F-3501G中文资料
RISE3501用户手册V1[1].0
![RISE3501用户手册V1[1].0](https://img.taocdn.com/s3/m/6445d1f74693daef5ef73df6.png)
RISE3501用户手册Version 1.0JS-000326瑞斯康微电子(深圳)有限公司目录概述 (4)一、RISE3501 芯片在电力线载波传输领域的特点与应用 (5)1.1当前电力线载波的局限性 (5)1.2低压载波抄表系统自动路由及自适应技术的关键基础 (5)1.3RISE3501芯片在低压电力载波抄表系统中的优越性 (6)1.4用户平台操作的简易性 (7)1.5RISE3501在远程抄表系统中的应用 (7)二、RISE3501 内部RTC 以及WDT (9)2.1工作寄存器 (9)2.2RISE3501内部WDT介绍 (12)三、应用参考电路 (13)3.1电源配置 (13)3.2RISE3501主芯片及外围接口电路 (15)3.3载波收发电路 (16)3.4载波信号耦合电路 (17)3.5过零检测电路 (17)3.6主晶振电路 (17)3.7多功能口DOCDO/P3.7/PWM的应用 (18)四、硬件资源分配及设计 (19)4.1底层硬件资源分配 (19)4.2硬件资源使用说明 (19)4.3载波通讯模块硬件设计 (20)五、PCB布板说明 (22)5.1电源、地的走线 (22)5.2PCB板布局注意事项 (22)5.3旁路电容与去耦电容的注意事项 (23)六、性能参数指标 (24)6.1性能参数 (24)6.2抗干扰能力 (24)七、载波发送TX电路调试故障分析 (25)7.1发送电路原理说明 (25)7.2发送电路测试 (25)八、下载调试应用说明 (29)8.1在线下载（IAP_ROM）以及在线调试说明 (29)8.2Keil uVision3TM的使用介绍 (30)附录 (34)图目录图一载波抄表系统 (8)图二 RISE3501 载波模块线性电源参考方案 (13)图三 RISE3501 载波模块电源参考方案---LM2671-3.3V DC--DC转换方案 (13)图四 RISE3501 载波模块电源参考方案--- MC33063AD DC--DC转换方案 (14)图五 RISE3501 载波部分开关电源参考方案 (14)图六 RISE3501芯片载波部分外围接口参考电路 (15)图七 RISE3501 芯片引脚连接示意图 (15)图八载波发送电路 (16)图九载波接收电路 (16)图十耦合电路图 (17)图十一隔离型过零检测电路 (17)图十二各功能模块电源、地接法 (22)图十三 TX发送电路 (28)图十四 Coupling电路 (28)图十五 IAP_ROM在线下载框图 (29)图十六在线调试功能实现方法（一） (30)图十七 KeilC Debug 在线调试选项 (31)图十八新建“工程”对话框 (31)图十九 CPU类型选择对话框 (31)图二十 CPU选择对话框 (32)图二十一CPU选择确认对话框 (32)图二十二 DoCD TM配置对话框 (33)图二十三 在线调试串口选择 (33)RISE3501用户手册概述电力载波技术是一种利用电力线作为媒介传输控制信号的现代技术。
牧场物语金手指
1600蛋黄酱S型1700蛋黄酱M型1800蛋黄酱L型1900蛋黄酱G型
1A00蛋黄酱P型1B00蛋黄酱X型::
1C00牛乳S型1D00牛乳M型1E00牛乳L型1F00牛乳G型
2000牛乳P型2100牛乳X型
2200 S奶酪2300 M奶酪2400 L奶酪2500 G奶酪2600 P奶
◆优的强求：
时间：水(三)am10.00-pm5.00
地点：艾莲家
条件：主角和艾利未婚
选择：选“玩”，大家友好度增加；选“不玩”，大家友好度降低
◆艾利和优的姐弟情：
时间：水(三)am9.00-pm1.00
地点：艾莲家
条件：主角和艾利未婚
内容：优生病了，艾利让主角带他去医院，艾利好感增加，艾莲、优、多特友好度增加
草0401三色花
0501羊毛S型羊毛0601羊毛M型羊毛0701羊毛L型羊毛
0801羊毛G型羊毛
0901羊毛P型羊毛0A01羊毛X型羊毛
0B01 S型羊毛球0C01 M型羊毛球0D01 L型羊毛球0E01 G
型羊毛球
0F01 P型羊毛球1001 X型羊毛球
1101废矿石1201铜1301银1401金1501秘银1601奥
7F00生鱼片8000煮鱼8100寿司拼盘8200披萨8300 ??
8400咖喱?? 8500天妇罗
8600 ??? 8700 ??? 8800天妇罗面8900乾烧意面8A00 ??
