. 2 t CK WRITE Preamble Mode, t CCD = 6DQDQS_t,DQS_c 1t CK ModeCK_tCK_cCMD2tCK Mode DQ DQS_t,DQS_c CK_tCK_cCMD4Gb: x8, x16 Automotive DDR4 SDRAM Programmable Preamble Modes and DQS Postambles。

《SDC32A12加密芯》课件

3
未来发展方向
展望加密芯在未来的发展趋势，探讨SDC32A12加密芯在此趋势中的潜力。
技术趋势和未来展望
加密数据保护提供参考。
SDC32A12加密芯在未来的前景分析
分析SDC32A12加密芯在未来市场需求中的前景，以及其在不同行业中的应用潜力。
结论
通过总结SFD32A12加密芯的特点和优势，我们可以看到它作为一种高安全性加密芯片的潜力和价值。
对未来加密芯的使用提出意见和建议
基于对SFD32A12加密芯的研究和了解，我们提出了关于未来加密芯应用的意见和建议，希望能对行业发展有所裨益。
了解加密芯的安全原理，可以帮助我们理解其在数据保护中的作用。
SDC32A12加密芯技术架构与特点
探索SDC32A12加密芯的技术架构和特点，以便更好地理解它的工作原理。
密码传输的加密和解密
了解密码传输中加密和解密的过程对于加密芯的应用至关重要。
应用场景
加密芯在通讯领域的应用
探索加密芯在通讯领域应用的各种可能性，包括数据保护和隐私安全。
SDC32A12加密芯的适用场景
介绍SDC32A12加密芯在不同场景下的应用，例如金融、电子商务和政府机构。
安全性对比
1
SDC32A12加密芯与其他加密芯的安全性对比
对比SDC32A12加密芯与其他加密芯的安全性特点，找出其在数据保护中的优势。
2
数据保护的挑战
解释现代数据保护所面临的挑战，并探讨SDC32A12加密芯如何应对这些挑战。
《SDC32A12加密芯》 PPT课件
SFD32A12加密芯是一种高度安全的加密芯片，通过其独特的技术原理和应用场景，为通信领域的信息保护提供了可靠的解决方案。

