1N60A Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
1N60A Power MOSFET
0.5 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R DS(ON) =15?@V GS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C RSS = 3.0 pF(max))
* Fast switching capability * Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
*Pb-free plating product number: 1N60AL
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
1N60A-x-T92-B 1N60AL-x-T92-B TO-92 G D S Tape Box 1N60A-x-T92-K 1N60AL-x-T92-K TO-92 G D S Bulk 1N60A-x-T92-R 1N60AL-x-T92-R TO-92 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
1N60A-A 600 V
Drain-Source Voltage 1N60A-B V DSS
650 V
Gate-Source Voltage V GSS ±30 V
T C = 25℃ 0.5
Continuous Drain Current T C = 100℃ I D 0.4
A
Pulsed Drain Current (Note 1) I DM 2 A
Single Pulse(Note 2) E AS 50 mJ
Avalanche Energy
Repetitive(Note 1) E AR 3.6
4.0 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
T C =25 3 W
Total Power Dissipation Derate above 25°C P D
25 mW/
Junction Temperature T J +150 Operating Temperature T OPR -55 ~ +150 Storage Temperature T STG -55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction-to-Ambient θJA 120
/W ELECTRICAL CHARACTERISTICS (T J =25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
1N60A-A 600 V
Drain-Source Breakdown Voltage 1N60A-B BV DSS V GS = 0V, I D = 250μA
650 V
Drain-Source Leakage Current I DSS V DS = 600V, V GS = 0V 10μA
Forward V GS = 20V, V DS = 0V 100nA
Gate-Source Leakage Current Reverse I GSS
V GS = -20V, V DS = 0V -100nA
Breakdown Voltage Temperature
Coefficient
BV DSS /T J I D = 250μA, referenced to 25 0.4 V/
ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.2V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D = 0.5A 11 15? DYNAMIC CHARACTERISTICS Input Capacitance C ISS 100pF
Output Capacitance C OSS 20pF
Reverse Transfer Capacitance C RSS
V DS =25V, V GS =0V, f=1MHz 3 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D (ON) 12 34ns Turn-On Rise Time t R 11 32ns Turn-Off Delay Time t D (OFF) 40 90ns
Turn-Off Fall Time t F
V DD =300V, I D =0.5A, R G =5?
(Note 4,5) 18 46ns Total Gate Charge Q G 8 10nC
Gate-Source Charge Q GS 1.8 nC
Gate-Drain Charge Q GD
V DS =480V, V GS =10V, I D =0.8A
(Note 4,5)
4.0 nC
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS =0V, I SD = 1.2A 1.6 V Maximum Continuous Drain-Source Diode Forward Current
I S 1.2 A
Maximum Pulsed Drain-Source Diode
Forward Current
I SM
4.8 A
Reverse Recovery Time t RR 136 ns Reverse Recovery Charge Q RR V GS =0V, I SD = 1.2A
di/dt = 100A/μs
0.3 μC Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=92mH, I AS =0.8A, V DD =50V, R G =0?, Starting T J =25 3. I SD ≤1.0A, di/dt ≤100A/μs, V DD ≤BV DSS , Starting T J =25
4. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%
5. Essentially independent of operating temperature.
TEST CIRCUITS AND WAVEFORMS
V DD
V GS (Driver)
I SD (D.U.T.)
Body Diode
Forward Voltage Drop
V DS (D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS(Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
10V
L
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS
100
10
10
Drain-Source Voltage, V DS (V)
D r a i n C u r r e n t , I D (A )
Output Characteristics
10-1
100
10-1
2
Gate-Source Voltage, V GS (V)
D r a i n C u r r e n t , I D (A )
Transfer Characteristics
46810
00.0
D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) ( )
Drain Current, I D (A)
0.5
1.0
2.5
1.5
2.0
5101525
30
On-Resistance vs. Drain Current
20
100
10-1
0.2
Source-Drain Voltage, V SD (V)
R e v e r s e D r a i n C u r r e n t , I D R (A )
Source-Drain Diode Forward Voltage 1.6
0.4
0.6
0.8
1.0
1.2
1.4
C a p a c i t a n c e (p F )
G a t e -S o u r c e V o l t a g e , V G S (V )
TYPICAL CHARACTERISTICS (Cont.)
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Thermal Response
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1010101010
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