C8-R4L中文资料
EP3C10E144C8中文资料(Altera)中文数据手册「EasyDatasheet - 矽搜」
对于Cyclone III器件最大额定值.
表1-1 列出绝对
芯片中文手册,看全文,戳
1–2
第 1章： Cyclone III器件数据表
电气特性
1
超出所列条件
表1-1 对器件造成永久性损坏.
此外,在延长时间周期绝对最大额定值设备操作具有设备不利影响.
表 1-1. Cyclone III器件绝对最大额定值
(1)
符
参数
况
过冲持续时间为％高时间
VI = 3.95 V
100
VI = 4.0 V
95.67
VI = 4.05 V
55.24
VI = 4.10 V
31.97
VI = 4.15 V
18.52
VI = 4.20 V
10.74
Vi
交流输入 电压
VI = 4.25 V VI = 4.30 V
6.23 3.62
Cyclone III器件.稳态电压和预期电流值
III器件中提供旋风
表1-3.
没有高原.
所有系统必须严格单调
表 1-3. Cyclone III器件推荐工作条件
(1), (2)
符
参数
条件
Min Typ Max Unit
VCCINT (3)
电源电压为内部逻辑
电源电压为输出缓冲器,3.3-V
手术
—
1.15 1.2 1.25
运行条件
当Cyclone III器件在一个系统中实现,它们是根据一组定义参数分级.为防护持 Cyclone III器件中最高性能和可靠性,系统设计人员必须考虑本文件中操 作要求. Cyclone III器件提供商用,工业和汽车级版本.商业设备在-6（最 快）,-7和-8速度等级提供.工业和汽车设备仅在-7速度年级课程.
EP1C12Q240C8N中文资料(Altera)中文数据手册「EasyDatasheet - 矽搜」
注意 表 1-1： (1) 该参数包括全局时钟引脚.
EP1C3 59,904
1 104
EP1C4 78,336
2 301
EP1C6 92,160
2 185
EP1C12 239,616
2 249
Cyclone器件在四方扁平封装（QFP）,并提供节省空间
FineLine ® BGA封装（见
表1-2
通过 1–3).
于接口和支持ASSP和ASIC器件. Altera还提供新低成本串行配置设备
配置Cyclone器件.
特征
Cyclone器件系列具有以下特性：
■ 2,910 20060个LE,见
表1-1
■ 高达294,912 RAM位（36,864字节）
■ 通过低成本串行配置设备支持配置
■ 支持LVTTL,LVCMOS,SSTL-2和SSTL-3 I / O标准
65
EP1C4
—
EP1C6
—
EP1C12
—
EP1C20
—
104
—
—
—
—
—
—
—
249
301
98
185
185
—
—
—
173
185
249
—
—
—
—
233
301
须知 表 1-2： (1) TQFP：薄型四方扁平封装.
PQFP：塑料四方扁平封装. (2) Cyclone器件支持在同一封装内垂直迁移（即,设计人员可以之间迁移
BGA
1.0
441
21×21
文件 修订记录
表1-4
显示修订历史此文档.
表 1-4.文档修订历史记录
EP1C4T324C8资料
324-Pin FineLine BGA
1.0 361 19 × 19
400-Pin FineLine BGA
1.0 441 21 × 21
Pitch (mm) Area (mm 2) Length × width (mm × mm)
2
Altera Corporation
Table 1. Cyclone Device Features Feature
LEs M4K RAM blocks (128 × 36 bits) Total RAM bits PLLs Maximum user I/O pins (1) Note to Table 1:
(1) This parameter includes global clock pins.
65
144-Pin TQFP (1), (2)
104
240-Pin PQFP (1)
256-Pin FineLine BGA
324-Pin FineLine BGA
400-Pin FineLine BGA
EP1C3 EP1C4 EP1C6 EP1C12 EP1C20 Notes to Table 2:
Preliminary Information
Cyclone FPGA Family Data Sheet
Table of Contents
Introduction ........................................................................................................1 Features ............................................................................................................... 1 Table of Contents ...............................................................................................3 Functional Description......................................................................................4 Logic Array Blocks.............................................................................................6 Logic Elements ...................................................................................................9 MultiTrack Interconnect .................................................................................17 Embedded Memory.........................................................................................23 Global Clock Network & Phase-Locked Loops...........................................34 I/O Structure ....................................................................................................44 Power Sequencing & Hot Socketing .............................................................60 IEEE Std. 1149.1 (JTAG) Boundary Scan Support .......................................60 SignalTap II Embedded Logic Analyzer ...................................................... 65 Configuration ...................................................................................................65 Operating Conditions......................................................................................67 Power Consumption........................................................................................73 Timing Model ...................................................................................................73 Software............................................................................................................. 93 Device Pin-Outs ...............................................................................................93 Ordering Information......................................................................................93
《中文核心期刊目录》
中文核心期刊目录中文核心期刊是指由北京大学图书馆编辑发布的《中文核心期刊要目总览》中收录的期刊类别。
我校目前认定的中文核心期刊即为《中文核心期刊要目总览》第五版（2008年）中收录的期刊，具体目录如下。
第一编哲学、社会学、政治、法律 ................................................... - 1 - A/K综合性人文、社会科学............................................................................ - 1 - B（除B9）哲学 ............................................................................................... - 2 - B9宗教.............................................................................................................. - 2 - C8统计学.......................................................................................................... - 2 - C9l社会学......................................................................................................... - 2 - C92人口学........................................................................................................ - 2 - C93管理学........................................................................................................ - 3 - C96人才学........................................................................................................ - 3 - C95民族学........................................................................................................ - 3 - Dl/3/5国际政治 ................................................................................................ - 3 - D2,4,6中国政治................................................................................................ - 3 - D9法律.............................................................................................................. - 4 - 第二编经济........................................................................................ - 4 - F综合性经济科学 ............................................................................................ - 4 - F1世界经济 ...................................................................................................... - 4 - F0,12,2（除F23,27）中国经济、经济计划与管理 ....................................... - 4 - F23会计 ............................................................................................................ - 5 - F3农业经济 ...................................................................................................... - 5 - F4/6(含F27)工业经济 ...................................................................................... - 5 - F59旅游经济 .................................................................................................... - 5 - F7贸易经济 ...................................................................................................... - 5 - F81财政 ............................................................................................................ - 5 -F82/84货币/金融融、银行/保险..................................................................... - 6 - 第三编文化、教育、历史 ................................................................... - 6 - G0/21信息与传播、新闻学、新闻事业......................................................... - 6 - G23出版事业.................................................................................................... - 6 - G25,35图书馆学、情报学............................................................................... - 6 - G27档案学........................................................................................................ - 7 - G3(除G35)科学、科学研究（除情报学） .................................................... - 7 - G4教育综合、教育事业.................................................................................. - 7 - G61学前教育、幼儿教育................................................................................ - 7 - G62,63初等教育/中等教育.............................................................................. - 7 - G64高等教育.................................................................................................... - 7 - G7各类教育...................................................................................................... - 8 - G8体育.............................................................................................................. - 8 - H0/2语言学/汉语/中国少数民族语言 ............................................................ - 8 - H3/9--外国语..................................................................................................... - 8 - I1/3/7世界文学................................................................................................. - 8 - I0/20/210文学理论........................................................................................... - 9 - I21/29中国文学作品 ........................................................................................ - 9 - J综合性艺术..................................................................................................... - 9 - J2,3，5绘画、书法、工艺美术...................................................................... - 9 - J4摄影艺术....................................................................................................... - 9 - J6音乐类........................................................................................................... - 9 - J7舞蹈............................................................................................................... - 9 - J8戏剧............................................................................................................. - 10 - J9电影、电视艺术......................................................................................... - 10 - K（除K85/87/9）历史(除文物考古) ............................................................ - 10 - K85/87文物考古............................................................................................. - 10 - 第四编自然科学 ................................................................................. - 10 - Ｎ/Q,Ｔ/X综合性科学技术............................................................................ - 10 -O1数学............................................................................................................ - 12 - O3力学............................................................................................................ - 12 - O4物理学........................................................................................................ - 12 - O6/7化学/晶体学 ........................................................................................... - 12 - P1天文学 ........................................................................................................ - 13 - P2测绘学 ........................................................................................................ - 13 - P3地球物理学 ................................................................................................ - 13 - P4大气科学(气象学) ...................................................................................... - 13 - P5地质学 ........................................................................................................ - 13 - P7海洋学 ........................................................................................................ - 13 - K9,P9地理学 .................................................................................................. - 14 - Q（除q9498)生物科学综合 .......................................................................... - 14 - Q94植物学...................................................................................................... - 14 - Q95/98动物学/昆虫学类 ............................................................................... - 14 - 第五编医药、卫生 ............................................................................. - 14 - R综合性医药卫生.......................................................................................... - 14 - R1预防医学、卫生学.................................................................................... - 15 - R2中国医学.................................................................................................... - 15 - R3基础医学.................................................................................................... - 15 - R4/8临床医学/特种医学................................................................................ - 16 - R5内科学........................................................................................................ - 16 - R6外科学........................................................................................................ - 16 - R71妇产科学.................................................................................................. - 16 - R72儿科学...................................................................................................... - 17 - R73肿瘤学...................................................................................................... - 17 - R74神经病学与精神病学.............................................................................. - 17 - R75皮肤病学与性病学.................................................................................. - 17 - R76耳鼻咽喉科学.......................................................................................... - 17 -R78口腔科学.................................................................................................. - 17 - R8特种医学.................................................................................................... - 18 - R9药学............................................................................................................ - 18 - 第六编农业科学 ................................................................................. - 18 -S综合性农业科学 .......................................................................................... - 18 - S1农业基础科学 ............................................................................................ - 18 - S2农业工程 .................................................................................................... - 19 - S3,5农学、农作物 ......................................................................................... - 19 - S4植物保护 .................................................................................................... - 19 - S6园艺 ............................................................................................................ - 19 - S7林业 ............................................................................................................ - 19 - S8畜牧、动物医学 ........................................................................................ - 19 - S9水产、渔业 ................................................................................................ - 20 - 第七编工业技术 ................................................................................. - 20 -TB一般工业技术 ........................................................................................... - 20 - TD(除TD82)矿业工程(除煤矿开采)............................................................. - 20 - TE石油、天然气............................................................................................ - 20 - TF冶金工业.................................................................................................... - 21 - TG金属学与金属工艺 ................................................................................... - 21 - TH机械、仪表工业 ....................................................................................... - 21 - TJ武器工业..................................................................................................... - 21 - TK能源与动力工程 ....................................................................................... - 22 - TL原子能技术类............................................................................................ - 22 - TM电工技术................................................................................................... - 22 - TN无线电电子学、电信技术 ....................................................................... - 22 - TP自动化技术、计算机技术........................................................................ - 23 - TQ化学工业 ................................................................................................... - 23 - TS（除TS1,2）轻工业、手工业 .................................................................. - 23 -TS1纺织工业、染整工业.............................................................................. - 23 - TS2食品工业.................................................................................................. - 24 - TU建筑科学 ................................................................................................... - 24 - TV水利工程 ................................................................................................... - 24 - U综合性交通运输.......................................................................................... - 24 - U2铁路运输.................................................................................................... - 24 - U4公路运输.................................................................................................... - 25 - U6水路运输.................................................................................................... - 25 - V航空、航天.................................................................................................. - 25 - X(除X9)环境科学 .......................................................................................... - 25 - X9安全科学.................................................................................................... - 25 -第一编哲学、社会学、政治、法律A/K综合性人文、社会科学1.中国社会科学2.北京大学学报.哲学社会科学版3.中国人民大学学报4.学术月刊5.北京师范大学学报．社会科学版6.文史哲7.学术研究8.江海学刊9.复旦学报.社会科学版10.吉林大学社会科学学报11.社会科学12.社会科学战线13.江苏社会科学14.南京大学学报.哲学、人文科学、社会科学15.南开学报.哲学社会科学版16.河北学刊17.厦门大学学报.哲学社会科学版18.浙江学刊19.浙江大学学报.人文社会科学版20.浙江社会科学21.天津社会科学22.社会科学研究23.中山大学学报.社会科学版24.华中师范大学学报.人文社会科学版25.求是学刊26.人文杂志27.江西社会科学28.湖南师范大学社会科学学报29.四川大学学报.哲学社会科学版30.学习与探索31.江汉论坛32.华东师范大学学报.哲社版33.南京师大学报.社会科学版34.武汉大学学报.人文科学版35.求索36.郑州大学学报.哲学社会科学版37.东北师大学报.哲学社会科学版38.清华大学学报.哲学社会科学版39.中州学刊40.南京社会科学41.河南大学学报.社会科学版42.上海交通大学学报.哲学社会科学版43.甘肃社会科学44.思想战线45.山东社会科学46.西北师大学报.社会科学版47.社会科学辑刊48.福建论坛.人文社会科学版49.西南师范大学学报.人文社会科学版50.学术界51.陕西师范大学学报.哲学社会科学版52.广东社会科学53.国外社会科学54.西安交通大学学报.哲学社会科学版55.河南师范大学学报.哲学社会科学版56.学术交流57.东岳论丛58.东南学术59.学海60.学术论坛61.武汉大学学报.人文科学版62.山东大学学报.哲学社会科学版63.兰州大学学报.社会科学版64.探索65.西北大学学报.哲学社会科学版66.安徽师范大学学报.人文社会科学版67.齐鲁学刊68.天津师范大学学报.社会科学版69.湖北社会科学70.中国社会科学院研究生院学报71.上海师范大学学报.哲学社会科学版72.深圳大学学报.人文社会科学版73.广西社会科学74.暨南学报.哲学社会科学版75.华南师范大学学报.社会科学版76.安徽大学学报.哲学社会科学版77.首都师范大学学报.社会科学版78.湘潭大学学报.哲学社科学版79.河南社会科学80.湖南社会科学81.学术探索82.探索与争鸣83.杭州师范大学学报.社会科学版84.烟台大学学报.哲学社会科学版85.江苏大学学报.社会科学版86.湖北大学学报.哲学社会科学版87.东南大学学报.哲学社会科学版88.高校理论战线89.同济大学学报.社会科学版90.山西大学学报.哲学社科学版91.福建师范大学学报.哲学社会科学92.苏州大学学报.哲学社会科学版93.河北大学学报.哲学社会科学版94.武汉理工大学学报.社会科学版95.重庆大学学报.社会科学版96.山西师大学报.社会科学版97.河北师范大学学报.哲学社会科学版98.云南大学学报.社会科学版99.北方论丛100.云南社会科学101.社会科学家102.华中科技大学学报.社会科学版103.四川师范大学学报.社会科学版104.湖南大学学报.社会科学版105.广西师范大学学报.哲学社会科学版106.上海大学学报.社会科学版107.湖南科技大学学报.社会科学版108.吉首大学学报.社会科学版109.江淮论坛110.北京社会科学111.前沿112.南昌大学学报.人文社会科学版113.中国青年政治学院学报114.内蒙古大学学报.哲学社会科学版115.中国地质大学学报.社会科学版116.扬州大学学报.人文社会科学版117.宁夏社会科学118.徐州师范大学学报.哲学社会科学版119.内蒙古社会科学120.东北大学学报.社会科学版121.山东师范大学学报.人文社会科学版B（除B9）哲学l.哲学研究2.心理学报3.心理科学4.哲学动态5.世界哲学6.心理科学进展7.中国哲学史自然辩证法通讯8.道德与文明9.心理发展与教育10.现代哲学11.孔子研究12.周易研究13.伦理学研究B9宗教l.世界宗教研究2.宗教学研究3.敦煌学辑刊4.中国宗教5.西藏研究6.法音7.世界宗教文化8.中国道教9.佛学研究10.中国穆斯林C8统计学l.统计研究2.数理统计与管理3.中国统计4.统计与决C9l社会学1.社会学研究2.社会3.妇女研究论丛4.青年研C92人口学l.人口研究2.中国人口科学3.人口与经济4.人口学刊5.人口与发展C93管理学1.管理科学学报2.中国管理科学3.管理工程学报4.领导科学C96人才学1.中国人才C95民族学1.民族研究2.世界民族3.广西民族研究4.广西民族大学学报.哲学社会科学版5.中央民族大学学报.哲学社会科学版6.黑龙江民族从刊7.西北民族研究8.中南民族大学学报.人文社会科学版9.贵州民族研究10.回族研究11.云南民族大学学报.哲学社会科学版12.西南民族大学学报.人文社会科学版13.青海民族研究14.中国民族Dl/3/5国际政治1.世界经济与政治2.现代国际关系3.欧洲研究4.国际问题研究5.当代世界与社会主义6.美国研究7.国际论坛8.当代亚太9.国际观察10.俄罗斯中亚东欧研究11.国外理论动态12.国际政治研究13.当代世界社会主义问题14.世界知识15.外交评论16.当代世界17.日本学刊18.西亚非洲19.太平洋学报20.俄罗斯研究D2,4,6中国政治1.中国行政管理2.政治学研究3.求是4.马克思主义与现实5.教学与研究6.国家行政学院学报7.马克思主义研究8.社会主义研究9.半月谈10.上海行政学院学报11.理论前沿12.毛泽东邓小平理论研究13.瞭望14.科学社会主义15.中共党史研究16.中国人民公安大学学报17.毛泽东思想研究18.思想理论教育导刊19.中国党政干部论坛20.北京行政学院学报21.新视野22.江苏行政学院学报23.云南行政学院学报24.中共中央党校学报25.理论探讨26.党的文献27.理论与改革28.中国劳动关系学院学报29.长白学刊30.求实31.理论探索32.学校党建与思想教育33.理论月刊34.前线35.中国特色社会主义研究36.思想教育研究37.湖北行政学院学报38.党建研究39.行政论坛40.理论学刊41.中共福建省委党校学报42.人民论坛43.中央社会主义学院学报44.中国青年研究45.理论导刊46.南京政治学院学报47.红旗文稿D9法律1.法学研究2.中国法学3.法学4.法商研究5.政法论坛6.现代法学7.中外法学8.法学评论9.法律科学10.法制与社会发展11.法学家12.比较法研究13.环境法律评论14.当代法学15.法学论坛16.政治与法律17.河北法学18.法学杂志19.法律适用人民司法20.行政法学研究21.中国刑事法杂志22.人民司法23.华东政法大学学报24.人民检察25.知识产权26.中国法医学杂志27.中国司法鉴定第二编经济F综合性经济科学1.经济研究2.经济学动态3.经济学家4.经济科学5.经济评论6.南开经济研究7.当代经济科学8.当代经济研究9.中南财经政法大学学报10.经济纵横11.山西财经大学学报12.经济问题13.现代财经14.上海财经大学学报15.经济经纬16.贵州财经学院学报17.首都经济贸易大学学报18.江西财经大学学报19.河北经贸大学学报20.云南财经大学学报F1世界经济1.世界经济2.经济社会体制比较3.外国经济与管理4.世界经济研究5.国际经济评论6.世界经济文汇7.东北亚论坛8.亚太经济9.世界经济与政治论坛F0,12,2（除F23,27）中国经济、经济计划与管理1.管理世界2.数量经济技术经济研究3.地域研究与开发4.改革5.经济理论与经济管理6.开发研究7.上海经济研究8.宏观经济研究9.长江流域资源与环境10.经济研究参考11.生产力研究12.城市问题13.城市发展研究14.中国经济史研究15.资源科学16.中国人力资源开发17.经济体制改革18.经济问题探索19.资源与产业20.中国经济问题21.南方经济22.现代城市研究23.消费经济24.生态经济25.经济数学26.中国流通经济27.开放导报28.特区经济29.现代经济探讨30.宏观经济管理31.运筹与管理32.改革与战略33.技术经济与管理研究34.中国经贸导刊F23会计1.会计研究2.审计研究3.审计与经济研究4.财务与会计5.财会通讯.综合6.会计之友7.财会月刊.会计8.中国审计9.商业会计10.上海立信会计学院学报11.财会研究12.中国注册会计师13.事业财会F3农业经济1.中国农村经济2.农业经济问题3.中国农村观察4.中国土地科学5.农业现代化研究6.农业技术经济7.调研世界8.中国农业资源与区划9.农村经济10.农业经济11.世界农业12.林业经济问题13.中国土地14.国土与自然资源研究15.林业经济16.中国渔业经济F4/6(含F27)工业经济1.中国工业经济2.南开管理评论3.经济管理4.管理科学5.工业工程与管理6.管理评论7.企业经济8.预测9.软科学10.工业工程11.企业管理12.经济与管理研究F59旅游经济1.旅游学刊F7贸易经济1.国际贸易问题2.国际贸易3.财贸经济4.商业经济与管理5.国际经贸探索6.商业研究7.销售与市场8.广东商学院学报9.商业时代10.中国商贸11.价格理论与实践12.北京工商大学学报.社会科学版13.国际经济合作14.对外经贸实务15.江苏商论16.国际商务研究17.中国物流与采财经研究9.财经问题研究10.中国财政11.财经科学12.中国税务13.财政监F81财政1.税务研究2.财政研究3.涉外税务4.税务与经济5.中央财经大学学报6.财经论丛7.当代财经8.财经研究9.财经问题研究10.中国财政11.财经科学12.中国税务13.财政监督F82/84货币/金融融、银行/保险1.金融研究2.国际金融研究3.金融论坛4.金融理论与实践5.保险研究6.证券市场导报7.中国金融8.武汉金融9.上海金融10.金融与经济11.财经理论与实践12.财经13.投资研究14.新金融15.广东金融学院学报16.浙江金融17.河南金融管理干部学院学报18.经济导刊19.南方金融第三编文化、教育、历史G0/21信息与传播、新闻学、新闻事业1.新闻与传播研究2.国际新闻界3.现代传播4.新闻记者5.新闻大学6.当代传播7.中国记者8.新闻界9.新闻战线10.传媒11.传媒观察12.中国报业13.新闻与写作14.新闻爱好者15.新闻知识2广播、电视事业1.中国广播电视学刊2.电视研究G23出版事业1.编辑学报2.中国科技期刊研究3.编辑之友4.出版发行研究5.中国出版6.科技与出版7.编辑学刊8.出版广角9.中国编辑10.中国图书评论11.读书G25,35图书馆学、情报学1.中国图书馆学报2.图书情报工作3.情报学报4.大学图书馆学报5.图书馆杂志6.图书馆论坛7.图书馆8.情报科学9.图书馆建设10.现代图书情报技术11.图书情报知识12.情报资料工作13.情报理论与实践14.情报杂志15.图书馆工作与研究16.图书馆理论与实践17.图书馆学研究18.图书与情报19.国家图书馆学刊G27档案学1.档案学通讯2.档案学研究3.中国档案4.档案与建设5.浙江档案6.山西档案7.北京档案8.档案管理9.档案10.兰台世界G3(除G35)科学、科学研究（除情报学）1.科学学研究2.科研管理3.科学学与科学技术管理4.研究与发展管理5.中国软科学6.中国科技论坛7.科技进步与对策8.科学管理研究9.科技管理研究10.科技导报G4教育综合、教育事业1.教育研究2.比较教育研究3.全球教育展望4.北京大学教育评论5.教育理论与实践教育评论6.教师教育研究7.外国教育研究8.清华大学教育研究9.华东师范大学学报.教育科学版10.教育与经济11.中国教育学刊12.教育科学13.当代教育科学14.中国电化教育15.教育学报16.电化教育研究17.教育探索18.中国远程教育19.教育评论20.河北师范大学学报.教育科学版21.开放教育研究22.教育导刊23.国家教育行政学院学报24.教育学术月刊(原江西教育科研)G61学前教育、幼儿教育1.学前教育研究G62,63初等教育/中等教育1.课程、教材、教法2.人民教育3.教学与管理4.上海教育科研5.教育科学研究6.教育研究与实验7.教育学刊.中学版8.外国中小学教育9.中小学管理10.中学语文教学11.中学语文教学参考12.中小学语文教学与研究13.中小学外语教学14.历史教学15.中学地理教学参考16.数学教育学报17.数学通报18.中学政治教学参考19.思想政治课教学20.物理教学21.中学物理22.中学化学教学参考23.化学教育24.生物学教学G64高等教育1.高等教育研究(武汉)2.教育发展研究3.中国高等教育4.学位与研究生教育5.江苏高教6.中国高教研究7.现代大学教育8.高等工程教育研究9.高教探索10.黑龙江高教研究11.复旦教育论坛12.中国大学教学13.辽宁教育研究14.现代教育科学.高教研究G7各类教育1.中国特殊教育2.民族教育研究3.职业技术教育4.中国成人教育5.教育与职业6.职教论坛7.成人教育8.中国职业技术教育9.继续教育研究G8体育1.体育科学2.中国体育科技3.体育与科学4.北京体育大学学报5.体育学刊6.成都体育学院学报7.上海体育学院学报8.体育文化导刊9.武汉体育学院学报10.天津体育学院学报11.西安体育学院学报12.广州体育学院学报13.山东体育学院学报14.首都体育学院学报15.沈阳体育学院学报16.南京体育学院学报.社会科学版H0/2语言学/汉语/中国少数民族语言1.中国语文2.当代语言学3.中国翻译4.语言教学与研究5.语言研究6.世界汉语教学7.语言文字应用8.汉语学习9.方言10.语文研究11.古汉语研究12.民族语文13.语言科学14.修辞学习15.上海翻译16.辞书研究17.中国科技翻译18.语文建设H3/9--外国语1.外语教学与研究2.外国语3.外语与外语教学4.现代外语5.外语界6.外语学刊7.外语教学8.解放军外国语学院学报9.外语研究10.四川外语学院学报11.山东外语教学12.外语教学理论与实践13.中国俄语教学I1/3/7世界文学1.外国文学评论2.外国文学研究3.外国文学4.国外文学5.当代外国文学6.世界文学7.俄罗斯文艺8.译林I0/20/210文学理论1.文学评论2.文学遗产3.文艺研究4.当代作家评论5.文艺争鸣6.中国现代文学研究丛刊7.文艺理论研究8.鲁迅研究月刊9.南方文坛10.红楼梦学刊11.小说评论12.中国比较文学13.文艺理论与批评14.民族文学研究15.中国文学研究16.当代文坛17.明清小说研究18.新文学史料19.文艺评论20.名作欣赏I21/29中国文学作品1.人民文学2.当代3.收获4.十月5.上海文学6.中国作家7.钟山8.作家杂志9.花城10.长城11.大家12.山花13.天涯14.解放军文艺15.清明16.芙蓉17.北京文学.原创版18.诗刊19.青年文学20.莽原21.飞天22.剧本23.小说界24.时代文学25.民族文学J综合性艺术1.文艺研究2.解放军艺术学院学报3.云南艺术学院学报4.民族艺J2,3，5绘画、书法、工艺美术1.新美术2.装饰美术3.美术研究4.美术观察5.美术6.南京艺术学院学报.美术与设计版7.世界美术8.美苑9.书法10.中国书法J4摄影艺术1.中国摄影J6音乐类1.中国音乐学2.中央音乐学院学报3.音乐研究4.中国音乐5.人民音乐6.音乐艺术7.黄钟8.音乐创作J7舞蹈1.舞蹈2.北京舞蹈学院学报J8戏剧1.戏剧2.戏剧艺术3.中国戏剧4.艺术百家5.戏曲艺术6.戏剧文学7.上海戏剧8.当代戏剧9.中国京剧10.四川戏剧J9电影、电视艺术1.电影艺术2.当代电影3.世界电影4.北京电影学院学报5.电影新作6.中国电视7.中国电影市场8.电影文学9.当代电视K（除K85/87/9）历史(除文物考古)1.历史研究2.近代史研究3.中国史研究4.史学月刊5.史学理论研究6.世界历史7.史学集刊8.中国文化研究9.清史研究10.史林11.安徽史学12.抗日战争研究13.史学史研究14.民国档案15.中华文化论坛16.文献17.古籍整理研究学刊18.当代中国史研究19.历史档案20.中国农史21.中国边疆史地研究22.中国史研究动态23.中国典籍与文化24.西域研究25.中国藏学K85/87文物考古1.文物2.考古3.考古学报4.考古与文物5.中原文物6.华夏考古7.东南文化8.敦煌研究9.中国历史文物10.四川文物11.江汉考古12.农业考古13.故宫博物院院刊14.北方文物第四编自然科学Ｎ/Q,Ｔ/X综合性科学技术1.科学通报2.清华大学学报.自然科学版3.哈尔滨工业大学学报4.西安交通大学学报5.上海交通大学学报6.华中科技大学学报.自然科学版7.东北大学学报.自然科学版8.北京大学学报.自然科学版9.同济大学学报.自然科学版10.浙江大学学报.工学版11.中国科学.E辑12.大连理工大学学报13.中山大学学报.自然科学版14.东南大学学报.自然科学版15.中国海洋大学学报.自然科学版16.自然科学进展17.北京理工大学学报18.北京科技大学学报19.武汉大学学报.理学版20.高技术通讯21.南京大学学报.自然科学22.厦门大学学报.自然科学版23.华南理工大学学报.自然科学版24.中南大学学报.自然科学版25.吉林大学学报.理学版26.东北师大学报.自然科学版27.河海大学学报.自然科学版28.武汉理工大学学报29.北京师范大学学报.自然科学版30.重庆大学学报31.天津大学学报32.四川大学学报.自然科学版33.西南交通大学学报34.国防科技大学学报35.兰州大学学报.自然科学版36.四川师范大学学报.自然科学版37.成都理工大学学报.自然科学版38.西北大学学报.自然科学版39.兰州理工大学学报40.湖南大学学报.自然科学版41.中国科学技术大学学报42.合肥工业大学学报.自然科学版43.四川大学学报.工程科学版44.复旦学报.自然科学版45.吉林大学学报.工学版46.陕西师范大学学报.自然科学版47.云南大学学报.自然科学版49.西北工业大学学报50.福州大学学报.自然科学版51.北京工业大学学报52.郑州大学学报.工学版53.华中师范大学学报.自然科学版54.北京化工大学学报.自然科学版55.北京交通大学学报56.内蒙古大学学报.自然科学版57.南京工业大学学报.自然科学版58.江苏大学学报.自然科学版59.应用科学学报60.哈尔滨工程大学学报61.中国科学.G辑：物理学、力学、天文学62.扬州大学学报.自然科学版63.福建师范大学学报.自然科学版64.西南师范大学学报.自然科学版65.华东理工大学学报66.华东师范大学学报.自然科学版67.武汉大学学报.工学版68.上海大学学报.自然科学版69.湘潭大学自然科学学报70.湖南师范大学自然科学学报71.南开大学学报.自然科学版72.桂林工学院学报73.空军工程大学学报.自然科学版74.山西大学学报.自然科学版75.广西师范大学学报.自然科学版76.黑龙江大学自然科学学报77.南京师大学报.自然科学版78.太原理工大学学报79.山东大学学报.理学版80.安徽大学学报.自然科学版81.辽宁工程技术大学学报.自然科学版82.河北师范大学学报.自然科学版83.华侨大学学报.自然科学版84.深圳大学学报.理工版85.中国科学院研究生院学报86.华南师范大学学报.自然科学版87.河南师范大学学报.自然科学版88.河北大学学报.自然科学版89.自然杂志90.河南大学学报.自然科学版91.河北工业大学学报92.宁夏大学学报.自然科学版93.科技通报94.西北师范大学学报.自然科学版95.河南科技大学学报.自然科学版96.郑州大学学报.理学版97.昆明理工大学学报.理工版98.南京理工大学学报.自然科学版99.江西师范大学学报.自然科学版100.中北大学学报.自然科学版101.安徽师范大学学报.自然科学版102.广西大学学报.自然科学版103.山东大学学报.工学版104.东华大学学报.自然科学版105.西南大学学报.自然科学版106.天津师范大学学报.自然科学版107.湖北大学学报.自然科学版108.浙江工业大学学报109.西安理工大学学报110.解放军理工大学学报.自然科学版111.南昌大学学报.理科版112.上海理工大学学报113.暨南大学学报.自然科学与医学版114.烟台大学学报.自然科学与工程版115.湖南科技大学学报.自然科学版116.济南大学学报.自然科学版117.海军工程大学学报118.江苏科技大学学报.自然科学版119.河北科技大学学报120.哈尔滨理工大学学报N自然科学总论1.系统工程理论与实践2.中国科学基金3.自然辩证法研究4.科学5.实验室研究与探索6.系统工程学报7.科学技术与辩证法8.系统工程9.系统科学学报10.自然辩证法通讯11.实验技术与管理12.中国科技史杂志13.系统工程理论方法应用14.自然科学史研究15.中国高校科技与产业化O1数学1.数学学报2.数学年刊.A辑3.应用数学学报4.中国科学.A辑、数学5.计算数学6.数学物理学报7.模糊系统与数学8.系统科学与数学9.数学进展10.应用数学11.高等学校计算数学学报12.工程数学学报13.应用概率统计14.高校应用数学学报.A辑15.数学杂志16.数值计算与计算机应用17.数学的实践与认识O3力学1.力学学报2.力学进展3.应用数学和力学4.固体力学学报5.爆炸与冲击计6.算力学学报7.力学与实践8.实验力学9.应用力学学报10.力学季刊空气动力学学报11.水动力学研究与进展.A辑12.机械强度13.振动与冲击O4物理学1.物理学报2.光学学报3.发光学报4.光子学报5.低温物理学报6.中国激光7.原子与分子物理学报8.声学学报9.物理学进展10.原子核物理评论11.物理12.量子电子学报13.高压物理学报14.光谱学与光谱分析15.量子光学学报16.大学物理17.核聚变与等离子体物理18.计算物理19.波谱学杂志20.低温与超导21.物理实验22.光散射学报O6/7化学/晶体学1.高等学校化学学报2.分析化学3.化学学报4.催化学报5.无机化学学报6.物理化学学报7.有机化学8.分析实验室9.色谱10.分析测试学报11.化学通报12.分子科学学报13.分析科学学报14.中国科学.B辑、化学15.化学进展16.理化检验.化学分册17.分子催化18.化学研究与应用19.化学试剂20.功能高分子学报21.光谱试验室22.合成化学23.人工晶体学报24.影像科学。
R1LP0408C中文资料
Rev.1.00, Aug.01.2003, page 2 of 13
R1LP0408C-I Series
Pin Arrangement
32-pin SOP 32-pin TSOP
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 VCC A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed. 2. L version. (−7LI) 3. SL version. (−5SI)
Capacitance
Rev.1.00, Aug.01.2003, page 3 of 13
R1LP0408C-I Series
Block Diagram
LSB V CC V SS • • • • •
MSB
A11 A9 A8 A15 A18 A10 A13 A17 A16 A14 A12
Row Decoder
Memory Matrix 2,048 × 2,048
R1LP0408C-I Series
X84129IG中文资料
元器件交易网This X84161/641/129 device has been acquired by IC MICROSYSTEMS from Xicor, Inc.ICmicTMIC MICROSYSTEMS16K/64K/128KX84161/641/129 µPort Saver EEPROMDESCRIPTIONMPSTM EEPROMFEATURES•Up to 10MHz data transfer rate •25ns Read Access Time •Direct Interface to Microprocessors and Microcontrollers —Eliminates I/O port requirements —No interface glue logic required —Eliminates need for parallel to serial converters •Low Power CMOS —1.8V–3.6V, 2.5V–5.5V and 5V ±10% Versions —Standby Current Less than 1µA —Active Current Less than 1mA •Byte or Page Write Capable —32-Byte Page Write Mode •Typical Nonvolatile Write Cycle Time: 2ms •High Reliability —100,000 Endurance Cycles —Guaranteed Data Retention: 100 YearsThe µPort Saver memories need no serial ports or special hardware and connect to the processor memory bus. Replacing bytewide data memory, the µPort Saver uses bytewide memory control functions, takes a fraction of the board space and consumes much less power. Replacing serial memories, the µPort Saver provides all the serial benefits, such as low cost, low power, low voltage, and small package size while releasing I/Os for more important uses. The µPort Saver memory outputs data within 25ns of an active read signal. This is less than the read access time of most hosts and provides “no-wait-state” operation. This prevents bottlenecks on the bus. With rates to 10 MHz, the µPort Saver supplies data faster than required by most host read cycle specifications. This eliminatesthe need for software NOPs.The µPort Saver memories communicate over one line of the data bus using a sequence of standard bus read and write operations. This “bit serial” interface allows the µPort Saver to work well in 8-bit, 16 bit, 32-bit, and 64-bitsystems.A Write Protect (WP) pin prevents inadvertent writes to the memory. Xicor EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.BLOCK DIAGRAMSystem Connection µP µC DSP ASIC RISCPorts SavedP0/CS P1/CLK P2/DIInternal Block Diagram MPSWPH.V. GENERATION TIMING & CONTROLA15A0 D7CE I/OCOMMAND DECODED0 OE WEOE WEAND CONTROLX DECEEPROM ARRAY 16K x 88K x 8 2K x 8LOGICP3/DOY DECODE DATA REGISTER7008 FRM F02.1©Xicor, Inc. 1994, 1997Patents Pending 7008-1.2 8/26/97 T2/C0/D0 SH1Characteristics subject to change without notice元器件交易网X84161/641/129PIN CONFIGURATIONS: Drawings are to the same scale, actual package sizes are shown in inches:8-LEAD PDIP 8-LEAD SOIC CE I/O WP V SS 1 2 X84161 3 X84641 4 .230 in. 8 7 6 5 V CC NC OE WE .190 in. NC VCC CE I/O 8-LEAD TSSOP 1 2 3 4 8 7 6 5 OE WE WP VSSPIN NAMES.114 in.X84161I/O CE OE WE WPData Input/Output Chip Enable Input Output Enable Input Write Enable Input Write Protect Input Supply Voltage Ground No Connect7008 FRM T01.252 in. 20-LEAD TSSOP14-LEAD SOIC CE I/O NC NC NC WP V SS 1 2 3 4 5 6 7 .230 in. X84129 14 13 12 11 10 9 8 V CC NC NC NC NC OE WE .390 in.NC NC CE I/O NC NC NC WP VSS NC1 2 3 4 5 6 7 8 9 10X8464120 19 18 17 16 15 14 13 12 11NC NC VCC NC NC NC NC OE WE NCVCC VSS.250 in.NC.252 in. 28-LEAD TSSOP NC NC CE CE CE I/O NC NC NC WP VSS NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 NC NC NC NC VCC NC NC .394 in. NC NC OE WE NC NC NCPACKAGE SELECTION GUIDE84161 8-Lead PDIP 8-Lead SOIC 8-Lead TSSOP 8-Lead PDIP 8-Lead SOIC 20-Lead TSSOP 8-Lead PDIP 14-Lead SOIC 28-Lead TSSOP7008 FRM T0A84641X8412984129. 252 in.7008 FRM F01PIN DESCRIPTIONS Chip Enable (CE) The Chip Enable input must be LOW to enable all read/ write operations. When CE is HIGH, the chip is deselected, the I/O pin is in the high impedance state, and unless a nonvolatile write operation is underway, the device is in the standby power mode. Output Enable (OE) The Output Enable input must be LOW to enable the output buffer and to read data from the device on the I/O line. Write Enable (WE) The Write Enable input must be LOW to write either data or command sequences to the device.Data In/Data Out (I/O) Data and command sequences are serially written to or serially read from the device through the I/O pin. Write Protect (WP) When the Write Protect input is LOW, nonvolatile writes to the device are disabled. When WP is HIGH, all functions, including nonvolatile writes, operate normally. If a nonvolatile write cycle is in progress, WP going LOW will have no effect on the cycle already underway, but will inhibit any additional nonvolatile write cycles.2元器件交易网X84161/641/129DEVICE OPERATION The X84161/641/129 are serial EEPROMs designed to interface directly with most microprocessor buses. Standard CE, OE, and WE signals control the read and write operations, and a single l/O line is used to send and receive data and commands serially. Data Timing Data input on the l/O line is latched on the rising edge of either WE or CE, whichever occurs first. Data output on the l/O line is active whenever both OE and CE are LOW. Care should be taken to ensure that WE and OE are never both LOW while CE is LOW. Read Sequence A read sequence consists of sending a 16-bit address followed by the reading of data serially. The address is written by issuing 16 separate write cycles (WE and CE LOW, OE HIGH) to the part without a read cycle between the write cycles. The address is sent serially, most significant bit first, over the I/O line. Note that this sequence is fully static, with no special timing restrictions, and the processor is free to perform other tasks on the bus whenever the device CE pin is HIGH. Once the 16 address bits are sent, a byte of data can be read on the I/O line by issuing 8 separate read cycles (OE and CE LOW, WE HIGH). At this point, writing a ‘1’ will terminate the read sequence and enter the low power standby state, otherwise the device will await further reads in the sequential read mode. Sequential Read The byte address is automatically incremented to the next higher address after each byte of data is read. The data stored in the memory at the next address can be read sequentially by continuing to issue read cycles. When the highest address in the array is reached, the address counter rolls over to address $0000 and reading may be continued indefinitely. Reset Sequence The reset sequence resets the device and sets an internal write enable latch. A reset sequence can be sent at any time by performing a read/write “0”/read operation (see Figs. 1 and 2). This breaks the multiple read or write cycle sequences that are normally used to read from or write to the part. The reset sequence can be used at any time to interrupt or end a sequential read or page load. As soon as the write “0” cycle is complete, the part is reset (unless a nonvolatile write cycle is in progress). The second read cycle in this sequence, and any further read cycles, will read a HIGH on the l/O pin until a valid read sequence (which includes the address) is issued. The reset sequence must be issued at the beginning of both read and write sequences to be sure the device initiates these operations properly.Figure 1. Read SequenceCEOEWEI/O (IN)"0"A15 A14 A13 A12 A11 A10 A9 A8A7 A6 A5 A4 A3 A2A1 A0I/O (OUT) RESETWHEN ACCESSING: X84161 ARRAY: A15–A11=0 X84641 ARRAY: A15–A13=0 X84129 ARRAY: A15–A14=0D7 D6 D5 D4 D3 D2 D1 D0LOAD ADDRESSREAD DATA7008 FRM F04.13元器件交易网X84161/641/129Figure 2: Write SequenceCEOEWEI/O (IN)"0"A15 A14 A13 A12 A11 A10 A9 A8A7 A6 A5 A4 A3 A2 A1 A0D7 D6 D5 D4 D3 D2 D1 D0"1" "0"I/O (OUT) RESETWHEN ACCESSING: X84161 ARRAY: A15–A11=0 X84641 ARRAY: A15–A13=0 X84129 ARRAY: A15–A14=0LOAD ADDRESSLOAD DATASTART NONVOLATILE WRITE7008 FRM F05.1Write Sequence A nonvolatile write sequence consists of sending a reset sequence, a 16-bit address, up to 32 bytes of data, and then a special “start nonvolatile write cycle” command sequence. The reset sequence is issued first (as described in the Reset Sequence section) to set an internal write enable latch. The address is written serially by issuing 16 separate write cycles (WE and CE LOW, OE HIGH) to the part without any read cycles between the writes. The address is sent serially, most significant bit first, on the l/O pin. Up to 32 bytes of data are written by issuing a multiple of 8 write cycles. Again, no read cycles are allowed between writes. The nonvolatile write cycle is initiated by issuing a special read/write “1”/read sequence. The first read cycle ends the page load, then the write “1” followed by a read starts the nonvolatile write cycle. The device recognizes 32byte pages (e.g., beginning at addresses XXXXXX00000 for X84161). When sending data to the part, attempts to exceed the upper address of the page will result in the address counter “wrapping-around” to the first address on thepage, where data loading can continue. For this reason, sending more than 256 consecutive data bits will result in overwriting previous data. A nonvolatile write cycle will not start if a partial or incomplete write sequence is issued. The internal write enable latch is reset when the nonvolatile write cycle is completed and after an invalid write to prevent inadvertent writes. Note that this sequence is fully static, with no special timing restrictions. The processor is free to perform other tasks on the bus whenever the chip enable pin (CE) is HIGH. Nonvolatile Write Status The status of a nonvolatile write cycle can be determined at any time by simply reading the state of the l/O pin on the device. This pin is read when OE and CE are LOW and WE is HIGH. During a nonvolatile write cycle the l/O pin is LOW. When the nonvolatile write cycle is complete, the l/O pin goes HIGH. A reset sequence can also be issued during a nonvolatile write cycle with the same result: I/O is LOW as long as a nonvolatile write cycle is in progress, and l/O is HIGH when the nonvolatile write cycle is done.4元器件交易网X84161/641/129Low Power Operation The device enters an idle state, which draws minimal current when: —an illegal sequence is entered. The following are the more common illegal sequences: • Read/Write/Write—any time • Read/Write ‘1’—When writing the address or writing data. • Write ‘1’—when reading data • Read/Read/Write ‘1’—after data is written to device, but before entering the NV write sequence. —the device powers-up; —a nonvolatile write operation completes. While a sequential read is in progress, the device remains in an active state. This state draws more current than the idle state, but not as much as during a read itself. To go back to the lowest power condition, an invalid condition is created by writing a ‘1’ after the last bit of a read operation. Write Protection The following circuitry has been included to prevent inadvertent nonvolatile writes: —The internal Write Enable latch is reset upon power-up. —A reset sequence must be issued to set the internal write enable latch before starting a write sequence. —A special “start nonvolatile write” command sequence is required to start a nonvolatile write cycle. —The internal Write Enable latch is reset automatically at the end of a nonvolatile write cycle. —The internal Write Enable latch is reset and remains reset as long as the WP pin is LOW, which blocks all nonvolatile write cycles. —The internal Write Enable latch resets on an invalid write operation. SYMBOL TABLEWAVEFORM INPUTS Must be steady May change from LOW to HIGH May change from HIGH to LOW Don’t Care: Changes Allowed N/A OUTPUTS Will be steady Will change from LOW to HIGH Will change from HIGH to LOW Changing: State Not Known Center Line is High Impedance5元器件交易网X84161/641/129ABSOLUTE MAXIMUM RATINGS* Temperature under Bias ...................... –65°C to +135°C Storage Temperature ........................... –65°C to +150°C Terminal Voltage with Respect to VSS .......................................–1V to +7V DC Output Current................................................... 5mA Lead Temperature (Soldering, 10 seconds)..........300°C RECOMMENDED OPERATING CONDITIONS Temperature Commercial Industrial Min. 0°C –40°C Max. +70°C +85°C +125°C7008 FRM T02*COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Supply Voltage X84161/641/129 X84161/641/129 – 2.5 X84161/641/129 – 1.8 Limits 5V ±10% 2.5V to 5.5V 1.8V to 3.6V7008 FRM T03Military† –55°C Notes: † Contact factory for Military availabilityD.C. OPERATING CHARACTERISTICS (VCC = 5V ±10%) (Over the recommended operating conditions, unless otherwise specified.) Limits Symbol ICC1ICC2 ISB1 ILI ILO VlL (1) VIH(1)Parameter VCC Supply Current (Read)VCC Supply Current (Write) VCC Standby Current Input Leakage Current Output Leakage Current Input LOW Voltage Input HIGH Voltage Output LOW Voltage Output HIGH VoltageMin.Max. 12 1 10 10Units mAmA µA µA µA V V V VTest Conditions OE = VIL, WE = VIH, I/O = Open, CE clocking @ 10MHzICC During Nonvolatile Write Cycle All Inputs at CMOS Levels CE = VCC, Other Inputs = VCC or VSS VIN = VSS to VCC VOUT = VSS to VCC–0.5 VCC x 0.7VCC x 0.3 VCC + 0.5 0.4VOL VOHIOL = 2.1mA IOH = –1mA7008 FRM T04.2VCC – 0.8Notes: (1) VIL Min. and VIH Max. are for reference only and are not tested.6元器件交易网X84161/641/129D.C. OPERATING CHARACTERISTICS (VCC = 2.5V to 5.5V) (Over the recommended operating conditions, unless otherwise specified.) Symbol ICC1 ICC2 ISB1 ILI ILO VlL(1) VIH(1) VOL VOH Parameter VCC Supply Current (Read) VCC Supply Current (Write) VCC Standby Current Input Leakage Current Output Leakage Current Input LOW Voltage Input HIGH Voltage Output LOW Voltage Output HIGH Voltage VCC – 0.4 –0.5 VCC x 0.7 Limits Min. Max. 500 2 1 10 10 VCC x 0.3 VCC + 0.5 0.4 Units µA mA µA µA µA V V V V IOL = 1mA, VCC = 3V IOH = –400µA, VCC = 3V7008 FRM T05.1Test Conditions OE = VIL, WE = VIH, I/O = Open, CE clocking @ 5MHz ICC During Nonvolatile Write Cycle All Inputs at CMOS Levels CE = VCC, Other Inputs = VCC or VSS VIN = VSS to VCC VOUT = VSS to VCCD.C. OPERATING CHARACTERISTICS (VCC = 1.8V to 3.6V) (Over the recommended operating conditions, unless otherwise specified.) Symbol ICC1 ICC2 ISB1 ILI ILO VlL(1) VIH(1) VOL VOH Parameter VCC Supply Current (Read) VCC Supply Current (Write) VCC Standby Current Input Leakage Current Output Leakage Current Input LOW Voltage Input HIGH Voltage Output LOW Voltage Output HIGH Voltage VCC – 0.2 –0.5 VCC x 0.7 Limits Min. Max. 300 1 1 10 10 VCC x 0.3 VCC + 0.5 0.4 Units µA mA µA µA µA V V V V IOL = 0.5mA, VCC = 2V IOH = –250µA, VCC = 2V7008 FRM T05.1Test Conditions OE = VIL, WE = VIH, I/O = Open, CE clocking @ 3MHz ICC During Nonvolatile Write Cycle All Inputs at CMOS Levels CE = VCC, Other Inputs = VCC or VSS VIN = VSS to VCC VOUT = VSS to VCCNotes: (1) VIL Min. and VIH Max. are for reference only and are not tested.7元器件交易网X84161/641/129CAPACITANCE Symbol CI/O(2) CIN(2) TA = +25°C, f = 1MHz, VCC = 5V Parameter Input/Output Capacitance Input Capacitance Max. 8 6 Units pF pF Test Conditions VI/O = 0V VIN = 0V7008 FRM T06Notes: (2) Periodically sampled, but not 100% tested.POWER-UP TIMING Symbol tPUR(3) tPUW(3) Parameter Power-up to Read Operation Power-up to Write Operation Max. 2 5 Units ms ms7008 FRM T07Notes: (3) Time delays required from the time the VCC is stable until the specific operation can be initiated. Periodically sampled, but not 100% tested.A.C. CONDITIONS OF TEST Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels VCC x 0.1 to VCC x 0.9 5ns VCC x 0.57008 FRM T08EQUIVALENT A.C. LOAD CIRCUITS5V 2.06KΩ OUTPUT 3.03KΩ 30pF 2.39KΩ OUTPUT 4.58KΩ 30pF 3V 2.8K Ω OUTPUT 5.6K Ω 30pF 2V7008 FRM F067008 FRM F078元器件交易网X84161/641/129A.C. CHARACTERISTICS (Over the recommended operating conditions, unless otherwise specified.) Read Cycle Limits – X84161/641/129† VCC = 5V±10% SymboltRC tCE tOE tOEL tOEH tLOW tHIGH tLZ(4)VCC = 2.5V – 5.5V VCC = 1.8V – 3.6V Min.200ParameterRead Cycle Time CE Access Time OE Access Time OE Pulse Width OE High Recovery Time CE LOW Time CE HIGH Time CE LOW to Output In Low Z CE HIGH to Output In High Z OE LOW to Output In Low Z OE HIGH to Output In High Z Output Hold from CE or OE HIGH WE HIGH Setup Time WE HIGH Hold TimeMin.100MaxMax.Min.330Max.Unitsns25 25 50 50 50 50 0 0 0 0 0 25 25 25 25 60 60 70 120 0 0 0 0 0 25 2550 50 90 90 90 180 0 30 0 0 30 0 0 25 2570 70ns ns ns ns ns ns nstHZ(4) tOLZ(4) tOHZ tOH tWES tWEH(4)35ns ns35ns ns ns nsNotes: (4) Periodically sampled, but not 100% tested. tHZ and tOHZ are measured from the point where CE or OE goes HIGH (whichever occurs first) to the time when I/O is no longer being driven into a 5pF load. † Contact factory for 10MHz X84129 availabilityRead CycletRC tLOW tCE tHIGHCEWEtWES tOEt OELt OEHOEtWEH t OHZI/Ot OLZ t LZDATAtOH t HZHIGH Z7008 FRM F089元器件交易网X84161/641/129Write Cycle Limits – X84161/641/129 VCC = 5V ±10% Symbol tNVWC tWCtWP tWPH tCS tCH tCP tCPH tOES tOEH tDS(6) tDH(6) tWPSU(7) tWPHD(7)(5)VCC = 2.5V – 5.5V VCC = 1.8V – 3.6V Min. Max. 5 20040 150 0 0 40 150 25 25 20 5 100 100Parameter Nonvolatile Write Cycle Time Write Cycle TimeWE Pulse Width WE HIGH Recovery Time Write Setup Time Write Hold Time CE Pulse Width CE HIGH Recovery Time OE HIGH Setup Time OE HIGH Hold Time Data Setup Time Data Hold Time WP HIGH Setup WP HIGH HoldMin.Max. 5Min.Max. 5Units ms nsns ns ns ns ns ns ns ns ns ns ns ns7008 FRM T1010025 65 0 0 25 65 25 25 12 5 100 10033070 200 0 0 70 200 50 50 30 5 150 150Notes: (5) tNVWC is the time from the falling edge of OE or CE (whichever occurs last) of the second read cycle in the “start nonvolatile write cycle” sequence until the self-timed, internal nonvolatile write cycle is completed. (6) Data is latched into the X84161/641/129 on the rising edge of CE or WE, whichever occurs first. (7) Periodically sampled, but not 100% tested.10X84161/641/129CE Controlled Write CycleWE Controlled Write CycleX84161/641/129X84161/641/1290.014 (0.35)0.019 (0.49)PIN 1 INDEX(4X) 70.0075 (0.19)0.010 (0.25)3926 FRM F22.18-LEAD PLASTIC SMALL OUTLINE GULL WING P ACKAGE TYPE SNOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)X84161/641/129PACKAGING INFORMATION3926 FRM F260.014 (0.35)0.020 (0.51)(4X) 714-LEAD PLASTIC SMALL OUTLINE GULL WING P ACKAGE TYPE SNOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)0.0075 (0.19)0.010 (0.25)X84161/641/129PACKAGING INFORMATIONNOTE:ALL DIMENSIONS IN INCHES (IN P ARENTHESES IN MILLIMETERS)8-LEAD PLASTIC, TSSOP , PACKAGE TYPE V0° – 8°Gage PlaneSeating PlaneDetail A (20X)X84161/641/129PACKAGING INFORMATIONNOTE:ALL DIMENSIONS IN INCHES (IN P ARENTHESES IN MILLIMETERS)20-LEAD PLASTIC, TSSOP PACKAGE TYPE V3926 FRM F450° – 8Gage PlaneSeating PlaneDetail A (20X)X84161/641/129PACKAGING INFORMATIONNOTE:ALL DIMENSIONS IN INCHES (IN P ARENTHESES IN MILLIMETERS)28-LEAD PLASTIC, TSSOP PACKAGE TYPE V3926 FRM F450° – 8Gage PlaneSeating PlaneDetail A (20X)X84161/641/129ORDERING INFORMATION*PART MARK CONVENTION DeviceXX °C to +70°C °C°C (contact factory)LIMITED WARRANTYDevices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice.Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are implied.U.S. PATENTSXicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and additional patents pending.LIFE RELATED POLICYIn situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prevent such an occurence. Xicor's products are not authorized for use in critical components in life support devices or systems.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustainlife, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure ofthe life support device or system, or to affect its safety or effectiveness.G -XPackages: X84161P = 8-Lead PDIP S8 = 8-Lead SOICV8 = 8-Lead TSSOP X84641P = 8-Lead PDIP S8 = 8-Lead SOICV20 = 20-Lead TSSOP X84129P = 8-Lead PDIP S14 = 14-Lead SOIC V28 = 28-Lead TSSOP8-Lead TSSOPAG = 1.8 to 3.6V, 0 to +70°CEYWW 8161XXG AH = 1.8 to 3.6V, -40 to +85°C F = 2.5 to 5.5V, 0 to +70°CG = 2.5 to 5.5V, -40 to +85°C Blank = 4.5 to 5.5V, 0 to +70°CI = 4.5 to 5.5V, -40 to +85°C8-Lead SOIC/PDIPX84641 XG XXBlank = 8-Lead SOIC AG = 1.8 to 3.6V, 0 to +70°CAH = 1.8 to 3.6V, -40 to +85°C F = 2.5 to 5.5V, 0 to +70°C G = 2.5 to 5.5V, -40 to +85°CBlank = 4.5 to 5.5V, 0 to +70°C I = 4.5 to 5.5V, -40 to +85°CP = 8-Lead PDIPG = RoHS compliant lead free *All parts and package types not included will receive standard marking.G = RoHS compliant lead free。
EP3C25Q240C8N中文资料(Altera)中文数据手册「EasyDatasheet - 矽搜」
手术
—
1.15 1.2 1.25
V
—
3.135 3.3 3.465 V
电源电压为输出缓冲器,3.0-V
手术
—
2.85
3
3.15
V
VCCIO (3), (4)
电源电压为输出缓冲器,2.5-V
手术
电源电压为输出缓冲器,1.8-V
手术
电源电压为输出缓冲器,1.5-V
手术
—
2.375 2.5 2.625 V
（4）所有输入缓冲器由在V驱动
供电.
（5）50-200毫秒之间POR时间标准POR范围.每个单独电源应达到在推荐工作范围 50毫秒.
3-9毫秒（6）POR时间,快速POR范围.每个单独电源应在3毫秒达到推荐工作范围内.