面8B00曲奇(应该是饼乾吧)
8C00巧克力曲奇8D00天妇罗8E00冰淇淋8F00蛋糕
9000巧克力蛋糕
9100消闲茶(轻松茶) 9200土司9300法国土司9400布丁
4001 cd1 4101 cd2 4201 cd3 4301 cd4 4401 cd5 4501
管道焊接标准(中英文对照版)
装载机电子秤注意事项
装载机电子秤注意事项一、装载机电子秤的鉴定本型式评价大纲是等效采用OIML R51-1【自动分检衡器】国际建议（1996年版）制定的，并按照JJF 1002--1998【国家计量检定规程编写规则】的规定编写的。
二、引用文献OIML R51--1【自动分检衡器】国际建议，1996年版三、术语、符号、代号3.1 载机电子秤是为装载设备在装载过程中称量装载物料的一种称重计量器具。
装载机电子秤可以提供被称物料的累计值和打印清单。
四、概述装载机电子秤是一种装载机称重设备，与装载机的机械控制部分集成为一体，在装载机行进中实现称重。
它通过一个接近开关对预先拟定的称量位置的监测，将液压转换为铲斗内载荷的重量而实现称重。
它有目的模式和累加模式两种不同的工作方式，按照操作人员的选择，可以自动将载荷进行累加，或是将在和从目的设定值中扣除。
五、法制管理规定该装载机电子秤使用的计量单位应是克（g）、公斤（kg）吨（t）。
该装载机电子秤的准确度等级按生产公司的声明应达成Y（b）级秤的规定。
装载机电子秤的铭牌、面版或表头等明显部位应标注计量法制标志和计量器具标记，其标志、编号和说明必须清楚可辨，牢固可靠。
该装载机电子秤不允许使用者自行调整。
六、计量规定6.1 样机的包装、外观、铭牌、标志检查由精衡电子提供6.1.1 检查该样机的各种装置，确认其均与申请者所提供的文献资料相符。
6.1.2 铭牌上应标志产品的名称、型号规格、生产厂、出厂编号、最大称量、最小称量、分度值、准确度等级等级符号等。
6.1.3 按产品说明书的操作规定检查各个数字键、功能键及其组合应用的可靠性。
6.2 样机在正常环境条件下的技术指标6.2.1 最大称量（Max）：Max=35.0t6.2.2 分度值：e=50kg6.2.3 准确度等级：Y（b）级6.2.4 工作电源：（10V~30V）V DC6.2.4 装载量分辨率10kg、20kg、50kg、100kg、200kg、500kg；6..6 传感器工作温度：-20度~+80度6.2.7 工作温度范围：-20度~+50度二、装载机电子秤的用途和场合装载机电子秤可使装载机在装载物料的同时对物料进行自动称重。
FM350-1调试简单说明(适用于飞剪)
编者注：此文档尽对软件设置进行简单描述，目的是记录末架轧机脉冲数并带锁存功能，相关硬件知识请参照FM350-1光盘中使用手册。
建议：首先请简单阅读用户手册相关内容，再做此实验。
目录：1.1实验平台 (2)1.2准备工作 (3)1.3硬件组态 (4)1.4程序调试 (8)1.1实验平台z电源模块：307-1EA00-0AA0z CPU模块：315-2AG10-0AB0z存储卡：953-8LG10-0AA0z高速计数模块：350-1AH03-0AE0 z编码器：EB58B10-H6PR-1024z STEP7 5.4.0.0z FM350-1软件包（模块光盘中）1.2准备工作z搭建实验平台z安装软件包（先要安装STEP7）1.3硬件组态z建立一个新项目z插入一个300站z组态硬件（如图1）图1z双击FM350 COUNTER，出现COUNTER MODULE画面（图2）图2z进入Operating Modes，修改Gate的模式为Latch（图3）图3z进入Encoders，修改Signal Type为24V incremental（图4）图4z进入Input，修改Set Counter（Set DI）为Multiple，同时取消Evaluate zero mark for setting（图5）图5z进入Output，修改DO1为Active on reaching the comparison value for pulse duration(up)，把Pulse duration改为500ms（图6）图6z保存设置，编译并下载1.4程序调试z打开Libraries，选择FMx50Lib（图7）图7z复制FC2和UDT1到实验工程中（图8）图8z回到实验项目，插入DB1（图9）图9z编程注意事项¾必须要赋值的三个参数DB1.DBW6（高数模块地址），DB1.DBD8（高数模块地址首址），DB1.DBB12（高数模块地址长度）（图10）图10¾必须置位的点，FC2中的SW_GATE（允许计数），DB1.DBX27.0和DB1.DBX27.1（允许硬件I2清零），DB1.DBX28.0和DB1.DBX28.1（允许硬件Q0和Q1输出）¾FC2说明（主要参数说明）（图11）DB_NO 对应DB块的DB号，本例为1SW_GATE 软件门，为“真”的时候，允许计数L_DIRECT 软件清零L_PIRPER 设置LOAD_V AULT_CMP_V1 设置比较值1（对应DO1）T_CMP_V2 设置比较值2（对应DO2）图11¾当前值为DB1.DBD30，锁存值为DB1.DBD34（硬件I0出现上升沿，当前值就被锁存到DB1.DBD34中）（图12）图12¾设置DB1.DBD14（装载值）：在给DB1.DBD14赋值的同时，必须给FC2FM350-1调试说明（适用于飞剪系统） ＴＪ－ＢＪ自动化2室-马楠的L_PREPAR为“真”一次¾设置DB1.DBD18（比较值1）和DB1.DBD22（比较值２）：在给DB1.DBD18和DB1.DBD22赋值的同时，必须给FC2的T_CMP_V1和T_CMP_V2为“真”一次\\自动化2室-1\f\自动化2室文档\调试报告\调试报告pdf文档\ 11。
MRFG35010AR1中文资料
Gallium Arsenide PHEMTRF Power Field Effect TransistorDesigned for WiMAX, WLL/MMDS or UMTS driver and final applications.Characterized from 500 to 5000 MHz. Device is unmatched and is suitable foruse in Class AB or Class A linear base station applications.•Typical Single-Carrier W-CDMA Performance: V DD = 12 Volts, I DQ =140 mA, P out = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain —10 dBDrain Efficiency — 25%ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth•10 Watts P1dB @ 3550 MHz, CW•Excellent Phase Linearity and Group Delay Characteristics•High Gain, High Efficiency and High Linearity•RoHS Compliant•In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS15Vdc Gate-Source Voltage V GS-5Vdc RF Input Power P in33dBm Storage Temperature Range T stg-65 to +175°C Channel Temperature (1)T ch175°C Operating Case Temperature Range T C-40 to +90°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 81°C, 10 W CW Class ABCase Temperature 79°C, 1 W CW Class ARθJC4.04.1°C/W1.For reliable operation, the operating channel temperature should not exceed 150°C.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf.Select Documentation/Application Notes - AN1955.Document Number: MRFG35010ARev. 1, 6/2006 Freescale SemiconductorTechnical Data3.5 GHz, 10 W, 12 VPOWER FETGaAs PHEMTMRFG35010AR12RF Device DataFreescale SemiconductorMRFG35010AR1Table 3. