TP30-xxx Series中文资料

TP30-xxx Series

BIDIRECTIONAL CROWBAR PROTECTION.VOLTAGE RANGE:FROM 62V TO 270V.HOLDING CURRENT :I H =150mA min.

REPETITIVE PEAK PULSE CURRENT :I PP =30A,10/1000μs.

JEDEC REGISTERED PACKAGE OUTLINE FEATURES

F126

(JEDEC DO-204AC)

The TP30-xxx series has been designed to protect telecommunication equipment against lightning surges and overvoltages induced by AC power lines.

DESCRIPTION

SCHEMATIC DIAGRAM

TRISIL TM

November 1998-Ed:5A

COMPLIES WITH THE FOLLOWING STANDARDS:Peak Surge Voltage (V)

Voltage Waveform (μs)Current Waveform (μs)Admissible

Ipp (A)

Necessary Resistor (?)

(CCITT)ITU-K20100010/7005/31025-(CCITT)ITU-K17150010/7005/31038-VDE0433200010/7005/3104010VDE08782000 1.2/501/2050-IEC-1000-4-5

level 2level 310/7001.2/505/3108/202550--FCC Part 68,lightning surge type A

150080010/16010/56010/16010/560655015.58.0FCC Part 68,lightning surge type B

10009/7205/32025-BELLCORETR-NWT-001089First level

250010002/1010/10002/1010/10001253015.023.3BELLCORETR-NWT-001089Second level 50002/102/1012515.0CNET l31-24

1000

0.5/700

0.8/310

-1/6

Symbol Parameter

Value Unit R th (j-l)Junction to leads

60°C/W R th (j-a)

Junction to ambient on printed circuit with standard footprint dimension

100

°C/W

THERMAL RESISTANCES Symbol Parameter

V RM Stand-off voltage

I RM Leakage current at stand-off voltage V R Continuous Reverse voltage V BR Breakdown voltage V BO Breakover voltage I H Holding current I BO Breakover current I PP Peak pulse current C

Capacitance

ELECTRICAL CHARACTERISTICS (T amb =25°C)Symbol Parameter

Value Unit P Power dissipation on infinite heatsink

T amb =50 °C 3W I PP Peak pulse current

10/1000μs 8/20μs 3060A I TSM Non repetitive surge peak on-state current tp =20ms 15A I 2t I 2t value for fusing

tp =20ms

1A 2s dV/dt Critical rate of rise of off-state voltage V RM 5

kV/μs T stg T j Storage temperature range Maximum junction temperature

-55to +150

150

°C °C T L

Maximumlead temperaturefor solderingduring 10sat 5mm forcase

230

°C

ABSOLUTE MAXIMUM RATINGS (T amb =25°C)TP30-xxx Series

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Type

I RM @V RM I R @V R V BO @I BO I H C

max

max note 1

max note 2

min note 3

typ note 4

typ note 5μA

μA

TP30-62TP30-68TP30-100TP30-120TP30-130TP30-180TP30-200TP30-220TP30-240TP30-270

2222222222566190108117162180198216243505050505050505050506268100120130180200220240270829013316017324026729332036080080080080080080080080080080015015015015015015015015015015050504040353530303030

20201616141412121212

Note 1:I R measured at V R guarantee V BRmin ≥V R Note 2:Measured at 50Hz (1cycle)-See test circuit 1.Note 3:See test circuit 2.Note 4:V R =1V,F =1MHz.Note 5:

V R =50V,F =1MHz.

TEST CIRCUIT 1FOR I BO and V BO parameters:

220V

static relay.

240

140

D.U.T

V BO measure

I BO measure

tp =20ms

Transformer 220V/800V

Auto

Transformer 220V/2A

V out

TEST PROCEDURE :

Pulse Test duration (tp =20ms):

-For Bidirectional devices =Switch K is closed -For Unidirectional devices =Switch K is open.V OUT Selection

-Device with V BO <250Volt

-V OUT =250V RMS ,R 1=140?.

-Device with V BO ≥ 250Volt

-V OUT =480V RMS ,R 2=240?.

TP30-xxx Series

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TP30-xxx Series

TEST CIRCUIT2for I H parameter.

-V P

D.U.T.

V BAT=-48V

Surge generator

This is a GO-NOGO Test which allows to confirmthe holding current(I H)level in a functional

test circuit.

TEST PROCEDURE:

1)Adjust the current level at the I H value by short circuiting the AK of the D.U.T.

2)Fire the D.U.T with a surge Current:Ipp=10A,10/1000μs.

3)The D.U.T will come back off-state within50ms max.

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1E-2

1E-11E+0

1E+11E+21E+305101520

t(s)

ITSM(A)F =50Hz

Fig.1:Non repetitive surge peak on-sate current versus overload duration (Tj initial =25°C).

567

102050

VT(V)

IT(A)Tj =25°C

Fig.4:On-state voltage versus on-state current (typical values).

-40

-20020

406080100120

0.00.20.40.60.81.01.21.41.61.82.0Tj(°C)

IH[Tj]/IH[Tj=25°C]Fig.2:Relative variation of holding current versus junction temperature.

1E-3

1E-21E-1

1E+01E+11E+25E+2

1E-11E+0

1E+1

1E+2

tp(s)

Zth(j-a)(°CW)Fig.5:Variation of thermal impedance junction to ambient versus pulse duration.

100

300

0.1

0.2

0.5

1.0

VR(V)

C[VR]/C[VR=1V]F =1MHz

Fig.3:Relative variation of junction capacitance versus reverse applied voltage (typical values).

Note:ForVRM uppe r than 56V,the curve is extrapolated (dotted line)

-40

-200

20406080100

0.90

0.95

1.00

1.05

1.10Tj(°C)

Vbo[Tj]/Vbo[Tj=25°C]62V

270V

Fig.6:Relative variation of V BO voltage versus junction temperature.

TP30-xxx Series

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Packaging :Tape and reel.Weight :0.40g

Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical component s in life support devices or systems without express written ap-proval of STMicroelectronics.

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PACKAGE MECHANICAL DATA F126(Plastic)(JEDEC DO-204AC)

REF.

DIMENSIONS

Millimeters Inches Min.Typ.Max.Min.Typ.Max.

A 6.05 6.20 6.350.2380.2440.250

B 2.95 3.00

3.050.1160.1180.120C 2631

1.024

1.220

0.76

0.81

0.860.0300.0320.034

ORDER CODE

TP 30-62

I PP =30A

VOLTAGE

TRISIL PROTECTION

MARKING :Logo,Date Code,Part Number.TP30-xxx Series

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