WS128K32NV-15H1M中文资料

White Microelectronics ? (602) 437-1520 ? https://www.360docs.net/doc/4d18002219.html,

4

SRAM MODULES

1

128Kx32 3.3V SRAM MULTICHIP PACKAGE PRELIMINARY*

s 3.3 Volt Power Supply s Low Power CMOS

s TTL Compatible Inputs and Outputs

s Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight

WS128K32V-XG2TX - 8 grams typical WS128K32V-XG1UX - 5 grams typical WS128K32V-XH1X - 13 grams typical

*

This data sheet describes a product that is not fully qualified or characterized and is subject ot change without notice.

**Commercial and Industrial temperature ranges only.

FEATURES

s Access Times of 15**, 17, 20, 25, 35ns s Low Voltage Operation

s Packaging

?66-pin, PGA Type, 1.075 inch square Hermetic Ceramic HIP (Package 400)

?68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square (Package 509), 4.57mm (0.180 inch) high. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 2)

? 68 lead, Hermetic CQFP (G1U), 23.8mm (0.940 inch) square (Package 509), 3.56mm (0.140 inch) high.s Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8s Commercial, Industrial and Military Temperature Ranges

April 2001 Rev. 2

2

White Microelectronics ? Phoenix, AZ ? (602) 437-1520

White Microelectronics ? (602) 437-1520 ? https://www.360docs.net/doc/4d18002219.html,

4

SRAM MODULES

3

CAPACITANCE (T A = +25°C)

Parameter Symbol Conditions Max Unit OE capacitance C OE V IN = 0 V, f = 1.0 MHz 50

pF WE 1-4 capacitance

C WE

V IN = 0 V, f = 1.0 MHz

pF

HIP (PGA)20CQFP G2T/G1U 20

CS 1-4 capacitance C CS V IN = 0 V, f = 1.0 MHz 20pF Data I/O capacitance C I/O V I/O = 0 V, f = 1.0 MHz 20pF Address input capacitance

C AD

V IN = 0 V, f = 1.0 MHz

50

pF

This parameter is guaranteed by design but not tested.

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol Min Max Unit Operating Temperature T A -55+125°C Storage Temperature T STG -65+150°C Signal Voltage Relative to GND V G -0.5

4.6 V Junction Temperature T J 150°C Supply Voltage

V CC

-0.5 5.5

V

CS OE WE

Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L X L Write Data In Active L

H

H

Out Disable

High Z

Active

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Max Unit Supply Voltage V CC 3.0 3.6V Input High Voltage V IH 2.2V CC + 0.3V Input Low Voltage

V IL

-0.3

+0.8

V

DC CHARACTERISTICS

(V CC = 3.3V ±0.3V, V SS = 0V, T A = -55°C to +125°C)

Parameter Sym Conditions

Units Min

Max Input Leakage Current I LI V IN = GND to V CC

10μA Output Leakage Current

I LO CS = V IH , OE = V IH , V OUT = GND to V CC 10μA Operating Supply Current (x 32 Mode)I CC x 32CS = V IL , OE = V IH , f = 5MHz 500mA Standby Current I SB CS = V IH , OE = V IH , f = 5MHz 32mA Output Low Voltage V OL I OL = 8mA 0.4

V Output High Voltage

V OH

I OH = -4.0mA

2.4

V

4

White Microelectronics ? Phoenix, AZ ? (602) 437-1520

4

SRAM MODULES

AC CHARACTERISTICS (V CC = 3.3V, T A = -55°C to +125°C)

Parameter Symbol

-15*-17-20-25-35Units

Read Cycle Min Max

Min Max

Min Max

Min Max

Min Max

Read Cycle Time t RC 15

17

20

25

35

ns Address Access Time

t AA 15

17

20

25

35ns Output Hold from Address Change t OH 0

ns Chip Select Access Time t ACS 1517202535ns Output Enable to Output Valid t OE 10

11

12

15

20

ns Chip Select to Output in Low Z t CLZ 155555ns Output Enable to Output in Low Z t OLZ 15

5

5

5

5

ns Chip Disable to Output in High Z t CHZ 189101215ns Output Disable to Output in High Z

t OHZ 1

8

9

10

12

15

ns 1. This parameter is guaranteed by design but not tested.*Commercial and Industrial only.

AC CHARACTERISTICS (V CC = 3.3V, T A = -55°C to +125°C)

Parameter Symbol

-15*-17-20-25-35Units

Write Cycle Min Max

Min

Max

Min

Max

Min

Max

Min

Max

Write Cycle Time

t WC 1517202535ns Chip Select to End of Write t CW 1314152030ns Address Valid to End of Write t AW 1314152030ns Data Valid to End of Write t DW 1011121518ns Write Pulse Width t WP 1314152030ns Address Setup Time t AS 00000ns Address Hold Time

t AH 00000ns Output Active from End of Write t OW 15

5

5

5

5

ns Write Enable to Output in High Z t WHZ 18

9

10

10

15ns Data Hold Time

t DH

ns 1. This parameter is guaranteed by design but not tested.*Commercial and Industrial only.

White Microelectronics ? (602) 437-1520 ? https://www.360docs.net/doc/4d18002219.html,

5

6

White Microelectronics ? Phoenix, AZ ? (602) 437-1520

White Microelectronics ? (602) 437-1520 ? https://www.360docs.net/doc/4d18002219.html,

7

8

White Microelectronics ? Phoenix, AZ ? (602) 437-1520