HMC429LP4中文资料
V C O s - S M T
15
MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz
v01.0604
General Description
Features
Functional Diagram The HMC429LP4 is a GaAs InGaP Heterojunc-tion Bipolar Transistor (H BT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer ampli? er. Covering 4.45 to 5.0 GH z, the VCO’s phase noise per-formance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.0 dBm typical from a single supply of 3.0V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package.
Pout: +4.0 dBm
Phase Noise: -105 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 30 mA
QFN Leadless SMT Package, 16 mm 2
Typical Applications
Low noise MMIC VCO w/Buffer Ampli?
er for:? 802.11a, HiperLAN WLAN ? VSA T , UNII & Microwave Radio ? T est Equipment & Industrial Controls ? Military
Electrical Speci? cations, T A = +25° C, Vcc = +3V
HMC429LP4
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V C O s - S M T
Frequency vs. Tuning Voltage, T= 25°C
Sensitivity vs. Tuning Voltage, Vcc= +3V
Typical SSB Phase Noise @ Vtune= +5V
Phase Noise vs. Tuning Voltage
Frequency vs. Tuning Voltage, Vcc= +3V Output Power vs.
Tuning Voltage, Vcc= +3V
AMPLIFIER, 4.45 - 5.0 GHz
44.14.24.34.44.54.64.74.84.955.15.20
1
2
3
4
5
6
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8
9
10
Vcc=2.75V
Vcc=3.0V Vcc=3.25V
O U T P U T F R E Q U E N C Y (G H z )
TUNING VOLTAGE (VOLTS)
44.14.24.34.44.54.64.74.84.955.15.20
1
2
3
4
5
6
7
8
9
10
+25 C +85 C -40 C
O U T P U T F R E Q U E N C Y (G H z )
TUNING VOLTAGE (VOLTS)
40
6080100120140160180200220240260280300320340+25 C +85 C -40 C
1
2
3
4
5
6
7
8910
S E N S I T I V I T Y (M H z /V O L T )
TUNING VOLTAGE (VOLTS)
12345678+25 C +85 C -40 C
1
2
3
4
5
6
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8
9
10
O U T P U T P O W E R (d B m )
TUNING VOLTAGE (VOLTS)
-120
-115-110-105-100-95
-90-85-80-75-700
1
2
3
4
5
6
7
8
9
10
S S B P H A S E N O I S E (d B c /H z )
TUNING VOLTAGE (VOLTS)
-150
-140-130-120-110-100-90-80-70-60-50-40-30-20-10010
310
4
10
5
10
6
10
7
+25 C +85 C - 40C
S S B P H A S E N O I S E (d B c /H z )
OFFSET FREQUENCY (Hz)
V C O s -
S M T
15
AMPLIFIER, 4.45 - 5.0 GHz
Absolute Maximum Ratings
Outline Drawing
Typical Supply Current vs. Vcc
Note: VCO will operate over full voltage range shown above.
NOTES:
1. MATERIAL P ACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNA TED.
2. LEAD AND GROUND P ADDLE MA TERIAL: COPPER ALLOY
3. LEAD AND GROUND P ADDLE PLA TING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULA TIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND P ADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICA TION NOTE FOR SUGGESTED PCB LAND PA
TTERN.
15
V C O s - S M T
MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz
HMC429LP4
v01.0604
Pin Descriptions
V C O s - S M T
15
AMPLIFIER, 4.45 - 5.0 GHz
The circuit board used in the ? nal application should
use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A suf? cient number of via holes should be used to con-nect the top and bottom ground planes. The evalua-tion circuit board shown is available from Hittite upon request.
Evaluation PCB
List of Materials
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V C O s - S M T
AMPLIFIER, 4.45 - 5.0 GHz
Notes: