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氯化铯离子晶体的嵌套结构和马德隆常数的迭代计算

氯化铯离子晶体的嵌套结构和马德隆常数的迭代计算

氯化铯离子晶体的嵌套结构和马德隆常数的迭代计算
马德隆常数( Madelung constant )是一种测量离子晶体立方排布的模式的系数。

它描述了
一种离子晶体里相邻离子之间的势垒,因此也被称作势垒系数或势垒常数。

马德隆常数可
以运用于离子化合物中具有立方对称性和非常定离子处理的多种物质,如金刚石晶体和卤
素晶体,如氯化铯晶体。

马德隆常数是一个有深度的计算式,它的计算方法包括使用离子晶体的嵌套结构和迭代计算法。

嵌套结构( nested structure )描述了晶体中离子的立方排列模式,它有多种类型,变化的范围也极其恢宏。

比如氯化铯晶体是个典型的嵌套结构,一开始只有离子核,沿着每个价态在晶体中交替排列着,就像一堆彼此挤压着却不会消失的中国结一样,每一种价态都有一
定的可持续排布模式,这就是嵌套结构。

第二步就是迭代计算法,它是一个不断重复计算相互作用势垒的过程。

首先,重复使用某
种数值解法,如梯度消去法( GR )结合嵌套结构模型,计算嵌套的每一部分的势垒的大小。

然后用马德隆定律将这些势垒大小累乘结果,得到Madelung常数。

最后,这一迭代计算又要重复进行,重新计算新的嵌套结构的大小,以及势垒的强度。


般而言,只有当势垒的强度变化得非常小时,整个迭代计算才会停止,以确保该离子晶体
中每个价态离子核处于能量最低状态。

以上就是使用离子晶体的嵌套结构和马德隆常数的迭代计算法计算Madelung常数的详细
过程。

它是一种复杂的计算方法,是对物质的一个很好的物理分析,其成果可以在实验研究中得到验证和利用。

嵌入式快速3D界面框架的设计与实现

嵌入式快速3D界面框架的设计与实现

嵌入式快速3D界面框架的设计与实现林梅燕;杨盛国;彭井花【摘要】目前随着嵌入式设备的功能越来越强大,人们对嵌入式的界面和游戏性能的要求也越来越高。

但3D界面开发周期长,针对以上问题提出了一个基于嵌入式3D界面的快速开发框架,该嵌入式界面框架已应用在Android Launcher程序实践中,呈现出流畅、实用的3D界面效果,为Android设备的界面差异化、定制化提供了一种途径。

%As embedded devices become more powerful,people are more dependent on the performance of the embedded interface and game.Since the 3D interface takes a long development cycle,this paper proposes a rapid development framework based on embedded 3D interface.The embedded interface framework has been used in the program practice of Android Launcher,showing a smooth,practical 3D interface effects.It also provides a way for the Android device interface being differential.【期刊名称】《福建师大福清分校学报》【年(卷),期】2012(000)005【总页数】6页(P23-28)【关键词】界面框架;3D;嵌入式;OpenGL;ES;动画框架【作者】林梅燕;杨盛国;彭井花【作者单位】福州大学阳光学院电子信息工程系,福建福州350005;福州大学阳光学院电子信息工程系,福建福州350005;福州大学阳光学院电子信息工程系,福建福州350005【正文语种】中文【中图分类】TP3910 引言目前,嵌入式技术的应用越来越广泛,已经渗透到我们生活的各个领域,因此开发一个优秀的图像界面是非常有必要的,但设计一个良好的界面首要条件是使人机交互更加方便快捷、画面更加形象逼真。

嵌入式图片滑动的3D桌面设计

嵌入式图片滑动的3D桌面设计

Pcu e lwAnmao itr F o i tr和 Pcu e lwS f rRe d r r构 i rF o o t e n 个 Sie f 例 对 应 着 一 张 图 如 l I o实 d n 片 , 含 了 图 片 的 偏 转 角 度 和 坐 标 等 信 息 ; i ue lw 包 Pc rFo — t Sae 录 了所 有 图 片 的 信 息 ; i ue l nmao 包 含 tt 记 Pc rFo t wA i tr
2 2 渲 染 算 法 .
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图 片 的 移 动 功 能 实 现 ; itrFlwS fwae n e e 现 P cu e o ot rRe d rr实 了对 图 片 的 渲 染 。P cu e lwP iae类 含 有 4个 指 针 , it rFo r t v 分 别 指 向 了 上 述 3个 功 能 类 和 1个 定 时 器 ; Pcu e 而 i r— t
点 的 不 同 , 应 事 件分 为 3种 , 击 页 面正 中间 区 域 即触 发 响 点
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IEC61400-1-2005风电机组设计要求标准英汉对照

