BCR1AM-12-TB中文资料

BCR1AM-12-TB中文资料
BCR1AM-12-TB中文资料

BCR1AM-12

Triac

Low Power Use

REJ03G0344-0100

Rev.1.00

Aug.20.2004 Features

?I T (RMS) : 1 A

?V DRM : 600 V

?I FGTI , I RGTI, I RGTⅢ : 5 mA (3 mA)Note5?I FGTⅢ : 10 mA ?Non-Insulated Type ?Glass Passivation Type

Outline

Applications

Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications Maximum Ratings

Voltage class

Parameter Symbol

12

Unit Repetitive peak off-state voltage Note1V DRM600V

Non-repetitive peak off-state voltage Note1V DSM720V

Parameter

Symbol Ratings Unit Conditions

RMS on-state current I T (RMS) 1.0A Commercial frequency, sine full wave 360° conduction, Tc = 56°C Note3

Surge on-state current I TSM 10A 60Hz sinewave 1 full cycle, peak value,non-repetitive

I 2t for fusing

I 2t 0.41A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Peak gate power dissipation P GM 1W Average gate power dissipation P G (AV)0.1W Peak gate voltage V GM 6V Peak gate current I GM 0.5

A Junction temperature Tj – 40 to +125°C Storage temperature Tstg – 40 to +125

°C Mass

0.23

g

Typical value

Notes: 1.Gate open.

Electrical Characteristics

Rated value Parameter

Symbol Min.Typ.Max.Unit Test conditions

Repetitive peak off-state current I DRM ——0.5mA Tj = 125°C, V DRM applied On-state voltage V TM —— 1.6V Tc = 25°C, I TM = 1.5 A,

Instantaneous measurement Ι

V FGT Ι—— 2.0V ΙΙV RGT Ι—— 2.0V ΙΙΙV RGT ΙΙΙ—— 2.0V Gate trigger voltage Note2

ΙV V FGT ΙΙΙ—— 2.0V Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?

ΙI FGT Ι——5mA ΙΙI RGT Ι——5Note5mA ΙΙΙI RGT ΙΙΙ——5Note5mA Gate trigger current

Note2

ΙV

I FGT ΙΙΙ——10mA Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?

Gate non-trigger voltage V GD 0.1——V Tj = 125°C, V D = 1/2 V DRM Thermal resistance

R th (j-c)——50°C/W Junction to case Note3Critical-rate of rise of off-state

commutating voltage

Note4

(dv/dt)c

2

V/μs

Tj = 125°C

Notes: 2.Measurement using the gate trigger characteristics measurement circuit.

3.Case temperature is measured at the T 2 terminal 1.5 mm away from the molded case.

4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

5.High sensitivity (I GT ≤ 3 mA) is also available. (I GT item: 1)

Performance Curves

Package Dimensions

Order Code

Lead form Standard packing Quantity Standard order code Standard order code example

Straight type Vinyl sack500Type name BCR1AM-12 Lead form Vinyl sack500Type name – Lead forming code BCR1AM-12-A6 Form A8Taping2000Type name – TB BCR1AM-12-TB Note :Please confirm the specification about the shipping in detail.

https://www.360docs.net/doc/717216843.html, RENESAS SALES OFFICES

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501

Renesas Technology Europe Limited.

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom

Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900

Renesas Technology Europe GmbH

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Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.

7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.

FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

? 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .1.0

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