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Saturated Drain Current(V DS = 3.5 Vdc, V GS = 0 Vdc)I DSS — 2.9—Adc Off State Leakage Current(V GS = -0.4 Vdc, V DS = 0 Vdc)I GSS —< 1100μAdc Off State Drain Current(V DS = 12 Vdc, V GS = -2.2 Vdc)I DSO —0.091mAdc Off State Current(V DS = 28.5 Vdc, V GS = -2.5 Vdc)I DSX —515mAdc Gate-Source Cut-off Voltage (V DS = 3.5 Vdc, I DS = 15 mA)V GS(th)-1.2-0.8-0.7Vdc Quiescent Gate Voltage(V DS = 12 Vdc, I D = 180 mA)V GS(Q)-1.2-0.8-0.7VdcFunctional Tests (In Freescale Test Fixture, 50 ohm system) (1) V DD = 12 Vdc, I DQ = 140 mA, P out = 1 W Avg., f = 3550 MHz,Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR =8.5 dB @ 0.01% Probability on CCDF.Power Gain G ps 910—dB Drain Efficiencyh D 2325—%Adjacent Channel Power RatioACPR —-43-40dBc Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V DD = 12 Vdc, I DQ = 140 mA, f = 3550 MHzOutput Power, 1 dB Compression Point, CW P1dB—10—W1.Measurements made with device in test fixture.MRFG35010AR13RF Device DataFreescale SemiconductorFigure 1. 3.5 GHz Test Circuit SchematicZ9, Z100.290″ x 90°Microstrip Radial Stub Z120.184″ x 0.390″Microstrip Z130.040″ x 0.580″Microstrip Z140.109″ x 0.099″Microstrip Z150.030″ x 0.225″Microstrip Z160.080″ x 0.240″Microstrip Z170.044″ x 0.143″Microstrip PCBRogers 4350, 0.020″, εr = 3.5Z10.044″ x 0.250″Microstrip Z20.044″ x 0.030″Microstrip Z30.615″ x 0.050″Microstrip Z40.044″ x 0.070″Microstrip Z50.270″ x 0.490″ Microstrip Z60.044″ x 0.470″Microstrip Z70.434″ x 0.110″Microstrip Z8, Z110.015″ x 0.527″MicrostripTable 4. 3.5 GHz Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C1, C17 6.8 pF Chip Capacitors 100A6R81BW150XT ATC C2, C1610 pF Chip Capacitors 100A100JW150XT ATC C3, C15100 pF Chip Capacitors 100A101JW150XT ATC C4, C13, C14100 pF Chip Capacitors 100B101JW500XT ATC C5, C121000 pF Chip Capacitors 100B102JW500XT ATC C6, C110.1 μF Chip Capacitors 200B104KW50XT ATC C7, C1039K Chip Capacitors 200B393KW50XT ATC C8, C910 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R250 Ω Chip ResistorsP51ETR -NDNewark4RF Device Data Freescale SemiconductorMRFG35010AR1Figure 2. 3.5 GHz Test Circuit Component LayoutMRFG35010AR15RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSηD , D R A I N E F F I C I E N C Y (%)G T , T R A N S D U C E R G A I N (d B )214060108406304201040−60−1015−250P out , OUTPUT POWER (dBm)Figure 4. Single-Carrier W-CDMA ACPR and Input Return Loss versus Output PowerA C P R , A D J A C E N T C H A N N E L P O W E R R A T I O (dB c )I N P U T R E T U R N L O S S (d B )I R L ,−5−20−30−40−1520−10253035NOTE:All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.All data is generated from load pull, not from the test circuit shown.−50−2012506RF Device Data Freescale SemiconductorMRFG35010AR1TYPICAL CHARACTERISTICSNOTE:Data is generated from the test circuit shown.ηD,DRAINEFFICIENCY(%) Gps,POWERGAIN(dB)2146040 121082030 610 45040−60−2020−30−10P out, OUTPUT POWER (dBm)Figure 6. Single-Carrier W-CDMA ACPR andInput Return Loss versus Output PowerACPR,ADJACENTCHANNELPOWERRATIO(dBc)INPUTRETURNLOSS(dB)IRL,−30−40−50−15242832−20−2536MRFG35010AR17RF Device DataFreescale SemiconductorZ o = 25 ΩZ loadZ sourcef = 3550 MHzf = 3550 MHzV DD = 12 Vdc, I DQ = 140 mA, P out = 1 W Avg.f MHz Z sourceW Z load W 35504.6 - j18.74.9 - j9.8Z source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measuredfrom drain to ground.ZsourceZloadOutput Matching NetworkFigure 7. Series Equivalent Source and Load Impedance8RF Device DataFreescale SemiconductorMRFG35010AR1Table 5. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 1000 mA, T C = 25°C, 50 ohm system)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ0.250.959-171.49.86789.90.008316.60.784-178.90.300.959-173.78.22087.60.008618.30.784-179.60.350.956-175.67.05585.60.008319.50.784179.70.400.959-177.2 6.19283.80.008820.00.783179.20.450.959-178.5 5.50982.20.008922.40.782178.70.500.959-179.6 4.96980.60.008922.70.781178.20.550.959179.3 4.52579.00.009123.90.781177.80.600.959178.4 4.15777.60.009426.00.780177.40.650.958177.5 3.84476.20.009526.90.779177.00.700.958176.7 3.57874.80.009828.00.779176.70.750.958175.8 3.34773.40.009929.20.778176.30.800.958175.1 3.14772.00.010330.60.777176.00.850.958174.3 2.97170.70.010731.60.776175.60.900.957173.5 2.81469.40.010832.00.776175.30.950.957172.9 2.67568.10.011133.00.775174.91.000.957172.2 2.55166.80.011433.80.774174.61.050.958171.5 2.43965.40.011734.10.774174.31.100.956170.9 2.33664.20.011934.70.773173.91.150.956170.1 2.24462.80.012435.50.773173.61.200.956169.5 2.15961.60.012635.30.772173.21.250.955168.8 2.08360.30.012935.90.772173.01.300.955168.1 2.01359.00.013336.10.772172.61.350.955167.5 