IEC61400-1-2005风电机组设计要求标准英汉对照
Consolidated editions The IEC is now publishing consolidated versions of its publications. For example, edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication,the base publication incorporating amendment 1 and the base publication incorporating amendments 1and 2.
需要什么文档直接在我的文档里搜索比直接在网站大海捞针要容易的多也准确省时的多
INTERNATIONAL STANrbines – Part 1:
Design requirements
Publication numbering As from 1 January 1997 all IEC publications are issued with a designation in the 60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.
Further information on IEC publications The technical content of IEC publications is kept under constant review by the IEC, thus ensuring that the content reflects current technology. Information relating to this publication, including its validity, is available in the IEC Catalogue of publications (see below) in addition to new editions, amendments and corrigenda. Information on the subjects under consideration and work in progress undertaken by the technical committee which has prepared this publication, as well as the list of publications issued,is also available from the following: IEC Web Site (www.iec.ch) Catalogue of IEC publications The on-line catalogue on the IEC web site (www.iec.ch/searchpub) enables you to search by a variety of criteria including text searches,technical committees and date of publication. Online information is also available on recently issued publications, withdrawn and replaced publications, as well as corrigenda. IEC Just Published This summary of recently issued publications (www.iec.ch/online_news/justpub) is also available by email. Please contact the Customer Service Centre (see below) for further information. Customer Service Centre If you have any questions regarding this publication or need further assistance, please contact the Customer Service Centre: Email: custserv@iec.ch Tel: +41 22 919 02 11 Fax: +41 22 919 03 00 .

使用Android SwipeRefreshLayout了解Android的嵌套滑动机制

使用Android SwipeRefreshLayout了解Android的嵌套滑动机制

使用Android SwipeRefreshLayout 了解Android的嵌套滑动机制SwipeRefreshLayout 是在Android Support Library, revision 19.1.0添加到support v4库中的一个下拉刷新控件,关于android的下拉刷新框架现在有好多,曾经用过XListView,现在工作中基本上无需用到下拉刷新的功能。

废话不多说了,这里来记录一下android自带的刷新控件SwipeRefreshLayout的使用,借此顺便来熟悉一下android在Lollipop版本推出的嵌套滑动机制(NestedScrolling)。

首先来看SwipeRefreshLayout的使用,使用很简单,看一下布局文件[html]view plain copy1.<?xml version="1.0"encoding="utf-8"?>2.<android.support.v4.widget.SwipeRefreshLayout xmlns:android="http://schemas./apk/res/android"3.xmlns:tools="/tools"4.android:id="@+id/swiperefresh"5.android:layout_width="match_parent"6.android:layout_height="match_parent"7.tools:context=".recyclerviewdemo.RecyclerViewActivity">8.9.<android.support.v7.widget.RecyclerView10.android:id="@+id/my_recycler_view"11.android:layout_width="match_parent"12.android:layout_height="wrap_content"/>13.</android.support.v4.widget.SwipeRefreshLayout>注意SwipeRefreshLayout只能有一个直接的子View。

