光耦TLP521

7.62

0.26

13°Max

7.62

234

765

13°Max

0.26Dimensions in mm

812378

16151096115

1214413

DB92546m-AAS/A3

Note 1Measured with input leads shorted together and output leads shorted together.Note 2Special Selections are available on request. Please consult the factory.

7/4/03

ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)

INPUT DIODE OUTPUT TRANSISTOR POWER DISSIPATION

DB92546m-AAS/A3

7/4/03

-30 0 25 50 75 100 125

Ambient temperature T A ( °C )150

200Ambient temperature T A ( °C )C o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )

302010

4050-30 0 25 50 75 100 125

Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature -30 0 25 50 75 100

Ambient temperature T A ( °C )

Collector-emitter voltage V CE ( V )

C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (S A T ) (V )

Collector-emitter Saturation Voltage vs. Ambient Temperature

100

510152025 0

0.040.080.120.160.200.24

0.28

F o r w a r d c u r r e n t I F (m A )

Collector Current vs. Low Collector-emitter Voltage

0 0.2 0.4 0.6 0.8 1.0

C o l l e c t o r c u r r e n t I C (m A )

Collector Current vs. Collector-emitter Voltage

Collector-emitter voltage V CE ( V )C o l l e c t o r c u r r e n t I C (m A

)

Current Transfer Ratio vs. Forward Current Forward current I F (mA)

C u r r e n t t r a n s f e r r a t i o C T R (%)

1 2 5 10 20 50

801201602002400 2 4 6 8 100

1020304050

40280320