STGB10NB40LZT4;中文规格书,Datasheet资料
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August 2003STGB10NB40LZ
N-CHANNEL CLAMPED 20A -D2PAK
INTERNALLY CLAMPED PowerMESH?IGBT
s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout,STMicroelectronics has designed an advanced family of IGBTs,the PowerMESH ?IGBTs,with outstanding
performances.The built in collector-gate zener exhibits a very precise
active clamping while the gate-emitter zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
ORDERING INFORMATION
TYPE V CES V CE(sat)I C STGB10NB40LZ
CLAMPED
<1.8 V
20A
SALES TYPE MARKING PACKAGE PACKAGING STGB10NB40LZT4
GB10NB40LZ
D
2PAK
TAPE &REEL
STGB10NB40LZ
2/10
ABSOLUTE MAXIMUM RATINGS
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
Symbol Parameter
Value Unit V CES Collector-Emitter Voltage (V GS =0)CLAMPED
V V ECR Emitter-Collector Voltage 18V V GE Gate-Emitter Voltage
CLAMPED
V I C Collector Current (continuos)at T C =25°C 20A I C Collector Current (continuos)at T C =100°C 10A I CM ( )Collector Current (pulsed)40A
Eas Single Pulse Energy Tc =25°C 300mJ
P TOT Total Dissipation at T C =25°C 150W Derating Factor
1W/°C E SD ESD (Human Body Model)4KV T stg Storage Temperature
–55to 175
°C
T j
Operating Junction Temperature
Rthj-case Thermal Resistance Junction-case Max 1°C/W Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Symbol Parameter
Test Conditions
Min.Typ.Max.Unit BV (CES)Clamped Voltage
I C =2mA,V GE =0,Tj=-40°C to 150°C 380410
440
V BV (ECR)Emitter Collector Break-down Voltage
I C =75mA,Tj=25°C 18V BV GE Gate Emitter Break-down Voltage
I G =±2mA
12
16V I CES Collector cut-off Current (V GE =0)
V CE =15V,V GE =0,T j =150°C 10μA V CE =200V,V GE =0,T j =150°C 100μA I GES Gate-Emitter Leakage Current (V CE =0)V GE =±10V ,V CE =0
±700
μA R GE
Gate Emitter Resistance
20
K ?
Symbol Parameter
Test Conditions
Min.Typ.
Max.Unit V GE(th)Gate Threshold Voltage V CE =V GE ,I C =250μA,T C =-40°C to 150°C
0.6
2.2V V CE(SAT)
Collector-Emitter Saturation Voltage
V GE =4.5V,I C =10A,Tj=25°C 1.2 1.8
V V GE =4.5V,I C =20A,Tj=25°C
1.3V
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STGB10NB40LZ
ELECTRICAL CHARACTERISTICS (CONTINUED)DYNAMIC
FUNCTIONAL CHARACTERISTICS
SWITCHING ON
SWITCHING OFF
(1)Pulse width limited by max.junction temperature.(**)Losses Include Also the Tail
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit g fs Forward Transconductance V CE =15V ,I C =10A
18S C ies Input Capacitance V CE =25V,f =1MHz,V GE =0
1300pF C oes Output Capacitance 105pF C res Reverse Transfer Capacitance 12pF Q g
Gate Charge
V CE =328V,I C =10A,V GE =5V
28
nC
Symbol
Parameter
Test Conditions
Min.
Typ.Max.
Unit II Latching Current V Clamp =328V,T C =125°C R GOFF =1K ?,V GE =5V 40
A U.I.S.
Functional Test Open Secondary Coil
R GOFF =1K ?,L =1mH ,Tc=125°C
13A
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(on)Turn-on Delay Time V CC =328V,I C =10A R G =1K ?,V GE =5V 1300ns t r Rise Time
270ns (di/dt)on Turn-on Current Slope V CC =328V,I C =10A R G =1K ?,V GE =5V
60A/μs Eon
Turn-on Switching Losses
V CC =328V,I C =10A,T C =25°C R G =1K ?,V GE =5V,T C =125°C
2.42.6
mJ mJ
Symbol
Parameter
Test Conditions
Min.
Typ.Max.
Unit t c Cross-over Time V cc =328V,I C =10A,R GE =1K ?,V GE =5V
3.6μs t r (V off )Off Voltage Rise Time 2μs t d (off )Delay Time 8μs t f Fall Time
1.4μs E off (**)Turn-off Switching Loss 5mJ t c Cross-over Time V cc =328V,I C =10A,R GE =1K ?,V GE =5V Tj =125°C
5.7μs t r (V off )Off Voltage Rise Time 2.7μs t d (off )Delay Time 9.2μs t f Fall Time
2.8μs E off (**)
Turn-off Switching Loss
8.7
mJ
STGB10NB40LZ
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5/10
STGB10NB40LZ
Gate Threshold vs Temperature
STGB10NB40LZ
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Total Switching Losses vs Collector Current
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STGB10NB40LZ
Fig.4:Gate Charge test Circuit
Fig.3:Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig.2:Unclamped Inductive Waveform
Fig.1:Unclamped Inductive Load Test
Circuit
STGB10NB40LZ
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1
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STGB10NB40LZ
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE
SHIPMENT (no suffix)*
D 2PAK FOOTPRINT
*on sales type
DIM.mm inch MIN.
MAX.MIN.
MAX.A 330
12.992
B 1.50.059
C 12.813.20.5040.520
D 20.20795G 24.426.40.960 1.039N 100
3.937
T
30.4 1.197
BASE QTY BULK QTY 1000
1000REEL MECHANICAL DATA
DIM.mm inch MIN.MAX.MIN.
MAX.
A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1
0.0750.082R 50 1.574
T 0.250.350.00980.0137
W
23.7
24.30.9330.956
TAPE MECHANICAL DATA
STGB10NB40LZ
10/10Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STGB10NB40LZT4