智能融合2和冰雪2嵌入式非易失性存储(eNVM)模拟说明书

智能融合2和冰雪2嵌入式非易失性存储(eNVM)模拟说明书

SmartFusion2 and IGLOO2 Embedded Nonvolatile Memory (eNVM) SimulationSmartFusion2 and IGLOO2 Embedded Nonvolatile Memory (eNVM) Simulation Table of ContentsIntroduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31NVM Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42eNVM Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 eNVM Internal Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 eNVM Access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63eNVM Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Writing to the eNVM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Reading from the eNVM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Erasing the eNVM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94Product Support. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Customer Service . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Customer Technical Support Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Technical Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Website . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contacting the Customer Technical Support Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 ITAR Technical Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12IntroductionThe SmartFusion2 MSS has an on-chip embedded non-volatile memory (eNVM). You can access theeNVM using the eNVM controller. This controller is a slave of the MSS AHB Switch Matrix and canreceive commands from a master located either inside the MSS (i.e., Cortex M3) or a master located inthe fabric via the Fabric Interface Controllers (FIC_0 or FIC_1).This document describes the steps required to simulate eNVM operation.1 – NVM ConfigurationYou can configure the eNVM using the MSS eNVM configurator. Using the eNVM configurator, you can:•Add Serialization and Data Storage clients•Supply data files that will be used to initialize the eNVM block when you program your device For details, and to learn about the eNVM configurator options, refer to the SmartFusion2 MSS eNVMConfiguration Guide.2 – eNVM OrganizationThis chapter describes the internal organization of the eNVM, and how it is accessed by Masters in the MSS and the FPGA fabric.The eNVM is a nonvolatile (flash) memory that is divided into pages. Each page of the eNVM contains 128 bytes (accessible as 32 words).The total capacity of the eNVM varies with the SmartFusion2 or IGLOO2 device you are using. Table 2-1 provides a list of devices and eNVM capacities.Note:On the larger (M2S/M2GL090/150) devices, the eNVM is composed of two blocks (eNVM_0 andeNVM_1), which are accessed separatelyeNVM Internal OrganizationEach eNVM is divided into pages. One page is a 128-byte section of the eNVM. The eNVM is word-addressable. Table 2-2 and Table 2-3 list the ranges of the eNVM pages for different devices.Table 2-1 • eNVM Capacity by Device DeviceeNVM capacity (bytes)SmartFusion2M2S0051 x 128KB M2S010, M2S025, M2S050, M2S0601 x 256KB M2S090, M2S1502 x 256KB IGLOO2M2GL0051 x 128KB M2GL010, M2GL025, M2GL050, M2GL0601 x 256KB M2GL090, M2GL1502 x 256KBTable 2-2 • SmartFusion2 eNVM Page RangesDevice Capacity Total Pages (User + Reserved)Total Reserved Pages User Page Range (Available to User) Reserved Page Range(Unavailable to User)M2S005128KB1024160-10071008-1023M2S010, M2S025, M2S050256KB2048160-20312032-2047M2S050T_ES256KB2048330-20142015-2047Note:For IGLOO2, Reserved Pages are used by the HPMS to store Certificate/Digest and Peripheralconfiguration data for SERDES, FDDR and MDDR. For SmartFusion2, Reserved Pages are used by the MSS to store Certificate/Digest only. Reserved pages are for internal use only and not available to the user.eNVM AccessThe SmartFusion2 eNVM is part of the MSS. It is accessed via the eNVM Controller, which is a slave of the MSS AHB Switch Matrix (Figure 2-1). Masters of the AHB Switch Matrix (MSS Cortex-M3), a Fabric Master (via the FIC32_0/1 interfaces) can read from and write to the eNVM.•All eNVM accesses are performed using AHB read and write transactions•Irrespective of the master initiating the access, the procedure to read and write the eNVM remains the sameM2S060256KB 2048640-19831984-2047M2S090, M2S150512KB4096640-40314032-4095Table 2-2 • SmartFusion2 eNVM Page Ranges (continued)Device Capacity Total Pages (User + Reserved)Total Reserved Pages User Page Range (Available to User) Reserved Page Range(Unavailable to User)Table 2-3 • IGLOO2 eNVM Page RangesDevice Capacity Total Pages (User+Reserved)Total Reserved Pages User Page Range (Available to User) Reserved PageRange(Unavailable to User)M2GL005128KB 1024480-975976-1023M2GL010,M2GL025, M2GL050256KB 2048480-19992000-2047M2GL060256KB 2048960-19511952-2047M2GL090, M2GL150512KB4096960-39994000-4095Figure 2-1 • eNVM Access3 – eNVM SimulationThe eNVM simulation model fully models the commands and bus transactions required to access theeNVM on silicon.To access the eNVM, you must initiate AMBA transactions using either the Cortex-M3 Master or a FabricMaster (Using the FIC Slave Interface).Before