IRG4BC30FD1中文资料

IRG4BC30FD1

PD - 94773

09/03/03

https://www.360docs.net/doc/2410566714.html, 1

V CES = 600V

V CE(on) typ. = 1.59V

@V GE = 15V, I C = 17A

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features

Fast: optimized for medium operating frequencies

(1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than Generation 3.

IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics.

Industry standard TO-220AB package.

Benefits

Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. FRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less / no snubbing.

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

110100

10001

C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

V , Collector-to-Emitter Voltage (V)

110

100

1000

I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )GE

V , Gate-to-Emitter Voltage (V)

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1.0

1.5

2.0

2.5

-60

-40

-20

100120140160

C E V , C o l l e c t o r -t o -E m i t t e r V o l t a g e (V )

T , Junction Temperature (°C)J

0.01

0.1

0.00001

0.00010.0010.010.1110

t , Rectangular Pulse Duration (sec)1

t h J

T h e r m a l R e s p o n s e (Z )

010

100

125

150

M a x i m u m D C C o l l e c t o r C u r r e n t (A )

T , Case Temperature (°C)C

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage 0

R G , Gate Resistance (?)1600

1700

1800

1900

2000

T o t a l S w i c h i n g L o s s e s (m J

)

100

1000

V CE , Collector-toEmitter-Voltage(V)

02004006008001000120014001600

18002000C a p a c i t a n c e (p F )

Q G , Total Gate Charge (nC)

2468101214V G E , G a t e -t o -E m i t t e r V o l t a g e (V )

T J , Juntion Temperature (°C)

T o t a l S w i c h i n g L o s s e s (m J )

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 12 - Turn-Off SOA

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

110

100

1000

100

1000

V , Collector-to-Emitter Voltage (V)I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

Forward V oltage D rop - V FM (V)

10203040

I C , Collecto-to-Emitter (A)

1000

200030004000500060007000

8000

T o t a l S w i c h i n g L o s s e s (m J )

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 14 - Typical Reverse Recovery vs. di f /dt

Fig. 15 - Typical Recovery Current vs. di f /dt

Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt

1002003004005006007008009001000

di F /dt (A/μs)

255075100125

150

175200t r r (n s )

1002003004005006007008009001000

di F /dt (A/μs)

100200

300400500600

7008009001000Q r r (n C

)

1002003004005006007008009001000

di F /dt (A/μs)

200

400

600

800

1000

1200

1400

d i (r

e c )M / d t (A /μs

)

1002003004005006007008009001000

di F /dt (A/μs)

I R R M (A )

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Fig. 18a - Test Circuit for Measurement of

I LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t f

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E off , t d(off), t f

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E on , t d(on), t r

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E rec , t rr , Q rr , I rr

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html, 9

Vg GATE SIGNAL

DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0t1t2

Fig. 19 - Clamped Inductive Load Test Circuit

Fig. 20 - Pulsed Collector Current

Test Circuit

480V

4 X I C @25°C

Fig.18e - Macro Waveforms for Figure 18a's Test Circuit

IRG4BC30FD1

https://www.360docs.net/doc/2410566714.html,

Notes:

Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20). V CC =80%(V CES ), V GE =20V, L=10μH, R G = 23? (figure 19). Pulse width ≤ 80μs; duty factor ≤ 0.1%. Pulse width 5.0μs, single shot.

Energy losses include "tail" and diode reverse recovery, using Diode FD100H06A5.Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.360docs.net/doc/2410566714.html, for sales contact information . 09/03

TO-220 package is not recommended for Surface Mount Application.

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

- B -1.32 (.052)1.22 (.048)

0.55 (.022)0.46 (.018)

2.92 (.115)2.64 (.104)

4.69 (.185)4.20 (.165)

0.93 (.037)0.69 (.027)

4.06 (.160)3.55 (.140)

1.15 (.045) MIN

6.47 (.255)6.10 (.240)

3.78 (.149)3.54 (.139)

- A -10.54 (.415)10.29 (.405)

2.87 (.113)2.62 (.103)

15.24 (.600)14.84 (.584)

14.09 (.555)13.47 (.530)

1.40 (.055)1.15 (.045)

2.54 (.100)

0.36 (.014) M B A M

1 2 3

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

PART NUMBER

RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M

DATE CODE (YYWW)YY = YEAR WW = WEEK