2SB857L-X-TN3-T中文资料
2SD669
UNISONIC TECHNOLOGIES CO., LTD2SD669/ANPN SILICON TRANSISTORBIPOLAR POWER GENERAL PURPOSE TRANSISTORAPPLICATIONS* Low frequency power amplifier complementary pair with UTC 2SB649/A*Pb-free plating product number: 2SD669L/2SD669ALORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package1 2 3 Packing 2SD669-x-AA3-R 2SD669L-x-AA3-R SOT-223 B C E Tape Reel2SD669-x-AB3-R 2SD669L-x-AB3-R SOT-89 B C E Tape Reel 2SD669-x-T60-K 2SD669L-x-T60-K TO-126 E C B Bulk 2SD669-x-T6C-R 2SD669L-x-T6C-R TO-126C E C B Bulk 2SD669-x-T92-B 2SD669L-x-T92-B TO-92 E C B Tape Box 2SD669-x-T92-K 2SD669L-x-T92-K TO-92 E C B Bulk 2SD669-x-T9N-B 2SD669L-x-T9N-B TO-92NL E C B Tape Box 2SD669-x-T9N-K 2SD669L-x-T9N-K TO-92NL E C B Bulk 2SD669-x-T9N-R 2SD669L-x-T9N-R TO-92NL E C B Tape Reel 2SD669-x-TM3-T 2SD669L-x-TM3-T TO-251 E C B Tube 2SD669-x-TN3-R 2SD669L-x-TN3-R TO-252 B C E Tape Reel 2SD669-x-TN3-T 2SD669L-x-TN3-T TO-252 B C ETubeORDERING INFORMATION(Cont.)Order Number Pin AssignmentNormalLead Free Plating Package1 2 3 Packing 2SD669A-x-AA3-R 2SD669AL-x-AA3-R SOT-223 B C E Tape Reel2SD669A-x-AB3-R 2SD669AL-x-AB3-R SOT-89 B C E Tape Reel 2SD669A-x-T60-K 2SD669AL-x-T60-K TO-126 E C B Bulk 2SD669A-x-T6C-R 2SD669AL-x-T6C-R TO-126C E C B Bulk 2SD669A-x-T92-B 2SD669AL-x-T92-B TO-92 E C B Tape Box 2SD669A-x-T92-K 2SD669AL-x-T92-K TO-92 E C B Bulk 2SD669A-x-T9N-B 2SD669AL-x-T9N-B TO-92NL E C B Tape Box 2SD669A-x-T9N-K 2SD669AL-x-T9N-K TO-92NL E C B Bulk 2SD669A-x-T9N-R 2SD669AL-x-T9N-R TO-92NL E C B Tape Reel 2SD669A-x-TM3-T 2SD669AL-x-TM3-T TO-251 E C B Tube 2SD669A-x-TN3-R 2SD669AL-x-TN3-R TO-252 B C E Tape Reel 2SD669A-x-TN3-T 2SD669AL-x-TN3-T TO-252 B C E TubeABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage V CBO 180 V2SD669 120Collector-Emitter Voltage 2SD669A V CEO 160VEmitter-Base Voltage V EBO 5 V Collector Current I C 1.5 A Collector Peak Current l C(PEAK) 3 A Collector Power Dissipation SOT-223 0.5 WCollector Power Dissipation TO-126 P D1 W Junction Temperature T J +150Storage Temperature T STG -40 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector to Base Breakdown Voltage BV CBO I C =1mA, I E =0 180 V 2SD669 120Collector to Emitter Breakdown Voltage 2SD669A BV CEO I C =10mA, R BE =∞ 160 VEmitter to Base Breakdown Voltage BV EBO I E =1mA, I C =0 5 V Collector Cut-off Current I CBO V CB =160V, I E =0 10 µAh FE1 V CE =5V, I C =150mA (Note) 60 320DC Current Gainh FE2 V CE =5V, I C =500mA (Note)30 Collector-Emitter Saturation Voltage V CE(SAT)I C =600mA, I B =50mA (Note) 1 V Base-Emitter Voltage V BE V CE =5V, I C =150mA (Note) 1.5 V Current Gain Bandwidth Product f T V CE =5V, I C =150mA (Note) 140 MHz Output Capacitance C ob V CB =10V, I E =0, f=1MHz 14 pF Note: Pulse test.CLASSIFICATION OF h FE1RANK B C DRANGE 60-120 100-200 160-320TYPICAL CHARACTERISTICS1501001502002503001310301003001,0003,000Collector C urrent, I C (mA)D C C u r r e n t T r a n s f e r R a t i o , h F EDC Current Transfer Ratio vs. Collector CurrentCollector to Emitter Saturation Voltagevs. Collector Current 1310301003001,000Collector C urrent, I C (mA)0.20.40.60.81.01.2C o l l e c t o r t o e m i t t e r s a t u r a ti o n v o l t a g e , V C E (S A T ) (V)1310301003001,00000.20.40.60.81.01.2Collector C urrent, I C (mA)Base to Emitter Saturation Voltagevs. Collector Current B a s e t o E m i t t e r S a t u r a t i o nV o l t a g e , V B E (S A T ) (V )10301003001,000Collector Current,I C (mA)04080120160200240G a i n B a n d w i d t h P r o d u c t , f T (M H z )Gain Bandwidth Product vs. Collector Current151********225102050100200Collector to Base Voltage, V CB (V)Collector Output Capacitance vs. Collector to Base VoltageC o l l e c t o r O u t p u t C a p a c i t a n c e ,C o b (p F )Area of Safe OperationCollector to Emitter Voltage, V CE (V)131010030030C o l l e c t o r C u r r e n t , I C (A )TYPICAL CHARACTERISTICS(Cont.)Base to Emitter Voltage , V BE (V)0.20.40.60.8 1.0125102050100200500Typical Transfer CharacteristicsC o l l e c t o r C u r r e n t , I C (m A )。
2SB857L-C-T6C-R中文资料
UNISONIC TECHNOLOGIES CO., LTD2SB857PNP SILICON TRANSISTORSILICON PNP TRANSISTORDESCRIPTIONLow frequency power amplifier.*Pb-free plating product number: 2SB857LORDERING INFORMATIONOrder Number Pin AssignmentNormalLead Free Plating Package 1 2 3 Packing2SB857-x-T6C-K 2SB857L-x-T6C-K TO-126C E C B Bulk 2SB857-x-TN3-R 2SB857L-x-TN3-R TO-252 B C E Tape Reel 2SB857-x-TN3-T 2SB857L-x-TN3-T TO-252 B C E TubeABSOLUTE MAXIMUM RATING (Ta=25 )PARAMETER SYMBOL RATINGS UNITCollector-Base Voltages V CBO -130 V Collector-Emitter Voltage V CEO -100 V Emitter-Base Voltage V EBO -5 V Collector Current I C -4 A Collector Current (I C Peak) I C(PEAK) -8 ATO-126C 1.5 WTotal Power Dissipation TO-252 P D1.9 WJunction Temperature T J +150 Storage Temperature T STG -40 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25 )PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BV CBO I C =-10µA, I E =0 -130 V Collector-Emitter Breakdown Voltage BV CEO I C =-50mA, I B =0 -100 V Emitter-Base Breakdown Voltage BV EBO I E =-10µA, I C =0 -5 V Collector-Emitter Saturation Voltage *V CE(SAT)I C =-2A, I B =-0.2A -1 V Base-Emitter Saturation Voltage *V BE(ON)V CE =-4V, I C =-1A -1 V Collector Cut-off Current I CBO V CB =-130V, I C =0 -1 µA*h FE1 V CE =-4V, I C =-0.1A 35DC Current Gain*h FE2 V CE =-4V, I C =-1A60 320 Transition Frequency f T V CE =-4V, I C =-500mA, f=100MHz 15 MHz Note *Pulse Test: Pulse Width 380 µS, Duty Cycle 2%.CLASSIFICATION OF h FE2CLASSIFICATION BC DRANGE 60 ~ 120100 ~ 200 160 ~ 320TYPICAL CHARACTERISTICS110100h FE vs. Collector CurrentCollector Current (mA)h F ESaturation Voltage v s. Collector CurrentCollector Current (mA)On Voltage vs. Collector CurrentCollector Current (mA)O n V o l t a g e (m V )Capacitance v s. Reverse-Biased VoltageReverse-Biased Voltage (V)C a p a c i t an c e (p F )Safe Operating AreaForward Voltage , V CE (V)C o l l e c t o r C u r r e n t , I C (A )。
B649-A[1]资料——引脚分布及参数
![B649-A[1]资料——引脚分布及参数](https://img.taocdn.com/s3/m/2a0cb93b376baf1ffc4fadc1.png)
UNISONIC TECHNOLOGIES CO., LTD2SB649/APNP SILICON TRANSISTORBIPOLAR POWER GENERAL PURPOSE TRANSISTORAPPLICATIONS* Low frequency power amplifier complementary pair with UTC 2SB669/A*Pb-free plating product number: 2SB649L/2SB649ALORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package1 2 3 Packing 2SB649-x-AB3-R 2SB649L-x-AB3-R SOT-89 B C E Tape Reel2SB649-x-T6C-K 2SB649L-x-T6C-K TO-126C E C B Bulk 2SB649-x-T60-K 2SB649L-x-T60-K TO-126 E C B Bulk 2SB649-x-T92-B 2SB649L-x-T92-B TO-92 E C B Tape Box 2SB649-x-T92-K 2SB649L-x-T92-K TO-92 E C B Bulk 2SB649-x-TN3-R 2SB649L-x-TN3-R TO-252 B C E Tape Reel 2SB649-x-TN3-T 2SB649L-x-TN3-T TO-252 B C E Tube 2SB649A-x-AB3-R 2SB649AL-x-AB3-R SOT-89 B C E Tape Reel 2SB649A-x-T6C-K 2SB649AL-x-T6C-K TO-126C E C B Bulk 2SB649A-x-T60-K 2SB649AL-x-T60-K TO-126 E C B Bulk 2SB649A-x-T92-B 2SB649AL-x-T92-B TO-92 E C B Tape Box 2SB649A-x-T92-K 2SB649AL-x-T92-K TO-92 E C B Bulk 2SB649A-x-TN3-R 2SB649AL-x-TN3-R TO-252 B C E Tape Reel 2SB649A-x-TN3-T 2SB649AL-x-TN3-T TO-252 B C ETubeABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL RATING UNITCollector-Base Voltage V CBO -180 V2SB649-120Collector-Emitter Voltage 2SB649A V CEO -160VEmitter-Base Voltage V EBO -5 V Collector Current I C -1.5 A Collector Peak Current l C(PEAK)-3 ATO-126/TO-126C 1.4 W TO-92 1 WSOT-89 500 mW Collector Power Dissipation TO-252 P D2 WJunction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector to Base Breakdown Voltage BV CBO I C =-1mA, I E =0 -180 V 2SB649 -120Collector to Emitter Breakdown Voltage 2SB649A BV CEO I C =-10mA, R BE =∞-160 V Emitter to Base Breakdown Voltage BV EBO I E =-1mA, I C =0 -5 V Collector Cut-off Current I CBO V CB =-160V, I E =0 -10µAh FE1 V CE =-5V, I C =-150mA (note) 60 3202SB649 h FE2 V CE =-5V, I C =-500mA (note) 30h FE1 V CE =-5V, I C =-150mA (note) 60 200DC Current Gain2SB649A h FE2 V CE =-5V, I C =-500mA (note) 30Collector-Emitter Saturation Voltage V CE(SAT)Ic=-600mA, I B =-50mA -1 V Base-Emitter Voltage V BE V CE =-5V, I C =-150mA -1.5V Current Gain Bandwidth Product f T V CE =-5V,I C =-150mA 140 MHz Output Capacitance Cob V CB =-10V, I E =0, f=1MHz 27 pF Note: Pulse test.CLASSIFICATION OF h FERANK B C D RANGE 60-120 100-200 160-320TYPICAL CHARACTERISTICS=2WC oll ec to rCu r r e nt ,I C(A)C o l l e c t o r C u r r e n t , I C (m A )1310301003001,00000.20.40.60.81.01.2Collector Current, I C (mA)Base to Emitter Saturation Voltagevs. Collector Current B a s e t o E m i t t e r S a t u r a t i o n V o l t a g e , V B E (S A T ) (V )10301003001,000Collector Current, I C (mA)04080120160200240G a i n B a n d w i d t h P r o d u c t , f T (M H z )Gain Bandwidth Product vs. Collector Current V Ta=25TYPICAL CHARACTERISTICS(Cont.)-1-10-30-100-325102050100200Collector to Base Voltage, V CB (V)Collector Output Capacitance vs. Collector to Base VoltageC o l l e c t o r Ou tp ut C a p ac i t an ce ,C o b (p F )C o l l e c t o r C u r r e n t , I C (A )。
变压器型含义大全.doc
V的意思是一次额定电压，0.4KV意思是二次额定电压。2：电力变压器产品型号其它
的字母排列顺序及涵义。（1）绕组藕合方式，涵义分：独立（不标）；自藕（0表示）。
（2 ）相数，涵义分：单相（D）；三相（S）。（3）绕组外绝缘介质，涵义分；变压器
注：电力变压器后面的数字部分：斜线左边表示额定容量（千伏安）；斜线右边 表示一次侧额定电压（千伏）。
例如SJL-1000/L0,为三相油浸自冷式铝线、双线圈电力变压器，额定容量 为1000千伏安、高压侧额定电压为10千伏
电力变压器的型号表示方法：基本型号+设计序号Y页定容量（KVA）/高压侧电压
例如2:S 7-315/10变压器
110: —次侧额定电压110kV
变压器型号含义
干式变压器；例如，（SCB10 — 1000KVA/10KV/0 . 4KV）:S的意思表
示此变压器为三相变压器，如果S换成D则表示此变压器为单相。C的意思表示此
变压器的绕组为树脂浇注成形固体。B的意思是箔式绕组，如果是R则表示为缠绕式绕组，
如果是L则表示为铝绕组，如果是Z则表示为有载调压 （铜不标）。10的意示是设计序号，
Байду номын сангаас下列电力变压器型号代号含义：
D S J L Z SC SG JMB YD BK C） DDG
D-单相S-三相J-油浸自冷L-绕组为铝线Z萌载调压SC-三相环
氧树脂浇注
SG-三相干式自冷川B-局部照明变压器YD-试验用单相变压器BF（C）
寸空制变压器（C为C型铁芯结构）DDG-单相干式低压大电流变压器
9（11）一设计序号500 （ 100 ）一容量
轴承前置字母及后置字母的含义
轴承前置字母及后置字母的含义轴承代号是用字母加数字来表示轴承的结构，尺寸，公差等级和技术性能等特征的产品符号，其用字母（或加数字）表示。
后置代号置于基本代号的后边并与基本代号空半个汉字距（代号中有“－”，“/”者除外）。
当有多组后置代号时，按表Ⅰ所列从左至右的顺序排列，当改变为第4组及其以后各组的内容时，则应在其代号前用“/”与前面的代号隔开。