accessing the eNVM, Microsemi recommends that you poll bit #0 of the eNVM status register(address: 0x60080120). If this bit is 0, the eNVM is busy. Wait until this bit becomes 1 to access theeNVM.Writing to the eNVMYou can simulate writing to eNVM from the following bus masters:•Cortex-M3 (SmartFusion2 only)•Fabric AHB Master (via FIC_0 or FIC_1)•Fabric APB Master (via FIC_0 or FIC_1)Writes to the eNVM are buffered. You must first write your data into the write data buffer (WDB) and thenuse a single command to commit (program) your data into one page of the eNVM.The sequence of transactions required to program the eNVM is:1.Request exclusive access to the eNVM control register set. This is necessary to ensure that noother Master can write to the eNVM at the same time, and is done by writing 0x1 to theREQACCESS register (address: 0x600801FC)The Master that is requesting exclusive access must then check that the request has beengranted by reading back from the REQACCESS register.–On read back, check bit #2 (counting up from 0). If it is 1, the request was successful.–If bit #2 is 0, the request for exclusive access was denied, and the eNVM cannot be written at this time.2.Write your data into the WDB; the WDB is a byte-addressable 1024-bit buffer. Its base address is:0x60080080 for eNVM_0 and at 0x600C0080 for eNVM_1.pute values of bits that will be written into the eNVM Command Register:–Bits 31-24 should be 0x80 (Hex) to specify the ProgramADS command code.–Bits [17:7] corresponds to the eNVM page address to be written–Bits [23:18] and [6:0] are not relevant for the ProgramADS command and can be written 0x0 (Hex)For details about what values to use, refer to Table 4-7 in the SmartFusion2 Microcontroller SubsystemUser's Guide.4.Write eNVM Command Register (address: 0x60080148) with the data computed in Step 3 aboveNote that the eNVM will not respond to further commands until the write is completeNote that on silicon, writing a page of the eNVM may take up to 8ms, but in simulation, this stepcompletes in a few clock cycles5.Release exclusive access to the eNVM control register set by writing 0x0 to the REQACCESSregister.The following is an example of a Cortex-M3 BFM script configured to write a block of data to eNVM0.Assume that you want to write two 32-bit words 0xaaaaaaaa and 0xbbbbbbbb into page 25 of the eNVM.#1. Wait for bit 0 of status register to become 1pollbit w 0x60080120 0x0 0 1#2. Request exclusive access to the eNVM control register setwrite w 0x600801fc 0x0 0x1#2b. Readcheck to see if access has been grantedreadcheck w 0x600801fc 0x0 0x5 (for MSS master)#The simulation will fail if access has not been granted#3. Write data to the WDBwrite w 0x60080080 0x0 0xaaaaaaaawrite w 0x60080080 0x4 0xbbbbbbbb#4. Compute the value of the command register: Bits[31-19]: '0000 1000 0000 0'#Bits[18-7]: '000 0000 1100 1' (25 in decimal)#Bits[6-0]: '000 0000'#Complete string: 0x08000c80#5. Write the command registerwrite w 0x60080148 0x0 0x08000c80#6. Release exclusive access to the eNVMwrite w 0x600801fc 0x0 0x0Refer to the SmartFusion2 FPGA Microcontroller Subsystem BFM Simulation Guide for generalguidelines on BFM simulations for SmartFusion2 designs.Reading from the eNVMThe eNVM can be read as a byte-addressable random access memory. The address range for reads isgiven in Table3-1.Table3-1 • eNVM Read Address RangesENVM0ENVM1Base Address0x600000000x60040000Max read address (005)0x6002FFFF N/AMax read address (010,025,050, 060)0x6003FFFF N/AMax read address (090,150)0x6003FFFF 0x6007FFFF The eNVM is accessible directly, similar to a random access memory. The address ranges of the eNVMsare given in Table3-1. To read any location in the eNVM, first compute the offset address as follows:Offset Address = (Page #) * 0x80 + (Address of Word in Page)The Base Address will be either 0x60000000 or 0x60040000, depending on whether you are accessingeNVM_0 or eNVM_1.The following is an example that demonstrates how to read data from eNVM_0. In the example above,two 32-bit words "0xaaaaaaaa" and "0xbbbbbbbb" were written into addresses 0x0 and 0x4 of Page# 25of eNVM_0. The example below shows an attempt to read the same two words back.#1. Wait for bit 0 of status register to become 1pollbit w 0x60080120 0x0 0 1#2 Read first word#2a Base Address = 0x60000000#2b Word in Page = 0x0 (first word). Page Number = 25.# Offset Address = 0x80 * 25 + 0x0 = 0xc80#2c Read and compare word to what was written in Fig. 2readcheck w 0x60000000 0xc80 0xaaaaaaaa#3 Read second word#3a Base Address = 0x60000000#3b Word in Page = 0x4 (second word). Page Number = 25.# Offset Address = 0x80 * 25 + 0x4 = 0xc84#3c Read and compare word to what was written in Fig. 2readcheck w 0x60000000 0xc84 0xbbbbbbbbErasing the eNVMYou can also erase the contents of the eNVM, one page at a time using the following steps:1.Request exclusive access to the eNVM control register set. This is necessary to ensure that noother Master can write to the eNVM at the same time. This is done by writing 0x1 to theREQACCESS register (address: 0x600801FC). The Master that is requesting exclusive accessmust then check that the request has been granted by reading back from the REQACCESSregister.