Integrated_Circuits(集成电路)电子信息类专业英语、计算机类专业英语文章

Integrated_Circuits(集成电路)电子信息类专业英语、计算机类专业英语文章
Integrated_Circuits(集成电路)电子信息类专业英语、计算机类专业英语文章

Integrated Circuits(集成电路)

The Integrated Circuit

Digital logic and electronic circuits derive their functionality from electronic switches called transistor. Roughly speaking, the transistor can be likened to an electronically controlled valve whereby energy applied to one connection of the valve enables energy to flow between two other connections.By combining multiple transistors, digital logic building blocks such as AND gates and flip-flops are formed. Transistors, in turn, are made from semiconductors. Consult a periodic table of elements in a college chemistry textbook, and you will locate semiconductors as a group of elements separating the metals and nonmetals.They are called semiconductors because of their ability to behave as both metals and nonmetals. A semiconductor can be made to conduct electricity like a metal or to insulate as a nonmetal does. These differing electrical properties can be accurately controlled by mixing the semiconductor with small amounts of other elements. This mixing is called doping. A semiconductor can be doped to contain more electrons (N-type) or fewer electrons (P-type). Examples of commonly used semiconductors are silicon and germanium. Phosphorous and boron are two elements that are used to dope N-type and P-type silicon, respectively.

A transistor is constructed by creating a sandwich of differently doped semiconductor layers. The two most common types of transistors, the bipolar-junction transistor (BJT) and the field-effect transistor (FET) are schematically illustrated.This figure shows both the silicon structures of these elements and their graphical symbolic representation as would be seen in a circuit diagram. The BJT shown is an NPN transistor, because it is composed of a sandwich of N-P-N doped silicon. When a small current is injected into the base terminal, a larger current is enabled to flow from the collector to the emitter.The FET shown is an N-channel FET, which is composed of two N-type regions separated by a P-type substrate. When a voltage is applied to the insulated gate terminal, a current is enabled to flow from the drain to the source. It is called N-channel, because the gate voltage induces an N-channel within the substrate, enabling current to flow between the N-regions.

Another basic semiconductor structure is a diode, which is formed simply by a junction of N-type and P-type silicon. Diodes act like one-way valves by conducting current only from P to N. Special diodes can be created that emit light when a voltage is applied. Appropriately enough, these components are called light emitting diodes, or LEDs. These small lights are manufactured by the millions and are found in diverse applications from telephones to traffic lights.

The resulting small chip of semiconductor material on which a transistor or diode is fabricated can be encased in a small plastic package for protection against damage and contamination from the out-side world.Small wires are connected within this package between the semiconductor sandwich and pins that protrude from the package to make electrical contact with other parts of the intended circuit. Once you have several discrete transistors, digital logic can be built by directly wiring these components together. The circuit will function, but any substantial amount of digital logic will be very bulky, because several transistors are required to implement each of the various types of logic gates.

At the time of the invention of the transistor in 1947 by John Bardeen, Walter Brattain, and William Shockley, the only way to assemble multiple transistors into a single circuit was to buy

separate discrete transistors and wire them together. In 1959, Jack Kilby and Robert Noyce independently invented a means of fabricating multiple transistors on a single slab of semiconductor material. Their invention would come to be known as the integrated circuit, or IC, which is the foundation of our modern computerized world. An IC is so called because it integrates multiple transistors and diodes onto the same small semiconductor chip. Instead of having to solder individual wires between discrete components, an IC contains many small components that are already wired together in the desired topology to form a circuit.

A typical IC, without its plastic or ceramic package, is a square or rectangular silicon die measuring from 2 to 15 mm on an edge. Depending on the level of technology used to manufacture the IC, there may be anywhere from a dozen to tens of millions of individual transistors on this small chip. This amazing density of electronic components indicates that the transistors and the wires that connect them are extremely small in size. Dimensions on an IC are measured in units of micrometers, with one micrometer (1mm) being one millionth of a meter. To serve as a reference point, a human hair is roughly 100mm in diameter. Some modern ICs contain components and wires that are measured in increments as small as 0.1mm!

When an IC is designed and fabricated, it generally follows one of two main transistor technologies: bipolar or metal-oxide semiconductor (MOS). Bipolar processes create BJTs, whereas MOS processes create FETs. Bipolar logic was more common before the 1980s, but MOS technologies have since accounted the great majority of digital logic ICs. N-channel FETs are fabricated in an NMOS process, and P-channel FETs are fabricated in a PMOS process. In the 1980s, complementary-MOS, or CMOS, became the dominant process technology and remains so to this day. CMOS ICs incorporate both NMOS and PMOS transistors.

