TC74AC244P中文资料
74AHCT244中文资料
TEST CONDITIONS
Tamb (°C)
SYMBOL PARAMETER
OTHER
25
−40 to +85 −40 to +125 UNIT
VCC (V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VIH
HIGH-level input
voltage
2.0
1.5 −
−
For TSSOP packages: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Sep 28
5
元器件交易网
Philips Semiconductors
Octal buffer/line driver; 3-state
CO
output capacitance
4.0 4.0 pF
CPD
power dissipation CL = 50 pF;
10
12
pF
capacitance
f = 1 MHz;
notes 1 and 2
Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW).
IO
DC output source or sink current −0.5 V < VO < VCC + 0.5 V
ICC
DC VCC or GND current
Tstg
storage temperature range
PD
power dissipation per package for temperature range: −40 to +125 °C; note 2
TC74AC377P资料
TOSHIBA CMOS Digital Integrated Circuit Silicon MonolithicTC74AC377P,TC74AC377F Octal D-Type Flip-FlopThe TC74AC377 is an advanced high speed CMOS OCTALD-TYPE FLIP FLOP fabricated with silicon gate anddouble-layer metal wiring C2MOS technology.It achieves the high speed operation similar to equivalentBipolar Schottky TTL while maintaining the CMOS low powerdissipation.This 8-bit D-type flip-flop is controlled by a clock input (CK)and an enable input (G)The signal level applied to the D inputs are transferred to Qoutputs during the positive going transition of CK.All inputs are equipped with protection circuits against staticdischarge or transient excess voltage.Features•High speed: f max= 140 MHz (typ.) at V CC= 5 V•Low power dissipation: I CC= 8 μA (max) at Ta = 25°C•High noise immunity: V NIH= V NIL= 28% V CC (min)•Symmetrical output impedance: |I OH| = I OL= 24 mA (min)Capability of driving 50 Ωtransmissionlines.•Balanced propagation delays: tpLH∼ − t pHL•Wide operating voltage range: V CC (opr) = 2 to 5.5 V•Pin and function compatible with 74F377Pin AssignmentTC74AC377PTC74AC377FWeightDIP20-P-300-2.54A : 1.30 g (typ.)SOP20-P-300-1.27A : 0.22 g (typ.)IEC Logic SymbolTruth TableX: Don’t careSystem DiagramAbsolute Maximum Ratings (Note 1)Characteristics Symbol Rating Unit Supply voltage range V CC−0.5 to 7.0 VDC input voltage V IN−0.5 to V CC+ 0.5 VDC output voltage V OUT−0.5 to V CC+ 0.5 VInput diode current I IK±20 mA Output diode current I OK±50 mA DC output current I OUT±50 mA DC V CC/ground current I CC±200 mA Power dissipation P D500 (DIP) (Note 2)/180 (SOP) mWStorage temperature T stg−65 to 150 °CNote 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantlyeven if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolutemaximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Note 2: 500 mW in the range of Ta =−40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be applied up to 300 mW.Operating Ranges (Note)Characteristics Symbol Rating Unit Supply voltage V CC 2.0 to 5.5 VInput voltage V IN0 to V CC VOutput voltage V OUT0 to V CC VOperating temperature T opr−40 to 85 °CInput rise and fall time dt/dV 0 to 100 (V CC= 3.3 ± 0.3 V)0 to 20 (V CC= 5 ± 0.5 V)ns/VNote: The operating ranges must be maintained to ensure the normal operation of the device.Unused inputs must be tied to either VCC or GND.Electrical CharacteristicsDC CharacteristicsTest Condition Ta = 25°C Ta =−40 to85°CCharacteristics SymbolV CC (V)Min Typ.Max Min MaxUnitHigh-level input voltage V IH⎯2.03.05.51.502.103.85⎯⎯⎯⎯⎯⎯1.502.103.85⎯⎯⎯VLow-level input voltage V IL⎯2.03.05.5⎯⎯⎯⎯⎯⎯0.500.901.65⎯⎯⎯0.500.901.65VI OH=−50 μA2.03.04.51.92.94.42.03.04.5⎯⎯⎯1.92.94.4⎯⎯⎯High-level output voltage V OHV IN= V IH orV IL I OH=−4 mAI OH=−24 mAI OH=−75 mA (Note)3.04.55.52.583.94⎯⎯⎯⎯⎯⎯⎯2.483.803.85⎯⎯⎯VI OL= 50 μA2.03.04.5⎯⎯⎯0.00.00.00.10.10.1⎯⎯⎯0.10.10.1Low-level output voltage V OLV IN= V IH orV IL I OL= 12 mAI OL= 24 mAI OL= 75 mA (Note)3.04.55.5⎯⎯⎯⎯⎯⎯0.360.36⎯⎯⎯⎯0.440.441.65VInput leakagecurrentI IN V IN= V CC or