本标准以国标为准，个别代号以美国轴承制造协会的标准为辅！表Ⅰ前置代号代号含义示例ABFL 方型轴承座AH 拆卸套AHX 退卸套AN 螺母（紧定套，拆卸套及轴用）AXK 滚针系列AXK1528AW 垫圈C 带座轴承两侧为铸造通盖F 1．带外圈凸缘的向心球轴承（限微型轴承）2．带圆形法兰的深沟球轴承F6013FC 铸造凸台圆形座ＦＬ菱形座FL208GE 向心关节轴承GP 可调节的自动油脂润滑器GP－26CGS 推力圆柱滚子轴承座圈H 紧定套HA 紧定套（用于英制轴）HE 紧定套（用于英制轴）HK 冲压外圈滚针轴承HKS 滚针轴承HM 英制单列圆锥滚子轴承LM 英制单列圆锥滚子轴承LR 带可分离内圈或外圈与滚动体组件轴承IR 滚针系列IR10×14×13JLM 单列圆锥滚子轴承（TIMKEN代号）K 滚子和保持架组件KM 带锁定垫圈的锁紧螺母KR 带螺栓轴滚轮滚针轴承L 可分离轴承的可分离内圈或外圈LNU207MB 锁定垫圈MG 叉车轴承MG308FFBN 外圈无档边的圆柱滚子轴承NA 两面带密封圈，外圈双档边的滚轮滚针轴承NB 无档边的圆柱滚子轴承NF 外圈单档边的圆柱滚子轴承NJ 内圈单档边的圆柱滚子轴承NN 双列圆柱滚子轴承NNU 内圈无档边的双列圆柱滚子轴承NU 内圈无档边的圆柱滚子轴承NUP 内圈单档边并带平档圈的圆柱滚子轴承NUTR 平档圈滚轮满装滚子轴承P 铸造立式座RNA 无内圈的滚针轴承KOW 无轴圈推力轴承KIW 无座圈推力轴承QJ 四点接触轴承QJF 双半外圈四点接触球轴承QJT 双半内圈三点接触球轴承QJT 双半外圈三点接触球轴承WS 推力圆柱滚子轴承轴圈PA 圆形立式轴承座PA205R 不带可分离内圈或外圈的轴承RNU207S 不锈钢深沟球系列S6003ＳＡ外螺纹杆端关节轴承SAPP 带立式座轴承SAPP202SB 外球面凸台轴承SB205－16SER 带凸台轴承SER208SBPF 薄园盘座凸台轴承SBPF204SL 滑车轮用SL型圆柱滚子轴承SL04－5072NR（NTN代号）SN5 轻系列轴承座SN516SNK 轴承座箱SSN 轴承箱SSN214T 推力轴承（TIMKEN代号）T130TSNG G型油封UC 带立式座顶丝外球面球轴承UCFUCFLUCHA 带悬吊式座顶丝外球面球轴承UCP 带立式座顶丝外球面球轴承UK 带圆锥孔外球面球轴承UCFB 带悬挂式座顶丝外球面球轴承UCWF 方形轴承座UCWF203UKFC 带凸台圆形座外球面球轴承W 农机轴承W208PP5表Ⅱ后置代号1 2 3 4 5 6 7 8 内部结构密封与防尘及套圈结构保持架及其材料轴承材料公差游隙配置其他其中表Ⅰ中所列1～8项中的代号及含义见表⑴～⑻表⑴内部结构后置代号代号含义示例A 经过改进或改变的内部设计。
2SB798 PDF规格书
2.5
Temperature
When mounted on a ceramic substrate of 16cm2 *0.7mm 2.0
1.5
1.0
0.5
0 0 50
100 150 200 250 ℃
-1000 -500
Collector Current vs. Base to Emitter Voltage
DC Current Gain, hFE
1000 500
200 100
50
20 10
DC Current Gain vs.Collector Current
VCE=1.0V PULSED
℃ ℃℃
℃
Collector Current, IC (A)
Base Saturation Voltage, VBE(sat) (V) Collector Saturation Voltage, VCE(sat) (V)
2SB798 PNP Transistors
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
■ Features
● Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA )
Collector Current, IC (A)
2SB798 PNP Transistors
Gain Bandwidth Product, fT (MHz) Output Capacitance, Cob (pF)
■ Typical Characterisitics
变压器的型号和符号含义
表1：变压器的型号和符号含义型号含义：SCZ(B)9-XXXX/** SC--三相固体成型（环氧浇注）Z--有载调压B--低压箔式线圈9--性能水平代号XXXX--额定容量（kVA）**--额定高压电压（按额定值填入）变压器的型号：变压器绕组数+相数+冷却方式+是否强迫油循环+有载或无载调压+设计序号+“-”+容量+高压侧额定电压组成。
例如4：SFPZ9-120000/110指的是三相（双绕组变压器省略绕组数，如果是三绕则前面还有个S）双绕组强迫油循环风冷有载调压，设计序号为9，容量为120000KVA，高压侧额定电压为110KV的变压器。
例如5：SCB9-2000/10SC----三相固体成型(环氧浇注)B-----低压箔式线圈9-----性能水平代号2000--额定容量10----额定高压电压例如6：SCB9-2000/0.4~0.23 Dyn11此为干式变压器的型号表示S是代表三相；C代表环氧树脂浇注绝缘；B配电变压器；2000是容量KVA ；0.4-0.23KV低压侧额定线电压、额定相电压；Dyn11接线方式表示的是一次侧三相三角形接线，低压侧星形接线，低压侧线电压为11点，即：低压侧线电压超前高压侧线电压30度。
二、关于中频变压器和低频变压器型号说明如下：（1）中频变压器的命名方法晶体管收音机(调幅) 中的中频变压器命名方法由三部分组成:第一部分:主称，用几个字母组合表示名称、特征、用途。
第二部分:外形尺寸，用数字表示。
第三部分:序号，用数字表示。
"1"表示第一中放电用中频变压器,"2"表示第二中放电路用中频变压器;"3"表示和三中放电路用中频变压器,型号中的主称所用字母、外形尺寸所用数字的意义,如表1所示.表1所示中频变压器型号主称用字母与外形尺寸用数字的意义表。
2N60-TN3-T中文资料(Unisonic Technologies)中文数据手册「EasyDatasheet - 矽搜」
VGS
作为D.U.T.
