5082-K513-FF500中文资料
2SK3523-01R中文资料
100
10
1
0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V]
Maximum Avalanche Energy vs. starting Tch E =f(starting Tch):Vcc=50V
AS 1000
800 I =10A AS
VDS=500V VGS=0V
VDS=400V VGS=0V VGS=±30V VDS=0V ID=10.5A VGS=10V
Tch=25°C Tch=125°C
ID=10.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=10.5A
VGS=10V
RGS=10 Ω
VCC=300V ID=21A VБайду номын сангаасS=10V L=987µH Tch=25°C IF=21A VGS=0V Tch=25°C IF=21A VGS=0V -di/dt=100A/µs Tch=25°C
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt Max. power dissipation
dV/dt *3 PD Ta=25°C
Tc=25°C
5 3.125 160
FQPF13N50中文资料
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 9.3mH, I AS = 12.5A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 6.25 A--0.330.43Ωg FSForward TransconductanceV DS = 50 V, I D = 6.25 A--10--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V,f = 1.0 MHz--18002300pF C oss Output Capacitance--245320pF C rssReverse Transfer Capacitance--2535pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 13.4 A,R G = 25 Ω--4090ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --100210ns t f Turn-Off Fall Time --85180ns Q g Total Gate Charge V DS = 400 V, I D = 13.4 A,V GS = 10 V--4560nC Q gs Gate-Source Charge --11--nC Q gdGate-Drain Charge--22--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----12.5A I SM Maximum Pulsed Drain-Source Diode Forward Current----50A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 12.5 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 13.4 A,dI F / dt = 100 A/µs--290--ns Q rrReverse Recovery Charge--2.6--µC(Note 4) (Note 4, 5)(Note 4, 5)(Note 4)DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In Design First ProductionFull ProductionNot In ProductionImpliedDisconnect ISOPLANARLittleFETMicroFETMicroPakMICROWIREMSXMSXProOCXOCXProOPTOLOGIC âOPTOPLANARFACT FACT Quiet Series FAST âFASTr FRFET GlobalOptoisolator GTO HiSeCI 2CRev. I2ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2CMOS TM EnSigna TMPACMANPOP Power247 PowerTrench âQFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER âSMART START SPMStealthSuperSOT -3SuperSOT -6SuperSOT -8SyncFET TinyLogic âTruTranslation UHC UltraFET âVCXAcross the board. Around the world. The Power FranchiseProgrammable Active Droop。
FQPF13N50CF中文资料
Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristicsf = 1.0MHzC oss Output Capacitance--180235pF C rss Reverse Transfer Capacitance --2025pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 250V, I D = 13A R G = 25Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400V, I D = 13A V GS = 10V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gd Gate-Drain Charge--18.5--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current ----52A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 13A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 13AdI F /dt =100A/µs (Note 4)--100160ns Q rrReverse Recovery Charge--0.35--µCUnclamped Inductive Switching Test Circuit & WaveformsLIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I19。
FF450R12KE4中文资料
Diode-Wechselrichter / diode-inverter
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100 200 300 400 500 600 700 800 900
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4
元器件交易网
Technische Information / technical information
IGBT-Module IGBT-modules
FF450R12KE4
3- ( 7) 81 ,-. ( J ,1 V/ ( O ,B. ( X ) ,1 D ( > 8DL U%&'( ) *+W B54 ( 1 N
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Vorläufige Daten preliminary data