GND 5.5⎯⎯±0.1 ⎯±1.0μAQuiescent supplycurrentI CC V IN= V CC or GND 5.5⎯⎯ 8.0 ⎯ 80.0μA Note: This spec indicates the capability of driving 50 Ω transmission lines.One output should be tested at a time for a 10 ms maximum duration.Timing Requirements (input: t r= t f= 3 ns)AC Characteristics (C L= 50 pF, R L= 500 Ω, input: t r= t f= 3 ns)Test Condition Ta = 25°C Ta =−40 to85°CCharacteristics SymbolV CC(V)Min Typ.Max Min MaxUnitPropagation delay time(CK-Q) t pLHt pHL⎯3.3 ± 0.35.0 ± 0.5⎯⎯10.67.417.610.61.01.020.012.0nsMaximum clock frequency f max⎯3.3 ± 0.35.0 ± 0.5508095140⎯⎯5080⎯⎯MHzInput capacitance C IN⎯⎯ 5 10 ⎯ 10 pFPower dissipation capacitance C PD(Note)⎯⎯ 30 ⎯⎯⎯ pFNote: C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.Average operating current can be obtained by the equation:I CC (opr) = C PD･V CC･f IN+ I CC/8 (per F/F)And the total C PD when n pcs. of flip flop operate can be gained by the following equation:C PD (total)= 20 + 10･nWeight: 1.30 g (typ.)Weight: 0.22 g (typ.)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
HD74ACT244中文资料
HD74AC244/HD74ACT244Octal Buffer/Line Driver with 3-State OutputDescriptionThe HD74AC244/HD74ACT244 is an octal buffer and line driver designed to be employed as a memory address driver, clock driver and bus-oriented transmitter/receive which provides improved PC board density.Features• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers• Outputs Source/Sink 24 mA• HD74ACT244 has TTL-Compatible InputsPin ArrangementHD74AC244/HD74ACT2442Truth TablesInputs OE 1D Outputs (Pins 12, 14, 16, 18)L L L L H H H XZInputs OE 2D Outputs (Pins 3, 5, 7, 9)L L L L H H H XZH :High Voltage Level L :Low Voltage Level X :ImmaterialZ:High ImpedanceDC Characteristics (unless otherwise specified)ItemSymbol Max Unit ConditionMaximum quiescent supply current I CC 80µA V IN = V CC or ground, V CC = 5.5 V,Ta = Worst caseMaximum quiescent supply current I CC 8.0µA V IN = V CC or ground, V CC = 5.5 V,Ta = 25°CMaximum additional I CC /input (HD74ACT244)I CCT1.5mAV IN = V CC – 2.1 V, V CC = 5.5 V,Ta = Worst caseHD74AC244/HD74ACT2443AC Characteristics: HD74AC244Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation delay t PLH3.3 1.0 6.59.0 1.010.0nsData to output 5.0 1.0 5.07.0 1.07.5Propagation delay t PHL 3.3 1.0 6.59.0 1.010.0ns Data to output 5.0 1.0 5.07.0 1.07.5Output enable time t PZH 3.3 1.0 6.010.5 1.011.0ns 5.0 1.0 5.07.0 1.08.0Output enable time t PZL 3.3 1.07.510.0 1.011.0ns 5.0 1.0 5.58.0 1.08.5Output disable time t PHZ 3.3 1.07.010.0 1.010.5ns 5.0 1.0 6.59.0 1.09.5Output disable time t PLZ 3.3 1.07.510.5 1.011.5ns 5.01.06.59.01.09.5Note:1.Voltage Range 3.3 is 3.3 V ± 0.3 VVoltage Range 5.0 is 5.0 V ± 0.5 VAC Characteristics: HD74ACT244Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation delay Data to output t PLH 5.0 1.0 6.59.0 1.010.0ns Propagation delay Data to output t PHL 5.0 1.07.09.0 1.010.0ns Output enable time t PZH 5.0 1.0 6.08.5 1.09.5ns Output enable time t PZL 5.0 1.07.09.5 1.010.5ns Output disable time t PHZ 5.0 1.07.09.5 1.010.5ns Output disable time t PLZ5.01.07.510.01.010.5nsNote:1.Voltage Range 5.0 is 5.0 V ± 0.5 VHD74AC244/HD74ACT2444CapacitanceItemSymbol Typ Unit Condition Input capacitanceC IN 4.5pF V CC = 5.5 V Power dissipation capacitanceC PD45.0pFV CC = 5.0 VHitachi Code JEDEC EIAJWeight (reference value)DP-20N —Conforms 1.26 gUnit: mm元器件交易网Hitachi Code JEDEC EIAJWeight (reference value)TTP-20DA ——0.07 gUnit: mm*Dimension including the plating thicknessBase material dimension元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
74F244PC资料