1.94857.70.013636.70.771172.31.400.954166.8 1.88856.50.013936.90.771171.91.450.954166.2 1.83255.20.014337.40.770171.71.500.953165.5 1.77953.90.014737.80.770171.41.550.953164.8 1.73052.60.015137.40.769171.11.600.952164.1 1.68351.30.015438.10.769170.91.650.953163.2 1.64150.10.015837.70.769170.61.700.952162.6 1.59848.90.016137.80.769170.51.750.951161.8 1.55947.60.016437.90.769170.31.800.952161.0 1.51746.40.016737.90.769170.31.850.948161.6 1.54944.60.017837.50.760167.31.900.947160.9 1.52143.30.018337.30.759166.81.950.947160.3 1.49442.00.018937.20.757166.42.000.945159.5 1.47040.70.019437.20.756165.92.050.945158.9 1.44739.40.019836.90.754165.62.100.945158.1 1.42638.00.020436.40.754165.12.150.944157.5 1.40736.70.020936.40.752164.72.200.943156.8 1.38935.40.021536.00.751164.22.250.942156.0 1.37134.00.022035.90.749163.82.300.941155.2 1.35532.70.022635.50.749163.22.350.939154.6 1.34131.30.023434.90.745162.92.400.939153.8 1.32829.90.023834.20.744162.52.450.937153.01.31628.60.024534.30.742162.1MRFG35010AR19RF Device DataFreescale SemiconductorTable 5. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 1000 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ2.500.936152.2 1.30527.20.025033.80.740161.62.550.935151.4 1.29625.80.025833.40.738161.12.600.933150.5 1.28724.40.026432.70.737160.72.650.933149.8 1.27923.00.027332.10.736160.12.700.930149.0 1.27221.60.028031.70.733159.72.750.929148.1 1.26620.10.028831.50.730159.22.800.926147.2 1.26118.70.029730.60.728158.72.850.925146.3 1.25717.20.030629.90.725158.22.900.924145.3 1.25415.70.031429.20.722157.72.950.921144.4 1.25114.20.032428.60.720157.23.000.919143.5 1.24912.70.033327.80.717156.73.050.916142.5 1.24911.20.034327.10.715156.03.100.915141.4 1.2479.70.035526.30.710155.73.150.912140.5 1.2498.10.036625.30.708155.03.200.908139.4 1.250 6.50.037724.70.705154.53.250.905138.3 1.252 4.90.039023.40.701153.93.300.903137.1 1.256 3.30.040022.20.698153.43.350.899136.0 1.260 1.60.041320.80.694152.83.400.896134.8 1.265-0.10.042220.00.690152.23.450.893133.6 1.271-1.80.043419.50.686151.63.500.890132.3 1.278-3.50.045018.40.682151.03.550.885131.0 1.284-5.30.046417.30.678150.43.600.881129.6 1.292-7.10.047816.30.673149.83.650.876128.1 1.301-9.00.049415.10.668149.23.700.872126.7 1.311-10.80.051014.10.664148.63.750.871125.1 1.322-12.70.053013.00.661147.83.800.862123.7 1.333-14.70.054311.30.652147.33.850.856122.0 1.346-16.60.056310.30.648146.73.900.850120.3 1.360-18.60.05839.10.642146.03.950.845118.6 1.375-20.70.06057.40.636145.54.000.838116.7 1.389-22.90.0624 6.20.631144.84.050.831114.8 1.405-25.00.0646 4.60.624144.14.100.822112.9 1.422-27.30.0671 3.00.617143.54.150.816110.8 1.441-29.60.0696 1.30.612142.74.200.808108.6 1.460-31.90.0721-0.40.605142.14.250.801106.4 1.480-34.40.0747-2.20.599141.54.300.792104.1 1.500-36.90.0774-4.00.591140.74.350.783101.6 1.523-39.40.0804-6.10.582140.14.400.77599.0 1.545-42.10.0832-8.10.576139.54.450.76596.2 1.567-44.80.0861-10.30.569138.84.500.75493.3 1.590-47.70.0894-12.40.561138.14.550.74390.2 1.611-50.50.0924-14.80.555137.54.600.73187.0 1.634-53.50.0955-17.00.547136.84.650.71883.81.659-56.50.0989-19.50.541136.110RF Device DataFreescale SemiconductorMRFG35010AR1Table 5. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 1000 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ4.700.70680.3 1.683-59.60.1025-21.90.534135.44.750.69376.6 1.706-62.70.1061-24.50.526134.64.800.68072.8 1.729-66.00.1097-27.20.519133.94.850.66768.8 1.752-69.40.1136-30.00.512133.04.900.65564.6 1.775-72.80.1175-32.80.504132.14.950.64260.1 1.797-76.30.1214-35.80.496131.35.000.63055.5 1.819-79.90.1254-39.00.489130.35.050.61850.6 1.839-83.60.1294-42.20.481129.25.100.60845.5 1.859-87.40.1335-45.50.474128.15.150.59840.2 1.878-91.20.1377-49.10.467126.75.200.59134.5 1.896-95.20.1412-52.70.459125.15.250.58328.8 1.910-99.30.1451-56.20.450123.65.300.57922.7 1.924-103.40.1488-60.10.441121.75.350.57616.5 1.937-107.70.1526-63.90.431119.65.400.57610.1 1.947-112.00.1561-67.90.421117.25.450.576 3.5 1.952-116.50.1594-72.00.410114.65.500.580-3.2 1.957-121.20.1627-76.30.397111.45.550.585-9.7 1.953-125.80.1651-80.60.383108.15.600.592-16.2 1.943-130.50.1675-85.00.368104.25.650.601-22.7 1.929-135.30.1691-89.50.35099.85.700.613-28.8 1.913-139.90.1707-93.80.33195.15.750.627-34.6 1.900-144.60.1724-98.20.31289.65.800.646-40.5 