MSA-0370中文资料
Cascadable Silicon Bipolar MMIC?Amplifiers Technical Data
Features
?Cascadable 50 ? Gain Block ? 3 dB Bandwidth:DC to 2.8 GHz ?12.0 dB Typical Gain at 1.0?GHz ?10.0 dBm Typical P 1dB at 1.0?GHz ?Unconditionally Stable (k>1)?Hermetic Gold-ceramic Microstrip Package
MSA-0370
70 mil Package
Typical Biasing Configuration
R V CC > 7 V
IN
OUT
Description
The MSA-0370 is a high perfor-mance silicon bipolar Monolithic Microwave Integrated Circuit
(MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 ? gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.The MSA-series is fabricated using HP’s 10 GHz f T , 25?GHz f MAX , silicon bipolar MMIC process which uses nitride self-alignment, ion implanta-tion, and gold metallization to
achieve excellent performance,uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
MSA-0370 Absolute Maximum Ratings
Parameter
Absolute Maximum [1]
Device Current
80 mA Power Dissipation [2,3]425 mW RF Input Power
+13 dBm Junction Temperature 200°C Storage Temperature
–65 to 200°C
Thermal Resistance [2,4]:
θjc = 125°C/W
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.T CASE = 25°C.
3.Derate at 8 mW/°C for T C > 147°C.
4.The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE-MENTS section “Thermal Resistance” for more information.
G P Power Gain (|S 21|2) f = 0.1 GHz dB 11.5
12.513.5?G P Gain Flatness f = 0.1 to 1.8 GHz
dB ±0.6±1.0
f 3 dB 3 dB Bandwidth GHz
2.8Input VSWR f = 0.1 to
3.0 GHz 1.8:1Output VSWR f = 0.1 to 3.0 GHz 1.8:1
NF 50 ? Noise Figure
f = 1.0 GHz dB 6.0P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0IP 3Third Order Intercept Point f = 1.0 GHz dBm 23.0t D Group Delay f = 1.0 GHz psec 125V d Device Voltage
V 4.5
5.0 5.5
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1.The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page.
Electrical Specifications [1], T A = 25°C
Symbol
Parameters and Test Conditions: I d = 35 mA, Z O = 50 ?
Units
Min.
Typ.
Max.
VSWR
MSA-0370 Typical Scattering Parameters (Z O = 50 ?, T A = 25°C, I d = 35 mA)
Freq.GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1.13–17912.6 4.27176–18.6.1182.09–140.2.13–18012.6 4.25
171–18.3.1212.10–290.4.12–18012.5 4.21162–18.4.1214.12–520.6.11–17812.4 4.17154–18.2.1236.14–700.8.11–17412.3 4.11146–17.8.1298.17–821.0.10–16812.2 4.06137–17.7.1308.20–921.5.11–14911.7 3.85116–17.1.14011.24–1142.0.16–14711.1 3.5796–16.2.15511.27–1342.5.22–15110.3 3.2782–15.6.16714.27–1463.0.28–1609.3 2.9165–15.2.17411.27–1593.5.33–1698.2 2.5848–14.5.1887.26–1634.0.36–1777.1 2.2734–14.3.1923.25–1625.0.38163 5.1 1.819–13.8.203–5.23–1536.0.39132 3.4 1.48–14–13.5.213–13.24–160
A model for this device is available in the DEVICE MODELS section.
S 11S 21S 12 S 22Typical Performance, T A = 25°C
(unless otherwise noted)
G p (d B )
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs. Frequency, T A = 25°C, I d = 35 mA.
246810
12
14V d (V)
Figure 2. Device Current vs. Voltage.010203060
I d (m A )
2
34
5
6
1
4050
I d (mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
G p (d B )
15
25
3040
50
35
20
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.10.20.3
0.5
2.0
1.0
4.0
0.1
0.20.3
0.5
2.0
1.0
FREQUENCY (GHz)Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
03
6
9
1215
18P 1 d B (d B m )
4567
11
8
910
11
1213–55
–25
+25+85+125
P 1 d B (d B m )
N F (d B )
G p (d B )
TEMPERATURE (°C)Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, I d = 35 mA.
NF
G P
P 1 dB
70 mil Package Dimensions
1. Dimensions are in
mm