–On read back, check bit #2 (counting up from 0). If it is 1, the request was successful.–If bit #2 is 0, the request for exclusive access was denied, and the eNVM cannot be written at this time.pute values of bits that will be written into the eNVM Command Register:–Bits 31-20: "0x020"–Bit19:0–Bits 18-7 corresponds to the number of the page to be written–Bits 6-0: “0x0"3.Write eNVM Command Register (address: 0x60080148) with the data computed in the previousstep.The eNVM will not respond to further commands until the erase is complete.Note that on silicon, erasing a page of the eNVM may take up to 8ms, but in simulation, this stepcompletes in a few clock cycles.4.Release exclusive access to the eNVM control register set by writing 0x0 to the REQACCESSregister.The example below shows a sequence of instructions to erase page #25 of eNVM_0.#1. Wait for bit 0 of status register to become '1'pollbit w 0x60080120 0x0 0 1#2. Request exclusive access to the eNVM control register setwrite w 0x600801fc 0x0 0x1#2c. Readcheck to see if access has been grantedreadcheck w 0x600801fc 0x0 0x5 (for MSS master)#The simulation will fail if access has not been granted#3. Compute the value of the command register: Bits[31-19]: '0000 0010 0000 0'#Bits[18-7]: '000 0000 1100 1' (25 in decimal)#Bits[6-0]: '000 0000'#Complete string: 0x02000c80#4. Write the command registerwrite w 0x60080148 0x0 0x02000c80#5. Release exclusive access to the eNVMwrite w 0x600801fc 0x0 0x04 – Product SupportMicrosemi SoC Products Group backs its products with various support services, including CustomerService, Customer Technical Support Center, a website, electronic mail, and worldwide sales offices.This appendix contains information about contacting Microsemi SoC Products Group and using thesesupport services.Customer ServiceContact Customer Service for non-technical product support, such as product pricing, product upgrades,update information, order status, and authorization.From North America, call 800.262.1060From the rest of the world, call 650.318.4460Fax, from anywhere in the world, 408.643.6913Customer Technical Support CenterMicrosemi SoC Products Group staffs its Customer Technical Support Center with highly skilledengineers who can help answer your hardware, software, and design questions about Microsemi SoCProducts. The Customer Technical Support Center spends a great deal of time creating applicationnotes, answers to common design cycle questions, documentation of known issues, and various FAQs.So, before you contact us, please visit our online resources. It is very likely we have already answeredyour questions.Technical SupportVisit the Customer Support website (/soc/support/search/default.aspx) for moreinformation and support. Many answers available on the searchable web resource include diagrams,illustrations, and links to other resources on the website.WebsiteYou can browse a variety of technical and non-technical information on the SoC home page, at/soc.Contacting the Customer Technical Support CenterHighly skilled engineers staff the Technical Support Center. The Technical Support Center can becontacted by email or through the Microsemi SoC Products Group website.EmailYou can communicate your technical questions to our email address and receive answers back by email,fax, or phone. Also, if you have design problems, you can email your design files to receive assistance.We constantly monitor the email account throughout the day. When sending your request to us, pleasebe sure to include your full name, company name, and your contact information for efficient processing ofyour request.The technical support email address is **********************.5-02-00498-2/07.15Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.Microsemi Corporation (MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace, and industrial markets.Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,600 employees globally. Learn more at .Microsemi Corporate HeadquartersOne Enterprise, Aliso Viejo,CA 92656 USAWithin the USA: +1 (800) 713-4113Outside the USA: +1 (949) 380-6100Sales: +1 (949) 380-6136Fax: +1 (949) 215-4996E-mail:***************************©2015 Microsemi Corporation. All rightsreserved. Microsemi and the Microsemilogo are trademarks of MicrosemiCorporation. All other trademarks andservice marks are the property of theirrespective owners.My CasesMicrosemi SoC Products Group customers may submit and track technical cases online by going to My Cases .Outside the U.S.Customers needing assistance outside the US time zones can either contact technical support via email (**********************) or contact a local sales office. Sales office listings can be found at /soc/company/contact/default.aspx.ITAR Technical SupportFor technical support on RH and RT FPGAs that are regulated by International Traffic in Arms Regulations (ITAR), contact us via ***************************. 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堆叠设计 过程

