BT134-F中文资料

Absolute Maximum Ratings ( T J = 25°C unless otherwise specified )

Symbol

Parameter

Condition Ratings

Units

V DRM Repetitive Peak Off-State Voltage 600

V I T(RMS)R.M.S On-State Current T C = 104 °C

4A I TSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25/27A I 2t I 2t

t = 10ms

3.1A 2s P GM Peak Gate Power Dissipation 5

W P G(AV)Average Gate Power Dissipation Over any 20ms period 0.5W I GM Peak Gate Current 2A V GM Peak Gate Voltage

5V T J Operating Junction Temperature - 40 ~ 125°C T STG

Storage Temperature

- 40 ~ 150

°C

BT134-F

Nov, 2003. Rev. 0

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( I T(RMS)= 4 A )◆ High Commutation dv/dt

General Description

This device is suitable for low power AC switching applica-tion, phase control application such as fan speed and tem-perature modulation control, lighting control and static

switching relay.

2.T2

3.Gate

1.T1

Symbol

○

▼▲

1/6

SemiWell Semiconductor Bi-Directional Triode Thyristor

TO-126

Preliminary

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Electrical Characteristics

Symbol Items Conditions

Ratings

Unit Min.Typ.

Max.

I DRM Repetitive Peak Off-State

Current

V D = V DRM, Single Phase, Half Wave

T J = 125 °C──

0.5mA

V TM Peak On-State Voltage I T = 5 A, Inst. Measurement── 1.7V

I+GT1Ⅰ

Gate Trigger Current V D = 6 V, R L=10Ω──25

I -GT1Ⅱ──25 I -GT3Ⅲ──25 I+GT3Ⅳ──70

V+GT1Ⅰ

Gate Trigger Voltage V D = 6 V, R L=10Ω── 1.5

V-GT1Ⅱ── 1.5

V-GT3Ⅲ── 1.5

V+GT3Ⅳ── 2.5

V GD Non-Trigger Gate Voltage T J = 125 °C, V D = 1/2 V DRM0.2──V

(dv/dt)c Critical Rate of Rise Off-State

Voltage at Commutation

T J = 125 °C, [di/dt]c = -0.75 A/ms,

V D=2/3 V DRM

5.0──V/?

I H Holding Current─5─mA

R th(j-c)Thermal Impedance Junction to case── 3.5°C/W BT134-F

2/6ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ

BT134-F

Fig 3. On State Current vs.Fig 4. On State Current vs.

( Non-Repetitive ) Junction Temperature

4/6

BT134-F

Fig 8. Transient Thermal Impedance

Fig 7. Gate Trigger Current vs. Junction Temperature

Fig 9. Gate Trigger Characteristics Test Circuit

Test Procedure ⅠTest Procedure ⅡTest Procedure Ⅲ10?

Test Procedure Ⅳ

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Dim.

mm Inch Min.Typ.

Max.Min.Typ.Max.

A7.57.90.2950.311

B10.811.20.4250.441

C14.214.70.5590.579

D 2.7 2.90.1060.114

E 3.80.150

F 2.50.098

G 1.2 1.50.0470.059

H 2.30.091

I 4.60.181

J0.480.620.0190.024

K0.70.860.0280.034

L 1.40.055

φ 3.20.126

5/6

BT134-F TO-126 Package Dimension

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Dim.mm

Inch Min.Typ.

Max.Min.Typ.

Max.A 7.57.90.2950.311B 10.811.20.4250.441C 14.214.70.5590.579D 2.7

2.9

0.106

0.114

E 3.80.150

F 2.5

0.098

G 1.2

1.5

0.047

0.059

H 2.30.091I 4.6

0.181

J 0.480.620.0190.024K 0.7

0.86

0.028

0.034

L 1.40.055M

5.00.197φ

3.2

0.126

BT134-F

TO-126 Package Dimension, Forming

6/6

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