© 1999 Fairchild Semiconductor Corporation DS009501April 1988Revised July 199974F240 • 74F241 • 74F244 Octal Buffers/Line Drivers with 3-STATE Outputs74F240 • 74F241 • 74F244Octal Buffers/Line Drivers with 3-STATE OutputsGeneral DescriptionThe 74F240, 74F241 and 74F244 are octal buffers and line drivers designed to be employed as memory and address drivers, clock drivers and bus-oriented transmitters/receiv-ers which provide improved PC and board density.Featuress 3-STATE outputs drive bus lines or buffer memory address registers s Outputs sink 64 mA (48 mA mil)s 12 mA source currents Input clamp diodes limit high-speed termination effectsOrdering Code:Devices also available in T ape and Reel. Specify by appending the suffix letter “X” to the ordering code.Connection Diagrams74F24074F24174F244Order Code Package NumberPackage Description74F240SC M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300 Wide 74F240SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide 74F240PC N20A 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide 74F241SC M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300 Wide 74F241SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide 74F241PC N20A 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide 74F244SC M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300 Wide 74F244SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide 74F244MSA MSA2020-Lead Shrink Small Outline Package (SSOP), EIAJ TYPE II, 5.3mm Wide 74F244PCN20A20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide 274F 240 • 74F 241 • 74F 244Logic SymbolsIEEE/IEC 74F240IEEE/IEC 74F241IEEE/IEC 74F244Unit Loading/Fan OutNote 1: Worst-case 74F240 enabled; 74F241, 74F244 disabledTruth Tables74F24074F24174F244H = HIGH Voltage Level L = LOW Voltage Level X = ImmaterialZ = High ImpedancePin Names DescriptionU.L.Input I IH /I IL HIGH/LOW Output I OH /I OL OE 1, OE 23-STATE Output Enable Input (Active LOW) 1.0/1.66720 µA/−1 mA OE 23-STATE Output Enable Input (Active HIGH) 1.0/1.66720 µA/−1 mA I 0–I 7Inputs (74F240) 1.0/1.667 (Note 1)20 µA/−1 mA I 0–I 7Inputs (74F241, 74F244)1.0/2.667 (Note 1)20 µA/−1.6 mA O 0–O 7, O 0–O 7Outputs600/106.6 (80)−12 mA/64 mA (48 mA)OE 1D 1n O 1n OE 2D 2n O 2n H X Z H X Z L H L L H L LLH LLHOE 1D 1n O 1n OE 2D 2n O 2n H X Z L X Z L H H H H H LLLHLLOE 1D 1n O 1n OE 2D 2n O 2n H X Z H X Z L H H L H H LLLLLL74F240 • 74F241 • 74F244Absolute Maximum Ratings (Note 2)Recommended Operating ConditionsNote 2: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.Note 3: Either voltage limit or current limit is sufficient to protect inputs.DC Electrical CharacteristicsStorage Temperature−65°C to +150°C Ambient Temperature under Bias −55°C to +125°C Junction Temperature under Bias −55°C to +150°C V CC Pin Potential to Ground Pin −0.5V to +7.0V Input Voltage (Note 3)−0.5V to +7.0V Input Current (Note 3)−30 mA to +5.0 mAVoltage Applied to Output in HIGH State (with V CC = 0V)Standard Output −0.5V to V CC 3-STATE Output −0.5V to +5.5V Current Applied to Output in LOW State (Max)twice the rated I OL (mA)ESD Last Passing Voltage (Min)4000V Free Air Ambient Temperature 0°C to +70°C Supply Voltage+4.5V to +5.5VSymbol ParameterMin TypMaxUnits V CCConditionsV IH Input HIGH Voltage 2.0V Recognized as a HIGH Signal V IL Input LOW Voltage 0.8V Recognized as a LOW Signal V CD Input Clamp Diode Voltage −1.2VMin I IN = −18 mA V OHOutput HIGH 10% V CC 2.4VMinI OH = −3 mA Voltage10% V CC 2.0I OH = −15 mA 5% V CC 2.7I OH = −3 mA V OL Output LOW 10% V CC 0.55V Min I OL = 64 mA VoltageI IH Input HIGH 5.0µA Max V IN = 2.7V CurrentI BVI Input HIGH Current 7.0µA Max V IN = 7.0V Breakdown Test I CEX Output HIGH 50µA Max V OUT = V CC Leakage Current V ID Input Leakage 4.75V 0.0I ID = 1.9 µATestAll Other Pins Grounded I OD Output Leakage 3.75µA 0.0V IOD = 150 mVCircuit Current All Other Pins GroundedI IL Input LOW Current −1.0mAMaxV IN = 0.5V (OE 1, OE 2, OE 2, D n 74F240))−1.6V IN = 0.5V (D n (74F241, 74F244))I OZH Output Leakage Current 50µA Max V OUT = 2.7V I OZL Output Leakage Current −50µA Max V OUT = 0.5V I OS Output Short-Circuit Current −100−225mA Max V OUT = 0V I ZZ Bus Drainage Test500µA 0.0V V OUT = 5.25V I CCH Power Supply Current (74F240)1929mA Max V O = HIGH I CCL Power Supply Current (74F240)5075mA Max V O = LOW I CCZ Power Supply Current (74F240)4263mA Max V O = HIGH Z I CCH Power Supply Current 4060mA Max V O = HIGH (74F241, 74F244)I CCL Power Supply Current 6090mA Max V O = LOW (74F241, 74F244)I CCZPower Supply Current 6090mAMaxV O = HIGH Z(74F241, 74F244) 474F 240 • 74F 241 • 74F 244AC Electrical CharacteristicsSymbolParameterT A = +25°CT A = −55°C to +125°CT A = 0°C to +70°CUnitsV CC = +5.0V V CC = 5.0V V CC = 5.0V C L = 50 pFC L = 50 pF C L = 50 pF MinTyp Max Min Max Min Max t PLH Propagation Delay 3.0 5.17.0 3.09.0 3.08.0ns t PHL Data to Output (74F240) 2.0 3.5 4.7 2.0 6.0 2.0 5.7t PZH Output Enable Time (74F240)2.03.54.7 2.0 6.5 2.05.7ns t PZL 4.06.99.0 4.010.5 4.010.0t PHZ Output Disable Time (74F240) 2.0 4.0 5.3 2.0 6.5 2.0 6.3t PLZ 2.0 6.08.0 2.012.5 2.09.5t PLH Propagation Delay2.5 4.0 5.2 2.0 6.5 2.5 6.2ns t PHL Data to Output (74F241, 74F244) 2.5 4.0 5.2 2.07.0 2.5 6.5t PZH Output Enable Time 2.0 4.3 5.7 2.07.0 2.0 6.7ns t PZL (74F241, 74F244) 2.0 5.47.0 2.08.5 2.08.0t PHZ Output Disable Time 2.0 4.5 6.0 2.07.0 2.07.0t PLZ(74F241, 74F244)2.04.56.02.07.52.07.074F240 • 74F241 • 74F244Physical Dimensions inches (millimeters) unless otherwise noted20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300 WidePackage Number M20B20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm WidePackage Number M20D 674F 240 • 74F 241 • 74F 244Physical Dimensions inches (millimeters) unless otherwise noted (Continued)20-Lead Shrink Small Outline Package (SSOP), EIAJ TYPE II, 5.3mm WidePackage Number MSA20774F240 • 74F241 • 74F244 Octal Buffers/Line Drivers with 3-STATE OutputsPhysical Dimensions inches (millimeters) unless otherwise noted (Continued)20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 WidePackage Number N20AFairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:1.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be rea-sonably expected to result in a significant injury to the user.2. A critical component in any component of a life support device or system whose failure to perform can be rea-sonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.。
IN74ACT244中文资料
O CTAL 3-S TATE N ONINVERTINGB UFFER/L INE D RIVER/L INE R ECEIVERHigh-Speed Silicon-Gate CMOS The IN74ACT244 is identical in pinout to the LS/ALS244, HC/HCT244. The IN74ACT244 may be used as a level converterfor interfacing TTL or NMOS outputs to High Speed CMOSinputs.designed to be used with 3-state memory address drivers, clocknoninverting outputs and two active-low output enables.•TTL/NMOS Compatible Input Levels•Outputs Directly Interface to CMOS, NMOS, and TTL•Operating Voltage Range: 4.5 to 5.5 V •Low Input Current: 1.0 µA; 0.1 µA @ 25°C •Outputs Source/Sink 24 mAORDERING INFORMATIONIN74ACT244N PlasticIN74ACT244DW SOICT A = -40° to 85° C for allpackagesFUNCTION TABLEInputs Outputs Enable A,Enable BA,B YA,YBL L LL H HH X ZX=don’t careZ = high impedanceLOGIC DIAGRAMPIN 20=V CCPIN 10 = GNDPIN ASSIGNMENTMAXIMUM RATINGS*Symbol Parameter ValueUnit V CC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 VV IN DC Input Voltage (Referenced to GND) -0.5 to V CC +0.5 VV OUT DC Output Voltage (Referenced to GND) -0.5 to V CC +0.5 VI IN DC Input Current, per Pin ±20 mAI OUT DC Output Sink/Source Current, per Pin ±50 mAI CC DC Supply Current, V CC and GND Pins ±50 mAP D Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ 750500mWTstg Storage Temperature -65 to +150 °CT L Lead Temperature, 1 mm from Case for 10Seconds(Plastic DIP or SOIC Package)260 °C*Maximum Ratings are those values beyond which damage to the device may occur.Functional operation should be restricted to the Recommended Operating Conditions.