堆叠设计 过程

堆叠设计过程在当今的设计领域中,堆叠设计是一种常用的设计技术,它通过将不同的层次和元素组合在一起,创造出丰富多样的视觉效果和用户体验。

本文将详细介绍堆叠设计的过程,旨在帮助设计师们更好地理解和应用这种设计方法。

第一步:明确设计目标在进行堆叠设计之前,我们首先要明确自己的设计目标。

这包括确定设计的用途、目标受众以及传达的信息。

只有明确了设计目标,我们才能有针对性地选择合适的层次和元素进行堆叠。

第二步:收集素材和准备资源在开始设计之前,我们需要收集和准备好所需的素材和资源。

这包括文字、图片、图标、背景等。

素材的选择要与设计目标相契合,并且要注意版权和可用性的问题。

准备充足的资源可以为后续的设计工作提供便利。

第三步:构建基本结构在进行堆叠设计时,我们首先需要构建一个稳定的基本结构。

这个基本结构可以是一个网格系统、一个页面框架或者一个界面布局。

通过建立基本结构,我们可以更好地控制元素的位置和排列,使设计更加有层次感和结构性。

第四步:选择合适的层次和元素在基本结构建立之后,我们需要选择合适的层次和元素进行堆叠。

这包括文字、图片、图标、按钮等。

在选择时,我们要考虑元素之间的关系和视觉效果,使它们能够相互补充和协调,形成一个整体。

第五步:调整样式和效果选择了合适的层次和元素之后,我们需要对它们进行样式和效果的调整。

这包括颜色、字体、大小、动画等。

样式和效果的选择要与设计目标相一致,突出重点,增加表现力和吸引力。

第六步:优化与调试在完成初步设计之后,我们需要对设计进行优化和调试。

这包括对页面加载速度、响应式设计以及用户体验等方面进行测试和改进。

只有经过不断优化和调试,我们的设计才能更加完善和出色。

第七步:评估和反馈最后一步是对设计进行评估和反馈。

我们可以邀请用户或同行进行评估,收集他们的意见和建议。

通过评估和反馈,我们可以了解设计的优点和不足之处,进一步改进和完善设计。

堆叠设计是一种重要的设计方法,它可以为我们创造出丰富多样的视觉效果和用户体验。

堆栈的总结

堆栈的总结

堆栈的总结什么是堆栈?在计算机科学中,堆栈(Stack)是一种线性数据结构,符合LIFO(Last In First Out)的原则。

LIFO意味着最后入栈的元素首先被弹出。

堆栈的操作包括压入(push)和弹出(pop),以及查看堆栈顶部元素(top)的值。

堆栈的特性堆栈具有以下特性:1.LIFO原则:最后入栈的元素首先被弹出。

2.仅访问顶部元素:堆栈只允许访问顶部元素,其他元素只有通过弹出操作才能访问。

3.有限容量:堆栈的大小有限,当容量达到上限时,再进行压栈操作会导致堆栈溢出。

4.轻量级:由于堆栈只需维护栈顶指针和元素数据,并不需要为每个元素分配内存空间,因此堆栈是一种轻量级的数据结构。

堆栈的应用堆栈在计算机科学中有广泛的应用,以下是一些常见的应用场景:函数调用在编程语言中,堆栈被用于保存函数调用的上下文信息。

每当一个函数调用另一个函数时,当前函数的状态(包括局部变量、函数参数和返回地址)都被压入堆栈。

当被调用函数执行完毕后,堆栈顶部的帧被弹出,程序流程回到调用函数的位置。

表达式求值在编程语言中,堆栈被用于解析和计算表达式。

具体地,中缀表达式通常被转换为后缀表达式后,通过堆栈来进行求值。

算法依次扫描表达式,遇到操作数时将其压入堆栈,遇到操作符时弹出必要数量的操作数进行计算,并将计算结果压入堆栈,直到整个表达式求值完成。

括号匹配堆栈常被用于检查表达式中的括号匹配情况。

算法通过扫描表达式,遇到左括号时将其压入堆栈,遇到右括号时弹出一个左括号进行匹配,如果堆栈为空或弹出的括号与当前右括号不匹配,则表示括号不匹配。

撤销操作在许多应用程序中,我们经常需要实现撤销操作。

对于这种情况,堆栈被用于保存操作的历史记录。

每当执行一个操作时,操作的结果被压入堆栈,当需要撤销操作时,只需弹出堆栈顶部的操作结果。

堆栈的实现堆栈可以通过数组或链表来实现。

以下是两种常见的实现方式:数组实现在数组实现中,可以使用固定大小的数组来表示堆栈。

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深圳大学实验报告课程名称:数字系统现场集成技术实验项目名称:内嵌BRAM设计LIFO堆栈学院:信息工程学院专业:集成电路设计与集成系统指导教师:报告人:学号:班级:报告人:学号:班级:实验时间:实验报告提交时间:教务部制图1 VGA接口信号基本时序图图3 VGA(640*480@60Hz)时序图VGA显示的设计模块为:VGA显示模块clkrst_n vs hs r g b说明:设计中FPGA板的VGA接口将R,G,B分别设为定义为2位,3位,3位,例如显示红色RGB可以输出为11000000,绿色输出为00111000,蓝色输出为00000111.表1 25MHz 640*480@60Hz模式下VGA的时序五、ASM图lifo的控制状态图为:图5.1 lifo控制状态图图中的cnt为写进BRAM中的个数,所以减去1就是BRAM中的地址,write 和read的信号是按键的经处理后的脉冲。