1.885-149.50.1739-102.80.29283.25.850.667-46.4 1.864-154.60.1749-107.50.27275.65.900.688-52.2 1.834-159.80.1753-112.40.25166.65.950.708-57.7 1.800-164.90.1750-117.30.23256.06.000.730-63.0 1.760-170.10.1740-122.20.21543.86.050.751-68.2 1.716-175.20.1728-127.10.20429.66.100.772-73.1 1.668179.70.1709-132.10.20014.16.150.793-77.7 1.617174.60.1685-136.90.204-1.86.200.812-82.3 1.561169.60.1654-141.90.218-16.76.250.831-86.6 1.504164.60.1620-146.80.240-30.56.300.850-90.8 1.445159.60.1584-151.50.268-42.56.350.866-94.8 1.385154.70.1542-156.40.299-52.66.400.881-98.7 1.323150.00.1498-161.00.335-61.56.450.896-102.3 1.261145.30.1447-165.40.371-69.36.500.908-105.9 1.199140.70.1399-169.70.407-76.16.550.920-109.2 1.138136.30.1351-173.90.444-82.46.600.930-112.4 1.077132.00.1303-178.10.479-88.06.650.938-115.4 1.018127.80.1254177.80.513-93.16.700.946-118.30.961123.80.1202173.90.547-97.96.750.953-121.00.906119.80.1153170.00.579-102.36.800.959-123.70.853116.00.1103166.40.608-106.46.850.967-126.40.802112.20.1056162.80.637-110.2MRFG35010AR111RF Device DataFreescale SemiconductorTable 5. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 1000 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ6.900.969-128.80.752108.70.1006159.30.662-113.96.950.971-131.20.704105.40.0959156.20.686-117.27.000.972-133.40.660102.30.0915153.20.709-120.47.050.973-135.40.62099.40.0874150.30.729-123.37.100.974-137.30.58296.50.0834147.60.749-126.07.150.974-139.20.54793.70.0795145.00.769-128.77.200.975-140.90.51391.00.0760142.40.786-131.37.250.976-142.60.48288.40.0726140.00.802-133.77.300.976-144.30.45385.90.0694137.70.817-136.07.350.977-145.80.42683.50.0665135.20.830-138.27.400.978-147.30.40081.10.0633133.00.843-140.27.450.977-148.80.37678.90.0605131.00.856-142.27.500.975-150.00.35476.80.0577129.40.866-144.17.550.975-151.40.33274.80.0553127.80.878-146.07.600.975-152.60.31372.90.0531125.90.888-147.87.650.974-153.70.29571.10.0511124.20.897-149.67.700.976-154.70.27869.40.0492123.00.906-151.27.750.979-155.70.26367.70.0475121.10.913-152.87.800.983-156.80.24966.00.0459119.00.918-154.47.850.986-158.00.23564.30.0438117.20.925-155.87.900.986-159.10.22262.70.0421115.60.931-157.17.950.984-160.20.21061.00.0404113.50.937-158.48.000.983-161.20.19959.40.0387111.80.944-159.712RF Device DataFreescale SemiconductorMRFG35010AR1Table 6. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 140 mA, T C = 25°C, 50 ohm system)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ0.250.937-166.58.88291.60.01679.90.755-175.60.300.936-169.57.41489.00.01668.80.757-176.80.350.934-171.9 6.37386.60.01688.10.760-177.80.400.937-173.9 5.59884.70.01707.70.760-178.50.450.937-175.5 4.98382.80.01707.70.760-179.20.500.936-176.9 4.49781.00.01697.60.761-179.80.550.937-178.2 4.09879.30.01727.70.761179.70.600.936-179.2 3.76577.70.01718.00.761179.20.650.936179.7 3.48176.10.01727.70.761178.70.700.936178.8 3.24174.60.01748.00.762178.30.750.936177.9 3.03173.10.01737.90.762177.90.800.936177.0 2.84971.60.01748.00.761177.50.850.936176.2 2.69070.20.01768.60.761177.20.900.935175.4 2.54868.70.01778.70.762176.90.950.936174.7 2.42067.30.01778.90.761176.51.000.935173.9 2.30765.90.01799.10.761176.11.050.936173.2 2.20664.50.01819.10.761175.81.100.934172.6 2.11163.10.01819.10.761175.51.150.934171.8 2.02861.70.01839.40.761175.11.200.934171.1 1.94960.30.01849.10.761174.81.250.934170.4 1.87959.00.01869.40.762174.51.300.934169.7 1.81457.60.01879.60.761174.11.350.933169.1 1.75556.20.01889.70.762173.81.400.933168.4 1.70054.90.01899.80.762173.51.450.933167.7 1.64753.50.019210.00.762173.21.500.932167.1 1.59852.20.019410.20.761172.91.550.932166.4 1.55450.80.019510.00.761172.71.600.932165.7 1.51049.50.019610.20.761172.51.650.932164.8 1.47248.10.019810.20.762172.21.700.931164.1 1.43246.80.019910.20.762172.11.750.931163.4 1.39545.50.020110.30.763171.91.800.931162.6 1.35744.30.020210.40.763171.91.850.927163.2 1.38342.50.021210.00.755169.01.900.926162.6 1.35741.20.021510.00.754168.51.950.926162.0 1.33239.80.021610.20.753168.12.000.925161.2 1.30938.40.022110.20.752167.72.050.925160.6 1.28737.10.022410.00.752167.32.100.924159.9 1.26735.70.022610.00.751166.92.150.923159.3 1.25034.40.023010.00.751166.52.200.923158.6 1.23233.00.02349.80.750166.02.250.922157.9 1.21531.60.02369.90.749165.62.300.921157.1 1.20030.20.02419.60.749165.02.350.919156.5 1.18628.90.02469.30.746164.72.400.919155.7 1.17327.50.02499.10.746164.32.450.917154.91.16226.10.02549.30.744163.9MRFG35010AR113RF Device DataFreescale SemiconductorTable 6. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 140 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ2.500.917154.2 1.15124.70.02568.80.743163.42.550.916153.5 1.14123.30.02628.80.742163.02.600.914152.6 1.13221.90.02678.60.741162.62.650.914151.9 1.12420.40.02728.20.740162.02.700.911151.1 1.11619.00.02778.00.739161.62.750.910150.3 1.11117.60.02828.10.736161.02.800.908149.5 1.10416.10.02907.70.735160.62.850.907148.6 1.10014.70.02967.30.733160.12.900.906147.7 1.09613.20.03027.10.731159.52.950.903146.8 1.09211.70.0310 6.60.729159.03.000.901145.9 1.08910.20.0317 6.40.727158.53.050.899145.0 1.0888.70.0324 5.80.725157.93.100.898143.9 1.0857.20.0333 5.30.722157.63.150.895143.1 1.086 5.60.0340 4.90.721156.83.200.892142.0 1.086 4.10.0350 4.50.719156.33.250.889141.0 1.087 2.50.0361 3.80.716155.83.300.887139.9 1.0890.90.0371 2.70.713155.23.350.884138.9 1.092-0.70.0379 1.90.711154.63.400.881137.8 1.095-2.40.03860.90.708154.03.450.879136.6 1.099-4.00.03940.90.705153.43.500.876135.4 1.104-5.70.04060.30.702152.83.550.872134.1 1.109-7.40.0418-0.60.698152.23.600.868132.8 1.115-9.20.0429-1.40.695151.53.650.864131.5 1.121-11.00.0440-2.20.691150.93.700.860130.1 1.129-12.70.0452-2.90.688150.23.750.860128.6 1.138-14.60.0468-3.60.686149.53.800.852127.3 1.147-16.50.0480-5.00.679148.93.850.846125.7 1.157-18.40.0494-5.80.675148.23.900.841124.2 1.168-20.30.0509-6.40.670147.53.950.837122.6 1.181-22.30.0528-7.80.666146.84.000.830120.8 1.192-24.30.0543-8.70.661146.14.050.825119.0 1.206-26.40.0560-9.90.656145.34.100.817117.3 1.220-28.50.0580-11.00.650144.74.150.812115.3 1.236-30.70.0600-12.20.646143.84.200.805113.3 1.252-33.00.0621-13.50.641143.04.250.799111.3 1.270-35.20.0643-15.00.635142.24.300.791109.0 1.288-37.70.0665-16.60.628141.34.350.783106.7 1.308-40.10.0690-18.10.621140.64.400.777104.3 1.328-42.60.0714-19.80.615139.84.450.769101.7 1.347-45.20.0739-21.50.609138.94.500.75998.9 1.370-47.90.0766-23.40.602138.14.550.74996.0 1.390-50.60.0792-25.30.596137.24.600.73893.1 1.412-53.50.0819-27.30.589136.34.650.72790.11.436-56.40.0849-29.50.583135.314RF Device DataFreescale SemiconductorMRFG35010AR1Table 6. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 140 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ4.700.71786.7 1.459-59.30.0880-31.60.576134.44.750.70583.2 1.482-62.40.0913-33.80.568133.44.800.69379.6 1.505-65.60.0945-36.10.560132.34.850.68275.8 1.530-68.80.0977-38.60.553131.24.900.67071.7 1.554-72.20.1016-41.20.544130.04.950.65867.4 1.578-75.60.1051-43.80.536128.95.000.64762.9 1.602-79.20.1089-46.60.527127.65.050.63658.1 1.626-82.80.1127-49.60.519126.25.100.62553.1 1.649-86.60.1167-52.70.510124.85.150.61547.9 1.672-90.40.1207-56.10.502123.15.200.60742.3 1.694-94.40.1244-59.50.492121.35.250.59936.5 1.713-98.50.1281-62.90.482119.45.300.59430.4 1.731-102.70.1319-66.60.471117.25.350.59024.0 1.750-107.00.1357-70.30.460114.95.400.58917.5 1.764-111.40.1392-74.20.449112.35.450.58810.7 1.776-116.00.1428-78.20.436109.45.500.590 3.7 1.785-120.80.1461-82.60.423106.05.550.593-3.2 1.787-125.60.1488-86.70.407102.45.600.598-10.1 1.784-130.40.1514-91.00.39298.25.650.605-17.0 1.777-135.30.1533-95.60.37393.65.700.616-23.5 1.767-140.20.1551-100.00.35488.45.750.629-29.8 1.757-145.10.1571-104.50.33482.75.800.648-36.1 1.744-150.30.1584-109.10.31476.05.850.668-42.5 1.724-155.60.1596-113.90.29468.35.900.687-48.8 1.697-160.90.1599-118.70.27559.45.950.706-54.8 1.664-166.20.1597-123.70.25749.16.000.726-60.5 1.627-171.50.1589-128.50.24337.56.050.746-66.1 1.587-176.80.1578-133.40.23424.56.100.766-71.3 1.542178.00.1562-138.30.23110.56.150.785-76.3 1.494172.80.1542-143.20.236-3.76.200.803-81.1 1.441167.60.1515-148.10.249-17.16.250.820-85.6 1.388162.40.1484-153.00.269-29.96.300.838-90.0 1.332157.30.1450-157.80.293-41.16.350.853-94.2 1.274152.30.1410-162.50.322-51.06.400.867-98.2 1.216147.50.1368-167.00.355-59.86.450.880-102.0 1.157142.70.1323-171.30.388-67.76.500.892-105.6 1.099138.00.1280-175.60.423-74.66.550.902-109.0 