MFRC500中文资料
MFRC500中⽂资料MF RC500-⾼集成ISO14443A读卡芯⽚1 通⽤信息1.1 范围该⽂档讲述了MF RC500的功能包括功能及电⽓规格并给出了如何从系统和硬件的⾓度使⽤该芯⽚进⾏设计的细节1.2 概述MF RC500是应⽤于13.56MHz⾮接触式通信中⾼集成读卡IC系列中的⼀员该读卡IC系列利⽤了先进的调制和解调概念完全集成了在13.56MHz下所有类型的被动⾮接触式通信⽅式和协议MF RC500⽀持ISO14443A所有的层内部的发送器部分不需要增加有源电路就能够直接驱动近操作距离的天线可达100mm接收器部分提供⼀个坚固⽽有效的解调和解码电路⽤于ISO14443A兼容的应答器信号数字部分处理ISO14443A帧和错误检测奇偶CRC此外它还⽀持快速CRYPTO1加密算法⽤于验证MIFARE系列产品⽅便的并⾏接⼝可直接连接到任何8位微处理器这样给读卡器/终端的设计提供了极⼤的灵活性1.3 特性y ⾼集成度模拟电路⽤于卡应答的解调和解码y 缓冲输出驱动器使⽤最少数⽬的外部元件连接到天线y 近距离操作(可达100mm)y ⽀持MIFARE双接⼝卡IC和ISO14443A14部分y 加密并保护内部⾮易失性密匙存储器y 并⾏微处理器接⼝带有内部地址锁存和IRQ线y 灵活的中断处理y ⾃动检测微处理器并⾏接⼝类型y ⽅便的64字节发送和接收FIFO缓冲区y 带低功耗的硬件复位y 软件实现掉电模式y 可编程定时器y 唯⼀的序列号y ⽤户可编程的启动配置y 位和字节定位帧y 数字模拟和发送器部分各⾃独⽴的电源输⼊脚y 内部振荡器缓冲连接13.56MHz⽯英晶体低相位抖动y 时钟频率滤波y 短距离应⽤中发送器天线驱动器为3.3V操作2 ⽅框图图2-1 MF RC500⽅框图3 管脚信息3.1 管脚配置下图所⽰⽤⿊体字母标注的管脚由A VDD和A VSS供电⿊线所标的管脚由TVSS和TVDD供电其它管脚由DVDD和DVSS供电I输出PWR符号类型描述振荡器反相放⼤器输⼊输出中断事件请求信号接⼝输⼊发送经过调制的发送器电源发送经过调制的发送器地提供选择和激活NWR I写MF RC500寄存器写⼊数据D0~D7 R/NW I //写选择所要执⾏的是读还是写nWrite I 写选择所要执⾏的是读还是写NRD I读寄存器读出数据D0~D7 NDS I数据选通读和写周期的选通读和写周期的选通为⾼时将为低时选通信号将地址选通为低时选通信号将寄存器地址位信号为低可以开始⼀个存取周期地址线1寄存器地址位寄存器地址位数字电源该脚输出模拟测试信号接收器输⼊卡应答输⼊脚该应答为经过天线电路耦合的调制内部参考电压该脚输出内部参考电压复位和掉电当为⾼时内部灌电流关闭振荡器停⽌输⼊端与外部断开该管脚的下降沿启动内部复位振荡器反向放⼤器输出表3-1 MF RC500管脚描述4 并⾏接⼝4.1 所⽀持的微处理器接⼝概述 MF RC500⽀持与不同的微处理器直接接⼝可与个⼈电脑的增强型并⼝EPP直接相连下表所⽰为MF RC500所⽀持的并⼝信号总线控制信号总线独⽴的地址和数据总线复⽤的地址和数据总线控制 NRD NWR NCS NRD NWR NCSALE地址 A0,A1,A2 AD0,AD1,AD2,AD3,AD4,AD5 独⽴的读和写选通信号数据D0 … D7AD0 … AD7控制 R/NW,NDS,NCSR/NW,NDS,NCS,AS地址 A0,A1,A2 AD0,AD1,AD2,AD3,AD4,AD5 共⽤的读和写选通信号数据D0 … D7AD0 … AD7控制 nWrite,nDStrb,nAStrb,nWait地址 AD0,AD1,AD2,AD3,AD4,AD5 带握⼿的共⽤读和写选通信号EPP数据AD0 … AD7表4-1 所⽀持的并⼝信号4.2 微处理器接⼝类型⾃动检测在每次上电或硬复位后 MF RC500也复位其并⾏微处理器接⼝模式并检测当前微处理器接⼝的类型MF RC500在复位阶段后根据控制脚的逻辑电平识别微处理器接⼝这是由固定管脚连接的组合见下表和⼀个专门的初始化程序实现的见11.44.3 与不同微处理器类型的连接如下表所⽰并⾏接⼝类型独⽴读/写选通共⽤读/写选通MF RC500专⽤地址总线复⽤地址总线专⽤地址总线复⽤地址总线带握⼿的复⽤地址总线ALE HIGH ALEHIGHASnAStrb A2 A2 LOW A2 LOW HIGH A1 A1 HIGH A1 HIGH HIGH A0 A0 HIGH A0 LOW nWait NRD NRD NRD NDS NDS NDStrb NWR NWR NWR R/NW R/NWNWRite NCS NCS NCS NCS NCSLOW D7 … D0D7 … D0AD7 … AD0D7 … D0AD7 … AD0AD7 … AD0表4-24.3.1 独⽴的读/写选通信号图4-1 独⽴的读时序规格参见20.5.2.1章节4.3.2 共⽤的读/写选通信号图4-2 共⽤的读/写选通连接到微处理器时序规格参见20.5.2.2章节4.3.3 带握⼿机制的共⽤读/写选通信号EPP图4-3 带共⽤读/写选通和握⼿机制连接到微处理器时序规格参见20.5.2.3章节EPP备注尽管在EPP的标准中⽆⽚选信号的定义MF RC500的N_CS允许禁⽌nDStrb信号如果不⽤应将其接到DVSS在每次上电或硬复位后nWait信号由A0脚发出为⾼阻态nWait将在复位后nAStrb上的第⼀个下降沿时定义MF RC500不⽀持读地址周期5 MF RC500寄存器集合5.1 MF RC500寄存器概述和停⽌字节缓冲区输⼊和输出接收器和发送器以及例如定时器显⽰上次命令执⾏错误状态的错误标志MF RC500寄存器集(续)接收器启动前的时间间隔信道上数据完整性检测的类型和模式表5-1 MF RC500寄存器汇总5.1.1 寄存器位状态不同的寄存器的位和标志的状态是不同的这取决于它们的功能原则上具有相同状态的位都归类到共⽤的寄存器中状态这些位可通过微处理器读和写因此它们的内容不会例如TimerReload寄存器可通过微处理器读写还会被内部状态机读取但不会改变它们这些位可通过微处理器读和写例如寄存器在执⾏完实际的命令后⾃动改变它的值这些寄存器保存标志其值仅由内部状态决定ErrorFlag状态但不能通过外部写⼊这些寄存器仅⽤于控制⽅式它们可通过微处理器写⼊但不能读出读这些寄存器会返回不确定的值TestAnaSelect脚的信号是不可能读出它的内容表5-2 寄存器位的状态和设计5.2 寄存器描述5.2.1 页0命令和状态5.2.1.1 Page寄存器选择寄存器页名称Page 地址0x00,0x08,0x10,0x18,0x20,0x28,0x30,0x38 复位值1000000,0x807 6 5 4 3 2 1 0R/W R/W R/W R/W R/W R/W R/W R/W 位描述PageSelect低位由地址脚或内部地址锁存单独定义内部地址所处的整个内容定义寄存器地址4-2此情况下它指定寄存器页5.2.1.2 Command寄存器启动和停⽌命令的执⾏名称Command 地址0x01 复位值x00000000xx07 6 5 4 3 2 1 0 IFDetect Busy 0 Commandr r dy dy dy dy dy dy位描述显⽰接⼝检测逻辑的状态接⼝检测正在进⾏读该寄存器显⽰实际执⾏的命令5.2.1.3 FIFOData寄存器64字节FIFO缓冲区输⼊和输出名称FIFOData 地址0x02 复位值xxxxxxxx0xxx7 6 5 4 3 2 1 0FIFODatady dy dy dy dy dy dy dy位描述并出的作⽤5.2.1.4 PrimaryStatus寄存器接收器发送器和FIFO缓冲区状态标志名称PrimaryStatus 地址0x03 复位值000001010x05 7 6 5 4 3 2 1 0HiAlertLoAlertErr0 ModemState IRqr r r r r r r r位描述因此它帧起始模式FIFO缓冲区发送数据或冗余检测位当接收器启动时当接收器停⽌时RxWait计数器激活缓冲区内的字节数满⾜下⾯的等式HiAlert=FIFOLength