MEMORY存储芯片MT29F128G08CFABAWP_B中文规格书

READ LOCK REGISTERThe device is first selected by driving chip select (S#) LOW. The command code for theREAD LOCK REGISTER command is followed by a 3-byte address (A23-A0) pointing toany location inside the concerned sector (or subsector). Each address bit is latched-induring the rising edge of serial clock (C). Then the value of the lock register is shiftedout on serial data output (DQ1), each bit being shifted out at a maximum frequency f C during the falling edge of C.The READ LOCK REGISTER command is terminated by driving S# HIGH at any timeduring data output.Figure 17: READ LOCK REGISTER Command SequenceDQ[0]CDQ1Don’t CareAny READ LOCK REGISTER command issued while an ERASE, PROGRAM, or WRITEcycle is in progress is rejected without any effect on the cycle that is in progress.Values of b1 and b0 after power-up are defined in the table below.Table 14: Lock Register OutPAGE ERASEThe PAGE ERASE command sets to 1 (FFh) all bits inside the chosen page. Before thePAGE ERASE command can be accepted, a WRITE ENABLE command must have beenexecuted previously. After the WRITE ENABLE command has been decoded, the devicesets the write enable latch (WEL) bit.The PAGE ERASE command is entered by driving chip select (S#) LOW, followed by thecommand code, and three address bytes on serial data input (DQ0). Any address insidethe sector is a valid address for the PAGE ERASE command. S# must be driven LOW forthe entire duration of the sequence.S# must be driven HIGH after the eighth bit of the last address byte has been latched in.Otherwise the PAGE ERASE command is not executed. As soon as S# is driven HIGH,the self-timed PAGE ERASE cycle is initiated; the cycle's duration is t PE. While the PAGEERASE cycle is in progress, the status register may be read to check the value of the writein progress (WIP) bit. The WIP bit is 1 during the self-timed PAGE ERASE cycle, and is 0when the cycle is completed. At some unspecified time before the cycle is completed,the WEL bit is reset.A PAGE ERASE command applied to a page that is hardware or software protected is notexecuted.A PAGE ERASE command while an ERASE, PROGRAM, or WRITE cycle is in progress isrejected without having any effects on the cycle that is in progress.If RESET# is driven LOW while a PAGE ERASE cycle is in progress, the PAGE ERASE cycleis interrupted and the programmed data may be corrupted. On RESET going LOW, thedevice enters the reset mode and a time of t RHSL is then required before the device canbe reselected by driving Chip Select (S#) LOW.Figure 21: PAGE ERASE Command SequenceCDQ0Notes: 1.Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don'tcare in the M25PE10.2.Address bits A23-A19 are don't care.3.Address bits A23-A20 are don't care.SUBSECTOR ERASEThe SUBSECTOR ERASE command sets to 1 (FFh) all bits inside the chosen subsector.Before the SUBSECTOR ERASE command can be accepted, a WRITE ENABLE com-mand must have been executed previously. After the WRITE ENABLE command has been decoded, the device sets the write enable latch (WEL) bit.The SUBSECTOR ERASE command is entered by driving chip select (S#) LOW, followed by the command code, and three address bytes on serial data input (DQ0). Any address inside the subsector is a valid address for the SUBSECTOR ERASE command. S# must be driven LOW for the entire duration of the sequence.S# must be driven HIGH after the eighth bit of the last address byte has been latched in.Otherwise the SUBSECTOR ERASE command is not executed. As soon as S# is driven HIGH, the self-timed SUBSECTOR ERASE cycle is initiated; the cycle's duration is t SSE .While the SUBSECTOR ERASE cycle is in progress, the status register may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SUBSECTOR ERASE cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is complete, the WEL bit is reset.A SUBSECTOR ERASE command issued to a sector that is hardware or software protec-ted is not executed.Any SUBSECTOR ERASE command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.If RESET# is driven LOW while a SUBSECTOR ERASE cycle is in progress, the SUBSEC-TOR ERASE cycle is interrupted and data may not be erased correctly. On RESET# going LOW, the device enters the RESET mode and a time of t RHSL is then required before the device can be reselected by driving S# LOW.Figure 22: SUBSECTOR ERASE Command SequenceDQ0CS#2134567892930310Notes: 1.Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don'tcare in the M25PE10.2.Address bits A23-A19 are don't care .3.Address bits A23-A20 are don't care .SECTOR ERASEThe SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has been decoded, the device sets the write enable latch (WEL) bit.The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by the command code, and three address bytes on serial data input (DQ0). Any address in-side the sector is a valid address for the SECTOR ERASE command. S# must be driven LOW for the entire duration of the sequence.S# must be driven HIGH after the eighth bit of the last address byte has been latched in.Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is t SE . While the SECTOR ERASE cycle is in progress, the status register may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is completed, the WEL bit is reset.A SECTOR ERASE command applied to a sector that contains a page that is hardware protected is not executed.Any SECTOR ERASE command while an ERASE, PROGRAM, or WRITE cycle is in pro-gress is rejected without having any effects on the cycle that is in progress.If RESET# is driven LOW while a SECTOR ERASE cycle is in progress, the SECTORERASE cycle is interrupted and the programmed data may be corrupted. On RESET go-ing LOW, the device enters the reset mode and a time of t RHSL is then required before the device can be reselected by driving Chip Select (S#) LOW.Figure 23: SECTOR ERASE Command SequenceCDQ0S#2134567892930310Notes: 1.Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don'tcare in the M25PE10.2.Address bits A23-A19 are don't care .3.Address bits A23-A20 are don't care .。