Application Specific Integrated Circuit

An application-specific integrated circuit (ASIC) is an integrated circuit (IC) customized for a particular use, rather than intended for general-purpose use. For example, a chip designed solely to run a cell phone is an ASIC. In contrast, the 7400 series and 4000 series integrated circuits are logic building blocks that can be wired together for use in many different applications.

As feature sizes have shrunk and design tools improved over the years, the maximum complexity (and hence functionality) possible in an ASIC has grown from 5,000 gates to over 100 million.Modern ASICs often include entire 32-bit processors, memory blocks including ROM, RAM, EEPROM, Flash and other large building blocks. Such an ASIC is often termed a SoC (System-on-Chip). Designers of digital ASICs use a hardware description language (HDL), such as Verilog or VHDL, to describe the functionality of ASICs.

Field-programmable gate arrays (FPGA) are the modern day equivalent of 7400 series logic and a breadboard, containing programmable logic blocks and programmable interconnects that allow the same FPGA to be used in many different applications. For smaller designs and/or lower production volumes, FPGAs may be more cost effective than an ASIC design. The non-recurring engineering cost (the cost to setup the factory to produce a particular ASIC) can run into hundreds of thousands of dollars.

The general term application specific integrated circuit includes FPGAs, but most designers use ASIC only for non-field programmable devices and make a distinction between ASIC and FPGAs.

中文翻译:

集成电路

集成电路

数字逻辑和电子电路由称为晶体管的电子开关得到它们的(各种)功能。粗略地说,晶体管好似一种电子控制阀,由此加在阀一端的能量可以使能量在另外两个连接端之间流动。通过多个晶体管的组合就可以构成数字逻辑模块,如与门和触发电路等。而晶体管是由半导体构成的。查阅大学化学书中的元素周期表,你会查到半导体是介于金属与非金属之间的一类元素。它们之所以被叫做半导体是由于它们表现出来的性质类似于金属和非金属。可使半导体像金属那样导电,或者像非金属那样绝缘。通过半导体和少量其它元素的混合可以精确地控制这些不同的电特性,这种混合技术称之为“半导体掺杂”。半导体通过掺杂可以包含更多的电子(N型)或更少的电子(P型)。常用的半导体是硅和锗,N型硅半导体掺入磷元素,而P型硅半导体掺入硼元素。

不同掺杂的半导体层形成的三明治状夹层结构可以构成一个晶体管,最常见的两类晶体管是双极型晶体管(BJT)和场效应晶体管(FET),这些晶体管的硅结构,以及它们用于电路图中的符号。BJT是NPN晶体管,因为由N—P—N掺杂硅三层构成。当小电流注入基极时,可使较大的电流从集电极流向发射极。图示的FET是N沟道的场效应型晶体管,它由两块被P型基底分离的N型组成。将电压加在绝缘的栅极上时,可使电流由漏极流向源极。它被叫做N沟道是因为栅极电压诱导基底上的N通道,使电流能在两个N区域之间流动。

另一个基本的半导体结构是二极管,由N型和P型硅连接而成的结组成。二极管的作用就像一个单向阀门,由于电流只能从P流向N。可以构建一些特殊二极管,在加电压时可以发光,这些器件非常合适地被叫做发光二极管或LED。这种小灯泡数以百万计地被制造出来,有各种各样的应用,从电话机到交通灯。

半导体材料上制作晶体管或二极管所形成的小芯片用塑料封装以防损伤和被外界污染。在这封装里一些短线连接半导体夹层和从封装内伸出的插脚以便与(使用该晶体管的)电路其余部分连接。一旦你有了一些分立的晶体管,直接用电线将这些器件连线在一起就可以构建数字逻辑(电路)。电路会工作,但任何实质性的数字逻辑(电路)都将十分庞大,因为要在各种逻辑门中每实现一种都需要多个晶体管。

1947年,John Bardeen、Walter Brattain和and William Shockley发明晶体管的时候。将多个晶体管组装在一个电路上的唯一方法就是购买多个分离的晶体管,将它们连在一起。1959年,Jack Kilby 和 Robert Noyce各自独立地发明了一种将多个晶体管做在同一片半导体材料上的方法。这个发明就是集成电路,或IC,是我们现代电脑化世界的基础。集成电路之所以被这样命名,是因为它将多个晶体管和二极管集成到同一块小的半导体芯片上。IC包含按照形成电路所要求的拓扑结构连在一起的许多小元件,而无需再将分立元件

