FW907-TL-E;中文规格书,Datasheet资料

Features

? ON-resistance Nch: R DS (on)1=13m Ω(typ.), Pch: R DS (on)1=20m Ω(typ.) ? 4V drive

? N-channel MOSFET + P-channel MOSFET

Speci ? cations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol Conditions N-channel

P-channel

Unit Drain-to-Source Voltage V DSS 30--30V Gate-to-Source Voltage V GSS ±20±20V Drain Current (DC)I D 10--8A Drain Current (PW ≤10s)I D Duty cycle ≤1%11.5--9A Drain Current (PW ≤100ms)I

D Duty cycle ≤1%24--19A Drain Current (PW ≤10μs)I DP Duty cycle ≤1%

52--52

A Allowable Power Dissipation P D When mounted on ceramic substrate (2000mm 2

×0.8mm) 1unit, PW ≤10s 2.3W Total Dissipation P T When mounted on ceramic substrate (2000mm 2×0.8mm), PW ≤10s

2.5W Channel Temperature Tch 150

°C Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)7005A-003

FW907

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device Applications

Product & Package Information

? Package : SOP8? JEITA, JEDEC : SC-87, SOT96? Minimum Packing Quantity : 1,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

W907

LOT No.

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

Unit min typ max

[N-channel]

Drain-to-Source Breakdown Voltage V(BR)DSS I D=1mA, V GS=0V30V Zero-Gate Voltage Drain Current I DSS V DS=30V, V GS=0V1μA Gate-to-Source Leakage Current I GSS V GS=±16V, V DS=0V±10μA Cutoff Voltage V GS(off)V DS=10V, I D=1mA 1.2 2.6V Forward Transfer Admittance| yfs |V DS=10V, I D=10A 5.2S

Static Drain-to-Source On-State Resistance R DS(on)1I D=10A, V GS=10V1317mΩR DS(on)2I D=5A, V GS=4.5V2130mΩR DS(on)3I D=5A, V GS=4V2738mΩ

Input Capacitance Ciss V DS=10V, f=1MHz1000pF Output Capacitance Coss V DS=10V, f=1MHz170pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz100pF Turn-ON Delay Time t d(on)See speci? ed Test Circuit.12ns Rise Time t r See

speci? ed Test Circuit.75ns Turn-OFF Delay Time t d(off) See

speci? ed Test Circuit.57ns Fall Time t f See speci? ed Test Circuit.44ns Total Gate Charge Qg V DS=15V, V GS=10V, I D=10A17nC Gate-to-Source Charge Qgs V DS=15V, V GS=10V, I D=10A 3.6nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, V GS=10V, I D=10A 3.0nC Diode Forward Voltage V SD I S=10A, V GS=0V0.85 1.2V [P-channel]

Drain-to-Source Breakdown Voltage V(BR)DSS I D=--1mA, V GS=0V--30V Zero-Gate Voltage Drain Current I DSS V DS=--30V, V GS=0V--1μA Gate-to-Source Leakage Current I GSS V GS=±16V, V DS=0V±10μA Cutoff Voltage V GS(off)V DS=--10V, I D=--1mA--1.2--2.6V Forward Transfer Admittance| yfs |V DS=--10V, I D=--8A10S

Static Drain-to-Source On-State Resistance R DS(on)1I D=--8A, V GS=--10V2026mΩR DS(on)2I D=--4A, V GS=--4.5V3245mΩR DS(on)3I D=--4A, V GS=--4V3651mΩ

Input Capacitance Ciss V DS=--10V, f=1MHz875pF Output Capacitance Coss V DS=--10V, f=1MHz200pF Reverse Transfer Capacitance Crss V DS=--10V, f=1MHz150pF Turn-ON Delay Time t d(on)See speci? ed Test Circuit.8.1ns Rise Time t r See

speci? ed Test Circuit.73ns Turn-OFF Delay Time t d(off) See

speci? ed Test Circuit.84ns Fall Time t f See speci? ed Test Circuit.74ns Total Gate Charge Qg V DS=--15V, V GS=--10V, I D=--8A18nC Gate-to-Source Charge Qgs V DS=--15V, V GS=--10V, I D=--8A 2.1nC Gate-to-Drain “Miller” Charge Qgd V DS=--15V, V GS=--10V, I D=--8A 4.7nC Diode Forward Voltage V SD I S=--8A, V GS=0V--0.82--1.2V

Switching Time Test Circuit

[N-channel] [P-channel]

P Ω

V DD =15V

V OUT

P .G

V DD = --15V

V OUT

D r a i n C u r r e n t , I D -- A

Gate-to-Source V oltage, V GS -- V

Drain-to-Source V oltage, V DS -- V

D r a i n C u r r e n t , I D -- A

Gate-to-Source V oltage, V GS -- V

S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω

Ambient Temperature, Ta -- °C

S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω

IT15845

IT15843

IT15844

IT15846

[Nch]

S o u r c e C u r r e n t , I S -- A

Diode Forward V oltage, V SD --

Drain Current, I D -- A

F o r w a r d T r

a n s f e r A d m i t t a n c e , | y f s | -- S

S w i t c h i n g T i m e , S W T i m e -- n s

Drain Current, I D -- A

Total Gate Charge, Qg -- nC

G a t e -t o -S o u r c e V o l t a g e , V G S -- V

Drain-to-Source V oltage, V DS -- V

C i s s , C o s s ,

C r s s -- p F

Drain-to-Source V oltage, V DS -- V

D r a i n C u r r e n t , I D -- A

Gate-to-Source V oltage, V GS -- V

Drain-to-Source V oltage, V DS -- V

D r a i n C u r r e n t , I D -- A

IT15851

IT15852

0.11.00.01

101001001000

10100IT15849

IT15847

IT15848

0.01

0.11.0IT15850

0.11.010

10[Nch]

[Nch]0

--1--2--4--5--3--8

--6--7IT15853

IT15854

Gate-to-Source V oltage, V GS -- V

S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω

Ambient Temperature, Ta -- °C

S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω

S o u r c e C u r r e n t , I S -- A

Diode Forward V oltage, V SD -- V

Drain Current, I D -- A

F o r w a r d T r a n s f e r A d m i t t a n c

e , | y

f s | -- S

S w i t c h i n g T i m e , S W T i m e -- n s

Drain Current, I D -- A

Drain-to-Source V oltage, V DS -- V

C i s s , C o s s , C r s s -- p F

Drain-to-Source V oltage, V DS -- V

D r a i n C u r r e n t , I D -- A

Total Gate Charge, Qg -- nC

G a t e -t o -S o u r c e V o l t a g e , V G S -- V

IT15861

IT15856

IT15855

1000

100IT15860

10010IT15859

--0.01

--0.1

--1.0

70.11.010IT15857

IT15858

--10[Pch]

[Pch]IT15862

--0.1

--1.0

--0.01

--10--100

This catalog provides information as of July, 2010. Speci ? cations and information herein are subject to change without notice.

Note on usage : Since the FW907 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Allowable Power Dissipation(FET2), P D -- W

A l l o w a b l e P o w e r D i s s i p a t i o n (F E T 1), P D -- W

Ambient Temperature, Ta -- °C

A l l o w a b l e P o w e r D i s s i p a t i o n , P D -- W

IT15864

IT15863

分销商库存信息: ONSEMI

FW907-TL-E