WaterLevel时1FIFOLength=WaterLevel=4 HiAlert=FIFOLength=59中的字节数满⾜下⾯的等式HiAlert=64WaterLevel时1例如 FIFOLength=WaterLevel= 15.2.1.5 FIFOLengthFIFO中的缓冲字节数名称FIFOLength 地址0x04 复位值000000000x007 6 5 4 3 2 1 00 FIFOLengthr r r r r r r r 位描述位符号功能7 0保留将来之⽤6~0 FIFOLengh 指⽰保存在FIFO缓冲区的字节数写⼊FIFOData寄存器增加读减少FIFOLength5.2.1.6 SecondaryStatus寄存器不同的状态标志名称SecondaryStatus 地址0x05 复位值011000000x607 6 5 4 3 2 1 0 TRunning E2Ready CRCReady 0 0 RxLastBits r r r r r r r r 位描述位符号功能7 TRunning 如果为1MF RC500的定时器单元正在运⾏例如计数器会在下个定时器时钟将TimerValue寄存器值减⼀6 E2Ready 如果为1MF RC500已经完成对E2PROM的编程5 CRCReady 如果为1MF RC500已经完成CRC的计算4~3 00 该值不会被改变2~0 RxLastBits 显⽰最后接收字节的有效位个数如果为0整个字节有效5.2.1.7 InterruptEn寄存器使能和禁⽌中断请求通过的控制位名称InterruptEn 地址0x06 复位值000000000x007 6 5 4 3 2 1 0LoAlertIEn SetIEn 0 TimerEn TxIEn RxIEn IdleIEn HiAlertIEnw r/w r/w r/w r/w r/w r/w r/w位描述该位清零将清除标记的位允许将定时器中断请求由传递给脚IRQ除了通过外该位不能直接置位或清零允许将发送器中断请求由TxIRq传递给脚IRQ外该位不能直接置位或清零允许将接收器中断请求由RxIRq指⽰传递给脚除了通过外该位不能直接置位或清零允许将中断请求由IdleIRq传递给脚IRQ除了通过外该位不能直接置位或清零中断请求由HiAlertIRq指⽰传递给脚IRQ除了通过外该位不能直接置位或清零允许将中断请求LoAlertIRq指⽰传递给脚IRQ除了通过外该位不能直接置位或清零5.2.1.8 InterruptRq寄存器中断请求标志名称InterruptRq 地址0x07 复位值000000000x007 6 5 4 3 2 1 0LoAlertIRqHiAlertIRqIdleIRqSetIRq 0 TimerIRqTxIRq RxIRqw r/w dy dy dy dy dy dy位描述设置为1定义在InterruptRq寄存器中置1的位设置为0清除InterruptIRq中标记的位6 0保留将来之⽤5 TimerIRq当定时器TimerValue寄存器值减为0时置位4 TxIRq当下列条件之⼀发⽣时置位Transceive命令所有数据都已发送Auth1和Auth2命令所有数据都已发送WriteE2命令所有数据都已编程CalcCRC命令所有数据都已处理3 RxIRq当接收终⽌时该位置位2 IdleIRq当命令由其⾃⾝终⽌时该位置位例如当命令寄存器的值从任何寄存器变为Idle寄存器的值时如果⼀个未知的命令启动IdleIRq置位由微处理器启动Idle命令不置位IdleIRq1 HiAlertIRq当HiAlert置位时该位置位与HiAlert相反HiAlertIRq保存该事件并只能通过SetIRq复位0 LoAlertIRq当LoAlert置位时该位置位LoAlertIRq保存该事件并只能通过SetIRq 复位5.2.2 页1控制和状态5.2.2.1 页寄存器选择寄存器页见5.2.1.15.2.2.2 控制寄存器不同的控制标志例如定时器节电名称Control 地址0x09 复位值000000000x00FlushFIFOTStopNowCrypto1On0 0 StandByPowerDownr/w dy dy dy w w w r/w位描述这表⽰内部电流消耗模块关闭晶振保持将该位置这表⽰内部电流消耗模块包括晶振在内关闭3 Crypto1On该位指⽰因此与卡的所有数据通信都被加密⽴即停⽌定时器读该位总是返回读该位总是返回FIFO写指针和5.2.2.3 ErrorFlag寄存器Error标志指⽰上⼀个执⾏命令的错误状态名称ErrorFlag 地址0x0A 复位值000000000x007 6 5 4 3 2 1 0FramingErrParityErrCollErrFIFOOvflCRCErr0 KeyErrAccessErrr r r r r r r r 位描述位符号功能7 0保留将来之⽤6 KeyErr如果LoadKeyE2或LoadKey命令识别出输⼊数据不是根据密匙格式定义编码则将该位置位启动LoadKeyE2或LoadKey命令时该位清零5 AccessErr如果对E2PROM的访问权限被禁⽌该位置位启动与E2PROM相关的命令时该位清零4 FIFOOvfl如果微处理器或MF RC500内部状态机例如接收器试图将数据写⼊FIFO缓冲区⽽FIFO缓冲区已满时该位置位3 CRCErr如果RxCRCEn置位且CRC失败该位置位该位在PrepareRx状态中接收器的启动阶段⾃动清零2 FramingErr如果SOF不正确该位置位该位在PrepareRx状态中接收器的启动阶段⾃动清零1 ParityErr如果奇偶校验失败该位置位该位在PrepareRx状态中接收器的启动阶段⾃动清零0 CollErr如果检测到⼀个位冲突该位置位该位在PrepareRx状态中接收器的启动阶段⾃动清零5.2.2.4 CollPos寄存器RF接⼝上检测到的第⼀个位冲突的位置名称CollPos 地址0x0B 复位值000100110x007 6 5 4 3 2 1 0CollPosr r r r r r r r 位描述位符号功能7~0 CollPos 该寄存器指⽰在接收到的帧中第⼀个检测到的冲突位的位置例0x00指⽰在起始位的位冲突0x01指⽰在第1位的位冲突0x08指⽰在第8位的位冲突5.2.2.5 TimerValue寄存器定时器的实际值名称TimerValue 地址0x0C 复位值XXXXXXXX0xXX7 6 5 4 3 2 1 0TimerValuer r r r r r r r位符号功能7~0 TimerValue 该寄存器显⽰定时器计数器的实际值5.2.2.6 CRCResultLSB寄存器CRC协处理器寄存器低字节名称CRCResultLSB 地址0x0D 复位值XXXXXXXX0xXX7 6 5 4 3 2 1 0CRCResultLSBr r r r r r r r 位描述位符号功能7~0 CRCResultLSB 该寄存器显⽰CRC寄存器低字节的实际值它只在CRCReady设为1时有效5.2.2.7 CRCResultMSB寄存器CRC协处理器寄存器⾼字节名称CRCResultMSB 地址0x0E 复位值XXXXXXXX0xXX7 6 5 4 3 2 1 0CRCResultMSBr r r r r r r r 位描述位符号功能7~0 CRCResultMSB 该寄存器显⽰CRC寄存器⾼字节的实际值它只在CRCReady设为1时有效对于8位CRC校验该寄存器值未定义5.2.2.8 BitFraming寄存器位⽅式帧的调节名称BitFraming 地址0x0F 复位值000000000x007 6 5 4 3 2 1 00 RxAlign 0 TxLastBitsr/w dy dy dy r/w dy dy dy⽤于位⽅式帧的接收更多的位存储到后⾯的位位置RxAlign例RxAlign0接收的第⼆个位存在位1RxAlign1接收的第⼆个位存在位2RxAlign3接收的第⼆个位存在位4RxAlign7注强烈建议不要使⽤7以防⽌数据丢失14223038检测到的位冲突不能通过解决需要软件来实现保留将来之⽤⽤于位⽅式帧的发送TxLastBits000指⽰最后字节的所有位都要发送在发送之后5.2.3 