BCR1AM-12-TB中文资料
BCR1AM-12
Triac
Low Power Use
REJ03G0344-0100
Rev.1.00
Aug.20.2004 Features
?I T (RMS) : 1 A
?V DRM : 600 V
?I FGTI , I RGTI, I RGTⅢ : 5 mA (3 mA)Note5?I FGTⅢ : 10 mA ?Non-Insulated Type ?Glass Passivation Type
Outline
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications Maximum Ratings
Voltage class
Parameter Symbol
12
Unit Repetitive peak off-state voltage Note1V DRM600V
Non-repetitive peak off-state voltage Note1V DSM720V
Parameter
Symbol Ratings Unit Conditions
RMS on-state current I T (RMS) 1.0A Commercial frequency, sine full wave 360° conduction, Tc = 56°C Note3
Surge on-state current I TSM 10A 60Hz sinewave 1 full cycle, peak value,non-repetitive
I 2t for fusing
I 2t 0.41A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Peak gate power dissipation P GM 1W Average gate power dissipation P G (AV)0.1W Peak gate voltage V GM 6V Peak gate current I GM 0.5
A Junction temperature Tj – 40 to +125°C Storage temperature Tstg – 40 to +125
°C Mass
—
0.23
g
Typical value
Notes: 1.Gate open.
Electrical Characteristics
Rated value Parameter
Symbol Min.Typ.Max.Unit Test conditions
Repetitive peak off-state current I DRM ——0.5mA Tj = 125°C, V DRM applied On-state voltage V TM —— 1.6V Tc = 25°C, I TM = 1.5 A,
Instantaneous measurement Ι
V FGT Ι—— 2.0V ΙΙV RGT Ι—— 2.0V ΙΙΙV RGT ΙΙΙ—— 2.0V Gate trigger voltage Note2
ΙV V FGT ΙΙΙ—— 2.0V Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?
ΙI FGT Ι——5mA ΙΙI RGT Ι——5Note5mA ΙΙΙI RGT ΙΙΙ——5Note5mA Gate trigger current
Note2
ΙV
I FGT ΙΙΙ——10mA Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?
Gate non-trigger voltage V GD 0.1——V Tj = 125°C, V D = 1/2 V DRM Thermal resistance
R th (j-c)——50°C/W Junction to case Note3Critical-rate of rise of off-state
commutating voltage
Note4
(dv/dt)c
2
—
—
V/μs
Tj = 125°C
Notes: 2.Measurement using the gate trigger characteristics measurement circuit.
3.Case temperature is measured at the T 2 terminal 1.5 mm away from the molded case.
4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5.High sensitivity (I GT ≤ 3 mA) is also available. (I GT item: 1)
Performance Curves
Package Dimensions
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example
Straight type Vinyl sack500Type name BCR1AM-12 Lead form Vinyl sack500Type name – Lead forming code BCR1AM-12-A6 Form A8Taping2000Type name – TB BCR1AM-12-TB Note :Please confirm the specification about the shipping in detail.
https://www.360docs.net/doc/717216843.html, RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
? 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0