+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°CSOIC Package: - 7 mW/°C from 65° to 125°CRECOMMENDED OPERATING CONDITIONSSymbol Parameter MinMaxUnit V CC DC Supply Voltage (Referenced to GND) 4.5 5.5 VV IN, V OUT DC Input Voltage, Output Voltage (Referenced toGND)0 V CC VT J Junction Temperature (PDIP) 140 °CT A Operating Temperature, All Package Types -40 +85 °CI OH Output Current - High -24 mAI OL Output Current - Low 24 mAt r, t f Input Rise and Fall Time * (except Schmitt Inputs) V CC=4.5 VV CC =5.5 V108.0ns/V* VINfrom 0.8 V to 2.0 VThis device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V IN and V OUT should be constrained to the range GND≤(V IN or V OUT)≤V CC.Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs must be left open.DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)V CC Guaranteed LimitsSymbol Parameter Test Conditions V 25 °C -40°C to85°CUnit V IH Minimum High-Level Input VoltageV OUT = V CC -0.1 V 4.5 5.5 2.0 2.0 2.0 2.0 VV IL Maximum Low -Level Input VoltageV OUT =0.1 V 4.5 5.5 0.8 0.8 0.8 0.8 VV OH Minimum High-Level Output VoltageI OUT ≤ -50 µA 4.5 5.5 4.4 5.4 4.4 5.4 V*V IN =V IHI OH =-24 mAI OH =-24 mA4.55.5 3.86 4.86 3.76 4.76 V OL Maximum Low-Level Output VoltageI OUT ≤ 50 µA 4.5 5.5 0.1 0.1 0.1 0.1 V*V IN =V ILI OL =24 mAI OL =24 mA4.55.5 0.36 0.36 0.44 0.44 I IN Maximum Input Leakage CurrentV IN =V CC or GND 5.5 ±0.1 ±1.0 µAI OZ Maximum Three-State Leakage Current V IN (OE)=V IL or V IH V IN =V CC or GND V OUT =V CC or GND5.5 ±0.5 ±5.0 µA∆I CCT Additional MaxI CC /InputV IN =V CC - 2.1 V 5.5 1.5 mA I OLD +Minimum Dynamic Output CurrentV OLD =1.65 V Max 5.5 75 mAI OHD +Minimum Dynamic Output CurrentV OHD =3.85 V Min 5.5 -75 mAI CC Maximum Quiescent Supply Current(per Package)V IN =V CC or GND 5.5 8.0 80 µAAll outputs loaded; thresholds on input associated with output under test. +Maximum test duration 2.0 ms, one output loaded at a time.AC ELECTRICAL CHARACTERISTICS(V CC=5.0 V ± 10%, C L=50pF,Input t r=t f=3.0 ns)LimitsGuaranteedUnitSymbol Parameter 25 °C -40°C to85°CMax MinMaxMin t PLH Propagation Delay, A to YA or B to YB2.0 9.0 1.5 10.0 ns(Figure 1)2.0 9.0 1.5 10.0 nst PHL Propagation Delay, A to YA or B to YB(Figure 1)1.5 8.5 1.0 9.5 nst PZH Propagation Delay, Output Enable to YAor YB (Figure 2)t PZL Propagation Delay, Output Enable to YA2.0 9.5 1.5 10.5 nsor YB (Figure 2)2.0 9.5 1.5 10.5 nst PHZ Propagation Delay, Output Enable to YAor YB (Figure 2)2.5 10.0 2.0 10.5 nst PLZ Propagation Delay, Output Enable to YAor YB (Figure 2)C IN Maximum Input Capacitance 4.5 4.5 pFTypical @25°C,V CC=5.0VC PD Power Dissipation Capacitance 45 pFFigure 1. Switching Waveforms Figure 2. Switching Waveforms。
MC74LCX244 低电压三态非反转八路缓冲器说明书
MC74LCX244Octal Buffer, Non-Inverting, Low Voltage, 3-StateThe MC74LCX244 is a high performance, non−inverting octal buffer operating from a 2.3 to 5.5 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A V I specification of 5.5 V allows MC74LCX244 inputs to be safely driven from 5 V devices. The MC74LCX244 is suitable for memory address driving and all TTL level bus oriented transceiver applications.Current drive capability is 24 mA at the outputs. The Output Enable (OE) input, when HIGH, disables the output by placing them in a HIGH Z condition.Features•Designed for 2.3 to 5.5 V V CC Operation•5 V Tolerant − Interface Capability With 5 V TTL Logic •Supports Live Insertion and Withdrawal•I OFF Specification Guarantees High Impedance When V CC = 0 V •LVTTL Compatible•LVCMOS Compatible•24 mA Balanced