IPB15N03L中文资料

IPB15N03LOpti MOS ® Buck converter seriesProduct Summary V DS30V R DS(on) max. SMD version 12.6m ΩID42AFeature• N-Channel• Logic Level• Low On-Resistance R DS(on)• Excellent Gate Charge x R DS(on) product (FOM)• Superior thermal resistance• 175°C operating temperature • Avalanche rated • d v /d t rated• Ideal for fast switching buck convertersP- TO263 -3-2P- TO220 -3-1Marking 15N03L 15N03LType Package Ordering Code IPP15N03L P- TO220 -3-1Q67042-S4039IPB15N03L P- TO263 -3-2Q67040-S4344Maximum Ratings , at T j = 25 °C, unless otherwise specifiedParameterSymbol Value Unit Continuous drain current 1)T C =25°CI D4242APulsed drain currentT C =25°CI D puls 168Avalanche energy, single pulseI D =20A, V DD =25V, R GS =25ΩE AS 20mJRepetitive avalanche energy, limited by T jmax 2)E AR 8Reverse diode d v /d tI S =42A, V DS =-V, d i /d t =200A/µs, T jmax =175°Cd v /d t 6kV/µs Gate source voltage V GS ±20V Power dissipationT C =25°CP tot 83W Operating and storage temperature T j , T stg-55... +175°C IEC climatic category; DIN IEC 68-155/175/56IPB15N03LThermal Characteristics Parameter SymbolValues Unitmin.typ.max.CharacteristicsThermal resistance, junction - case R thJC - 1.2 1.8K/WSMD version, device on PCB:@ min. footprint @ 6 cm 2 cooling area 3)R thJA---- 6240Electrical Characteristics , at T j = 25 °C, unless otherwise specified ParameterSymbolValues Unitmin.typ.max.Static CharacteristicsDrain-source breakdown voltageV GS =0V, I D =1mAV (BR)DSS 30--VGate threshold voltage, V GS = V DSI D =40µAV GS(th) 1.2 1.62Zero gate voltage drain currentV DS =30V, V GS =0V, T j =25°C V DS =30V, V GS =0V, T j =125°CI DSS-- 0.0110 1100µAGate-source leakage currentV GS =20V, V DS =0VI GSS -1100nA Drain-source on-state resistanceV GS =4.5V, I D =21AV GS =4.5V, I D =21A, SMD versionR DS(on)-- 14.914.5 19.919.6m ΩDrain-source on-state resistanceV GS =10V, I D =21AV GS =10V, I D =21A, SMD versionR DS(on)--10.39.912.912.61Current limited by bondwire ; with an RthJC = 1.8K/W the chip is able to carry I D = 64A at 25°C, for detailed information see app.-note ANPS071E available at /optimos 2Defined by design. Not subject to production test.3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.IPB15N03LElectrical Characteristics ParameterSymbol ConditionsValues Unitmin.typ.max.Dynamic Characteristics Transconductance g fs V DS ≥2*I D *R DS(on)max , I D =42A2142-SInput capacitance C iss V GS =0V, V DS =25V, f =1MHz-8501130pF Output capacitanceC oss -330330Reverse transfer capacitance C rss -90130Gate resistance R G -1-ΩTurn-on delay time t d(on)V DD =15V, V GS =10V, I D =21A, R G =7.8Ω- 6.59.8nsRise timet r -2030Turn-off delay time t d(off)-2436Fall timet f -14.521.8Gate Charge Characteristics Gate to source charge Q gs V DD =15V, I D =21A- 2.7 3.6nCGate to drain charge Q gd -7.49.3Gate charge total Q g V DD =15V, I D =21A, V GS =0 to 5V -12.715.9Output charge Q ossV DS =15V, I D =21A, V GS =0V-12.215.3nC Gate plateau voltage V (plateau)V DD =15V, I D =21A -3.5-VReverse DiodeInverse diode continuous forward currentI ST C =25°C--42AInv. diode direct current, pulsed I SM --168Inverse diode forward voltage V SD V GS =0V, I F =42A -0.95 1.25V Reverse recovery time t rr V R =-V, I F =l S , d i F /d t =100A/µs-2431ns Reverse recovery chargeQ rr-1823nCIPB15N03L1 Power dissipation P tot = f (T C )P t o t2 Drain current I D = f (T C )parameter:V≥ 10 VI D4 Max. transient thermal impedance ZthJC = f (t p )parameter : D = t/T10 10 10 10 10 10 K/WZ t h JC3 Safe operating area I D = f ( V DS )parameter : D = 0 , T = 25 °C2I DIPB15N03L5 Typ. output characteristic I D = f (V DS ); T j =25°C parameter: t= 80 µsI D6 Typ. drain-source on resistance R DS(on) = f (I D )parameter: Vm Ω65R D S (o n )7 Typ. transfer characteristics I D = f ( V GS ); V DS ≥ 2 x I D x R DS(on)max parameter: t p = 80 µsI D8 Typ. forward transconductance g fs = f(I D ); T j =25°C parameter: g fsg f sIPB15N03L9 Drain-source on-state resistance R DS(on) = f (T j )parameter : I D = 21 A, VGS = 10 Vm Ω30IPP15N03LR D S (o n)10 Typ. gate threshold voltage V GS(th) = f (T j )parameter: V GS = V DSV G S (t h)11 Typ. capacitances C = f (V DS )parameter: V GS =0V, f =1 MHzp F12 Forward character. of reverse diode I F = f (V SD )parameter: T, t p = 80 µsI FIPB15N03L13 Typ. avalanche energy E AS = f (T j )par.: I D = 20 A, V DD = 25 V, R GS = 25 Ω14 Typ. gate charge V GS = f (Q Gate )parameter: I= 21 A pulsedV GS15 Drain-source breakdown voltage V (BR)DSS = f (T j )parameter: I =10 mAV (B R )D S SIPB15N03L Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). 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