PS4531EAP中文资料

Features

?Low On-Resistance (60 Ohm typ.) Minimizes Distortion and Error V oltages

?Single-Supply Operation (+2.0V to 12.0V)?Dual-Supply Operation (± 2.0V to ± 6.0V)

?Improved Second Sources for MAX4530/MAX4531/MAX4532?75 Ohm On-Resistance with ±5V supplies ?150 Ohm On-Resistance with ±5V supply ?TTL/CMOS Logic Compatible

?Fast Switching Speed, t ON and t OFF = 150ns & 120ns at ±4.5V ?Break-Before-Make action eliminates momentary crosstalk ?Rail-to-Rail Analog Signal Range ?Low Power Consumption, <1μW

?Narrow SOIC, and SSOP Packages Minimize Board Area

Applications

?Data Acquisition Systems ?Audio Switching and Routing ?Test Equipment ?PBX, PABX

?Telecommunication Systems ?

Battery-Powered Systems

Description

PS4530/PS4531/PS4532 are low voltage CMOS analog ICs config-ured as an 8-channel multiplexer (mux) (PS4530), two 4-channel muxes (PS4531), and three single-pole/double-throw switches (PS4532). These devices are pin compatible with the industry standard 74H4351/74HC4352/74HC4353. All devices have two complementary switch-enable inputs and address latching.The PS4530/PS4531/PS4532 operate from a single supply of +2V to +12V , or from dual supplies of ±2V to ±6V . On-resistance (150Ohm max.) is matched between switches to 8Ohm max. Each switch can handle rail-to-rail analog signals. Off-leakage current is only 1nA at T A = +25°C and 50nA at T A = +85o C.

All digital inputs have 0.8V and 2.4V logic thresholds, ensuring both TTL-logic and CMOS-logic compatibility when using ±5V or a single +5V supply.

Functional Block Diagrams and Pin Configurations

Top View PS4530

Top View PS4531

T op View PS4532

PS4530/PS4531/PS4532

Precision 8-Ch, 2-Ch, Latched Analog Multiplexers/Switches

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NARROW DIP/WIDE SO

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X = Don’t Care *ADDC not present of PS4531.Note:

NO_ and COM_ pins are identical and interchangeable. Either may be considered an input or an output;signals pass equally well in either direction. LE is independent of EN1 and EN2.

Truth Table

E L 2N E 1N E S

T I B S S E R D D A S

E H C T I W S N O *C D D A B D D A A D D A 0354S P 134S P 2354S P 010X X X s s e r d d a t s a L s s e r d d a t s a L s s e r d d a t s a L X 0X X X X n e p o s e h c t i w s l l A n e p o s e h c t i w s l l A n e p o s e h c t i w s l l A X X 1X X X n e p o s e h c t i w s l l A n e p o s e h c t i w s l l A n e p o s e h c t i w s l l A 1

O N -M O C ,A 0O N -A M O C B 0O N -B M O C ,A C N -A M O C ,B C N -B M O C C C N -C M O C 1100011

O N -M O C ,A 1O N -A M O C B 1O N -B M O C ,A O N -A M O C ,B C N -B M O C C C N -C M O C 1100102

O N -M O C ,A 2O N -A M O C B 2O N -B M O C ,A C N -A M O C ,B O N -B M O C C C N -C M O C 1100113

O N -M O C ,A 3O N -A M O C B 3O N -B M O C ,A O N -A M O C ,B O N -B M O C C C N -C M O C 1101004

O N -M O C ,A 0O N -A M O C B 0O N -B M O C ,A C N -A M O C ,B C N -B M O C C O N -C M O C 1101015

O N -M O C ,A 1O N -A M O C B 1O N -B M O C ,A O N -A M O C ,B C N -B M O C C O N -C M O C 1101106

O N -M O C ,A 2O N -A M O C B 2O N -B M O C ,A C N -A M O C ,B O N -B M O C C O N -C M O C 1101117

O N -M O C ,A 3O N -A M O C B

3O N -B M O C ,A O N -A M O C ,B O N -B M O C C

O N -C M O C

Note:

Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)Voltages Referenced to V–

V +.................................................................................................–0.3V to +13V Voltage into Any Terminal (1)

or ±20mA (whichever occurs first).......................................–0.3V to (V+ +0.3V)Continuous Current into Any Terminal...................................................±20mA Peak Current, NO, NC, or COM_

(pulsed at 1ms, 10% duty cycle ..............................................................±40mA ESD per Method 3015.7...........................................................................>2000V Continuous Power Dissipation (T A = +70°C)

SO (derate 10.00mW/°C above +70°C)..................................................800mW SSOP (derate 8.00mW/°C above +70°C)...............................................640mW Operating Temperature Ranges

PS453_C_P...................................................................................0°C to +70°C PS453_E_P ...............................................................................–40°C to +85°C Storage Temperature Range .....................................................–65°C to +150°C Lead Temperture (soldering, 10s ...............................................................+30°C

Note:

Voltages exceeding V+ or V– on any signal terminal are clampled by internal diodes.Limit forward-diode current to maximum currant rating.