Output Sink and Source Capability•Near Zero Static Supply Current in All Three Logic States (10 m A) Substantially Reduces System Power Requirements •Latchup Performance Exceeds 500 mA•ESD Performance:♦Human Body Model >2000 V♦Machine Model >200 V•NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant120MARKING DIAGRAMSA=Assembly LocationL, WL=Wafer LotY, YY=YearW, WW=Work WeekG or G=Pb−Free PackageSOIC−20 WBDW SUFFIXCASE 751DLCX244AWLYYWWGLCX244ALYW GGTSSOP−20DT SUFFIXCASE 948E201See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.ORDERING INFORMATION(Note: Microdot may be in either location)QFN20MN SUFFIXCASES 485AA& 485CBLCX244ALYW GGSOIC−20 WBTSSOP−20QFN20 − 485AA QFN20 − 485CB244ALYW GGFigure 1. Pinouts: 20−Lead (Top View)H = High Voltage Level L = Low Voltage Level Z = High Impedance StateX = High or Low Voltage Level and Transitions are Acceptable For I CC reasons, DO NOT FLOAT InputsFigure 2. Logic Diagram192018171615142134567V CC 13812911102OE 1O02D01O12D11O22D21O32D31OE1D02O01D12O11D22O21D32O3GND1OE1D01O01D11O11D21O21D31O32OE 2D02O02D12O12D22O22D32O3PIN #1291912201011QFNMAXIMUM RATINGSSymbol Parameter Value Condition Units V CC DC Supply Voltage−0.5 to +7.0V V I DC Input Voltage−0.5 ≤ V I≤ +7.0V V O DC Output Voltage−0.5 ≤ V O≤ +7.0Output in 3−State V−0.5 ≤ V O≤ V CC + 0.5Output in HIGH or LOW State (Note 1)VI IK DC Input Diode Current−50V I < GND mAI OK DC Output Diode Current−50V O < GND mA+50V O > V CC mAI O DC Output Source/Sink Current±50mAI CC DC Supply Current Per Supply Pin±100mAI GND DC Ground Current Per Ground Pin±100mAT STG Storage Temperature Range−65 to +150°C T L Lead Temperature, 1 mm from Casefor 10 SecondsT L = 260°C T J Junction Temperature Under Bias T J = 150°C q JA Thermal Resistance (Note 2)q JA = 140°C/W MSL Moisture Sensitivity Level 1Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.I O absolute maximum rating must be observed.2.Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. RECOMMENDED OPERATING CONDITIONSSymbol Parameter Min Typ Max Units V CC Supply VoltageOperatingData Retention Only 2.01.52.5,3.32.5,3.35.55.5VV I Input Voltage0 5.5V V O Output VoltageHIGH or LOW State 3−State 0V CC5.5VI OH HIGH Level Output CurrentV CC = 3.0 V − 3.6 V V CC = 2.7 V − 3.0 V −24−12mAI OL LOW Level Output CurrentV CC = 3.0 V − 3.6 V V CC = 2.7 V − 3.0 V 2412mAT A Operating Free−Air Temperature−55+125°CD t/D V Input Transition Rise or Fall Rate, V IN from 0.8 V to 2.0 V, V CC = 3.0 V010ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.DC ELECTRICAL CHARACTERISTICST A = −55°C to +125°CSymbol Characteristic Condition Min Max Units V IH HIGH Level Input Voltage (Note 3) 2.3 V ≤ V CC≤ 2.7 V 1.7V2.7 V ≤ V CC≤3.6 V 2.0V IL LOW Level Input Voltage (Note 3) 2.3 V ≤ V CC≤ 2.7 V0.7V2.7 V ≤ V CC≤3.6 V0.8V OH HIGH Level Output Voltage 2.3 V ≤ V CC≤ 3.6 V; I OL = 100 m A V CC−0.2VV CC = 2.3 V; I OH = −8 mA 1.8V CC = 2.7 V; I OH = −12 mA 2.2V CC = 3.0 V; I OH = −18 mA 2.4V CC = 3.0 V; I OH = −24 mA 2.2 V OL LOW Level Output Voltage 2.3 V ≤ V CC≤ 3.6 V; I OL = 100 m A0.2VV CC = 2.3 V; I OL = 8 mA0.6V CC = 2.7 V; I OL = 12 mA0.4V CC = 3.0 V; I OL = 16 mA0.4V CC = 3.0 V; I OL = 24 mA0.55I OZ3−State Output Current V CC = 3.6 V, V IN = V IH or V IL,V OUT = 0 to 5.5 V±5m AI OFF Power Off Leakage Current V CC = 0, V IN = 5.5 V or V OUT = 5.5 V10m AI IN Input Leakage Current V CC = 3.6 V, V IN = 5.5 V or GND±5m AI CC Quiescent Supply Current V CC = 3.6 V, V IN = 5.5 V or GND10m AD I CC Increase in I CC per Input 2.3 ≤ V CC≤ 3.6 V; V IH = V CC − 0.6 V500m A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.3.These values of V I are used to test DC electrical characteristics only.AC CHARACTERISTICS(t R = t F = 2.5 ns; R L = 500 W)LimitsT A = −55°C to +125°CV CC = 3.0 V to 3.6 V V CC = 2.7 V V CC = 2.5 V ±0.2C L = 50 pF C L = 50 pF C L = 30 pFSymbol Parameter Waveform Min Max Min Max Min Max Unitst PLH t PHL Propagation DelayInput to Output1 1.51.56.56.51.51.57.57.51.51.57.87.8nst PZH t PZL Output Enable Time toHigh and Low Level2 1.51.58.08.01.51.59.09.01.51.51010nst PHZ t PLZ Output Disable Time FromHigh and Low Level2 1.51.57.07.01.51.58.08.01.51.58.48.4nst OSHL t OSLH Output−to−Output Skew(Note 4)1.01.0ns4.Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t OSHL) or LOW−to−HIGH (t OSLH); parameter guaranteed by design.DYNAMIC SWITCHING CHARACTERISTICST A = +25°CSymbol Characteristic Condition Min Typ Max UnitsV OLP Dynamic LOW Peak Voltage (Note 5)V CC = 3.3 V, C L = 50 pF, V IH = 3.3 V, V IL = 0 VV CC = 2.5 V, C L = 30 pF, V IH = 2.5 V, V IL = 0 V 0.80.6VV OLV Dynamic LOW Valley Voltage (Note 5)V CC = 3.3 V, C L = 50 pF, V IH = 3.3 V, V IL = 0 VV CC = 2.5 V, C L = 30 pF, V IH = 2.5 V, V IL = 0 V −0.8−0.6V5.Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output ismeasured in the LOW state.CAPACITIVE CHARACTERISTICSSymbol ParameterConditionTypical Units C IN Input Capacitance V CC = 3.3 V, V I = 0 V or V CC 7pF C OUT Output CapacitanceV CC = 3.3 V, V I = 0 V or V CC 8pF C PDPower Dissipation Capacitance10 MHz, V CC = 3.3 V, V I = 0 V or V CC25pFV CC0 VV OHV OL1Dn, 2Dn1On, 2OnV CC0 V≈ 0 V1OE, 2OE1On, 2On≈ 3.0 V1On, 2OnFigure 3. AC WaveformsV CCV OH - 0.3 V V OL + 0.3 V GNDWAVEFORM 1 − PROPAGATION DELAYS t R = t F = 2.5 ns, 10% to 90%; f = 1 MHz; t W = 500 nsWAVEFORM 2 − OUTPUT ENABLE AND DISABLE TIMESt R = t F = 2.5 ns, 10% to 90%; f = 1 MHz; t W = 500 nsSymbol V CC3.3 V ±0.3 V2.7 V 2.5 V ±0.2 VVmi Vmo V HZ V LZ1.5 V 1.5 V V OL + 0.3 V V OH − 0.3 V1.5 V 1.5 V V OL + 0.3 V V OH − 0.3 VV CC /2V CC /2V OL + 0.15 V V OH − 015 VOPENV 6 V GNDTEST SWITCH t PLH , t PHL Opent PZL , t PLZ6 V at V CC = 3.3 ±0.3 V 6 V at V CC = 2.5 ±0.2 VOpen Collector/Drain t PLH and t PHL6 V t PZH , t PHZGNDC L = 50 pF at V CC = 3.3 ±0.3 V or equivalent (includes jig and probe capacitance)C L = 30 pF at V CC = 2.5 ±0.2 V or equivalent (includes jig and probe capacitance)R L = R 1 = 500 W or equivalentR T = Z OUT of pulse generator (typically 50 W )Figure 4. Test CircuitORDERING INFORMATIONDevicePackage Shipping †MC74LCX244DWG SOIC−20 WB (Pb−Free)38 Units / Rail MC74LCX244DWR2G SOIC−20 WB (Pb−Free)1000 / Tape & Reel MC74LCX244DTG TSSOP−20(Pb−Free)75 Units / Rail MC74LCX244DTR2G TSSOP−20(Pb−Free)2500 / Tape & Reel NLV74LCX244DTR2G*TSSOP−20(Pb−Free)2500 / Tape & Reel MC74LCX244MNTWG QFN20, 2.5x4.5(Pb−Free)3000 / Tape & Reel MC74LCX244MN2TWGQFN20, 2.5x3.5(Pb−Free)3000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP CapableQFN20, 2.5x4.5 MMCASE 485AA−01ISSUE BDATE 30 APR 2010DIM MIN MAXMILLIMETERSAA10.000.05A3b0.200.30D 2.50 BSCD20.85 1.15E 4.50 BSCE2e0.50 BSCK0.20---NOTES:1.DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSIONS b APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN0.25 AND 0.30 MM FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.0.20 REF0.80 1.00L0.350.452.853.15GENERIC MARKINGDIAGRAM*XXXX= Specific Device CodeA= Assembly LocationL= Wafer LotY= YearW= Work WeekG= Pb−Free Package*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ G”,may or may not be present.BOTTOM VIEW(Note: Microdot may be in either location)QFN20, 2.5x3.5, 0.4PCASE 485CBISSUE ODATE 25 OCT 2011DIMMIN MAXMILLIMETERSAA10.000.05A3b0.150.25D 2.50 BSCD20.90 1.10E 3.50 BSCE2e0.40 BSCNOTES:1.DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSIONS b APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN0.15 AND 0.30 MM FROM TERMINAL TIP.4.COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.0.20 REF20X0.80 1.00L0.350.452.00 2.20SCALE 2:1GENERIC MARKINGDIAGRAM*XXXX= Specific Device