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第 1章： Cyclone III器件数据表
表1-2 列出所允许最大输入电压过冲和 过冲电压作为在装置寿命百分比持续时间. 允许最大过冲持续时间被指定为高时间比设备寿命百分比.
Max
Unit
1.8
V
3.9
V
3.75
V
1.8
V
3.95
V
40
mA
±2000
V
±500
V
150
°C
125
°C
表1-2 and
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July 2012 CIII52001-3.5
CIII52001-3.5
1.Cyclone III器件数据表
本章介绍电气特性,开关特性,以及I / O
对Cyclone时机
RC4中文操作手册
手册引导内容提要1介绍1.1手册结构1.2补充文件1.3操作手册使用人群1.4手册中使用的信号和警示1.5使用的方式和缩写1.6版本附件2设备描述2.1目的2.2潜在的危险3总述3.1电源3.2外加24VDC3.3使用的电缆型号3.4安全须知3.4.1Congrav RC-4使用安全须知3.4.2安装安全须知3.4.3接线安全须知3.4.4使用和操作安全须知4硬件描述4.1Congrav RC-4：类型4.2Congrav RC-4A：显示和按键4.2.1集成按键及其功能4.2.2显示和功能组成4.3参数更改4.3.1数字输入4.3.2固定参数设置的选择4.3.3如果….，更改参数不被接受4.4Congrav RC-4B：4.5Congrav RC-4的插卡槽4.5.1现场的可能连线4.6Congrav RC-4的基本功能4.6.1插入卡RC4-MSIO4.6.1.1XS1.1：与主计算机的连接4.6.1.2XS1.2：与ISC现场总线的连接4.6.1.3XS1.3：与调试解调器和工控电脑的连接4.7Congrav RC-4的选项卡4.7.1CDIO插入卡4.7.2DIOP插入卡4.7.2.1输入输出模式－数字式RC-4的终端功能4.7.3ANOP插入卡4.7.3.1输入输出模式－模拟式RC-4的终端功能4.7.4Profibus模式5调试5.1安装5.2调试，Congrav RC-4的开机5.3Congrav RC-4：软件升级5.4ISC-CM：软件升级6菜单页F100安装结构6.1F110：安装模式6.2模拟结构6.3F120：主计算机操作6.4F130：显示内容改变6.5连锁停机6.6时间和日期6.7F150：配方处理6.7.1设定值斜线，设定值阈值6.7.2调试操作7F200：打印机结构，内存值重设7.1打印功能7.2F210：如何清除记忆内容8F300：设定值输入和选择8.1安装设定值8.2加料器设定值8.2.1`设定值的模拟控制8.2.2设定值斜线，设定值阈值（菜单页F150）8.3选项8.4F310：滞后时间8.5报警停机9F400：安装的实际值，总产量重设9.1F430：总产量重设10单台加料器操作10.1加料器页的抬头10.2Kxx0：加料器控制10.3操作功能10.3.1开机5410.3.2停机5410.3.3报警重设10.3.4补料5510.3.5删除5510.3.6开始试样10.3.7开始去皮10.3.8右侧行实际值的显示10.4Kxx1：产品参数10.4.1自动去皮10.4.2检查最大输出10.4.3堆积密度10.4.4体积最大输出10.4.5十进制转换10.4.5.1十进制转换的设置10.4.6模式5910.4.6.1失重式加料（GF）10.4.6.2体积式控制（VR）10.4.6.3体积式设置（VS）10.4.6.4排料（DI）10.4.6.5检查最大输出（CM）10.4.6.6重量式排料（GD）10.4.6.7体积式加料（VF）10.4.6.8测量（M）10.4.6.9运行过程中GF和VF模式转换10.5Kxx2：控制参数10.5.1PID控制的设置10.5.1.1控制成套配合10.5.1.2重量式计算最大输出10.5.1.2.1CM值的存储11F500：报警报告和开机条件11.1报警报告11.2缺省的开机条件11.3系列驱动控制操作的错误代码11.3.1系列变频器11.3.2振动放大器控制器ISC-VC 11.4Kxx5：报警结构12硬件结构12.1 Kxx8：ISC-CM(-A)的硬件结构12.1.1 速度输入12.1.2 传感器（重量读取）的结构12.1.3 驱动控制器12.1.4 ISC-CM-A模拟输入输出的结构12.1.4.1 ISC-CM-A上单台控制的选项12.1.4.2 Kxx8：模拟输入12.1.4.3 Kxx8：模拟输出12.2 ANOP模拟输入输出的结构12.2.1 安装控制和安装的实际值12.2.1.1 菜单页F190的参数12.2.2 ANOP的组分功能12.2.2.1 模拟输入：模拟单台控制12.2.2.2 模拟输出：总操纵量或实际值12.2.2.2.1 模拟输出信号范围的定义12.3 CDIO的数字输入输出12.4 DIOP的数字输入输出12.4.1 DIOP：功能描述12.5 ISC现场总线机构12.5.1 如果构建总线通讯12.5.2 总线通讯的关闭12.6 调试解调器的机构12.7 主计算机操作机构12.7.1 MISO卡上的主计算机接口12.7.2 Profibus DP操作结构12.7.3 以太网接口的结构13校正程序13.1加料器参数13.2加料器参数功能解释13.2.1CP02－加料范围13.2.2CP04－欠载13.2.3CP03－最大输出量13.2.4CP05－过载13.2.5CP06－粗去皮13.2.6CP07－平均重量取数13.2.7CP08－总产量累计分值13.2.8CP09－最小速度13.2.9CP010－最大速度13.2.10CP11－控制偏差13.2.11CP12－报警停机滞后时间13.2.12CP13－联锁类型13.2.13CP14－实际值指示13.2.14CP15－杠杆臂值13.2.15CP16－料斗内容13.2.16CP17－最小补料料位13.2.17CP18－最大补料料位13.2.18CP19－Window/K1/滤波IDL/F, AED 13.2.19CP20－数字速度13.2.19.1标准速度监控13.2.19.2FlexWall-Plus加料器的运动监控13.2.19.3数字式速度取数13.2.19.4推荐输入13.2.20CP21－最大补料时间13.2.21CP22－补料优化13.2.22CP23－稳定时间13.2.23CP24－测样时间13.2.24CP25－防振（A V）切断时间13.2.25CP26－PID控制器接近时间13.2.26CP27－控制器自动化13.2.26.1控制器自动化13.2.26.2开机自动化13.2.26.2.1重复的开机自动化13.2.26.2.2总体开机自动化13.2.27CP28－滤波限制13.2.28CP29－实际值的接纳13.2.29CP30－总操纵量的接纳13.2.30CP31－体积控制（VR）实际值的接纳13.2.31CP32－开机滞后时间13.2.32CP33－称重桥（LWB）的长度13.2.33CP34－重量测试值（WTV）13.2.34CP35－摄取（AP）13.2.35CP36－自动去皮范围13.2.36CP37－无负载时间自动去皮13.2.37CP38－有比例的皮带速度13.2.38CP39－皮带长度13.2.39CP40－dead time way13.3附加参数13.3.1AP01－05 校正13.3.2AP11－可用的称重范围13.3.3AP12－drop out13.3.4AP13－速度模式13.3.5AP14－滑动影响13.3.6AP15－滑动值13.3.7AP16－速度接纳性13.3.8AP17－无负载时间13.3.9AP18－AT时间13.3.10AP19－驱动控制2最小13.3.11AP20－驱动控制2最大14硬件测试功能14.1F140：输入输出测试－外围（安装）14.2Kxx3：输入输出状态显示－外围14.3Kxx4：测试功能和模拟14.3.1模拟模式14.3.2输入输出测试（加料器）15名词解释附件11915.1技术数据15.2电磁兼容性15.3零配件清单15.4可能显示的模式清单15.5菜单页清单插图表图4-1：Congrav RC-4后部视图图4-2：Congrav RC-4后部视图（带ProfiBus模式）1 总介绍1.1手册的结构现有的操作手册包括：RC－4的：●技术操作和●RC－4 HGC软件（其版本请参见封页）按照下列顺序，每章独立描述一个完整的主题：●设备的描述●使用特性●硬件执行●硬件功能定义●操作●软件描述●参数描述和●结构例举1.2附加文件●ISC系统的描述●ISC-CM,ISC-FC和ISC-VC的技术手册●相应主计算机程序手册1.3操作手册所适用的人群操作手册适用于以下两组人群：●经过授权和培训过的专业技术人员来进行安装和其它电气工作。