MEMORY存储芯片MT29F256G08CJAAAWP中文规格书

Programmable Preamble Modes and DQS PostamblesThe device supports programmable WRITE and READ preamble modes, either the nor-mal 1t CK preamble mode or special 2t CK preamble mode. The 2t CK preamble mode places special timing constraints on many operational features as well as being suppor-ted for data rates of DDR4-2400 and faster. The WRITE preamble 1t CK or 2t CK mode can be selected independently from READ preamble 1t CK or 2t CK mode.READ preamble training is also supported; this mode can be used by the DRAM con-troller to train or "read level" the DQS receivers.There are t CCD restrictions under some circumstances:•When 2t CK READ preamble mode is enabled, a t CCD_S or t CCD_L of 5 clocks is not allowed.•When 2t CK WRITE preamble mode is enabled and write CRC is not enabled, a t CCD_S or t CCD_L of 5 clocks is not allowed.•When 2t CK WRITE preamble mode is enabled and write CRC is enabled, a t CCD_S or t CCD_L of 6 clocks is not allowed.WRITE Preamble ModeMR4[12] = 0 selects 1t CK WRITE preamble mode while MR4[12] = 1 selects 2t CK WRITE preamble mode. Examples are shown in the figures below.Figure 111: 1t CK vs. 2t CK WRITE Preamble Mode2t CK Mode1t CK Mode8Gb: x4, x8, x16 DDR4 SDRAM Programmable Preamble Modes and DQS PostamblesLogic Equations for a x8 DeviceDQ0 = MT0DQ5 = MT5DQ1 = MT1DQ6 = MT6DQ2 = MT2DQ7 = MT7DQ3 = MT3DQS_t = MT8DQ4 = MT4DQS_c = MT9Logic Equations for a x16 DeviceDQ0 = MT0DQ10 = INV DQ2DQ1 = MT1DQ11 = INV DQ3DQ2 = MT2DQ12 = INV DQ4DQ3 = MT3DQ13 = INV DQ5DQ4 = MT4DQ14 = INV DQ6DQ5 = MT5DQ15 = INV DQ7DQ6 = MT6LDQS_t = MT8DQ7 = MT7LDQS_c = MT9DQ8 = INV DQ0UDQS_t = INV LDQS_t DQ9 = INV DQ1UDQS_c = INV LDQS_cCT Input Timing RequirementsPrior to the assertion of the TEN pin, all voltage supplies, including V REFCA , must be val-id and stable and RESET_n registered high prior to entering CT mode. Upon the asser-tion of the TEN pin HIGH with RESET_n, CKE, and CS_n held HIGH; CLK_t, CLK_c, and CKE signals become test inputs within t CTECT_Valid. The remaining CT inputs become valid t CT_Enable after TEN goes HIGH when CS_n allows input to begin sampling, pro-vided inputs were valid for at least t CT_Valid. While in CT mode, refresh activities in the memory arrays are not allowed; they are initiated either externally (auto refresh) or in-ternally (self refresh).The TEN pin may be asserted after the DRAM has completed power-on. After the DRAM is initialized and V REFDQ is calibrated, CT mode may no longer be used. The TEN pin may be de-asserted at any time in CT mode. Upon exiting CT mode, the states and the integrity of the original content of the memory array are unknown. A full reset of the memory device is required.After CT mode has been entered, the output signals will be stable within t CT_Valid after the test inputs have been applied as long as TEN is maintained HIGH and CS_n is main-tained LOW.8Gb: x4, x8, x16 DDR4 SDRAM Connectivity Test ModeFigure 95: Power-Down Entry After Read and Read with Auto PrechargeCK_tCK_cCommand DQ BL8DQ BC4DQS_t, DQS_cAddress CKE Transitioning Data Don’t Care Time BreakNote: 1.DI n (or b) = data-in from column n (or b).Figure 96: Power-Down Entry After Write and Write with Auto PrechargeentryTransitioning Data 'RQ¶W &DUH7LPH %UHDN Notes: 1.DI n (or b) = data-in from column n (or b).2.Valid commands at T0 are ACT, DES, or PRE with one bank remaining open after comple-tion of the PRECHARGE command.。