RTL图:图5.1.1 顶层模块RTL图1 图5.1.2 顶层模块RTL图2-----------------------------------------------------------------------------2、div_clk模块代码library IEEE;use IEEE.STD_LOGIC_1164.ALL;use ieee.std_logic_arith.all;USE ieee.std_logic_unsigned.all;-- Uncomment the following library declaration if using-- arithmetic functions with Signed or Unsigned values--use IEEE.NUMERIC_STD.ALL;-- Uncomment the following library declaration if instantiating-- any Xilinx primitives in this code.--library UNISIM;--use UNISIM.VComponents.all;entity div_clk isgeneric (cnt : integer range 1 to 2**30 := 2**30); --分频系数port(clk : in std_logic;.CLK2X180(),.CLK90(),.CLK180(),.CLK270(),.LOCKED(),.PSDONE(),.STATUS()); endmoduleRTL图为图5.3.1 clkf倍频模块RTL图仿真代码为:module clk300m_tb;// Inputsreg clk;reg rst_p;// Outputswire clk_out;// Instantiate the Unit Under Test (UUT)clkf uut (.clk(clk),.rst_p(rst_p),.clk_out(clk_out));initial begin// Initialize Inputsclk = 0;rst_p = 0;// Wait 100 ns for global reset to finish#100;// Add stimulus hereendalways #10 clk = ~clk;endmodule结果为:、图5.3.1 clkf倍频模块仿真因为clkfx_divide为1,clkfx_multiply为5,所以是倍频5倍,由图可看出刚好5倍,所以结果是对的。

-----------------------------------------------------------------------------4、sf采样模块此模块是采样滤波,只要是为了消抖。

//singal filtermodule sf #(parameter times = 20'b1111_0100_0010_0100_0000, //1000000width = 20)(clk,rst_n,in,out);input clk;input rst_n;图5.4.1 RTL图仿真代码为:`timescale 1ns / 1ps////////////////////////////////////////////////////////////////////////////////// Company:// Engineer://// Create Date: 17:00:39 04/25/2016// Design Name: sf// Module Name: D:/my class/Digital system integration technology/lab3_lifo/lifo3/sf_tb.v // Project Name: lifo// Target Device:// Tool versions:// Description://// Verilog Test Fixture created by ISE for module: sf//// Dependencies://// Revision:// Revision 0.01 - File Created// Additional Comments://////////////////////////////////////////////////////////////////////////////////module sf_tb;// Inputsbegin#10 in = 1;#10 in = 0;end// Wait 100 ns for global reset to finish#100;// Add stimulus hereendalways #5 clk = ~clk;endmodule结果为图5.4.2 仿真代码结果前面几段故意仿真不小心抖动一下按键,结果并不会产生信号,长按按键才会出现高电平。