页2发送器和控制5.2.3.1 页寄存器选择寄存器页见5.2.1.15.2.3.2 TxControl寄存器控制天线脚TX1和TX2的逻辑状态名称TxControl 地址0x11 复位值010110000x587 6 5 4 3 2 1 0TX2RFEnTX1RFEnTX2Cw0 ModulatorSource 1 TX2Invr/w r/w r/w r/w r/w r/w r/w r/w位描述调制器的输⼊源低⾼内部编码器11管脚该值不会被改变管脚管脚管脚管脚5.2.3.3 CwConductance寄存器选择天线驱动脚TX1和TX2的电导率名称CwConductance 地址0x12 复位值001111110x3F 7 6 5 4 3 2 1 0 0 0 GsCfgCWr/w r/w r/w r/w r/w r/w r/w r/w 位描述001111117 6 5 4 3 2 1 0000110017 6 5 4 3 2 1 0 注:该寄存器值不会被改变!5.2.3.6 ModWidth寄存器选择调制脉冲的宽度名称ModeWidth 地址0x15 复位值000100110x137 6 5 4 3 2 1 0ModeWidthr/w r/w r/w r/w r/w r/w r/w r/w 位描述5.2.3.7 PreSet16寄存器000000007 6 5 4 3 2 1 0 注该寄存器值不会被改变5.2.3.8 PreSet17寄存器000000007 6 5 4 3 2 1 0 注:该寄存器值不会被改变!5.2.4 页3:接收器和解码器控制5.2.4.1 页寄存器选择寄存器页见5.2.1.15.2.4.2 RxControl1寄存器控制接收器状态名称RxControl1 地址0x19 复位值011100110x737 6 5 4 3 2 1 00 1 1 1 0 0 Gainr/w r/w r/w r/w r/w r/w r/w r/w 位描述5.2.4.3 DecodeControl寄存器名称RxControl1 地址0x1A 复位值000010000x087 6 5 4 3 2 1 00 1 0 0 00 0ZeroAferCollr/w r/w r/w r/w r/w r/w r/w r/w 位描述位符号功能7~6 00 该值不会被改变5 ZeroAferColl 如果设置为1在⼀个位冲突之后的任何位都屏蔽为0这就很容易由ISO14443A中定义的防冲突处理进⾏处理4~0 01000 该值不会被改变5.2.4.4 BitPhase寄存器选择发送器和接收器时钟之间的位相位名称RxControl1 地址0x1B 复位值101011010xAD7 6 5 4 3 2 1 0BitPhaser/w r/w r/w r/w r/w r/w r/w r/w位描述位符号功能7~0 BitPhase 定义发送器和接收器时钟之间的位相位注:该寄存器的正确值对正常操作是⾮常必要的.5.2.4.5 RxThreshold寄存器选择位解码器的阀值名称RxThreshold 地址0x1C 复位值111111110xFF7 6 5 4 3 2 1 0MinLevel CollLevel r/w r/w r/w r/w r/w r/w r/w r/w位描述如果信号⼩于该值将不进⾏计算该信号必须被位达到以产⽣相对于强半位幅度的位冲突5.2.4.6 PreSet1D寄存器000000000x007 6 5 4 3 2 1 05.2.4.7 RxControl2寄存器控制解码器的状态并定义接收器的输⼊源名称RxThreshold 地址0x1E 复位值010*******x417 6 5 4 3 2 1 0RcvClkSell RxAutoPD 0 0 0 0 DecoderSource r/w r/w r/w r/w r/w r/w r/w r/w 位描述1时钟⽤作接收器时钟I-90o相移1接收器电路在接收前⾃动打开并在完成后关闭这样可减少电流的消耗如果设置为0该值不会被改变00011011管脚5.2.4.8 ClockQControl 寄存器控制时钟产⽣⽤于90o相移的Q 信道时钟名称ClockQControl 地址0x1F 复位值000XXXXX0xXX7 6 5 4 3 2 1 0 ClkQ180Deg ClkQCalib 0ClkQDelayr r/w r/w dy dy dy dy dy位描述位符号功能7 ClkQ180Deg 如果Q-时钟与I-时钟的相移超过180o,该位置1,否则为06 ClkQCalib 如果该位为0Q-时钟在复位后和从卡接收数据后⾃动校准5 0 该值不会被改变4~0 ClkQDelay 该寄存器显⽰实际⽤于产⽣I-时钟的90o相移以获得Q-时钟的延迟元素的数⽬它可由微处理器直接写⼊或在校准周期⾃动写⼊5.2.5 页4RF 时序和信道冗余5.2.5.1 页寄存器选择寄存器页见5.2.1.1 5.2.5.2 RxWait 寄存器选择发送后接收器启动前的时间间隔名称ClockQControl 地址0x21 复位值000001010x067 6 5 4 3 2 1 0 RxWaitr/w r/w r/w r/w r/w r/w r/w r/w 位描述位符号功能7~0 RxWait在数据发送后接收器的启动由于RxWait 位时钟⽽延迟在这段帧保护时间内管脚Rx 上的任何信号都被忽略5.2.5.3 ChannelRedundancy 寄存器选择RF 信道上数据完整性检测的类型和模式名称ChannelRedundancy 地址0x22 复位值000000110x037 6 5 4 3 2 1 00 CRCMSB FirstCRC3309CRC8 RxCRCEn TxCRCEn ParityOdd ParityEn r/w r/w r/w r/w r/w r/w r/w r/w。
TM500 中文使用手册
TM500 用户手册-V1.0为了使中国区用户更加容易快捷的使用TM500，本手册提供Step By Step的配置和使用方法, 使得用户轻松上手，节省时间，提高效率。
CN FAE Team：Yushan.li@;Tony.ling@;Klein.jiang@;Eric.liu@如对本手册有任何疑问，请与Eric Liu联系，谢谢！TM500 用户手册-V1.0 (1)主要内容： (3)一．硬件介绍 (3)1. SUE(支持单UE) (3)2. MUE(支持32~64UE) (3)3. EMUE(支持200UE+) (4)4. LED灯指示含义 (4)5. 加电启动 (5)二．测试环境连接 (5)1. SUE & MUE连接方式 (6)2. EMUE连接方式 (6)3. MUE切换的连接方式 (7)4. 射频卡物理连接方式 (8)5. 射频卡注意事项 (8)三．TMA软件介绍 (8)1. TMA软件包 (8)2. 安装FileZilla_Server-x_x_x (8)3. 安装TM500_LTE_T/FDD_PlatC_Release_x_x_x (9)4. 安装后的TMA目录 (9)四．启动配置 (10)1. 如何获取和配置TM500启动信息 (10)2. 控制PC的FTP配置 (11)3. TM500连接配置 (14)4. 如何建立PPPoE连接 (16)五．TM500如何升级？ (20)1. 如何判断TMA软件及固件是否需要升级？ (20)2. 在不升级固件的情况下，如何切换不同版本？ (20)3. TMA软件升级方法 (20)4. TM500固件升级方法 (20)六．License激活方法 (22)七．脚本配置和使用 (23)1. 脚本的导入 (23)2. NAS模式SUE脚本介绍 (24)3. PDCP/RLC/HARQ模式SUE脚本介绍 (27)4. 如何复位TMA界面 (27)5. 如何选取和记录TM500的Log (27)6. 当出现异常时，Trace文件的抓取 (30)7. Advanced Log抓取步骤 (31)八．TM500支持方式 (32)九．参考资料 (32)主要内容：一．硬件介绍正面背面1.SUE(支持单UE)2.MUE(支持32~64UE)3. EMUE(支持200UE+)4. LED 灯指示含义Note：i.