半导体工艺技术

半导体工艺技术Semiconductor Process Technology

(Lecture Notes)

复旦大学

信息科学技术学院微电子学系

微电子研究院

李炳宗

2004.3

Semiconductor Process Technology

Contents

Chapter 1. Progress and Main Factors of Semiconductor Technology z Invention of Transistor and Integrated Circuits

z From SSI to VLSI/ULSI/SLSI

z Device Miniaturization---The Key of Progress

z Micro-fabrication Technology---The Way to Progress

z Si and its based Thin Films---The Material Base for Progress z Moore’s Law

z Semiconductor Technology Roadmap

z Leading Edge CMOS Technology

z Microelectronics Revolution and Information Age

z From Micro- to Nano-

Chapter 2. Basic VLSI/ULSI Fabrication Process Technology

z Evolution of IC Process Technology

z Main LSI/VLSI processes developed in history

z CMOS core based ULSI technology---basis of present Microelectronics

z Main elemental devices and process flow of IC fabrication

z Major chip fabrication material and technology

z Ultra clean technologies-of vital importance for VLSI/ULSI manufacturing

Chapter 3 CMOS Process Technology

z Evolution of Si MOSFET

z Si substrate selection for MOS devices

z Basic structure and advantage of CMOS

z Formation of two types MOSFETs on the same Si substrate

z CMOS Device isolation

z A typical CMOS fabrication process flow

z Latch-up effect in CMOS devices

z Sub-micron CMOS device engineering optimization

---Well engineering

---Channel engineering

---Source/drain doping engineering

---Salicide (Self-aligned silicide) process engineering

Chapter 4 Basic Bipolar and BiCMOS Process Technology

z Requirements and structure of bipolar devices for high performance IC

z Main fabrication process of oxide isolation bipolar IC

z Poly-Si self-aligned (PSA) process for bipolar VLSI technology

z SBD clamps for better speed performance of bipolar logic IC

z Hetro-junction bipolar transistor (HBJT or HBT) technology

z BiCMOS technology

Chapter 5. Device Scaling-down Principles and Limitations

z MOS device downscaling principles

z Verification of scaling relationship of device parameters

z Practical scaling for MOS devices

z Bipolar device scaling

z Two approaches of deep submicron CMOS device scaling

and

Low-power

---High-performance

z Semiconductor technology roadmap based on scaling-down principle

z Device scaling limitation

z Exploration of the nanometer CMOS technology

Chapter 6 SiO2, Si/SiO2 Interface and High-k/Low-k Dielectrics

z SiO2---one of the key materials for semiconductor technology

z Structure of SiO2 films

z Growth mechanisms of thermal oxide

z Deal-Grove model of oxidation kinetics

z Oxidation rate dependence on T, P, Orientation

z Impurity effects on oxidation rate

z Si/ SiO2 Interface and Oxide traps

z Other properties of thermal SiO2

z High-k and low-k dielectrics

Chapter 7 Lithography

z Fine line lithography – Key for micro-fabrication

z Progress of patterning technology

z Optical alignment and exposure system

z Photoresist

z Optical lithography for sub-micron fabrication

z Light sources for optical lithography

z Phase shifting mask technology

z Novel lithography technology beyond Optical

Chapter 8 Ion Implantation

z Basic Principle and Method

z Interaction Between Incident Ions and Substrate Atoms

z Stopping Power and Projected Range

z Ion Channeling Effect

z Implant Damage

z Thermal Annealing

Chapter 9 Diffusion

z Diffusion Mechanism

1.Interstitial Diffusion

2.Substitutional Diffusion

3.Interstitialcy diffusion

4.Simplified model of diffusivity

z Diffusion Equation and Distribution of Impurities

1.Fick’s Law & diffusion equation

2.Diffusion coefficient

3.Predeposition (constant surface concentration diffusion)