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Electrical Specifications - Dual Supplies

(V+ = +5V ±10%, V– = –5V ±10%, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.8V, T A = T MIN to T MAX ,unless otherwise noted)

e t e m a r a P l

o b m y S s

n o i t i d n o C n i M )2(p y T )2(x a M )

2(s

t i n U h

c t i w S e

g n a R l a n g i S g o l a n A V ,M O C V ,

O N V _

C N e t o N )

3(–

V +V V

c n a t s i s e R n O l e n n a h C R N

O I O N V ,A m 2=M O C ,V 5.3±=V 5.4–=–V ,V 5.4=+V T A C °52+=0

253m h O T A T =N I M T o t X A M 54g n i h c t a M e c n a t s i s e R -n O s l a n n a h C n e e w t e B )4(?R N

O I O N V ,A m 2=M O C ,V 5.3±=V 5.4–=–V ,V 5.4=+V T A C °52+=68T A T =N I M T o t X A M 8

01s s s e n t a l F e

c n a t s i s e R -n O )

5(R )

N O (T A L F I O N ,

A m 2=V M O C ;V 3+,V 0,V 3–=V

5–=–V ;V 5=+V T A C °52+=6T A T =N I M T o t X A M 8t n e r r u C e g a k a e L f f O -O N )6(I )

F F O (O N V O N V ,V 5.4±=M O C ,V 5.4±=V 5.5–=–V ,V 5.5=+V T A C °52+=08–10.008n ΑT A T =N I M T o t X A M 001–001e g a k a e L f f O -M O C t n e r r u C )

6(I )

F F O (M O C V M O C V ,V 5.4±=O N ,V 5.4±V

5.5–=–V ,V 5.5=+V 0

354S P T A C °52+=08–10.008T A T =N I M T o t X

A M 001–001V M O C V ,V 5.4±=O N ,V 5.4±V

5.5–=–V ,V 5.5=+V ,1354S P 2354S P T A

°52+=08–10.008T A T

=N I M T o t X A M 001–001e

g a k a e L n O -M O C t n e r r u C )

6(I )

N O (M O C V M O C ,V 5.4±=,V 5.5=+V V

5.5–=–V 0

354S P T A C °52+=08–10.008T A T =N I M T o t X

A M 001–001,1354S P 2354S P T A C

°52+=08–10.008T A T =N I M T o t X

A M 0

01–0

Electrical Specifications - Dual Supplies (continued)

(V+ = +5V ±10%, V– = –5V ±10%, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.8V, T A = T MIN to T MAX ,unless otherwise noted)

e t e m a r a P l

o b m y S s

n o i t i d n o C n i M )

2(p y T )

2(x a M )

2(s

t i n U t u p n I c i g o L l a t i g i D d l o h s e r h T h g i H c i g o L V ,H _D D A V ,

H _N E V E L T A T =N I M T o t X A M 4

.2V

d l o h s

e r h T w o L c i g o L V ,H _D D A V ,

H _N E V E L T A T =N I M T o t X

A M 8

.0h t i w t n e r r u C t u p n I h g i H e g a t l o V t u p n I I ,H _D D A I ,

H _N E I E L V H _D D A V ,V 4.2=L _D D A V

8.0=1

.0–1

0.01

.0μΑ

h t i w t n e r r u C t u p n I w o L e g a t l o V t u p n I I ,L _D D A I ,

L _N E I E

L V H _D D A V ,V 4.2=L _D D A V

8.0=y

l p p u S e g n a R y l p p u S r e w o P –V ,+V 0.2±6±V

n e r r u C y l p p u S e v i t i s o P +

I V N E V =_D D A V ==E L +V ,+V /V 0V

5.5–=–V ,V 5.5=T A C °52+=1–1

00.01T A T =N I M T o t X A M 01–01t n e r r u C y l p p u S e v i t a g e N –

I V N E V =_D D A V ==E L +V ,+V /V 0V

5.5–=–V ,V 5.5=T A C °52+=1–100.01T A T =N I M T o t X A M 01–01I D N G t n e r r u C y l p p u S I D