后面板任何蓝色的LED灯亮起都代表着板卡正在启动中ii.在TMA连接前，射频卡的I灯是橙色的iii.在TMA连接后，射频卡的I灯是绿色的，且其他亮起的灯也是绿色iv.当射频卡I灯亮起时，需要手动关机重启TM500v.在射频卡固件升级的过程中，会出现红色的灯，请勿担心5.加电启动二．测试环境连接1.SUE & MUE连接方式Note：i.Socket DBG为串口，可用于修改TM500 的IP等配置信息ii.Socket C为控制口，用于连接到控制PC2.EMUE连接方式Note：i.Socket DBG为串口，可用于修改TM500 的IP等配置信息ii.Socket C为控制口，用于连接到控制PCiii.Data entities 用于多UE用户平面数据发送和接收3.MUE切换的连接方式Note：HS3A连接使用CX4 infiniband cable，可以在TM500随机提供的配件中找到4.射频卡物理连接方式a.单频卡(Combined mode)连接方式b.宽频卡(Dedicated mode)连接方式5.射频卡注意事项射频端口最大输入功率为-25dBm在Cable连接下，下行接收RSRP的建议值在-55~-85dBm之间，SNR在30dB 以上，可以获取极好的测试效果TM500 SUE版本支持直接连接天线进行空口测试(OTA)三．TMA软件介绍请使用分配给贵司的FTP账号下载TMA版本，或联系FAE.每个版本都会有TM500 LTE PlatC Customer_Release Note_x_x_x_x, 可以查到此版本增加了哪些新特性和问题改进.1.TMA软件包2.安装FileZilla_Server-x_x_x3.安装TM500_LTE_T/FDD_PlatC_Release_x_x_x4.安装后的TMA目录Note:mand Reference Manual: 描述此版本支持哪些脚本命令ii.Measurement Reference Manual:描述此版本的log解析方法iii.PPPoE Manual:描述如何设置PPPoE的方法四．启动配置1.如何获取和配置TM500启动信息c.串口连接配置: (Baud rate: 9600)d.串口log记录方法请使用Log记录的方式记录串口Log，不要使用选择，Copy的方式e.连接到TM500启动配置串口f.串口输出信息如下g.修改IP地址和FTP配置删除信息使用“.”来删除对于行信息2.控制PC的FTP配置(请一直保持FileZilla Server启动)a.启动FileZilla Server Interface，点击OKb.配置用户信息添加一个FTP账户，并设置密码（账户和密码信息与“四.1.e”读取的信息相同）c.设置FTP下载版本在对应FTP账户下，添加一个Shared folders，终极路径选择到ftp_rootd.设置目录及访问权限选择好Directories，点击Set as home dir，并设置所有的权限，完成。
英飞凌-IGBT模块在焊机应用中的选型
输出功率 结温（Tj）
芯片-外壳温 差∆Tjc
外壳-散热 器热阻 Rthch
散热器(-环境) 热阻Rthha
基板
散热器
壳温（Tc）
外壳-散热器温差∆Tch
散热器温度（Th）
散热器-环境温差 ∆Tha
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Q1
Q3
Q1 t
Q4
Q2
I1
I2
ip
Q4 t
vAB
Vin
0
t
Vin
损耗特点：
vrect 0
Vin/K
t0 t1 t2 t3 t4 t5
t6 t7 t8 t9 t10 t11
IGBT:导通时间长，导通损耗大，开关损耗小；
FWD:续流时间长，导通损耗大；
最佳IGBT芯片：T4芯片
t
t12 t13
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环境温度 （Ta）
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IGBT模块热计算
IGBT模块各个部分的温差∆T取决于 1）损耗（芯片技术、运行条件、驱动条件）； 2）热阻（模块规格、尺寸） 模块芯片的结温是各部分的温差和环境温度之和： Tj = ∆Tjc + ∆Tch + ∆Tha + Ta 如果假设壳温Tc恒定，则Tj = ∆Tjc + Tc； 如果假设散热器温度Th恒定，则Tj = ∆Tjh + Th。 IGBT的平均结温取决于平均损耗、Rthjc和壳温Tc。 在实际运行时，IGBT的结温是波动的，其波动幅度取决于瞬态损耗和 Zthjc， 而Zthjc又和运行条件（如变频器输出频率）有关。 IGBT的峰值结温为平均结温+波动幅值。
rc500中文资料
5.1.1 寄存器位状态
不同的寄存器的位和标志的状态是不同的 这取决于它们的功能 原则上具有相同状态的位都归类到
共用的寄存器中
缩写 状态 描述
r/w 读和写 这些位可通过微处理器读和写 由于它们仅用于控制方式 因此它们的内容不会
被内部状态机影响 例如 TimerReload 寄存器可通过微处理器读写 还会被内部
23 A1
I 地址线 1 寄存器地址位 1
24 A2
I 地址线 2 寄存器地址位 2
25 DVDD PWR 数字电源
26 AVDD PWR 模拟电源
27 AUX
O 辅助输出 该脚输出模拟测试信号 该信号可通过 TestAnaOutSel 寄存器选择
28 AVSS
PWR 模拟地
29 RX
I 接收器输入 卡应答输入脚 该应答为经过天线电路耦合的调制 13.56MHz 载波
13 PreSet13
该值不会改变
14 PreSet14
该值不会改变
15 ModWidth
选择调整脉冲的宽度
16 PreSet16
该值不会改变
17 PreSet17
该值不会改变
18 Page
选择寄存器页
19 RxControl1
控制接收器状态
1A DecodeControl
控制解码器状态
1B BitPhase
I /读 MF RC500 寄存器读出数据 D0~D7 选通
NDS
I /数据选通 读和写周期的选通
nDStrb
I /数据选通 读和写周期的选通
12 DVSS
PWR 数字地
3
管脚 符号 类型 描述
13 D0~D7
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DevicesAlGaAs Orange Red HER Green Package HDSP-HDSP-HDSP-HDSP- DescriptionDrawingA411A111A211A5117.6 mm Common Anode Right Hand Decimal A A413A113A213A5137.6 mm Common Cathode Right Hand Decimal B F411F111F211F51110 mm Common Anode Right Hand Decimal C F413F113F213F51310 mm Common Cathode Right Hand Decimal D G411G111G211G51110 mm Two Digit Common Anode Right Hand Decimal E G413G113G213G51310 mm Two Digit Common Cathode Right Hand Decimal F H411H111H211H51114.2 mm Common Anode Right Hand Decimal G H413H113H213H51314.2 mm Common Cathode Right Hand Decimal H K411K111K211K51114.2 mm Two Digit Common Anode Right Hand Decimal I K413K113K213K51314.2 mm Two Digit Common Cathode Right Hand DecimalJBlack Surface Seven Segment Displays Technical DataFeatures• Black Surface and Color Tinted Epoxy• Industry Standard Size • Industry Standard Pinout • Choice of Character Size 7.6 mm (0.30 in.), 10 mm (0.40in.), 14.2 mm (0.56 in.)