1.041133.50.1236-179.70.457-81.06.600.911-112.20.985129.20.1193176.30.490-86.76.650.918-115.30.929125.00.1149172.10.523-91.96.700.926-118.20.876120.90.1102168.30.555-96.86.750.933-121.00.825116.90.1058164.60.585-101.46.800.938-123.70.777112.90.1012161.00.613-105.66.850.946-126.30.729109.20.0968157.40.641-109.5MRFG35010AR115RF Device DataFreescale SemiconductorTable 6. Class AB Common Source S-Parameters (V DD = 12 Vdc, I DQ = 140 mA, T C = 25°C, 50 ohm system)(continued)f S 11S 21S 12S 22GHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ6.900.948-128.80.684105.60.0930154.10.665-113.36.950.950-131.10.638102.30.0882151.30.688-116.77.000.952-133.30.59899.20.0843148.50.711-119.97.050.953-135.30.56196.20.0805145.70.730-122.87.100.953-137.20.52693.30.0771142.90.750-125.67.150.954-139.10.49390.40.0738140.20.770-128.37.200.956-140.80.46287.70.0701137.80.786-131.07.250.957-142.40.43485.10.0672135.50.802-133.47.300.958-144.10.40782.70.0645133.40.817-135.77.350.959-145.50.38280.30.0617130.80.831-138.07.400.961-147.00.35977.90.0589128.70.843-140.07.450.961-148.50.33775.70.0561126.60.855-141.97.500.959-149.80.31673.60.0535125.10.865-143.87.550.960-151.10.29771.60.0515123.70.877-145.87.600.960-152.30.27969.80.0496122.10.887-147.67.650.960-153.40.26367.90.0476120.30.895-149.47.700.962-154.40.24766.30.0459118.90.905-151.07.750.967-155.40.23464.80.0446117.20.912-152.67.800.970-156.60.22163.00.0430115.20.917-154.27.850.974-157.80.20961.40.0414113.50.923-155.67.900.975-158.90.19859.70.0397111.30.928-156.97.950.973-159.90.18658.00.0379109.50.934-158.38.000.973-161.00.17656.50.0360108.70.941-159.516RF Device Data Freescale SemiconductorMRFG35010AR1NOTESMRFG35010AR117RF Device DataFreescale SemiconductorNOTES18RF Device Data Freescale SemiconductorMRFG35010AR1NOTESMRFG35010AR119RF Device DataFreescale SemiconductorPACKAGE DIMENSIONSCASE 360D-02ISSUE CNI-360HFInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners.© Freescale Semiconductor, Inc. 2006. All rights reserved.How to Reach Us:Home Page:E-mail:support@USA/Europe or Locations Not Listed:Freescale SemiconductorTechnical Information Center, CH3701300 N. Alma School RoadChandler, Arizona 85224+1-800-521-6274 or +1-480-768-2130support@Europe, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen, Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)support@Japan:Freescale Semiconductor Japan Ltd.HeadquartersARCO Tower 15F1-8-1, Shimo-Meguro, Meguro-ku,Tokyo 153-0064Japan0120 191014 or +81 3 5437 9125support.japan@Asia/Pacific:Freescale Semiconductor Hong Kong Ltd.Technical Information Center2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong+800 2666 8080@For Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-441-2447 or 303-675-2140Fax: 303-675-2150LDCForFreescaleSemiconductor@。
供应商中英文
Vendor Name
ANSON SOLDER&TIN PRODUCTS MADE LTD -
佛山市南海区大沥安臣锡品制造
KWSA3364
有限公司
BESTONE ELECTRONICS INDUSTRIAL CO., LTD. -
KWSS0070
深圳佳音电声实业有限公司
BOLUO FORD GLORY ELECTRONIC COMPONENTS CO.,
KWSZ3327
浙江泰康电子有限公司
RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB RMB
KWSZ3290
NANHAI SHI DA LI ZHENG YI BIAO PAI CHANG -
KWSN3405
佛山市南海大沥正一标牌厂
SANQIANG ELECTRONICS（SHENZHEN）CO.,LTD - 慧华新三强电子（深圳）有限公
TVS0019
司
SHANGHAI JINXIN ELECTRONICS LTD. - TWSS3016 上海金鑫电子有限公司
SHANGHAI PUDONG MEILING PLASTICS FACTORY -
TVS0021
上海浦东美灵塑料制品厂
SHANGHAI TONG HENG TRADING CO.,LTD. - S0103 上海同衡贸易有限公司
SHENZHEN COLINDA PLASTIC & ELECTIC CO LTD -
FOSHAN HONGXU PLASTIC INDUSTRY CO., LTD -
3501-2021标准分享
2021年最新3501标准全面解读与分享随着科技的飞速发展和市场需求的不断变化，各行各业的标准也在不断更新和完善。
本文将为您详细解读2021年最新版的3501标准，帮助您更好地了解和应用这一重要标准。
一、3501标准概述3501标准，全称为《信息与通信技术（ICT）设备节能技术要求》，是我国在节能减排领域的一项重要标准。
该标准主要针对ICT设备，包括服务器、存储设备、网络设备、安全设备等，对其节能性能提出了一系列具体要求。
3501标准的制定旨在推动ICT产业的绿色发展，降低能源消耗，减少碳排放。
二、2021年版3501标准的主要变化1.扩展适用范围：2021年版3501标准在原有基础上，将适用范围扩展到更多的ICT设备，如云计算、大数据、物联网等新兴领域。
2.强化节能要求：针对不同类型的ICT设备，2021年版3501标准提高了节能指标，加大了节能减排力度。
例如，服务器电源效率要求从80%提高到85%，存储设备能耗密度要求降低10%等。
3.新增能效等级：2021年版3501标准引入了能效等级的概念，将ICT设备分为五个能效等级，以便于企业和个人更加直观地选择高效节能的产品。
4.完善检测方法：为进一步保证3501标准的实施效果，2021年版标准对检测方法进行了细化和优化，增加了现场检测、远程检测等多种检测手段。
三、3501标准在实际应用中的意义1.降低运营成本：遵循3501标准，选购节能型ICT设备，有助于降低企业运营成本，提高经济效益。
2.提升竞争力：符合3501标准的产品，代表着更高的能效和更环保的生产理念，有助于提升企业竞争力。
3.促进产业升级：3501标准的推广和实施，将推动ICT产业向绿色、低碳、高效方向发展，助力我国产业结构优化。
4.贯彻国家政策：遵循3501标准，是贯彻国家绿色发展理念、落实节能减排政策的具体举措。
总的来说，2021年最新版3501标准的发布实施，标志着我国ICT产业节能减排工作进入新阶段。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
For other values & Custom Designs, contact factory.