-----------------------------------------------------------------------------5、psp电平转脉冲模块module psp #(parameter width = 2)(clk,rst_n,in,pulse);input clk;input rst_n;input [width-1:0] in;output [width-1:0] pulse;reg [width-1:0] in_r1 = {width{1'b0}};reg [width-1:0] in_r2 = {width{1'b0}};always@(posedge clk or negedge rst_n)if(!rst_n)beginin_r1 <= {width{1'b0}};in_r2 <= {width{1'b0}};endelsebeginin_r1 <= in;in_r2 <= in_r1;endassign pulse = ~in_r2 & in_r1;endmoduleRTL图:图5.6.1 RTL图图5.6.2 RTL展开图仿真代码:module psp_tb;parameter width = 3;// Inputsreg clk;reg rst_n;reg [width-1:0] in;// Outputswire [width-1:0] pulse;// Instantiate the Unit Under Test (UUT)psp #(width)uut (.clk(clk),.rst_n(rst_n),.in(in),.pulse(pulse));initial begin// Initialize Inputsclk = 0;rst_n = 1;in = 0;#1 rst_n = 0;#1 rst_n = 1;repeat(4)begin#40 in = 3'h1;#100 in = 3'h0;#40 in = 3'h2;#100 in = 3'h0;#40 in = 3'h4;#100 in = 3'h0;#40 in = 3'h7;#100 in = 3'h0;end// Wait 100 ns for global reset to finish#100;// Add stimulus hereendalways #10 clk = ~clk;endmodule结果为:这是两个电平信号转换成相对应的脉冲信号,如结果所示,正确无误。

-----------------------------------------------------------------------------6、spf脉冲时间拉长模块always@(posedge clk or negedge rst_n)if(!rst_n)filter <= {width{1'b0}};elsefilter <= filter_pre;assign filter_pre = in_r3 ? {width{1'b0}} :(filter == times) ? filter :filter + 1'b1;always@(posedge clk or negedge rst_n)if(!rst_n)beginout_r <= 1'b0;endelsebeginout_r <= out_pre;endassign out_pre = (filter == times) ? in_r3 : (out_r | in_r3);assign out = out_r;endmoduleRTL图为:图5.6.1 RTL图仿真代码为:module spf_tb;由图看可达到想要的结果。

-----------------------------------------------------------------------------7、lifo模块此模块是控制RAM的读和写来实现lifo功能的。

module lifo(clk,rst_n,wr,rd,din,full,empty,num,//addr,wrdout, //writing datarddout //read data);input clk;input rst_n;input wr;input rd;input [3:0] din;output [3:0] num;output [3:0] wrdout;output [3:0] rddout;output full;output empty;//output [3:0] addr;wire [3:0] addr;reg [4:0] cnt = 5'h00;wire [4:0] cnt_pre;wire [3:0] ramdout;reg [3:0] rddout_r = 4'h0;wire [3:0] rddout_pre;reg [3:0] wrdout_r = 4'h0;wire [3:0] wrdout_pre;wire we;assign video_de = hs_de & vs_de;//generate point coordinate (x,y)assign video_x = hs_de ? (x_cnt - HSTPW - HSTBP + 1'b1) : {width_x{1'b0}};assign video_y = vs_de ? (y_cnt - VSTPW - VSTBP) : {width_y{1'b0}};//r,g,b控制液晶屏颜色显示assign video_r = video_de ? video_rgb[7:5] : 3'b000;assign video_g = video_de ? video_rgb[4:2] : 3'b000;assign video_b = video_de ? video_rgb[1:0] : 2'b00;endmoduleRTL图:图5.4.1 video_signal_gen 展开图测试代码为module vga256_tb;// Inputsreg clock;reg rst_p;// Outputswire vsync;wire hsync;wire vga_de;wire [1:0] vga_b;wire [2:0] vga_g;wire [2:0] vga_r;// Instantiate the Unit Under Test (UUT)vga256 uut (.clock(clock),.rst_p(rst_p),.vsync(vsync),.hsync(hsync),.vga_de(vga_de),.vga_b(vga_b),.vga_g(vga_g),.vga_r(vga_r));initial begin// Initialize Inputsclock = 0;rst_p = 0;//rst_n = 1;#1 rst_p = 1;#1 rst_p = 0;// Wait 100 ns for global reset to finish#100;// Add stimulus hereendalways #5 clock = ~ clock;endmodule测试结果:图5.4.2 测试结果1图5.4.3 测试结果2之前本人有根据上面的时间计算过,确实是一个hs周期里有800个时钟,一个vs周期里有525个时钟,所以大胆猜测是对的,烧到板子上果然是对的。

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