N G V N E V =_D D A V ==E L +V ,+V /V 0V

5.5–=–V ,V 5.5=T A C °52+=1–10.01T A T =N I M T o t X

A M 0

1–0

1c i m a n y D e

m i T n o i t i s n a r T t S N A R T 1e r u g i F T A C °52+=06051s

n T A T =N I M T o t X A M 0

52l a v r e t n I e k a M -e r o f e B -k a e r B t M B B 3e r u g i F T A C °52+=4

01e

m i T n O -n r u T e l b a n E t )

N E (N O 2

e r u g i F T A C °52+=0

1051T A T =N I M T o t X A M 0

52e m i T f f O -n r u T e l b a n E t )N E (F F O 2

e r u g i F T A C °52+=0

4001T A T =N I M T o t X A M 0

51l e n n a h C ,e m i T p u t e S e l b a n E h c t a L o t t c e l e S t S 4

e r u g i F T A C °52+=05T A T =N I M T o t X A M 06e l b a n E h c t a L ,e m i T d l o H t c e l e S l e n n a h C o t t H 6

e r u g i F T A C °52+=0T A T =N I M T o t X A M 0h t d i W e s l u P e l b a n E h c t a L t W P M 5

e r u g i F T A C °52+=06T A T =N I M T o t X

A M 07n o i t c e j n I e g r a h C )3(Q T A C

°52+=5

.15C

p n o i t a l o s I f f O )

7(V O

S I V 2N E R ,V 0=L m h O k 1=z

H M 1=f 5

6–B

d s l

e n n a h C n e e w t e B k l a t s s o r C V T

C V 1N E R ,V 0=2N E ,V 4.2=V ,z H M 1=f N E G ,p -p V 1=R =L m

h O k 12

9–

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Electrical Characteristics - Single 5V Supply

(V+ = +5V ±10%, V– = –0V, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.8V, T A = T MIN to T MAX ,unless otherwise noted)

r e t e m a r a P l o b m y S s n o i t i d n o C n i M )2(p y T )2(x a M )

2(s

t i n U D H T ,n o i t r o t s i D T A C

°52+=5

20.0t u p n I c i g o L e c n a t i c a p a C C N I z

H M 1=f 3F

p e

c n a t i c a p a C f f O -O N C )

F F O (O N V ,z H M 1=f N E V =M O C V

0=3e c n a t i c a p a C f f O -M O C C )F F O (M O C ,

z H M 1=f V 2N E V =M O C V

0=0

354S P 511354S P 92

354S P 6e c n a t i c a p a C n O -M O C C )

N O (M O C ,

z H M 1=f V 1N E V =M O C V 0=V 2N E V

4.2=0354S P 621354S P 022

354S P 7

1Electrical Specifications - Dual Supplies (continued)

(V+ = +5V ±10%, V– = –5V ±10%, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.8V, T A = T MIN to T MAX ,unless otherwise noted)

r e t e m a r a P l

o b m y S s

n o i t i d n o C n i M )

2(p y T )

2(x a M )

2(s

t i n U h

c t i w S e g n a R l a n g i S g o l a n A V M O C V ,O

N e t o N )

3(0

+V V

e c n a t s i s e R -n O R ON

I O N V ,A m 1=M O C V 5.3=5.4=+V V

T A C °52+=5

256m h O T A T =N I M T o t X A M 57e c n a t s i s e R -n O n e e w t e B g n i h c t a M s l e n n a h C )

4,3(?R ON I O N V ,A m 1=M O C V 5.3=5.4=+V V

T A C °52+=1

8T A T =N I M T o t X A M 2

1s s e n t a l F e c n a t s i s e R -n O R T

A L F I O N V ,A m 1=M O C ,V 1,V /2,V 3=5.4=+V V

T A C °52+=4

e g a k a e L

f f O -O N t n e r r u C )

8(I )

F F O (O N V O N V ,V 5.4=M O C ,V 1,V 5.4=5.4=+V V

T A C °52+=08–08A

n T A T =N I M T o t X A M 001–001e g a k a e L f f O -M O C t n e r r u C )

8(I )

F F O (M O C V M O C ;V 1,V 5.4=V O N V 1=;V 5.4,V

5.5=+V 0

354S P T A C °52+=08–08T A T =N I M T o t X A M 001–001,354S P 2354S P T A C °52+=08–08T A T =N I M T o t X A M 001–001e g a k a e L n O -M O C t n e r r u C )