* D.U.T.-测试设备
图 . 1A峰值二极管恢复 dv / dt测试电路
期
P.W.
P. W. D= 期
VGS= 10V
I FM,体二极管正向电流
di/dt IRM
体二极管反向电流
体二极管恢复dv
/dt
VDD
体二极管
正向压降
图 . 1B峰值二极管恢复 dv / dt波形
芯片中文手册,看全文,戳
△BV DSS/ △ TJ
ID = 250 µA
VGS(TH) RDS(ON)
gFS
VDS = VGS, ID = 250µA VGS = 10V, I D =1A VDS = 50V, I D = 1A（注1）
CISS COSS CRSS
VDS =25V, V GS =0V, f =1MHz
功 率 M OSFET
注：1.脉冲测试：脉冲宽度 2.基本上是独立工作温度
功 率 M OSFET
符号
测试条件
MIN TYP MAX 单元
tD (ON) tR
tD(OFF) tF QG
Q GS Q GD
VDD =300V, I D =2.4A, R G=25Ω （注1,2）
V DS=480V, V GS=10V, I D=2.4A （注1,2）
2N60
测试电路和波形（续）
V V R
10V
R V
D.U.T.
图 . 2A开关测试电路
功 率 M OSFET
V
90%
10% V
t t
t t
图 . 2B开关波形
同类型
50kΩ
作为D.U.T.
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UNISONIC TECHNOLOGIES CO., LTD
2SB857
PNP SILICON TRANSISTOR
SILICON PNP TRANSISTOR
DESCRIPTION
Low frequency power amplifier.
*Pb-free plating product number: 2SB857L
ORDERING INFORMATION
Order Number Pin Assignment
Normal
Lead Free Plating Package 1 2 3 Packing
2SB857-x-T6C-K 2SB857L-x-T6C-K TO-126C E C B Bulk 2SB857-x-TN3-R 2SB857L-x-TN3-R TO-252 B C E Tape Reel 2SB857-x-TN3-T 2SB857L-x-TN3-T TO-252 B C E Tube
ABSOLUTE MAXIMUM RATING (Ta=25 )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltages V CBO -130 V Collector-Emitter Voltage V CEO -100 V Emitter-Base Voltage V EBO -5 V Collector Current I C -4 A Collector Current (I C Peak) I C(PEAK) -8 A
TO-126C 1.5 W
Total Power Dissipation TO-252 P D
1.9 W
Junction Temperature T J +150 Storage Temperature T STG -40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 )
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV CBO I C =-10µA, I E =0 -130 V Collector-Emitter Breakdown Voltage BV CEO I C =-50mA, I B =0 -100 V Emitter-Base Breakdown Voltage BV EBO I E =-10µA, I C =0 -5 V Collector-Emitter Saturation Voltage *V CE(SAT)I C =-2A, I B =-0.2A -1 V Base-Emitter Saturation Voltage *V BE(ON)V CE =-4V, I C =-1A -1 V Collector Cut-off Current I CBO V CB =-130V, I C =0 -1 µA
*h FE1 V CE =-4V, I C =-0.1A 35
DC Current Gain
*h FE2 V CE =-4V, I C =-1A
60 320 Transition Frequency f T V CE =-4V, I C =-500mA, f=100MHz 15 MHz Note *Pulse Test: Pulse Width 380 µS, Duty Cycle 2%.
CLASSIFICATION OF h FE2
CLASSIFICATION B
C D
RANGE 60 ~ 120
100 ~ 200 160 ~ 320
TYPICAL CHARACTERISTICS
1
10
100
h FE vs. Collector Current
Collector Current (mA)
h F E
Saturation Voltage v s. Collector Current
Collector Current (mA)
On Voltage vs. Collector Current
Collector Current (mA)
O n V o l t a g e (m V )
Capacitance v s. Reverse-Biased Voltage
Reverse-Biased Voltage (V)
C a p a c i t a
n c e (p F )
Safe Operating Area
Forward Voltage , V CE (V)
C o l l e c t o r C u r r e n t , I C (A )。