SI1300BDL-T1-E3中文资料

FEATURES

D TrenchFET r Power MOSFET D 100 % R g

Tested

RoHS

COMPLIANT

Si1300BDL

Vishay Siliconix

New Product

Document Number: 73557S–52388—Rev. A, 21–Nov–05

https://www.360docs.net/doc/6c11337926.html,

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V)

r DS(on) (W )

I D (A)a

Q g

(Typ)

0.85 at V GS = 4.5 V 0.420

1.08 at V GS =

2.5 V

0.35

335

Ordering Information: Si1300BDL–T1–E3

SC-70 (3-LEADS)

Top View

S Lot Traceability and Date Code

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T A = 25 _C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage V DS 20Gate-Source Voltage

V GS

"8V

T C = 25 _C

0.4Continuous Drain Current 150T C = 70 _C 0.32Continuous Drain Current (T J = 150 _C)

T A = 25 _C I D

0.37b, c T A = 70 _C

0.30b, c A

Pulsed Drain Current

I DM 0.5Continuous Source Drain Diode Current T C = 25 _C 0.18Continuous Source-Drain Diode Current

T A = 25 _C I S 0.14b, c T C = 25 _C

0.2Maximum Power Dissipation T C = 70 _C 0.14Maximum Power Dissipation

T A = 25 _C P D 0.19W

T A = 70 _C

0.12b, c Operating Junction and Storage Temperature Range

T J , T stg –55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient b, d t p 5 sec R thJA 540670Maximum Junction-to-Foot (Drain)

Steady State

R thJF

450

570

_C/W

Notes:

a.Based on T C = 25 _C.

b.Surface mounted on 1” x 1” FR4 board.

c.t = 5 sec

d.Maximum under steady state conditions is 360 _C/W.

Si1300BDL

Vishay Siliconix

New Product

https://www.360docs.net/doc/6c11337926.html,

Document Number: 73557S–52388—Rev. A, 21–Nov–05

SPECIFICATIONS (T J = 25 _C UNLESS OTHERWISE NOTED)

Parameter

Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 m A

V DS Temperature Coefficient D V DS /T J I =25020V GS(th) Temperature Coefficient D V GS(th)/T J I D = 250 m A

–2.8

mV/_C Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 0.4 1.0V Gate-Source Leakage

I GSS V DS = 0 V, V GS = "8 V "100nA Zero Gate Voltage Drain Current V DS = 20 V, V GS = 0 V 100nA Zero Gate Voltage Drain Current

I DSS

V DS = 20 V, V GS = 0 V, T J = 55 _C

m A On State Drain Current V DS w 5 V, V GS = 4.5 V 0.4On-State Drain Current a

I D(on)

V DS w 5 V, V GS = 2.5 V 0.12

Drain-Source On-State Resistance V GS = 4.5 V, I D = 0.250.650.85Drain-Source On-State Resistance a r DS(on)V GS =2.5 V, I D = 0.15

0.85

1.08

Dynamic b

Input Capacitance C iss 35Output Capacitance

C oss V DS = 10 V, V GS = 0 V, f = 1 MHz

13pF Reverse Transfer Capacitance C rss 4p

Total Gate Charge V DS = 10 V, V GS = 4.5 V, I D = 0.4560840Total Gate Charge Q g 335

503

Gate-Source Charge Q gs V DS = 10 V, V GS = 2.5 V, I D = 0.35

98pC Gate-Drain Charge Q gd 85Gate Resistance R g f = 1 MHz

712W

Turn-On Delay Time t d(on)712Rise Time

t r 1015Turn-Off Delay Time t d(off)V DD = 10 V, R L = 25 W

I D ^ 0.4 A, V GEN = 4.5 V, R g = 1 W

813ns Fall Time

t f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I S T C = 25 _C

0.18Pulse Diode Forward Current a I SM 0.4A Body Diode Voltage

V SD

I S = 0.05 A

0.7

1.2

Notes

a.Pulse test; pulse width v 300 m s, duty cycle v 2 %.

b.Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Si1300BDL

Vishay Siliconix

New Product

Document Number: 73557S–52388—Rev. A, 21–Nov–05

https://www.360docs.net/doc/6c11337926.html,

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V DS – Drain-to-Source Voltage (V)V GS – Gate-to-Source Voltage (V)

0.00.5

1.0

1.5

2.0

0.00

0.25

0.50

0.75

1.00

1.25

012

150

300

450600

0.60.8

1.0

1.2

1.4

1.6

–50

–250255075100125150

Q –Gate Charge

On-Resistance vs. Drain Current

– G a t e -t o -S o u r c e V o l t a g e (V )

Q g – Total Gate Charge (nC)

V DS – Drain-Source Voltage (V)

C – C a p a c i t a n c e (p F )

V G S – O n -R e s i s t a n c e (r D S (o n )W )

I D – Drain Current (A)Capacitance

On-Resistance vs. Junction Temperature

T J – Junction Temperature (_C)

r D S (o n ) – O n -R e s i s t a n c e (N o r m a l i z e d )

https://www.360docs.net/doc/6c11337926.html, 4

Document Number: 73557

S–52388—Rev. A, 21–Nov–05 V DS – Drain-to-Source Voltage (V)

*V GS u minimum V GS at which r DS(on)is specified

0.1110100

Si1300BDL

Vishay Siliconix

New Product

Document Number: 73557S–52388—Rev. A, 21–Nov–05

https://www.360docs.net/doc/6c11337926.html,

TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)

*The power dissipation P D is based on T J(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

0.01

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a co mpo site o f all qualified lo catio ns. Fo r related do cuments such as package/tape drawings, part marking, and reliability data, see https://www.360docs.net/doc/6c11337926.html,/ppg?73557.

Document Number: 91000

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Revision: 18-Jul-08

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