8(I )

N O (M O C 0

354S P T A C °52+=08–08T A T =N I M T o t X A M 001–001,1354S P 2

354S P T A C °52+=08–08T A T =N I M T o t X

A M 0

01–0

e t e m a r a P l o b m y S s n o i t i d n o C n i M )2(p y T )2(x a M )2(s

t i n U t u p n I c i g o L l a t i g i D d l o h s e r h T h g i H -c i g o L V ,H _D D A V ,H _N E V E L T A T =N I M T o t X

A M 4

.2V

d l o h s

e r h T w o L -c i g o L V ,L _D D A V ,L _N E V E L 8

.0h t i w t n e r r u C t u p n I h g i H e g a t l o V t u p n I I ,H _D D A I ,H _N E I E L V H V ,V 4.2=L V 8.0=1.0–1.0μΑ

h t i w t n e r r u C t u p n I w o L e g a t l o V t u p n I I ,L _D D A I ,L _N E I E

L y

l p p u S e g n a R y l p p u S -e v i t i s o P 0

.221V

n e r r u C y l p p u S -e v i t i s o P +

I V _N E V =D D A V =E L ;+V ,V 0=V

0=–V ;V 5.5=+V T A =C °52+0.1–0.1μΑ

T A T =N I M T o t X A M 01–01t n e r r u C y l p p u S -e v i t a g e N –I T A =C °52+0.1–0.1T A T =N I M T o t X A M 01–01I D N G t n e r r u C y l p p u S I D

N G T A =C °52+0.1–0.1T A T =N I M T o t X A M 0

1–0

1c i m a n y D e

m i T n o i t i s n a r T t S N A R T V ,1e r u g i F O N V 3=T A =C °52+09002s

n T A T =N I M T o t X A M 0

52l a v r e t n I e k a M -e r o f e B -k a e r B t M B B 3e r u g i F )3(T A =C °52+0

102e m i T n O -n r u T e l b a n E )

3(t )N E (N O 2

e r u g i F T A =C °52+0

01002T A T =N I M T o t X A M 052e m i T f f O -n r u T e l b a n E )3(t )

N E (F F O 3

e r u g i F T A =C °52+0

4001T A T =N I M T o t X A M 5

21l e n n a h C ,e m i T p U -t e S e l b a n E h c t a L o t t c e l e S t S 7

e r u g i F T A =C °52+05T A T =N I M T o t X

A M 06e l b a n E h c t a L ,e m i T d l o H t c e l e S l e n n a h C o t t H T A =C °52+0T A T =N I M T o t X A M 0e l b a n E h c t a L ,h t d i W e s l u P t W P M T A =C °52+06T A T =N I M T o t X

A M 0

7n o i t c e j n I e g r a h C )

3(Q

C ,7e r u g i F L V ,F n 1=O N V

0=T A =C

°52+5.15C

p Electrical Characteristics - Single 5V Supply

(V+ = +5V ±10%, V– = –0V, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.8V, T A = T MIN to T MAX , unless otherwise noted)

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Electrical Characteristics - Single 3V Supply

(V+ = +2.7V to 3.6V, V– = –0V, GND = 0V, V ADD_H = V EN_H = V LE = 2.4V, V ADD_L = V EN_L = 0.5V, T A = T MIN to T MAX , unless otherwise noted)

Notes:

2.The algebraic convention, where the most negative value is a minimum and the most positive is a maximum,is used in this data sheet.

3.Guaranteed by design

4.?R ΟΝ = R ΟΝ (max) - R ΟΝ (min)

5.Flatness is defined as the difference between the maximum and minimum value of on-resistance measured over the specified analog ranges, i.e., VNO = 3V to 0V and 0V to –3V.

6.Leakage parameters are 100% tested at maximum rated hot temperature and guaranteed by correlation at T A = +25oC.

