IRFM中文资料

V GS Gate – Source Voltage I D Continuous Drain Current @ V GS = 10V , T C = 25°C @ V GS = 10V , T C = 100°C

I DM Pulsed Drain Current P D Max. Power Dissipation @ T C = 25°C

Linear Derating Factor I L Avalanche Current , Clamped 1dv / dt Peak Diode Recovery 2

R q JC Thermal Resistance Junction – Case R q JA Thermal Resistance Junction – Ambient R q CS Thermal Resistance Case – Sink

T J , T STG Operating Junction and Storage Temperature Range T L

Lead Temperature (1.6mm from case for 10s)

±20V 27.4A 17A 110A 150W 1.2W / °C 27.4A 5.5V / ns

0.83°C / W 48°C / W 0.21°C / W typ.–55 to 150°C

300°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–254 Metal Package

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated)

N–CHANNEL POWER MOSFET

FEATURES

? N–CHANNEL MOSFET ? HIGH VOLTAGE

?INTEGRAL PROTECTION DIODE

? HERMETIC ISOLATED TO-254 PAC

? CERAMIC SURFACE MOUNT PACK OPTION

V DSS 200V I D(cont)27.4A R DS(on)

0.100W

ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise stated)