• Choice of ColorsAlGaAs Red, High Efficiency Red (HER), Green, Orange • Excellent Appearance Evenly Lighted Segments ±50° Viewing Angle• Design FlexibilityCommon Anode or Common CathodeSingle and Two Digit• Categorized for Luminous IntensityCategorized for Color: Green Use of Like Categories Yields a Uniform Display• Excellent for Long Digit String MultiplexingDescriptionThese devices use industrystandard size package and pinout.Available with black surfaceHDSP-AX11/-AX13 Series HDSP-FX11/-FX13 Series HDSP-GX11/-GX13 Series HDSP-HX11/-HX13 Series HDSP-KX11/-KX13 Seriesfinish. All devices are available as either common anode or common cathode.Typical applications includeappliances, channel indicators of TV, CATV converters, game machines, and point of sale terminals.Part Numbering System5082 -X X X X-X X X X XHDSP-X X X X-X X X X XMechanical Options[1]00: No Mechanical OptionColor Bin Options[1,2]0: No Color Bin LimitationMaximum Intensity Bin[1,2]0: No Maximum Intensity Bin LimitationMinimum Intensity Bin[1,2]0: No Minimum Intensity Bin LimitationDevice Configuration/Color[1]1: Common Anode3: Common CathodeDevice Specific Configuration[1]Refer to Respective DatasheetPackage[1]A: 7.6 mm (0.3 inch) Single Digit Seven Segment DisplayF: 10 mm (0.4 inch) Single Digit Seven Segment DisplayG: 10 mm (0.4 inch) Dual Digit Seven Segment DisplayH: 14.2 mm (0.56 inch) Single Digit Seven Segment DisplayK: 14.2 mm (0.56 inch) Dual Digit Seven Segment Display Notes:1. For codes not listed in the figure above, please refer to the respective datasheet or contact your nearestAgilent representative for details.2. Bin options refer to shippable bins for a part number. Color and Intensity Bins are typically restricted to 1bin per tube (exceptions may apply). Please refer to respective datasheet for specific bin limit information.Package Dimensions (7.6 mm Series)Internal Circuit DiagramPackage Dimensions (10 mm Series: Single)Internal Circuit DiagramPackage Dimensions (10 mm Series: Two Digit)Internal Circuit DiagramPackage Dimensions (14.2 mm Series: Single)Internal Circuit DiagramPackage Dimensions (14.2 mm Series: Two Digit)Internal Circuit Diagram2DIGIT NO. 1 CATHODE1Absolute Maximum RatingsAlGaAs Red HER/Orange GreenHDSP-X11X HDSP-X21X/X41X HDSP-X51X Description Series Series Series Units Average Power per Segment37105105mW or DPPeak Forward Current per4590[1]90[3]mA Segment or DPDC Forward Current per15[5]30[2]30[4]mA Segment or DPOperating Temperature Range–20 to +100 –40 to +100°C Storage Temperature Range–55 to +100°C Reverse Voltage per 3.0V Segment or DPWave Soldering Temperature for250°C 3 Seconds (1.60 mm [0.063 in.]below Body)Notes:1. See Figure 5 to establish pulsed conditions.2. Derate above 53°C at 0.45 mA/°C (see Figure 7).3. See Figure 6 to establish pulsed conditions.4. Derate above 39°C at 0.37 mA/°C (see Figure 7).5. Derate above 91°C at 0.53 mA/°C (see Figure 1).Electrical/Optical Characteristics at T A = 25°CAlGaAs RedDevice SeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions A11X Luminous Intensity/Segment[1,2]I V315600µcd I F = 1 mA (Digit Average)3600I F = 5 mAF11X, G11X330650I F = 1 mA3900I F = 5 mAH11X, K11X400700I F = 1 mA4200I F = 5 mAAll Devices Forward Voltage/Segment or DP V F 1.6 2.0V I F = 1 mA1.7I F = 5 mA1.822I F = 