CodeA= Assembly LocationL= Wafer LotY= YearW= Work WeekG= Pb−Free Package*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ G”,may or may not be present.L1DETAIL ALALTERNATE TERMINALCONSTRUCTIONSDETAIL BALTERNATECONSTRUCTIONS*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*20XDIMENSIONS: MILLIMETERS BOTTOM VIEWL1---0.15(Note: Microdot may be in either location)SOIC −20 WB CASE 751D −05ISSUE HDATE 22 APR 2015SCALE 1:1DIM MIN MAX MILLIMETERS A 2.35 2.65A10.100.25b 0.350.49c 0.230.32D 12.6512.95E 7.407.60e 1.27 BSC H 10.0510.55h 0.250.75L 0.500.90q0 7 NOTES:1.DIMENSIONS ARE IN MILLIMETERS.2.INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.3.DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.5.DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION.__XXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot YY = YearWW = Work WeekG= Pb −Free PackageGENERICMARKING DIAGRAM*20XDIMENSIONS: MILLIMETERS*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*RECOMMENDED*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products may not follow the Generic Marking.TSSOP −20 WB CASE 948E ISSUE DDATE 17 FEB 2016SCALE 2:1DIM A MIN MAX MIN MAX INCHES 6.600.260MILLIMETERS B 4.30 4.500.1690.177C 1.200.047D 0.050.150.0020.006F 0.500.750.0200.030G 0.65 BSC 0.026 BSC H 0.270.370.0110.015J 0.090.200.0040.008J10.090.160.0040.006K 0.190.300.0070.012K10.190.250.0070.010L 6.40 BSC 0.252 BSCM0 8 0 8 ____NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.4.DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.INTERLEAD FLASH OR PROTRUSIONSHALL NOT EXCEED 0.25 (0.010) PER SIDE.5.DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08(0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.6.TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY .7.DIMENSION A AND B ARE TO BEDETERMINED AT DATUM PLANE −W −.DETAIL E6.400.252------GENERICMARKING DIAGRAM*XXXX XXXX ALYW G G16X0.360.65PITCHSOLDERING FOOTPRINTA = Assembly Location L = Wafer Lot Y = YearW = Work WeekG = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.(Note: Microdot may be in either location)ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORT North American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative ◊。
AiP74HC244中文资料
3.3.3、交流参数 1 （Tamb=25℃，GND=0，tr=tf=6.0ns，CL=50pF，见图 5）
参数名称
符号
测试条件
最小 典型
最大 单 位
VCC=2.0V
－
30
110
ns
nAn 到 nYn 的传输延时
tPHL/tPLH
VCC=4.5V VCC=6.0V
－
11
22
ns
－
9
19
ns
见图 3 VCC=5V;CL=15pF －
1、概 述
AiP74HC244是一款高速硅栅CMOS器件，其引脚兼容低功耗肖特基TTL（LSTTL）系列。该电路完全 符合JEDEC标准no.7A。
AiP74HC244是一款带三态输出控制的八路缓冲器/线路驱动器。三态输出端由输入使能端（1 OE
和2 OE ）控制。当使能端（n OE ）为高电平时，输出端呈现高阻态。
VCC=6.0V ,IO=20uA
－
VCC=4.5V ,IO=6.0mA
－
VCC=6.0V ,IO=7.8mA
－
输入漏电流
ILI
VI =VCC 或 GND, VCC=6.0V
－
截止状态输出电流 IOZ VI =VIH 或 VIL, Vo=VCC 或 GND, VCC=6.0V －
静态电流
ICC VI =VCC 或 GND, VCC=6.0V, IO=0
最小 1.5 3.15 4.2 － － － 1.9 4.4 5.9 3.84 5.34 － － － －
典型 － － － － － － － － － － － － － － －
最大 － － － 0.5 1.35 1.8 － － － － － 0.1 0.1 0.1 0.33
74act244t工作原理
74ACT244T工作原理1.简介本文将介绍74A CT244T芯片的工作原理。
74A CT244T是一种高速C M OS（互补金属氧化物半导体）非反相缓冲器/放大器，具有广泛的应用领域。
我们将深入探讨其内部构造和工作原理，以帮助读者更好地了解该芯片的功能和性能。
2.构造和功能74AC T244T芯片由多个逻辑门组成，包括六个非反相缓冲器。
每个缓冲器都能够接受输入信号并输出被放大的信号。
该芯片还具有使输入信号反相的功能。
通过连接适当的引脚，可以实现不同的逻辑功能，如缓冲、放大、反相等。
3.工作原理3.1输入与输出74AC T244T芯片有多个引脚，其中包括输入引脚（A1-A6）和输出引脚（Y1-Y6）。
输入引脚接受外部信号作为输入，输出引脚将放大后的信号输出到外部电路中。
3.2内部结构该芯片内部包含多个晶体管以及其他电子元件。
这些元件按照特定的布局和连接方式组成非反相缓冲器电路。
布线和电子元件的优化设计使得芯片在高速工作时具有出色的性能。
3.3工作过程当输入信号在某个引脚上发生变化时，该信号将进入对应的非反相缓冲器。
缓冲器通过晶体管的导通和截止来控制信号的放大和传递。
当输入信号为高电平时，输出信号也为高电平；当输入信号为低电平时，输出信号也为低电平。
3.4异常处理在使用74A CT244T芯片时，需要注意输入信号的幅值和频率范围，以确保芯片正常工作。
当输入信号超出芯片的额定范围时，可能会导致输出信号不准确或不稳定。
此外，芯片的供电电压也应符合规定，以确保其正常运行。
4.应用领域74AC T244T芯片广泛应用于数字电路设计和通信系统中。
它可用于信号放大、缓冲、逻辑电平转换等功能。
其高速工作和稳定性使其成为许多电子设备中不可或缺的部分，如计算机、通信设备、显示器等。
5.总结通过本文的介绍，我们了解了74AC T244T芯片的构造和工作原理。
该芯片通过非反相缓冲器实现信号的放大和传递，并具有反相功能。