BTA204-600CDG,127;中文规格书,Datasheet资料

1.Product profile

1.1General description

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.

1.2Features and benefits

3Q technology for improved noise immunity High blocking voltage capability High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt

Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only

1.3Applications

General purpose motor control circuits Home appliances

Rectifier-fed DC inductive loads e.g. DC motors and solenoids

1.4Quick reference data

BTA204-600C

3Q Hi-Com Triac

Rev. 03 — 9 May 2011

Product data sheet

Table 1.Quick reference data Symbol Parameter

Conditions

Min Typ Max Unit V DRM repetitive peak off-state voltage

--600V I TSM

non-repetitive peak on-state current full sine wave; T j(init)=25°C; t p =20ms; see Figure 4; see Figure 5

--25

I T(RMS)

RMS on-state current

full sine wave; T mb ≤107°C; see Figure 1; see Figure 2; see Figure 3--4A

2.Pinning information

3.Ordering information

Static characteristics

I GT

gate trigger current

V D =12V; I T =0.1A; T2+ G+; T j =25°C; see Figure 7--35mA V D =12V; I T =0.1A; T2+ G-; T j =25°C; see Figure 7--35mA V D =12V; I T =0.1A; T2- G-; T j =25°C; see Figure 7

--35

Table 1.Quick reference data …continued Symbol Parameter Conditions

Min Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol

1T1main terminal 1SOT78 (TO-220AB)

2T2main terminal 23G gate

mounting base; main terminal 2

12mb

sym051

T1G

Table 3.

Ordering information

Type number

Package Name

Description

Version BTA204-600C TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78BTA204-600C/DG

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

4.Limiting values

Table 4.Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit V DRM repetitive peak off-state voltage -600V I T(RMS)RMS on-state current full sine wave; T mb ≤107°C; see Figure 1; see Figure 2; see Figure 3

-4A I TSM

non-repetitive peak on-state current full sine wave; T j(init)=25°C; t p =20ms; see Figure 4; see Figure 5

-25A full sine wave; T j(init)=25°C; t p =16.7ms

-27A I 2t I 2t for fusing

t p =10ms; sine-wave pulse - 3.1A 2s dI T /dt rate of rise of on-state current I T =6A;I G =0.2A;dI G /dt =0.2A/μs

-100A/μs I GM peak gate current -2A P GM peak gate power -5W P G(AV)average gate power over any 20 ms period

-0.5W T stg storage temperature -40150°C T j

junction temperature

-125

°C

5.Thermal characteristics

Table 5.Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base

full cycle; see Figure 6--3K/W half cycle; see Figure 6-- 3.7K/W R th(j-a)

thermal resistance from junction to ambient

in free air

K/W

6.Characteristics

Table 6.Characteristics

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

I GT gate trigger current V D=12V;I T=0.1A; T2+ G+; T j=25°C;

see Figure 7

--35mA

V D=12V;I T=0.1A; T2+ G-; T j=25°C;

see Figure 7

--35mA

V D=12V;I T=0.1A; T2- G-; T j=25°C;

see Figure 7

--35mA

I L latching current V D=12V;I G=0.1A; T2+ G+;

T j=25°C;see Figure 8

--20mA

V D=12V;I G=0.1A; T2+ G-; T j=25°C;

see Figure 8

--30mA

V D=12V;I G=0.1A; T2- G-; T j=25°C;

see Figure 8

--20mA I H holding current V D=12V;T j=25°C; see Figure 9--20mA V T on-state voltage I T=5A;T j=25°C; see Figure 10- 1.4 1.7V

V GT gate trigger voltage V D=12V;I T=0.1A; T j=25°C;

see Figure 11

-0.7 1.5V

V D=400V;I T=0.1A; T j=125°C;

see Figure 11

0.250.4-V

I D off-state current V D=600V;T j=125°C-0.10.5mA Dynamic characteristics

dV D/dt rate of rise of off-state

voltage V DM=402V; T j=125°C; exponential

waveform; gate open circuit

1000--V/μs

dI com/dt rate of change of

commutating current V D=400V;T j=125°C; I T(RMS)=4A;

dV com/dt=20V/μs; snubberless

condition; gate open circuit

3--A/ms

t gt gate-controlled turn-on time I TM=12A; V D=600V; I G=0.1A;

dI G/dt=5A/μs

-2-μs

7.Package outline

Fig 12.Package outline SOT78 (TO-220AB)

分销商库存信息: NXP

BTA204-600C/DG,127