安全智能TF卡说明书

安全智能TF卡产品说明一、背景随着全球信息社会的来临，信息安全问题日益凸显。

信息安全作为“非传统安全”的核心内容，备受各行各业的关注，并成为企业安全体系中的关键要素。

而目前的电子商务，电子政务中通常采用的保护手段是将证书与私钥放入UsbKey中保存发给用户，在交易的过程中用户通过UsbKey 进行身份认证和数据加解密。

由于当前3G牌照的发放，无线环境下数据传输速率得到了保证，结合移动终端智能设备功能日益强大，携带方便不受时间地点的限制等优点，各种PC端应用正快速的向移动终端移置。

与有线环境下一样，无线应用也面临着信息安全的问题，但是手机、PDA等移动终端不具有USB接口，如何安全的使用证书和私钥？基于此信大捷安推出了安全智能TF卡，该卡将证书和私钥以及商用算法保存安全智能TF卡的安全芯片中，私钥不出卡；对外提供多种访问接口。

达到如下效果：通过TF卡读卡器可在PC终端上使用，在网上进行电子交易业务办理时，承担U盾的角色，涵盖目前U盾的所有功能。

在手机、PDA进行可移动的电子交易业务，敏感数据传输时，确保业务处理和数据的通讯安全，提供等同于U盾的安全级别。

二、目标安全TF卡的设计目标包括：u符合商业密码管理条例；u采用标准的Micro SD接口规范；u满足个别需求，根据用户特定要求删除、修改、增加某些功能；u支持线路加密、线路保护功能，防止通讯数据被非法窃取或篡改；u支持一个安全芯片上实现多个不同应用，各应用之间相互独立（多应用、防火墙功能），可建立最多达三级目录；u支持国产密码对称算法SM1；u支持1024位非对称RSA密码算法，可在卡片内进行RSA的产生、加密、解密、签名、验证运算；u支持SSF33算法；u支持多种文件类型，包括二进制和密钥文件等。

二、工作原理安全智能TF卡是用于对PC、PDA、智能终端数据进行安全处理的TF卡，与终端配合工作。

安全智能TF卡符合ISO7816系列标准，同时实现了国产的SM1算法，支持1024位的RSA算法，具有高度的安全性，可实现保密通讯，使用方便。

TF32A09 安全芯片数据手册

vss 121
vss 122
vddh 123
vddh 124
d1/KR1 125
NC 126
d0/KR0 127
porout 128
vss 129
vddh 130
por 131
pllvddcap 132
ss1 vss vss vddh vddh int1 fcle/KC[2] vss vddh fce3/KC8 NC int0 fale/KC[1] NC vss vddh vdd fce2/KC7 NC fre/KC[4] NC fce1/KC6 vss vddh fce0/KC5 NC few/KC[3] NC a25/PORTF4 a0/PORTC0 a24/PORTF3 vss vddh a23/PORTA7 vss ID_d VBUS_d USBCAP_d RREF_d USBVDD_d DM_d DP_d USBVSS_d a22/PORTA6
TF32A09系列芯片支持国家密码管理局指定的对称密码算法、非对称密码算法和杂凑算法，同时支持国际通用密码算法。芯片处理能力强、安全性高、功耗低、接口丰富，具有极高的性能价格比。
应用领域：

加密移动存储（加密U盘、加密移动硬盘和移动存储产品等）

加密key盘

加密PC

加密终端

加密服务器

加密板卡
d7/KR7 104
NC 105
d6/KR6 106
test 107
vss 108
vss 109
vddh 110
vddh 111
vdd 112
d5/KR5 113
eb1/PORTF6 114
d4/KR4 115

