L6226PDTR;L6226DTR;L6226D;L6226PD;L6226N;中文规格书,Datasheet资料
October 2009Doc ID 9452 Rev 41/31
L6226
DMOS dual full bridge driver
Features
■Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current (1.4 A DC)■R DS(on) 0.73 Ω typ. value @ T J = 25 °C ■Operating frequency up to 100 kHz
■Programmable high side overcurrent detection and protection ■Diagnostic output ■Paralleled operation ■Cross conduction protection ■Thermal shutdown ■Undervoltage lockout
■
Integrated fast free wheeling diodes
Applications
■Bipolar stepper motor ■
Dual or quad DC motor
Description
The L6226 is a DMOS dual full bridge designed for motor control applications, realized in
MultiPower-BCD technology, which combines isolated DMOS power transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6226 features thermal shutdown and a non-dissipative overcurrent
detection on the high side power MOSFETs plus a diagnostic output that can be easily used to implement the overcurrent protection.
https://www.360docs.net/doc/6a1518423.html,
Contents L6226
Contents
1Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . . 13
4.4Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6Paralleled operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1Output current capability and IC power dissipation . . . . . . . . . . . . . . . . . 21 7Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 9Ordering codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 10Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2/31Doc ID 9452 Rev 4
L6226Maximum ratings
Doc ID 9452 Rev 43/31
1 Maximum ratings
1.1
Absolute maximum ratings
1.2 Recommended operating conditions
Table 1.
Absolute maximum ratings
Symbol Parameter Test conditions Value Unit
V S Supply voltage
V SA = V SB = V S 60 V
V OD Differen tial voltage between
VS A , OUT1A , OUT2A , SENSE A and VS B , OUT1B , OUT2B , SENSE B
V SA = V SB = V S = 60V;
V SENSEA = V SENSEB = GND 60 V
OCD A ,
OCD B
OCD pins voltage range
-0.3 to +10 V PROGCL A ,
PROGCL B PROGCL pins voltage range
-0.3 to +7
V V BOOT Bootstrap peak voltage V SA = V SB = V S
V S + 10
V V IN ,V EN Input and enable voltage range
-0.3 to +7 V V SENSEA , V SENSEB Voltage range at pins SENSE A and SENSE B
-1 to +4
V
I S(peak)Pulsed supply current (for each V S pin), internally limited by the overcurrent protection V SA = V SB = V S ; t PULSE < 1ms 3.55 A
I S RMS supply current (for each V S pin)
V SA = V SB = V S 1.4 A
T stg , T OP
Storage and operating
temperature range
-40 to 150
°C
Table 2.
Recommended operating conditions
Symbol Parameter Test conditions Min.
Max.
Unit
V S Supply voltage
V SA = V SB = V S 8 52 V
V OD
Differential voltage between
VS A , OUT1A , OUT2A , SENSE A and VS B , OUT1B , OUT2B , SENSE B
VS A = VS B = V S ; VSENSE A = VSENSE B 52 V
V SENSEA , V SENSEB Vo ltage range at pins SENSE A
and SENSE B
(pulsed t W < t rr ) (DC) -6-1 6 1 V V I OUT
RMS output current
1.4
A
T J Operating junction temperature -25 +125 °C f sw
Switching frequency
100
kHz
Maximum ratings L6226
4/31Doc ID 9452 Rev 4
1.3 Thermal data
Table 3.
Thermal data
Symbol
Description
PowerDIP24SO24PowerSO36
Unit R th-j-pins Maximum thermal resistance junction-pins 19 15 -°C/W R th-j-case Maximum thermal resistance junction-case -- 2 °C/W R th-j-amb1 Maximum thermal resistance junction-am bient 1 44 52 -°C/W R th-j-amb1 Maximum thermal resistance junction-amb ient 2 --36 °C/W R th-j-amb1 Maximum thermal resistance junction-am bient 3 --16 °C/W R th-j-amb2 Maximum thermal resistance junction-ambient 4
59
78
63
°C/W
L6226Pin connections
Doc ID 9452 Rev 45/31
2 Pin connections
1. The slug is internally connected to pins 1,18,19 and 36 (GND pins).
Table 4.Pin description
Pin n.
Name
Type
Function
SO24/ PowerDIP24
PowerSO36
110IN1A Logic input Bridge A logic input 1.211IN2A Logic input Bridge A logic input 2.3
12
SENSEA
Power
supply
Bridge A source pin. This pin must be connected to power ground directly or through a sensing power resistor.
413OCDA
Open drain
output
Bridge A overcurrent detection and thermal protection pin.An internal open drain
transistor pulls to GND when overcurrent
on bridge A is detected or in case of thermal protection. 515OUT1A
Power output Bridge A output 1.
6, 7, 18, 191, 18, 19, 36GND
GND Signal ground terminals. In Power DIP and SO packages, these pins are also used for heat dissipation toward the PCB. 822OUT1B
Power output
Bridge B output 1.