的导线焊接起来。

去除了塑料或陶瓷封装后,一个典型的集成电路就是每一边2mm至15mm的方形或矩形硅片。根据制造集成电路的技术水平的不同,在这种小片上可能有几十个到几百万个晶体管,电子器件这种令人惊异的密度表明那些晶体管以及连接它们线是极其微小的。集成电路的尺寸是以微米为单位测量的,1微米是1米的百万分之一。作为参照,一根人的头发其直径大约为100微米。一些现代集成电路包含的元件和连线,是以小到0.1微米的增量来测量的。在集成电路的设计和制造过程中,常用两种主要晶体管技术是:双极和金属氧化物半导体(MOS)。双极工艺生产出来的是BJT(双极型晶体管),而MOS工艺生产出来的是FET(场效应晶体管)。在20世纪80年代以前更常用的集成电路是双极逻辑,但是此后MOS技术在数字逻辑集成电路中占据了大多数。N沟道FET是采用NMOS工艺生产的,而P沟道FET是采用PMOS工艺生产的。到了20世纪80年代,互补MOS即CMOS成为占主导地位的加工技术,并且延续至今。CMOS集成电路包含了NMOS和PMOS两种晶体管。

专用集成电路(ASIC)

专用集成电路(ASIC)是为了特殊应用而定制的集成电路,而不是通用的。比如,一片仅被设计用于运行蜂窝式电话的芯片是专用集成电路(ASIC)。相比之下,7400与4000系列集成电路是可以用导线连接的逻辑构建模块,适用于各种不同的应用。

随着逐年来特征尺寸的缩小和设计工具的改进,ASIC中的最大复杂度从5000个门电路增长到了1亿个门电路,因而功能也有极大的提高。现代ASIC常包含32位处理器,包括ROM、RAM、EEPROM、Flash等存储器,以及其它大规模组件。这样的ASIC经常被称为SoC (片上系统)。数字ASIC的设计者们使用硬件描述语言(HDL),比如Verilog或VHDL语言来描述ASIC的功能。

现场可编程门阵列(FPGA)是7400系列和面包板的现代版,它包括可编程逻辑块和可编程的模块之间的相互连接,使得相同的FPGA能够用于许多不同的场合。对于较小规模的设计或(与)小批量生产,FPGA可能比ASIC设计有更高的成本效率。不能循坏的工程费用(建立工厂生产特定ASIC的成本)可能会达到数十万美元。

专用集成电路这一通用名词也包括FPGA,但是大多数设计者仅将ASIC用于非现场可编程的器件,将ASIC和FPGA两者区别开来。

班级:电信1001班

姓名:李梦妮

时间:2012/5/10

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集成电路英文代码及中文对照(一) 我的文摘2009-11-21 11:32:53 阅读111 评论0 字号:大中小订阅 性能说明 产品名称 型号规格 LM LM24J 四运放(军用级) LM148J 通用四运放 LM1875T 无线电控制/接收器 LM224J 四运放(工业级) LM258N 分离式双电源双运放 LM2901N 四电压比较器 LM2904N 四运放 LM301AN 通用运算放大器 LM308N 单比较器 LM311P 单比较器 LM317L 可调三端稳压器/100mA LM317T 可调三端稳压器/1.5A LM317K 可调三端稳压器/3A LM318 高速宽带运放 LM324K 通用四运放 LM331N V-F/F-V转换器 LM336-2.5V 基准电压电路 LM336 5V 基准电压电路 LM337T 基准电压电路1A LM338K 可调三端稳压器5A LM339N 四比较器 LM348N 四741运放 LM358N 低功耗双运放

LM361N 高速差动比较器 LM386N 声频功率放大器 LM3914N 十段点线显示驱动 LM393N 低功耗低失调双比较器 LM399H 精密基准源(6.9) LM723CN 可调正式负稳压器 LM733CN 视频放大器 LM741J 单运放 LM741CN 双运放 NE NE521 高速双差分比较器 NE5532 双运放 NE5534 双运放 NE555N 单运放 NE555J 时基电路军品极 NE556 双级型双时基电路 NE564 锁相环 NE565 锁相环 NE567 音调译码器 NE592 视频放大器 OP OP07 低噪声运放 OP27 超低噪声精密运放 OP37 超低噪声精密运放 光电耦合 4N25 晶体管输出 4N25MC 晶体管输出 4N26 晶体管输出 4N27 晶体管输出 4N28 晶体管输出 4N29 达林顿输出