20 mA PeakPeak WavelengthλP EAK645nmDominant Wavelength[3]λd637nmReverse Voltage/Segment or DP[4]V R 3.015V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPA11X Thermal Resistance LED RθJ-PIN255°C/W/Junction-to-Pin Seg.F11X, G11X320H11X, K12X400OrangeDevice SeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions A41X Luminous Intensity/Segment I V0.70mcd I F = 5 mA (Segment Average)[1,2]F41X, G41X 1.0I F = 5 mAH41X, K41X 2.37I F = 10 mAAll Forward Voltage/Segment or DP V F 2.0 2.5V I F = 20 mA DevicesPeak WavelengthλPEAK600nmDominant Wavelength[3]λd603nmReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C–2mV/°CV F/Segment or DPA41X Thermal Resistance LED RθJ-PIN200°C/W/Junction-to-Pin Seg.F41X, G41X320H41X, K41X345High Efficiency RedDevice SeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions A21X Luminous Intensity/Segment[1,2]I V360980µcd I F = 5 mA (Digit Average)5390I F = 20 mAF21X, G21X4201200I F = 5 mAH21X, K21X9002800I F = 10 mA3700I F = 60 mA Peak:1/6 Duty Factor All Forward Voltage/Segment or DP V F 2.0 2.5V I F = 20 mA DevicesPeak WavelengthλPEAK635nmDominant Wavelength[3]λd626nmReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPA21X Thermal Resistance LED RθJ-PIN200°C/W/Junction-to-Pin Seg.F21X, G21X320H21X, K21X345High Performance GreenDevice SeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test ConditionsA51X Luminous Intensity/Segment[1,2]I V8603000µcd I F = 10 mA (Digit Average)6800I F = 20 mAF51X, G51X10303500I F = 10 mAH51X, K51X9002500I F = 10 mA3100I F = 60 mA Peak:1/6 Duty FactorAll Forward Voltage/Segment or DP V F 2.1 2.5V I F = 10 mADevicesPeak WavelengthλPEAK566nmDominant Wavelength[3,5]λd571577nmReverse Voltage/Segment or DP[4]V R 3.050V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPA51X Thermal Resistance LED RθJ-PIN200°C/W/Junction-to-Pin Seg.F51X, G51X320H51X, G51X345Notes:1. Case temperature of device immediately prior to the intensity measurement is 25°C.2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.3. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and is that single wavelength which defines the color ofthe device.4. Typical specification for reference only. Do not exceed absolute maximum ratings.5. Green (HDSP-A51X/F51X/G51X/H512X/K51X) series displays are categorized for dominant wavelength. The category is designated bya number adjacent to the luminous intensity category letter.Figure 3. Relative Luminous Intensity vs. DC Forward Current.Figure 4. Relative Efficiency (LuminousIntensity per Unit Current) vs. Peak Current.Figure 1. Maximum Allowable Average orDC Current vs. Ambient Temperature.Figure 2. Forward Current vs. Forward Voltage.16024681012142010090807060504030T – AMBIENT TEMPERATURE – °C AI A V E . M A X – M A X I M U M A V E R A G E F O R W A R D C U R R E N T P E R S E G M E N T – m AF 1201102018F 50.020.010.05.02.01.00.50.10.51.01.52.02.5V – FORWARD VOLTAGE – VF I – F O R W A R D C U R R E N TP E R S E G M E N T – m A20105210.50.20.10.10.20.51251020R E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D T O 1 A T 1 m A )I – FORWARD CURRENT PER SEGMENT – mAF I – PEAK FORWARD CURRENTPER SEGMENT – mAPEAK η –R E L A T I V E E F F I C I E N C Y – N O R M A L I Z E D T O 1 A T 1 m AP E A K 1.31.21.11.00.90.80.7AlGaAs RedHER, Green, OrangeFigure 7. Maximum Allowable DCCurrent vs. Ambient Temperature.Figure 8. Forward Current vs.Forward Voltage Characteristics.Figure 9. Relative Luminous Intensity vs. DC Forward Current.Figure 10. Relative