SUD50N03-06AP-E3中文资料

FEATURESD TrenchFET r Power MOSFETD Optimized for Low–Side Synchronous Rectifier Operation D 100% R g TestedAPPLICATIONSD DC/DC Converters D Synchronous RectifiersRoHSCOMPLIANTSUD50N03-06APVishay SiliconixNew ProductDocument Number: 73540S–52237—Rev. A, 24-Oct-051N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYV DS (V)r DS(on) (W )I D (A)a, eQ g(Typ)0.0057 @ V GS = 10 V 90300.0078 @ V GS = 4.5 V7730N-Channel MOSFETGDOrdering Information:SUD50N03-06AP—E3 (Lead (Pb)-free)TO-252SGDTop ViewDrain Connected to TabABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Source Voltage V DS 30Gate-Source VoltageV GS"20VT C = 25_C90a, e Continuous Drain Current 175T C = 70_C 75a, e Continuous Drain Current (T J = 175_C)T A = 25_C I D30b, c T A = 70_C25b, c Pulsed Drain CurrentI DM 100AContinuous Source Drain Diode Current T C = 25_C 55a, e Continuous Source-Drain Diode Current T A = 25_C I S 6.7b, c Avalanche Current Pulse L 01mH I AS 45Single Pulse Avalanche EnergyL = 0.1 mH E AS 101mJ T C = 25_C83Maximum Power Dissipation T C = 70_C 58Maximum Power DissipationT A = 25_C P D 10b, c W T A = 70_C7b, c Operating Junction and Storage Temperature RangeT J , T stg –55 to 175_C THERMAL RESISTANCE RATINGSParameterSymbolTypicalMaximumUnitMaximum Junction-to-Ambient b, d t p 10 sec R thJA 1215Maximum Junction-to-CaseSteady StateR thJC1.51.8_C/WNotes:a.Based on T C = 25_C.b.Surface mounted on 1” x 1” FR4 board.c.t = 10 secd.Maximum under steady state conditions is 50_C/W.e.Calculated based on maximum junction temperature. Package limitation current is 50 A.SUD50N03-06APVishay SiliconixNew Product2Document Number: 73540S–52237—Rev. A, 24-Oct-05SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 m A30V V DS Temperature Coefficient D V DS /T J I =25025V GS(th) Temperature Coefficient D V GS(th)/T J I D = 250 m A– 6.3mV/_C Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 1.2 2.4V Gate-Source LeakageI GSS V DS = 0 V, V GS = "20 V "100nA Zero Gate Voltage Drain Current V DS = 30 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V, T J = 55_C10m A On-State Drain Current aI D(on)V DS w 5 V, V GS = 10 V 50A Drain-Source On-State Resistance V GS = 10 V, I D = 20 A 0.00460.0057Drain-Source On-State Resistance a r DS(on)V GS = 4.5 V, I D = 20 A 0.00620.0078W Forward Transconductance ag fsV DS = 15 V, I D = 30 A70SDynamic bInput Capacitance C iss 3800Output CapacitanceC oss V DS = 15 V, V GS = 0 V, f = 1 MHz615pF Reverse Transfer Capacitance C rss 305pTotal Gate Charge V DS = 15 V, V GS = 10 V, I D = 30 A 6295Total Gate Charge Q g 3045Gate-Source Charge Q gs V DS = 15 V, V GS = 4.5 V, I D = 25 A 11nC Gate-Drain Charge Q gd 9Gate Resistance R g f = 1 MHz0.9 1.4WTurn-On Delay Time t d(on)1218Rise Timet r V 1015Turn-Off Delay Time t d(off)DD = 15 V, R L = 0.5WI D ^ 30 A, V GEN = 10 V, R = 1 W3045Fall Timet f g 812Turn-On Delay Time t d(on)2640ns Rise Timet r V 230345Turn-Off Delay Time t d(off)DD = 15 V, R L =0.6WI D ^ 25 A, V GEN = 4.5 V, R = 1 W 2540Fall Timet fg 914Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current I S T C = 25_C55c Pulse Diode Forward Current a I SM 100A Body Diode VoltageV SD I S = 6.7 A0.9 1.5V Body Diode Reverse Recovery Time t rr 65100ns Body Diode Reverse Recovery Charge Q rr 67A di/dt 100A/s T 25_C3860nC Reverse Recovery Fall Time t a I F = 6.7 A, di/dt = 100 A/m s, T J = 2550Reverse Recovery Rise Timet b15nsNotesa.Pulse test; pulse width v 300 m s, duty cycle v 2%.b.Guaranteed by design, not subject to production testing.c.Calculated based on maximum junction temperature. Package limitation current is 50 A.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SUD50N03-06APVishay SiliconixNew ProductDocument Number: 73540S–52237—Rev. A, 24-Oct-0532040608010024681013263952650.70.91.11.31.51.71.9–50–25025507510012515017510002000300040005000510152025Gate ChargeOn-Resistance vs. Drain CurrentQ g (nC)V DS – Drain-to-Source Voltage (V)C – C a p a c i t a n c e (p F )I D – Drain Current (A)CapacitanceOn-Resistance vs. Junction TemperatureT J – Junction Temperaturer D S (o n ) – O n -R e s i s t a n c e (N o r m a l i z e d )0.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00.00.5 1.0 1.5 2.0 2.5 3.0V DS – Drain-to-Source Voltage (V)V GS – Gate-to-Source Voltage (V)r D S (o n ) – O n -R e s i s t a n c e (W )V G S (V )SUD50N03-06APVishay SiliconixNew Product4Document Number: 73540S–52237—Rev. A, 24-Oct-05–50–250255075100125150175T J – Temperature (_C)Time (sec)1010000.10.010.0011001Safe Operating Area0.1110100V DS (V)*V GS u minimum V GS at which r DS(on) is specifiedI D (A )11010010000.01SUD50N03-06APVishay SiliconixNew ProductDocument Number: 73540S–52237—Rev. A, 24-Oct-055TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0255075100255075100125150175Current De-RatingD r a i n C u r r e n t (A )T C – Case Temperature (_C)0102030405060708090255075100125150175Power De-RatingT C – Case Temperature (_C)P o we rSUD50N03-06APVishay SiliconixNew Product6Document Number: 73540S–52237—Rev. A, 24-Oct-05TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)10–310–2110–110–410.1Normalized Thermal Transient Impedance, Junction-to-CaseSquare Wave Pulse Duration (sec)N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e1N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a com posite of all qualified locations. For related docum ents such as package/tape drawings, part m arking, and reliability data, see /ppg?73540.Document Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。