MC74VHC1GU04DFT2中文资料

13245SOT–23/TSOP–5/SC–59DT SUFFIX CASE 483• High Speed: t PD = 2.5 ns (Typ) at V CC = 5 V• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays• Chip Complexity: FETs = 105; Equivalent Gates = 26SC–70/SC–88A/SOT–353DF SUFFIX CASE 419A13245Pin 1d = Date CodePin 1d = Date CodeFigure 1. Pinout (Top View)Figure 2. Logic SymbolPIN ASSIGNMENT 1NC 2IN A 3GND 4OUT Y 5V CCFUNCTION TABLEInputs Output A Y L H HLORDERING INFORMATIONSee detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.Unbuffered InverterMC74VHC1GU04RECOMMENDED OPERATING CONDITIONSSymbol Parameter Min Max Unit V CC DC Supply Voltage 2.0 5.5V V IN DC Input Voltage 0.0 5.5V V OUT DC Output Voltage 0.0V CC V T A Operating Temperature Range – 55+ 125°C tr ,t f Input Rise and Fall TimeV CC = 3.3 ± 0.3 V 0No Limit ns/VV CC = 5.0 ± 0.5 V0No LimitDEVICE JUNCTION TEMPERATURE VERSUSTIME TO 0.1% BOND FAILURESJunction Time,Time,Temperature °CHours Years 801,032,200117.890419,30047.9100178,70020.411079,6009.412037,000 4.213017,800 2.01408,900 1.0N O R M A L I Z E D F A I L U R E R A T EFigure 3. Failure Rate vs. Time Junction Temperature11101001000MAXIMUM RATINGSSymbol Parameter Value Unit V CC DC Supply Voltage – 0.5 to + 7.0V V IN DC Input Voltage – 0.5 to +7.0VV OUTDC Output VoltageV CC =0– 0.5 to +7.0VHigh or Low State –0.5 to V cc + 0.5I IK Input Diode Current –20mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20mA I OUT DC Output Current, per Pin + 25mA I CC DC Supply Current, V CC and GND +50mA P D Power dissipation in still air SC–88A, TSOP–5200mW θ JA Thermal resistance SC–88A, TSOP–5333°C/W T L Lead Temperature, 1 mm from Case for 10 s 260°C T J Junction Temperature Under Bias + 150°C T stg Storage temperature –65 to +150°C V ESD ESD Withstand Voltage Human Body Model (Note 2)>2000VMachine Model (Note 3)> 200Charged Device Model (Note 4)N/AI LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)± 500mA1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.2. Tested to EIA/JESD22–A114–A3. Tested to EIA/JESD22–A115–A4. Tested to JESD22–C101–A5. Tested to EIA/JESD78TIME, YEARSMC74VHC1GU04DC ELECTRICAL CHARACTERISTICSV CC T A = 25°C T A < 85°C–55°C<T A<125°CSymbol Parameter Test Conditions(V)Min Typ Max Min Max Min Max Unit V IH Minimum High–Level 2.0 1.7 1.7 1.7V Input Voltage 3.0 2.4 2.4 2.44.5 3.6 3.6 3.65.5 4.4 4.4 4.4V IL Maximum Low–Level 2.00.30.30.3V Input Voltage 3.00.60.60.64.50.90.90.95.5 1.1 1.1 1.1V OH Minimum High–Level V IN = V IH or V IL 2.0 1.9 2.0 1.9 1.9V Output Voltage I OH = – 50 µA 3.0 2.9 3.0 2.9 2.9V IN = V IH or V IL 4.5 4.4 4.5 4.4 4.4V IN = V IH or V ILI OH = –4 mA 3.0 2.58 2.48 2.34I OH = –8 mA 4.5 3.94 3.80 3.66V OL Maximum Low–Level V IN = V IH or V IL 2.00.00.10.10.1V Output Voltage I OL = 50 µA 3.00.00.10.10.1V IN = V IH or V IL 4.50.00.10.10.1V IN = V IH or V ILI OL = 4 mA 3.00.360.440.52I OL = 8 mA 4.50.360.440.52I IN Maximum Input V IN = 5.5 V or GND0 to5.5±0.1±1.0±1.0µALeakage CurrentI CC Maximum Quiescent V IN = V CC or GND 5.5 2.02040µASupply CurrentAC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 nsT A = 25°C T A < 85°C–55°C<T A<125°C Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit t PLH ,Maximum V CC = 3.3± 0.3 V C L = 15 pF 3.58.910.512.0ns t PHL Propagation Delay, C L = 50 pF 4.811.413.015.5 Input A or B to YV CC = 5.0± 0.5 V C L = 15 pF 2.5 5.5 6.58.0C L = 50 pF 3.87.08.09.5C IN Maximum Input4101010pFCapacitanceTypical @ 25°C, V CC = 5.0 VC PD Power Dissipation Capacitance (Note 6)22pF6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD •V CC•f in + I CC . C PD is used to determine the no–load dynamic power consumption; P D = C PD • V CC 2 •f in + I CC •V CC .MC74VHC1GU04*Includes all probe and jig capacitanceFigure 5. Test CircuitDEVICE ORDERING INFORMATIONDevice NomenclatureMC74VHC1GU04DFT1MC 74VHC1G U04DF T1SC–70/SC–88A/178 mm (7 in)SOT–3533000 Unit MC74VHC1GU04DFT2MC 74VHC1G U04DF T2SC–70/SC–88A/178 mm (7 in)SOT–3533000 Unit MC74VHC1GU04DFT4MC 74VHC1G U04DF T4SC–70/SC–88A/330 mm (13 in)SOT–35310,000 Unit MC74VHC1GU04DTT1MC 74VHC1G U04DT T1SOT–23/TSOPS/178 mm (7 in)SC–593000 Unit MC74VHC1GU04DTT3MC74VHC1GU04DTT3SOT–23/TSOPS/330 mm (13 in)SC–5910,000 UnitDeviceOrder NumberCircuitIndicator TempRange IdentifierTechnology DeviceFunction PackageSuffix Tape &Reel Suffix Package Type (Name/SOT#/Common Name)Tape and Reel SizeFigure 4. Switching Waveforms。