Pin connections
L6226
6/31Doc ID 9452 Rev 4
924OCDB
Open drain
output
Bridge B overcurrent detection and thermal protection pin.An internal open drain
transistor pulls to GND when overcurrent
on bridge B is detected or in case of thermal protection.1025SENSEB Power supply
Bridge B source pin. This pin must be connected to power ground directly or through a sensing power resistor.
1126IN1B Logic input Bridge B input 112
27
IN2B
Logic input Bridge B input 2
1328PROGCLB R pin
Bridge B overcurrent level programming. A resistor connected between this pin and Ground sets the programmable current limiting value for the bridge B. By connecting this pin to Ground the
maximum current is set.This pin cannot be left non-connected.
1429ENB
Logic input Bridge B enable. LOW logic level switches
OFF all Power MOSFETs of bridge B. If not
used, it has to be connected to +5V .1530VBOOT
Supply voltage Bootstrap voltage needed for driving the upper Power MOSFETs of both bridge A and bridge B.1632OUT2B
Power output Bridge B output 2.
1733VSB
Power supply Bridge B power supply voltage. it must be connected to the supply voltage together with pin VSA.
204VSA
Power supply Bridge A power supply voltage. it must be connected to the supply voltage together with pin VSB.215OUT2A Power output Bridge A output 2.
22
7
VCP
Output
Charge pump oscillator output.
Table 4.
Pin description (continued)
Pin n.
Name
Type
Function
SO24/ PowerDIP24
PowerSO36
L6226
Pin connections
Doc ID 9452 Rev 47/31
23
8ENA
Logic input Bridge A enable. LOW logic level switches
OFF all Power MOSFETs of bridge A. If not
used, it has to be connected to +5V .
24 9 PROGCLA R Pin
Bridge A overcurrent level programming. A resistor connected between this pin and Ground sets the programmable current limiting value for the bridge A. By
connecting this pin to ground the maximum current is set.This pin cannot be left non-connected.
Table 4.
Pin description (continued)
Pin n.
Name
Type
Function
SO24/ PowerDIP24
PowerSO36
8/31Doc ID 9452 Rev 4
3 Electrical characteristics
T A = 25 °C, V S = 48 V , unless otherwise specified
Table 5.
Electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
V Sth(ON) T urn-on threshold 5.8 6.3 6.8 V V Sth(OFF) T urn-off threshold
5
5.5
6
V
I S Quiescent supply current All bridges OFF;
T J = -25 °C to 125 °C (1)
5 10 m T j(OFF)
Thermal shutdown temperature
165
°C
Output DMOS transistors R DS(ON)
High-side + low-side switch ON resistance T J = 25 °C 1.47 1.69 Ω
T J =125 °C (1)
2.35 2.70
I DSS
Leakage current
EN = Low; OUT = V S 2 mA EN = Low; OUT = GND
-0.3
mA
Source drain diodes
V SD Forward
ON voltage I SD = 2.8A, EN = LOW 1.15 1.3
V t rr Reverse recovery time I f = 1.4A
300 ns t fr
Forward recovery time
200
ns
Logic input V IL Low level logic input voltage -0.3 0.8 V V IH High level logic input voltage 2 7
V I IL Low level logic input current GND logic input voltage -10
μA I IH High level logic input current 7V logic input voltage
10 μA V th(ON)
T urn-on input threshold
1.8
2.0 V V th(OFF) T urn-off input threshold
0.8
1.3
V
V th(HYS) Input threshold hysteresis 0.25 0.5 V Switching characteristics
t D(on)EN Enable to out turn ON delay time (2)I LOAD =1.4 A, resistive load 500
800
ns
t D(on)IN Input to out turn ON delay time I LOAD =1.4 A, resistive load (dead time included) 1.9 μs
t RISE
Output rise time (2)
I LOAD =1.4A, resistive load
40 250
ns t D(off)EN Enable to out turn OFF delay time (2) I LOAD =1.4A, resistive load 500 800 1000 ns t D(off)IN
Input to out turn OFF delay time
I LOAD =1.4A, resistive load 500 800 1000
ns t FALL Output fall time
(2) I LOAD =1.4A, resistive load
40 250
ns
Doc ID 9452 Rev 49/31
Symbol Parameter Test conditions Min Typ Max Unit
t dt Dead time protection 0.5
1 μs
f CP
Charge pump frequency
-25°C 0.6 1 MHz Over current detection Is over Input supply over current detection threshold -25°C A ROPDR Open drain ON resistance I = 4mA 40 60 Ω t OCD(ON) OCD turn-on delay time (3)I = 4mA; C EN < 100pF 200 ns t OCD(OFF) OCD turn-off delay time (3) I = 4mA; C EN < 100pF 100 ns 1.Tested at 25 °C in a restricted range and guaranteed by characterization 2.See Figure 3 3.See Figure 4 Table 5. Electrical characteristics (continued) 10/31Doc ID 9452 Rev 4 分销商库存信息: STM L6226PDTR L6226DTR L6226D L6226PD L6226N