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LCD专业术语中英文版

LCD专业术语中英文版 Backlight:背光。 CCFL(CCFT) (Cold Cathode Fluorescent Light/Tube):冷阴极荧光灯。 Composite vide复合视频。 Component vide分量视频。 COB(Chip On Board):IC裸片通过邦定固定于印刷线路板上。 COF(Chip On Film):将IC封装于柔性线路板上。 COG(Chip On Glass):将IC封装于玻璃上。 CRT(Cathode Radial Tube):阴极射线管。 DPI(Dot Per Inch):点每英寸。

Duty:占空比,高出点亮的阀值电压的部分在一个周期中所占的比率。 DVI(Digital Visual Interface):(VGA)数字接口。 ECB(Electrically Controlled Birefringence):电控双折射。 EL(Electro luminescence):电致发光。EL层由高分子量薄片构成 FSTN(Formulated STN):薄膜补偿型STN,用于黑白显示。 HTN(High Twisted Nematic):高扭曲向列的显示类型。 IC(Integrate Circuit):集成电路。 Inverter:逆变器。 ITO(Indium-Tin Oxide):氧化铟锡。

LCD(Liquid Crystal Display):液晶显示器。 LCM(Liquid Crystal Module): 液晶模块。 LED(Light Emitting Diode):发光二极管。 LVDS(Low Voltage Differential Signaling):低压差分信号。 NTSC(National Television Systems Committee):NTSC制式,全国电视系统委员会制式 OSD(On Screen Display):在屏上显示。 PAL(Phase Alternating Line)AL制式(逐行倒相制式)。 PCB(Print Circuit Board):印刷线路板。 PDP(Plasma Display Panel):等离子体显示。 SECAM(SE quential Couleur Avec Memoire):SECAM

电子信息类专业英语翻译

1.This electron beam sweeps across each line at a uniform rate,then flies back to scan another line directly below the previous one and so on,until the horizontal lines into which it is desired to break or split the picture have been scanned in the desired sequence. 电子束以均匀的速率扫描每一行,然后飞速返回去扫描下一行,直到把被扫描的图像按所希望的顺序分割成行。 2.The technical possibilities could well exist,therefore,of nation-wide integrated transmission network of high capacity,controlled by computers,interconnected globally by satellite and submarine cable,providing speedy and reliable communications throughout the word 因此,在技术上完全可能实现全国性的集成发送网络。这种网络容量大,由计算机控制,并能通过卫星和海底电缆实现全球互联,提供世界范围的高速、可靠的通信。 3.Transit time is the primary factor which limits the ability of a transistor to operate at high frequency. 渡越时间是限制晶体管高频工作能力的主要因素 4.The intensity of sound is inversely proportional to the square of the distance measured from the source of the sound. 声强与到声源的距离的平方成反比。 5.The attenuation of the filter is nearly constant to within 0.5 dB over the entire frequency band. 该滤波器的衰减近于恒定, 整个频带内的变化在0.5 dB以内。 6.At present, the state of most semiconductor device technology is such that the device design and process technology must be supplemented by screening and inspection procedures, if ultimate device reliability is to be obtained and controlled. 目前, 大多数半导体器件的技术尚未十分完善, 以至若要获得并控制器件最终的可靠性, 就必须辅以筛选和检验, 以弥补设计和工艺技术之不足 7.Bandwidth of transistor amplifiers vary from about 250 MHz in the L band to 1000 MHz in the X band. 晶体管放大器的带宽在L波段约为250 MHz, 在X波段为1000 MHz。 8.The output of the differential amplifier is fed to the circuit’s output stage via an offset-compensation network, which causes the op-amp’s output to center at zero volts. The output stage takes the form of a complementary emitter follower, and provides a low-impedance output. 差动放大级的输出通过一个失调补偿网络与输出级相连, 目的是使运放的输出以0 V为中心。输出级采用互补的射极跟随器的形式以使输出阻抗很低 9.Because of the very high open-loop voltage gain of the op-amp, the output is driven into positive saturation (close to +V) when the sample voltage goes slightly above the reference voltage, and driven into negative saturation (close to-V) when the sample voltage goes slightly below the reference voltage. 由于运放的开环电压增益很高, 当取样电压略高于参考电压时, 输出趋向于正向饱和状态(接近+V)。当取样电压低于参考电压时, 输出趋向于负向饱和状态(接近-V)。 10.If the signal source were direct connected instead of capacitor coupled, there would be a low resistance path from the base to the negative supply line, and this would affect the circuit bias conditions. 如果信号源和电路不是用电容耦合而是直接相连,从基极到负电源线就会一个低阻通路,并且这将影响到电路偏置状态 11.The differential amplifier has a high-impedance (constant-current)“tail”to give it a high input impedance and a high degree of common-mode signal rejection. It also has a high-impedance collector (or drain) load, to give it a large amount of signal-voltage gain (typically about 100 dB). 差动放大极有一个高阻抗的“尾巴”(恒流源)以提供高输入阻抗和对共模信号的深度抑制,同时,它还具有一个高阻抗和集电极或漏极负载以提供高的信号电压增益(典型的数据是100dB). 12.On the other hand, a DC negative-logic system, as in Figure 3.6(b), is one which designates the more negative voltage state of the bit as the 1 level and the more positive as the 0 level. 另一方面, 如图3.6(b)所示, 把比特的较低的电压状态记为1电平, 较高的电压状态记为0电平, 这样的系统称为直流负逻辑系统。 13.For example, to represent the 10 numerals (0, 1, 2, …, 9) and the 26 letters of the English alphabet would require 36 different combinations of 1’s and 0’s. Since 25<36<26, then a minimum of 6 bits per bite are required in order to accommodate all the alphanumeric characters. 例如,要表示0~9十个数字和英文字母表中的26个字母,就需要0和1的36种不同的组合。因为25<36>26,

