STP60N05-14中文资料

STP60N05-14STP60N06-14

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

PRELIMINARY DATA

s TYPICAL R DS(on) = 0.012 ?

s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100o C s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 175 o C OPERATING TEMPERATURE s VERY LOW R DS (on)

APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS

s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

March 1996

ABSOLUTE MAXIMUM RATINGS

1/5

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)

OFF

ON (?

)

DYNAMIC

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

) Pulse width limited by safe operating area

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STP60N05-14/STP60N06-14

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SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.

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. . .

STP60N05-14/STP60N06-14

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