三极管参数等

附件A、三极管的Pspice模型参数.Model NPN(PNP、LPNP) [model parameters]

三极管参数等

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附件B、PSpice Goal Function

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附件C Modeling voltage-controlled and temperature-dependent resistors Analog Behavioral Modeling (ABM) can be used to model a nonlinear resistor through use of Ohm抯 law and tables and expressions which describe resistance. Here are some examples.

Voltage-controlled resistor

If a Resistance vs. Voltage curve is available, a look-up table can be used in the ABM expression. This table contains (Voltage, Resistance) pairs picked from points on the curve. The voltage input is nonlinearly mapped from the voltage values in the table to the resistance values. Linear interpolation is used between table values.

Let抯 say that points picked from a Resistance vs. Voltage curve are:

Voltage Resistance

三极管参数等

The ABM expression for this is shown in Figure 1.

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Figure 1 - Voltage controlled resistor using look-up table

Temperature-dependent resistor

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A temperature-dependent resistor (or thermistor) can be modeled with a look-up table, or an expression can be used to describe how the resistance varies with temperature. The denominator in the expression in Figure 2 is used to describe common thermistors. The TEMP variable in the expression is the simulation temperature, in Celsius. This is then converted to Kelvin by adding 273.15. This step is necessary to avoid a divide by zero problem in the denominator, when T=0 C.

NOTE: TEMP can only be used in ABM expressions (E, G devices).

Figure 3 shows the results of a DC sweep of temperature from -40 to 60 C. The y-axis shows the resistance or

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V(I1:-)/1A.

Figure 2 - Temperature controlled resistor Figure 3 - PSpice plot of Resistance vs. Temperature (current=1A) Variable Q RLC network

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In most circuits the value of a resistor is fixed during a simulation. While the value can be made to change for a set of simulations by using a Parametric Sweep to move through a fixed sequence of values, a voltage-controlled resistor can be made to change dynamically during a simulation. This is illustrated by the circuit shown in Figure 5

, which employs a voltage-controlled resistor.

三极管参数等

Figure 4 - Parameter sweep of control voltage

This circuit employs an external reference component that is sensed. The output impedance equals the value of the control voltage times the reference. Here, we will use Rref, a 50 ohm resistor as our reference. As a result, the output impedance is seen by the circuit as a floating resistor equal to the value of V(Control) times the resistance value of Rref. In our circuit, the control voltage value is stepped from 0.5 volt to 2 volts in 0.5 volt steps, therefore, the resistance between nodes 3 and 0 varies from 25 ohms to 100 ohms in 25 ohm-steps.

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三极管参数等

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Figure 5 - Variable Q RLC circuit Figure 6 - Output waveforms of variable Q RLC circuit

A transient analysis of this circuit using a 0.5 ms wide pulse will show how the ringing differs as the Q is varied.

Using Probe, we can observe how the ringing varies as the resistance changes. Figure 6 shows the input pulse and the voltage across the capacitor C1. Comparing the four output waveforms, we can see the most pronounced ringing occurs when the resistor has the lowest value and the Q is greatest. Any signal source can be used to drive the voltage-controlled resistance. If we had used a sinusoidal control source instead of a staircase, the resistance would have varied dynamically during the simulation.

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附件D 变压器PSpice 模型

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等效电路变压器模型

*Transformer Subcircuit Parameters *RA TIO = Turns ratio= Secondary/Primary *RP = Primary DC resistance *RS = Secondary DC resistance *LEAK = Leakage inductance *MAG = Magnetizing inductance

*Generic Transformer *dw: 2-8-99 corrected VISRC polarity and FCTRL configuration

*Connections: * Pri+ * | Pri- * | | Sec+ * | | | Sec- * | | | | .SUBCKT TRANS 1 2 3 4 PARAMS: RATIO="1" RP="0".1 RS="0".1 LEAK="1u" MAG="1k" VISRC 4 9 0V

FCTRL 5 2 VISRC {RA TIO} EVCVS 8 9 5 2 {RATIO} RPRI 1 7 {RP} RSEC 8 3 {RS} LLEAK 7 5 {LEAK} LMAGNET 2 5 {MAG} .ENDS TRANS

等价于用K_Line 把两个电感关联起来.

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CT中心抽头输出变压器模型

*TRANSCT:Transformer Subcircuit Parameters *RATIO = Turns ratio (= Secondary/Primary)

*RP = Primary DC resistance *RS = Secondary DC resistance

*LEAK = Leakage inductance *MAG = Magnetizing inductance

*5:1 Centre-Tapped Transformer

*Connections:* Pri+ * | Pri- * | | Sec+ * | | | SecCT * | | | | Sec- * | | | | | .SUBCKT 5TO1CT 1 2 3 4 5 PARAMS: RATIO="0".2 RP="0".1 RS="0".1 LEAK="1u" MAG="1u"

RPRI 1 7 {RP}

LLEAK 7 10 {LEAK}

LMAGNET 6 10 {MAG}

VSEC1 9 4 DC 0V

FSEC1 6 2 VSEC1 {(RATIO/2)}

ESEC1 8 9 10 2 {(RATIO/2)}

RSEC1 8 3 {(RS/2)}

VSEC2 12 5 DC 0V

FSEC2 6 2 VSEC2 {(RATIO/2)}

ESEC2 11 12 10 2 {(RATIO/2)}

RSEC2 11 4 {(RS/2)}

.ENDS 5TO1CT

Transformer变压器相关参数:

Primary turns 一次线匝Secondary turns 二次线匝

Primary (Winding)resistance 初级线圈电阻Primary leakage inductance 初级线圈漏电感

Primary coil inductance 初级线圈电感Coefficient of Coupling 耦合系数

Magnetizing inductance 磁化电感

Primary-to-Secondary Turns Ratio 初次级匝数比

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附件E 创建元器件的Model Maker中已有模型如下:

AC Motor 交流发动机

Bjt 双极性结型晶体管

Boost Converter 升压转换器

Buck Boost Converter 降-升压型变换器

Buck Converter 降压转换器

Cuk Converter Cuk转换器

Diode 二极管

Lossyline 高损耗线

Microstrip line 微波带状线、微带线

Open End Microstrip line 开口的微带线、开放式的微带线、末端开口的微带线

MOSFET(4pins, DGS Sub) (Metal-Oxide-Semiconductor Field-Effect Tansistor)MOS场效晶体管,绝缘、金属氧化物半导体晶体管Operational Amplifier 运算放大器

RF Spiral Inductor 射频螺旋电感

Interdigital Capacitor 交指电容

SCR (Semiconductor Control Rectifier) 半导体控制整流器

Stripline Bend

Strip line 带状传输线、电介质条状线

Linear Transformer with Neutral Terminal 中性线段线性变压器、中性点接线端线性变压器

Two Winding Linear Transformer 双绕组线性变压器、双线圈线性变压器

Ideal Transformer (Multiple Winding) 理想变压器(多线圈)

Linear Transfomer(Multiple Winding) 线性变压器(多线圈)

Nonlinear Transformer(Multiple Winding) 非线性变压器(多线圈)

Waveguide 波导管、波导器

Zener (diodes) 齐纳(二极管)

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