电气专业英语

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电子信息工程专业英语词汇(精华整理版)

transistor n 晶体管 diode n 二极管semiconductor n 半导体 resistor n 电阻器 capacitor n 电容器 alternating adj 交互的 amplifier n 扩音器,放大器integrated circuit 集成电路 linear time invariant systems 线性时不变系统voltage n 电压,伏特数 tolerance n 公差;宽容;容忍condenser n 电容器;冷凝器dielectric n 绝缘体;电解质electromagnetic adj 电磁的 adj 非传导性的 deflection n偏斜;偏转;偏差 linear device 线性器件 the insulation resistance 绝缘电阻 anode n 阳极,正极 cathode n 阴极 breakdown n 故障;崩溃 terminal n 终点站;终端,接线端emitter n 发射器 collect v 收集,集聚,集中insulator n 绝缘体,绝热器oscilloscope n 示波镜;示波器 gain n 增益,放大倍数 forward biased 正向偏置 reverse biased 反向偏置 P-N junction PN结 MOS(metal-oxide semiconductor)金属氧化物半导体 enhancement and exhausted 增强型和耗尽型 integrated circuits 集成电路 analog n 模拟 digital adj 数字的,数位的horizontal adj, 水平的,地平线的vertical adj 垂直的,顶点的amplitude n 振幅,广阔,丰富attenuation n衰减;变薄;稀薄化multimeter n 万用表 frequency n 频率,周率 the cathode-ray tube 阴极射线管 dual-trace oscilloscope 双踪示波器 signal generating device 信号发生器 peak-to-peak output voltage 输出电压峰峰值sine wave 正弦波 triangle wave 三角波 square wave 方波 amplifier 放大器,扩音器 oscillator n 振荡器 feedback n 反馈,回应 phase n 相,阶段,状态 filter n 滤波器,过滤器 rectifier n整流器;纠正者 band-stop filter 带阻滤波器 band-pass filter 带通滤波器 decimal adj 十进制的,小数的hexadecimal adj/n十六进制的 binary adj 二进制的;二元的octal adj 八进制的 domain n 域;领域 code n代码,密码,编码v编码 the Fourier transform 傅里叶变换 Fast Fourier Transform 快速傅里叶变换microcontroller n 微处理器;微控制器assembly language instrucions n 汇编语言指令 chip n 芯片,碎片 modular adj 模块化的;模数的 sensor n 传感器 plug vt堵,塞,插上n塞子,插头,插销coaxial adj 同轴的,共轴的 fiber n 光纤relay contact 继电接触器 single instruction programmer 单指令编程器 dedicated manufactures programming unit 专 供制造厂用的编程单元 beam n (光线的)束,柱,梁 polarize v(使)偏振,(使)极化 Cathode Ray Tube(CRT)阴极射线管 neuron n神经元;神经细胞 fuzzy adj 模糊的 Artificial Intelligence Shell 人工智能外壳程序 Expert Systems 专家系统 Artificial Intelligence 人工智能 Perceptive Systems 感知系统 neural network 神经网络 fuzzy logic 模糊逻辑 intelligent agent 智能代理 electromagnetic adj 电磁的 coaxial adj 同轴的,共轴的 microwave n 微波 charge v充电,使充电 insulator n 绝缘体,绝缘物 nonconductive adj非导体的,绝缘的 antenna n天线;触角 modeling n建模,造型 simulation n 仿真;模拟 prototype n 原型 array n 排队,编队 vector n 向量,矢量 wavelet n 微波,小浪 sine 正弦cosine 余弦 inverse adj倒转的,反转的n反面;相反v 倒转 high-performance 高精确性,高性能 two-dimensional 二维的;缺乏深度的 three-dimensional 三维的;立体的;真实的 object-oriented programming面向对象的程序 设计 spectral adj 光谱的 attenuation n衰减;变薄;稀释 distortion n 失真,扭曲,变形 wavelength n 波长 refractive adj 折射的 ATM 异步传输模式Asynchronous Transfer Mode ADSL非对称用户数字线Asymmetric digital subscriber line VDSL甚高速数字用户线very high data rate digital subscriber line HDSL高速数据用户线high