7.Worst-case isolation is on channel 4 because of its proximity to the COM pin.Off isolation = 20log V COM /V NO , V COM = output, V NO = input to off switch

8.Leakage testing at single supply is guaranteed by testing with dual supplies.

e t e m a r a P l o b m y S s n o i t i d n o C n i M )2(p y T )2(x a M )2(s

t i n U h

c t i w S e g a n R l a n g i S g o l a n A V G

O L A N A 3

e t o N 0

+V V e c n a t s i s e R -n O R N

O I O N V ,A m 1=M O C V 5.1=V

7.2=+V T A C °52+=5

7581m

h O T A T =N I M T o t X

A M 0

52c i m a n y D e m i T n o i t s i s n a r T )3(t S N A R T V ,1e r u g i F N I V

4.2=V 1O N V ,V

5.1=8O N V 0=T A C

°52+=051053s

n e m i T n O -n r u T e l b a n E )3(t )N E (N O V ,3e r u g i F H N I V 4.2=V L N I V ,V 0=1O N V 5.1=051053e m i T f f O -n r u T e l b a n E )3(t )

N E (F F O V ,3e r u g i F H N I V 4.2=V L N I V ,V 0=1O N V

5.1=0

51l e n n a h C ,e m i T p U -t e S e l b a n E h c t a L o t t c e l e S t S

e t o N 0

01e l b a n E h c t a L ,e m i T d l o H t c e l e S l e n n a h C o t t H 0e

l b a n E h c t a L ,h t d i W e s l u P t W

P M 0

Applications Information

Power-Supply Considerations Overview

The PS4530/PS4531/PS4532 construction is typical of most CMOS analog Switches. They have three supply pins: V+, V, and GND. V+ and V- drive the the internal CMOS switches and set the limits of the analog voltage on any switch. Reverse ESD-protection diodes are internally connected between each analog-signal pin and both V+ and V-. One of these diodes conducts if any signal exceeds V+ or V-. During normal operation, these and other reverse-biased ESD diodes leak, forming the only current drawn from V+ or V–. Virtually all of the analog leakage current comes from the ESD diodes. Although the ESD diodes on a given signal pine are iden-tical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or V- and the analog signal. This means their leakages vary as the signal varies. The difference in the two diode leakages to the V+ and V– pins constitutes the analog-signal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. For this reason, both sides of a given switch can show leakage currents of either the same or opposite polarity. The signal paths and GND are not connected.

V+ and GND power the internal logic and logic-level translators, and set both the input and output logic limits. The logic level translators convert the logic levels into switched V+ and V- sig-nals to drive the analog signals’ gates. This drive signal is the only connection between the logic supplies and signals and the analog supplies. V+ and V- have ESD-protection diodes to GND.

The logic-level thresholds are TTL/CMOS compatible when V+ = +5V. As V+ rises, the threshold increases slightly, so when V+ reaches +12V, the threshold is about 3.1V – above the TTL guaranteed, high-level minimum of 2.8V, but still compatible with CMOS outputs.

Bipolar Supplies

The PS4530/PS4531/PS4532 operate with bipolar supplies between ±2.0V and ±6V. The V+ and V- supplies need not be symmetrical, but their sum cannot exceed the +13V absolute maximum rating. Single Supply

The PS4530/PS4531/PS4532 operate from a single supply between +2V and 12V when V- is connected to GND. All of the bipolar precautions must be observed. At room temperature, they actually work with a single supply at, near, or below +1.7V, although as supply voltage decreases, switch on-resistance and switching times become very high.

High-Frequency Performance

In 50Ohm systerns, signal response is reasonably flat up to 50MHz (see Typical Operating Characteristics). Above 20MHz, the on response has several minor peaks that are highly layout depen-dent. The problem is not in turning the switch on, but in turning it off. The off-state switch acts lilke a capacitor and passes higher frequencies with less attenuation. At 10MHz, off isolation is about –65dB in 50Ohm systems, becoming worse (approximately 21dB per decade) as frequency increases. Higher circuit impedances also make off isolation worse. Adjacent channel attenuation is about 3dB above that of a bare IC socket, and is due entirely to capacitive coupling.

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Figure 1. Address Transition Time

Test Circuits/Timing Diagrams(continued)

Figure 2. Enable Switching Time

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Figure 3. Break-Before-Make Interval

Figure 4. Charge Injection

Figure 5. Off Isolation, On Loss, and Crosstalk

Figure 6. NO/COM Capacitance

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Figure 7. Setup and Hold Times, Minimum LE Width

Packaging Mechanical: 20-pin SOIC (S)

Packaging Mechanical: 20-pin SSOP (H)

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Ordering Information

Pericom Semiconductor Corporation

2380 Bering Drive ?San Jose, CA 95131 ? 1-800-435-2336?Fax (408) 435-1100 ?https://www.360docs.net/doc/4e14829419.html,

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I O S n i p -02Notes:

1.Thermal characteristics can be found on the company web site at https://www.360docs.net/doc/4e14829419.html,/packaging/mechanicals.php