Efficiency (Luminous Intensity per Unit Current) vs. Peak Current.40051015202530352010090807060504030T – AMBIENT TEMPERATURE – °CA I M A X – M A X I M U M D C C U R R E N T P E R S E G M E N T – m AD C 1201105045010080604020I – F O R W A R D C U R R E N T P E R S E G M E N T – m AF 2.04.03.01.0V –FORWARD VOLTAGE – VF 05.0ηP E A K – R E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D T O 1 A T 5 m A F O R H E R ,A N D T O 1 A T 10 m A F O R G R E E N )150108642205301025I – FORWARD CURRENT PER SEGMENT – mAF 0I – PEAK FORWARD CURRENTPER SEGMENT – mAPEAK ηP E A K – R E L A T I V E E F F I C I E N C Y (N O R M A L I Z E D T O 1 A T 5 m A F O R H E R ,A N D 10 m A F O R G R E E N )Figure 5. Maximum Tolerable Peak Currentvs. Pulse Duration – HER, Orange.Figure 6. Maximum Tolerable Peak Current vs. Pulse Duration – Green.R A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D D C C U R R E N TI P E A K F I M A X D C t – PULSE DURATION – µsP 101100DC R A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D D C C U R R E N TI P E A K FI M A X D C t – PULSE DURATION – µs P 101100DCHDSP-A1xx IV Bin Category Min.Max.E 0.3150.520F 0.4280.759G 0.621 1.16H 0.945 1.71I 1.40 2.56J 2.10 3.84K 3.14 5.75L 4.708.55Intensity Bin Limits (mcd)AlGaAs RedHDSP-F1xx/G1xx IV Bin Category Min.Max.D 0.3910.650E 0.5320.923F 0.755 1.39G 1.13 2.08H 1.703.14HDSP-H1xx/K1xx IV Bin Category Min.Max.C 0.4150.690D 0.5650.990E 0.810 1.50F 1.20 2.20G 1.80 3.30H 2.73 5.00I 4.097.50OrangeHDSP-A41XIV Bin Category MinMaxA 0.2840.433B 0.3540.541C 0.4430.677D 0.5540.846E 0.692 1.057F 0.856 1.322G 1.082 1.652H 1.352 2.066I 1.692 2.581J 2.114 3.227K 2.641 4.034L 3.300 5.042M 4.127 6.303N 5.1577.878HDSP-F41X/G41XIV Bin Category MinMaxC 0.4850.890D 0.728 1.333E 1.091 2.000F 1.636 3.000G 2.454 4.500H 3.6826.751HDSP-H41X/K41XIV Bin Category MinMaxB 0.77 1.17C 0.95 1.45D 1.19 1.82E 1.49 2.27F 1.85 2.89G 2.32 3.54H 2.904.43Intensity Bin Limits (mcd), continued HERMin.Max.B0.3420.630C0.5160.946D0.774 1.418E 1.160 2.127F 1.740 3.190G 2.610 4.785H 3.9157.177Min.Max.C0.4850.890D0.728 1.333E 1.091 2.000F 1.636 3.000G 2.454 4.500H 3.682 6.751Min.Max.E0.91 1.67F 1.37 2.51G 2.05 3.76H 3.08 5.64I 4.628.64J 6.9312.70K10.3919.04Contrast EnhancementFor information on contrast enhancement, please see Application Note 1015.Soldering/CleaningFor information on soldering LEDs, please refer to Application Note 1029.Electrical/OpticalFor more information onelectrical/optical characteristics,please see Application Note 1005.Color CategoriesNote:All categories are established for classification of products. Products may not be available in all categories. Please contact your Agilent representatives for further clarification/information.HDSP-A5xx IV Bin Category Min.Max.H 0.86 1.58I 1.29 2.37J 1.94 3.55K 2.90 5.33L 4.378.01Intensity Bin Limits (mcd), continued GreenHDSP-F5xx/G5xx IV Bin Category Min.Max.H 1.54 2.82I 2.31 4.23J 3.46 6.34K 5.189.50L 7.7814.26HDSP-H5xx/K5xx IV Bin Category Min.Max.E 0.91 1.67F 1.37 2.51G 2.05 3.76H 3.08 5.64I 4.618.46/semiconductors For product information and a complete list of distributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or (916) 788-6763Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 6756 2394India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/Interna-tional), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843Data subject to change.Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5988-1742ENJuly 17, 20045988-4433EN。