rate digital subscriber line FDMA频分多址(Frequency Division Multiple Access) TDMA时分多址(Time Division Multiple Access) CDMA同步码分多址方式(Code Division Multiple Access) WCDMA宽带码分多址移动通信系统(Wideband Code Division Multiple Access) TD-SCDMA(Time Division Synchronous Code Division Multiple Access)时分同步码分多址 SDLC(synchronous data link control)同步数据 链路控制 HDLC(high-level data link control)高级数据链路 控制 IP/TCP(internet protocol /transfer Control Protocol)网络传输控制协议 ITU (International Telecommunication Union) 国际电信联盟 ISO国际标准化组织(International Standardization Organization); OSI开放式系统互联参考模型(Open System Interconnect) GSM全球移动通信系统(Global System for Mobile Communications) GPRS通用分组无线业务(General Packet Radio Service) FDD(frequency division duplex)频分双工 TDD(time division duplex)时分双工 VPI虚路径标识符(Virtual Path Identifier); ISDN(Integrated Services Digital Network)综 合业务数字网 IDN综合数字网(integrated digital network) HDTV (high definition television)高清晰度电视 DCT(Discrete Cosine Transform)离散余弦变换 VCI(virtual circuit address)虚通路标识 MAN城域网Metropolitan area networks LAN局域网local area network WAN广域网wide area network 同步时分复用STDM Synchronous Time Division Multiplexing 统计时分复用STDM Statistical Time Division Multiplexing 单工传输simplex transmission 半双工传输half-duplex transmission 全双工传输full-duplex transmission 交换矩阵Switching Matrix 电路交换circuit switching 分组交换packet switching 报文交换message switching 奇偶校验parity checking 循环冗余校验CRC Cyclic Redundancy Check 虚过滤Virtual filter 数字滤波digital filtering 伪随机比特Quasi Random Bit 带宽分配Bandwidth allocation 信源information source 信宿destination 数字化digitalize 数字传输技术Digital transmission technology 灰度图像Grey scale images 灰度级Grey scale level 幅度谱Magnitude spectrum 相位谱Phase spectrum 频谱frequency spectrum 智能设备Smart Device 软切换Soft handover 硬切换Hard Handover 相干检测Coherent detection 边缘检测Edge detection 冲突检测collision detection 业务集合service integration 业务分离/综合service separation/ integration 网络集合network integration 环形网Ring networks 令牌环网Token Ring network 网络终端Network Terminal 用户终端user terminal 用户电路line circuit 电路利用率channel utilization(通道利用率) 相关性coherence 相干解调coherent demodulation 数字图像压缩digital image compression 图像编码image encoding 有损/无损压缩lossy/lossless compression 解压decompression 呼叫控制Call Control 误差控制error control 存储程序控制stored program control 存储转发方式store-and-forward manner 语音\视频传输voice\video transmission 视频点播video-on-demand(VOD) 会议电视Video Conference 有线电视cable television 量化quantization 吞吐量throughput 话务量traffic 多径分集Multipath diversity 多媒体通信MDM Multimedia Communication 多址干扰Multiple Access Interference 人机交互man machine interface 交互式会话Conversational interaction

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