Specifications subject to change without notice.
15801 Chemical Lane, Huntington Beach, CA 92649-1595
Tel: (714) 898-0960 • Fax: (714) 896-0971
Rhombus
Industries Inc.
TAXFILT2 - 10/98
20
Attenuates 12 or 16 kHz signals to telco equipment by more than 25 e two F-3501 inductors, one in a parallel LC configuration followed by one in a series configuration, to provide more than 40 dB attenuation of tax pulse signals.
Electrical Specifications at 25O C Inductance D.C. Resistance
D.C. Current
Dielectric P/N F-3501+5%Max.Max.Min.Attenuates Section (Pins)
(mH)
(Ω)
(mA)
(VAC)
12kHz or 16 kHz
L1 (1-2) 1.44 2.30901250 16 kHz, Parallel L1 with C=68 nF L2 (1-6) 2.58 3.25701250 12 kHz, Parallel L2 with C=68 nF L3 (1-5) 4.52 6.3590125016 kHz, Series L3 with C=22 nF L4 (1-4)
7.96
10.7
70
1250
12 kHz, Series L4 with C=22 nF
12 or 16 kHz Tax Pulse Filter
P/N F-3501Thru-hole Package
.394(10.00)MAX.
.375(9.53)MAX.
.110(2.79)MIN.
.080(2.03)
.039
(0.99)
.098(2.49)
.024(0.61)
.465(11.81)MAX.
Bottom View
123
654
Schematic Diagram for P/N F-3501
12654
L1
L4
L3
L2 1. Tested at 10KHz and 100 mV RMS
}
Optional use as Dual
.370(9.40) MAX.
.098(2.50)
.028(0.70)
.375(9.53) MAX.
.34(8.6)
.505 (12.83).490 (12.45)
.375(9.53) MAX.
.025(0.64)
Surface Mount
version Available on Tape & Reel
P/N F-3501G
Surface Mount Package
Suggested Pad Layout
.075 (1.905)TYP.
.100 (2.54)TYP..525(13.34)
.050 (1.27)TYP.
1
23
4
56
For other values & Custom Designs, contact factory.
Specifications subject to change without notice.
15801 Chemical Lane, Huntington Beach, CA 92649-1595
Tel: (714) 898-0960 • Fax: (714) 896-0971
Rhombus
Industries Inc.
TAXFILT2 - 10/98
12 or 16 kHz Tax Pulse Filter
21
P/N F-3504G
EFD-15 Surface Mount
Package
.147(3.75)TYP.
.120(3.05)MIN.
.307(7.80)Pin Diameter is 0.024 (0.6)
.540(13.75)
.590(15.19).590(15.19)
1
Bottom View
2
3
4
8765
}
Optional use as Dual
P/N F-3504GCP EFD-15 Surface Mount with Pick-&-Place Cap
.335(8.50)MAX.
.685(17.4)MAX.
.098(2.5)
.028(0.7)
.016(0.4)
.850 (21.6)
1
5
10
6
.709 (18.0).700(17.8)MAX.
.330(8.38)MAX.
.620(15.75)MAX.
.098(2.5)
.028(0.7)
.016(0.4)
.850 (21.6)
1
5
10
6
.709 (18.0)
.620(15.75)MAX.
Physical Dimensions in Inches (mm)
L1
L4
L3L2136
810Schematic Diagram P/N F-3504
Attenuates 12 or 16 kHz signals to telco equipment by more than 25 e two F-3504 inductors, one in a parallel LC configuration followed by one in a series configuration, to provide more than 40 dB attenuation of tax pulse signals.
87
6
.098 (2.5) TYP..876(22.25)
.045 (1.14) TYP.
.088 (2.24)TYP.
Suggested Pad Layout
12
3
45
910EFD-15 SMD
Electrical Specifications at 25O C Inductance D.C. Resistance
D.C. Current
Dielectric P/N F-3504+5%Max.Max.Min.Attenuates Section (Pins)
(mH)
(Ω)
(mA)
(VAC)
12kHz or 16 kHz
L1 (1-3) 1.44 2.30901250 16 kHz, Parallel L1 with C=68 nF L2 (1-10) 2.58 3.25701250 12 kHz, Parallel L2 with C=68 nF L3 (1-8) 4.52 6.3590125016 kHz, Series L3 with C=22 nF L4 (1-6)
7.96
10.7
70
1250
12 kHz, Series L4 with C=22 nF
1. Tested at 10KHz and 100 mV RMS
P/N F-3504
EFD-15 Thru-hole Package。