加密芯片,国密算法硬件加密TF卡

加密语音
身份鉴别
数字交易
•数字知识产权交易 •影视点播 •票据鉴别
•绑定支付账号 •全程支付安全支持
11
支
付
6、应用领域（3）
12
7、技术支持
提供安全智能TF卡样品提供产品演示包
安全智能TF卡（T12）产品介绍（本手册） SKF接口demo演示程序发证演示
提供产品开发包
提供CSP/P11/SKF应用接口用户开发手册提供应用接口库及通信库提供应用接口开发Demo例程
AHB_RAM2 (256B)
WDT
RSTMU
TIMER DLM
SPI
CPU ISC801 (SMPU and NVIC)
CRC
SFR
APB
AHB
TRNG1x5
CKMU
RNG POWMU UCAA TYPEA SDC SM1/SM4/ DES NFC (ECC)
GPIO SWP
BUF_MUX(DMA)
9
6、应用领域（1）
应用场景
手机支付移动电子政务版权管理移动终端数据保护语音、数据传输保护
10
ห้องสมุดไป่ตู้
6、应用领域（2）
应用领域说明
认证登录
加密短信加密邮件
•输入密码才可以打开安全芯片 •建立安全区域
•使用TF卡标识加密 •不需要传递密钥 •绑定邮箱 •对附件加密 •可做数字签名 •一话一密 •支持3G/WIFI •基于VOIP •物联网安全
算法全面：SM1、
SM2、SM4、3DES 、RSA。支持多种通信接口。
支持在线调试。
M5系列安全芯片
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• SD卡方式
– (安全芯片+NandFlash) – 组合封装TF卡
11
芯片优势
自主设计，国产安全芯片专利设计，加密传输速度快集成国密算法低功耗防攻击成本低
1212
芯片优势
传统安全 SD/TF卡三颗
芯片
三芯片方案简化为两芯片提高生产成品率，降低了成本
提高性能
电压检测、温度检测、频率检测功能防DPA/SPA功耗攻击芯片内置2个硬件真随机数发生器
6
芯片特点
SM1在40MHz ECB模式下，加密18.25MB/S，解密18.25MB/S。 SM2在密钥长度为192bit，40MHz下，加密31次/S，解密49次/S，数字签
名61次/S，签名验证35次/S，密钥对生成75次/S。 SM2在密钥长度为256bit，40MHz下，加密17次/S，解密29次/S，数字签
11 SD协仪测试
通过
万协通通过SD协仪专用VTE仪器测试
9
产品形式 • SD安全芯片
– 仅提供SD安全芯片，不提供Nandflash – 封装形式：QFP(可定制)
• SD卡方式
– (安全芯片+NandFlash) – 组合封装microSD卡与TF卡
10
产品形式 • SD安全芯片
– 仅提供SD安全芯片，不提供Nandflash – 封装形式：QFP(可定制)
名35次/S，签名验证18次/S，密钥对生成38次/S。 RSA(非CRT)在密钥长度为1024bit，40MHz下，数字签名11次/S，密钥对
生成1.3S/次。 RSA（非CRT）在密钥长度为2048bit，40MHz下，数字签名1次/S，密钥
对生成12.14S/次 RSA(CRT)在密钥长度为1024bit，40MHz下，数字签名40次/S RSA（CRT）在密钥长度为2048bit，40MHz下，数字签名5次/S
AHB
SD
SM1/2/4
NFC(ECC)
AHB Decoder
Nand Flash
BUF_MUX RAM(4KB)
EMI
5
芯片特点
高性能高安全的32位CPU内核 548KB norflash，寿命10年，擦写次数10万次 32KB系统SRAM SD控制模块：支持SD2.0，支持CMD Class0-10 Nand Flash控制模块：兼容主流NandFlash 支持多种通信接口：SWP接口/TYPEA接口/EMI接口/GPIO接口支持SM1/SM2/SM4/RSA等安全算法数据流加速处理，提高读写速度与加解密速度低功耗设计多项安全防护措施
安全SD/TF卡两颗芯片