4.Drive-in Diffusion (constant total dopant diffusion)

z Diffusion impurities and sources

z Field aided extrinsic diffusion

z Concentration dependence and atomistic model of diffusion z Diffusion coefficient and depth profile of B, As, P

z Oxidation effect on diffusion

z Diffusion in Poly-Si

Chapter 10 Plasma and Sputtering PVD

z Low energy plasma for semiconductor processing:

z Plasma generation and potential

1.DC glow discharge modes

2.Dependence of discharge on gas pressure and separation of

electrodes

3.Plasma potential

4.Sheath formation at floating substrate and electrodes

5.Maintenance of the discharge and plasma

6.Collision processes during glow discharge

z Principle fundamentals of sputtering process

1.The mechanism of sputtering

2.The sputtering yield

3.Energy of the sputtered particles

z Magnetron Sputtering

1.Variety of sputtering techniques

2.Magnetically enhanced sputtering

3.Magnetron configuration

4. Collimated Sputtering Technique

z RF Plasma and Sputtering

1. RF sputtering for dielectric films

2. Self-bias generation at target during RF discharge

3. Distribution of voltage in RF system

4. Matching network

5. A highly directional sputtering technology----the ionized

metal plasma (IMP) technology

Chapter 11 Chemical Vapor Deposition

z CVD – Formation of a solid film on a substrate by the reaction of vapor phase chemical reactants

z CVD process kinetics

z Plasma Enhanced CVD

z Photo-Enhanced CVD

z CVD of SiO2 and Si3N4

Chapter 12Dry Etching by Plasma Processing

z Dry etching－one of the key technologies for VlSI/ULSI

z Plasma etching mechanisms

z Various plasma-etching reactors

z Etching Anisotropy

z Dry etching for different materials

z Contamination During Plasma Etching

z Radiation Damage

z Endpoint Detection

Chapter 13 Contact and Interconnection

z Contact and Interconnection–Increasing importance for VLSI/ULSI Technology

z Advanced Contact & Interconnection Technology – Integration of various thin film materials and process techniques

z Contact Resistance

z Al/Si Ohmic Contact and Interconnect

z Cu Interconnection by Damascene Technology

z Silicide, Polycide and Salicide

Reference Books:

Stephen A. Campbell 原著，曾莹等译

The Science and Engineering of Microelectronic Fabrication

微电子制造科学原理与工程技术

S. Wolf and R. Tauber Silicon Processing for VLSI Era

V.1 Process Technology

V.2 Process Integration

V.3 The Submicron MOSFET

V.4 Deep-submicron Process Technology J. D. Plummer, M. E. Deal, P. B. Griffin

Technology

VLSI

Silicon

C.Y. Chang and S.M. Sze ULSI Technology

S.M. Sze VLSI Technology

S.K. Ghandi VLSI Fabrication Principles

-----Silicon and Gallium Arsenide

W.R. Runyan and J.R. Brews

Semiconductor Integrated Circuit Processing Technology E.H. Nicollian and J. R. Brews

MOS Physics and Technology

Y. Taur and T. H. Ning

Fundamentals of Modern VLSI Devices

王阳元等集成电路工艺基础

庄同曾等集成电路制造技术

Major Periodical Publications on Semiconductor Process Technology

Solid State Technology

Semiconductor International

J. of Applied Physics

Applied Physics Letter

J. of Vacuum Science & Technology (A, B)

IEEE Electron Device Letters

IEEE Transactions on Electron Devices

IEEE Transactions on Semiconductor Manufacturing

J. of Electronic Materials

J. of Electrochemical Society

J. of Material Research

Thin Solid Films

Applied Surface Science

半导体学报, 半导体技术等

Proceedings/Publications of Conferences on

Semiconductor Process Technology

International Electron Device Meeting (IEDM)

VLSI Technology Symposium (VLSI Sym.)

ECS (Electrochemical Society) Meeting

MRS (Material Research Society) Meeting, etc.

Websites on Semiconductor Process Technology https://www.360docs.net/doc/664999036.html,; https://www.360docs.net/doc/664999036.html,; https://www.360docs.net/doc/664999036.html,; https://www.360docs.net/doc/664999036.html,; https://www.360docs.net/doc/664999036.html,;

https://www.360docs.net/doc/664999036.html,; etc