SBT5853PT2G PDF规格书
SBT5853PT2G ■ Features
● Collector Current Capability I C =-2A ● Collector Emitter Voltage V CEO =-35V
Unit:mm
SOT-23-6()
+0.1
COLLECTOR 34
EMITTER
■ Absolute Maximum Ratings Ta = 25℃
Note.1:FR ?4 @ Minimum Pad Note.2:FR ?4 @ 1.0 X 1.0 inch Pad
PNP Transistors
SBT5853PT2G
PNP Transistors ■ Electrical Characteristics Ta = 25℃
Note.1: Pulsed Condition: Pulse Width = 300us, Duty Cycle ≤ 2%
■ Marking
■ Typical Characterisitics
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
I C , COLLECTOR CURRENT (AMPS)
0.1
0.01
I C , COLLECTOR CURRENT (AMPS)
0.001
V C E (s a t ), C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E (V O L T S )
T I O N Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Base Emitter T urn?On Voltage
versus Collector Current
Figure 6. Input Capacitance
I C , COLLECTOR CURRENT (AMPS)0
I C
, COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
V EB , EMITTER BASE VOLTAGE (VOLTS)
750550500450350300
1.5h V B E (s a t ), B A S E E M I T T E R S A T U R A T I O N
, B A S E E M I T T E R T U R N ?O N V O L T A G E (V O L T S )
V B E (o n )5.0 1.0400C i b o , I N P U T C A P A C I T A N C E (p F )
V O L T A G E (V O L T S )
700650600 3.02.0 2.5 3.5 4.0F E , D C C U R R E N T G A I N (N O R M A L I Z E D )
4.5
SBT5853PT2G PNP Transistors
.
■ Typical Characterisitics
V CE , COLLECT OR?EMITTER VOLTAGE (VOLTS)
10
I C 0.1
1.0
10100
, C O L L E C T O R C U R R E N T (A M P S )
Figure 7. Output Capacitance V CB , COLLECTOR BASE VOLTAGE (VOLTS)
2251251007525015
5.0
10
5020017515030
20
25
35
Figure 8. Safe Operating Area
C o b o , O U T P U T C A P A C I T A N C E (p F )
Figure 9. Normalized Thermal Response
t, TIME (sec)
1.0
0.001
0.01
0.11
.01
0.01
0000.01001000
0.1
0.0001
0.001
10r (t ), N O R M A L I Z E D T R A N S I E N T T H E R M A L
R E S I S T A N C E
SBT5853PT2G PNP Transistors