API
SD控制器安全芯片
Flash存储
1313
芯片开发包
硬件
开发工具主板(FPGA开发板)
SD转接线 USB数据线 NandFlash子板 AICE仿真器一个 USB网卡片一个(用于安装IDE license)
软件
IDE集成环境开发板USB Driver USB网卡驱动 AICE驱动 IDE License文件
SD_APP 工程的
功能
普通SD 卡
读写权限控制
安全SD 卡
18
应用开发包 SD_APP工程应用开发指南PDF文档 SD_APP工程应用开发指南PPT介绍 SD_APP工程代码 SDC 测试工具使用说明 SDC 测试工具支持安卓和windows系统
19
典型应用1: SD key应用
1
目录
公司介绍芯片介绍技术参数产品形式芯片测试芯片优势开发包典型应用应用领域和应用场景2Fra bibliotek 企业发展历程
2009
2009年初同方股份信息安全
事业部
2019
TF32A09 取得国家密码局产品品种和型号证书 SSX1019
2019
广州南方信息产业基地有限责任公司注入资本，万协通公司
7
技术参数
工作温度：-25℃ ~85℃ 存储温度：-40℃ ~125℃ 工作电压：2.5V~3.6V(SD卡) 功耗：正常工作模式 10mA
低功耗模式 140uA ESD > 5000V（HBM）
8
芯片测试
编号
1
2 3 4 5 6 7 8 9
10
芯片测试项测试结果
548KB NorFlash工通过艺可靠性报告
成立
2019
完成SD安全芯片的试产，并安排工程批流片
3
芯片结构
支持芯片功能定制
RAM (16KB)
NorFlash (548KB)
RAM (16KB)
emmu
TYPEA SWP
DLM
ILM
CPU(SMPU/VIC)
CRC
Tmr
RNG
GPIO
RAM (0.25KB)
RAM (1KB)
RSA
27
同方计算机信息安全事业部
28
加解密速度快
SM1: 15MB/秒 SM2：签名35次/秒
验证18次/秒
权限分离明确
用户身份识别
邮件加解密
SDKey
口令加
密传输
数据加解密
数字签名及验证
20
典型应用2: NFC手机应用支持NFC手机近距离支付功能：智能卡、移动支付终端
21
典型应用2: NFC手机应用支持NFC手机近距离支付功能：智能卡、支付终端
22
典型应用3: 射频SD卡应用支持射频TF卡（microSD）近距离手机支付功能
23
典型应用4: 并口加密模块应用加解密速度快:最快15MByte/s 方便应用集成:符合异步SRAM接口规范支持SM1、SM4等加解密功能支持RSA、ECC（SM2）加解密功能支持SM3散列算法功能
常温老化寿命测试通过
高温工作寿命测试通过
低温工作寿命测试通过
高温存储测试
通过
ESD测试
通过
LATCH-UP测试通过
极限工作条件测试通过
随机性检测
通过
功耗测试
通过
测试单位
HHNEC
万协通万协通万协通万协通宜硕科技宜硕科技万协通机要局
万协通
备注 Nor flash的可靠性测试，寿命10年，擦写次数10万次 10万次擦写 85度高温环境 -40度低温环境 125度高温环境通过HBM 5000V 通过LATCH-UP测试电压、温度、频率工作范围符合《随机性检测规范》符合设计指标 <100mW；低功耗至 140uA
15
芯片开发包
16
芯片开发包
WIS08SD548安全芯片用户手册 WIS08SD548安全芯片开发工具用户使用手册 WIS08SD548安全芯片编程指南 WIS08SD548安全芯片函数库使用手册 WIS08SD548安全芯片Demo演示程序
17
应用开发包
数据的加解密
接口文件解析
24
典型应用5: Ukey
加解密速度快:最快15MByte/s 双芯片实现Ukey功能支持SM1、SM2、SM4、RSA等算法真随机数发生器
U转SD控制芯片
SD接口安全SD 芯片
25
应用领域
26
应用场景
手机支付移动电子政务版权管理移动终端数据保护语音、数据传输保护射频安全SD卡安全SD_NFC卡 SRAM接口加密模块