AUIRF7343QTR;AUIRF7343Q;中文规格书,Datasheet资料

?09/22/11

AUIRF7343Q

Description

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Features

l Advanced Planar Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET l Surface Mount

l Available in Tape & Reel

l 150°C Operating Temperature l Automotive [Q101] Qualified*l

Lead-Free , RoHS Compliant

Specifically designed for Automotive applications, these HEXFET ? Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

SO-8

PD - 96343B

AUTOMOTIVE MOSFET

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Ambient temperature (T A ) is 25°C, unless otherwise specified.

HEXFET ? is a registered trademark of International Rectifier.*Qualification standards can be found at https://www.360docs.net/doc/c815229220.html,/

Thermal Resistance

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AUIRF7343Q

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Repetitive rating; pulse width limited by max. junction temperature. (See fig. 22 )

Notes:

N-Channel Starting T J = 25°C, L = 6.5mH R G = 25Ω, I AS = 4.7A.

P-Channel Starting T J = 25°C, L = 20mH R G = 25Ω, I AS = -3.4A. Pulse width ≤ 300μs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 10sec.

N-Channel I SD ≤ 4.7A, di/dt ≤ 220A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C P-Channel I SD ≤ -3.4A, di/dt ≤ -150A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C

Static Electrical Characteristics @ T

= 25°C (unless otherwise stated)

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AUIRF7343Q

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Qualification Information

? Qualification standards can be found at International Rectifier’s web site: http//https://www.360docs.net/doc/c815229220.html,/?? Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.??? Highest passing voltage

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AUIRF7343Q

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Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Forward Voltage

N-Channel

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Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate Voltage

N-Channel

R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e ( Ω )

0.04

0.06

0.08

0.10

0.120

V , Gate-to-Source Voltage (V)https://www.360docs.net/doc/c815229220.html,/

AUIRF7343Q

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

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Fig 14. Typical Transfer Characteristics

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

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AUIRF7343Q

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Fig 16. Normalized On-Resistance

Vs. Temperature

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

Current

Fig 18. Typical On-Resistance Vs. Gate Voltage

P-Channel

R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e ( Ω )

0.05

0.15

0.25

0.35

0.45

-V , Gate-to-Source Voltage (V)https://www.360docs.net/doc/c815229220.html,/

AUIRF7343Q

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Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 20. Typical Capacitance Vs.Drain-to-Source Voltage

P-Channel

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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AUIRF7343Q

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at https://www.360docs.net/doc/c815229220.html,/package/

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