75N75-TF3-T中文资料

UNISONIC TECHNOLOGIES CO., LTD

75N75

Power MOSFET

75Amps, 75Volts

N-CHANNEL POWER MOSTFET

DESCRIPTION

The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast

switching speed, low thermal resistance, usually used at telecom and computer application.

FEATURES

* R DS(ON) = 12.5m ? @V GS = 10 V

* Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

TO-220

TO-252

TO-251

TO-220F

*Pb-free plating product number: 75N75L

ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating Package 1 2 3

Packing

75N75-TA3-T 75N75L-TA3-T TO-220 G D S Tube 75N75-TF3-T 75N75L-TF3-T TO-220F G D S Tube 75N75-TM3-T 75N75L-TM3-T TO-251 G D S Tube 75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel 75N75-TN3-T 75N75L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT

Drain to Source Voltage V DSS 75 V

T C = 25 75 A

Continuous Drain Current

T C = 100 I D 56 A

Drain Current Pulsed (Note 1) I DM 300 A

Gate to Source Voltage V GS ±20 V

Single Pulsed (Note 2)E AS 900 mJ

Avalanche Energy

Repetitive (Note 1) E AR 300

mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns

T C = 25 220 W

Total Power Dissipation Derating above 25 P D

1.4 W/

Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER SYMBOL MIN TYP MAX UNIT

Thermal Resistance Junction-Ambient θJA 62.5 /W Thermal Resistance Junction-Case θJC 0.8 /W Thermal Resistance Case-Sink θCS 0.5

/W ELECTRICAL CHARACTERISTICS (T C = 25 , unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μA 75 V Breakdown Voltage Temperature Coefficient BV DSS /△T J I D = 1mA,

Referenced to 25

0.08 V/

V DS = 75 V, V GS = 0 V 20 μA

Drain-Source Leakage Current I DSS V DS = 75 V, V GS = 0 V,

T J = 150

250 μA

Gate-Source Leakage Current V GS = 20V, V DS = 0 V 100 nA

Gate-Source Leakage Reverse I GSS

V GS = -20V, V DS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 μA 2.0 4.0 V Static Drain-Source On-State

Resistance

R DS(ON) V GS = 10 V, I D = 48 A 12.5 15 m ?

Dynamic Characteristics Input Capacitance C ISS 3300 pF

Output Capacitance C OSS 530 pF

Reverse Transfer Capacitance C RSS V GS = 0 V, V DS = 25 V

f = 1MHz

80 pF Switching Characteristics Turn-On Delay Time t D(ON) 12 ns Rise Time t R 79 ns

Turn-Off Delay Time t D(OFF) 80 ns

Fall Time t F V DD = 38V, I D =48A, V GS =10V, (Note 4, 5) 52 ns Total Gate Charge Q G 90 140 nC

Gate-Source Charge Q GS 20 35 nC

Gate-Drain Charge (Miller Charge) Q GD

V DS = 60V, V GS = 10 V

I D = 48A, (Note 4, 5)

30 45 nC

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Source-Drain Diode Ratings and Characteristics Continuous Source Current I S 75

Pulsed Source Current I SM 300 A

Diode Forward Voltage V SD I S = 48A, V GS = 0 V 1.4 V

Reverse Recovery Time t rr 90 ns Reverse Recovery Charge Q rr I S = 48A, V GS = 0 V dI F / dt = 100 A/μs 300 μC

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=0.24mH, I AS =48A, R G =20?, Starting T J =25

3. I SD ≤48A, di/dt ≤300A/μs, V DD ≤BV DSS , Starting T J =25

4. Pulse Test: Pulse Width ≤300μs,Duty Cycle ≤2%

5. Essentially independent of operating temperature.

TEST CIRCUITS AND WAVEFORMS

V DD

V GS (Driver)

I SD (D.U.T.)

Body Diode

Forward Voltage Drop

V DS

(D.U.T.)

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS (Cont.)

R L

V DS

90%

10%

V GS

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

10V

V DD

I AS

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

TYPICAL CHARACTERISTICS

10101010

Drain -Source Voltage , V DS (V)

D r a i n C u r r e n t , I D (A )

On-State Characteristics

Gate-Source Voltage , V GS (V)

Transfer Characteristics

0D r a i n -S

o u r c e O n -R

e s i s t a n c e , R D S (O N ) (m Ω)

Drain Current , I D (A)

30708012

On-Resistance Variation vs . Drain

102

10100

0.2Source-Drain Voltage , V SD (V)

R e v e r s e D r a i n C u r r e n t , I S D (A )

Reverse Drain Current vs . Allowable Case

Temperature 1.6

0.40.60.8 1.0 1.2 1.4

1050100

20406090

5Drain-Source Voltage , V DC (V)

C a p a c i t a n c e (p F )

Capacitance Characteristics

1000

10G a t e -t o -S o u r c e V o l t a g e , V G S (V )

Total Gate Charge, Q G (nC)

81012Gate Charge Characteristics

6402515203035

TYPICAL CHARACTERISTICS(Cont.)

-100

D r a i n -S o u r c e B r e a k d o w

n V o l t a g e , B V D S S (N o r m a l i z e d )

Junction Temperature , T J (℃)

-50

200

100

150Breakdown Voltage Variation vs .

D r a i n -S o u r c e

O n -R e s i s t a n c e , R D S (O N ), (N o r m a l i z e d )

-10050100150On-Resistance Variation vs . 01.0Junction Temperature , T J (℃)

-50200

0.1

Drain -Source Voltage, V D (V)

D r a i n C u r r e n t , I D ,(A )

Maximum Safe Operating

100

Case Temperature, T C (℃)

Maximum Drain Current vs . Case

Square Wave Pulse Duration , t 1 (sec)

T h e r m a l R e s p o n s e , Z θJ C (t )

11E-50.1

0.1

10Transient Thermal Response Curve

1E-41E-30.01