SFF9140中文资料

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IRFN9140中文资料

— 65
see figure 10
2.0 — 4.1 —
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die. Measured from the
ID = -18A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
ID = -18A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage
— TBD — K/W Soldered to a copper clad PC board
元器件交易网
IRFN9140 Device
Fig. 1 — Typical Output Characteristics TC = 25°C
Fig. 2 — Typical Output Characteristics TC = 150°C
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA
— — -2.0 6.2 — —
— — 31 3.7 7.0 — — — — —
—
— 0.20 — 0.22 Ω — -4.0 V — — S( )
Ω
VGS = -10V, ID = -11A
LS
Internal Source Inductance

F1004中文资料

RF CHARACTERISTICS ( WATTS OUTPUT )80General DescriptionSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.PATENTED GOLD METALIZED 80Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR,ABSOLUTE MAXIMUM RATINGS (TC = 25 C)oTotal Device Junction to Case Thermal Maximum Junction StorageTemperatureDC Drain CurrentDrain to Gate Drain to Source Gate to Source 150Watts1.2Co 200-65to 1508A30VVV7070ELECTRICAL CHARACTERISTICS (EACH SIDE)SYMBOL PARAMETERMIN TYPMAXUNITS TEST CONDITIONSSYMBOL PARAMETERMIN TYPMAXUNITSTEST CONDITIONS GpsηVSWRCommon Source Power Gai Drain EfficiencyLoad Mismatch TolerancdB %Relative13600.820:1Idq = Idq = Idq = 0.80.8A,A,A,28.0Vds =V,28.0Vds =V,28.0Vds =V, F =175MHz F =175MHz F =175MHzBvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss CossDrain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation CurrenCommon Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc6541713.20.35221321680Mho Ohm Amp pF V V pF pFmA uA 0.2Ids = A,Vgs = 0V 28.0Vds =V,Vgs = 0V Vds = 0 V,Vgs = 30V 0.4Ids =A,Vgs = VdsVds = 10V,Vgs = 5V Vgs = 20V,Ids =16Vgs = 20V,Vds = 10V28.0Vds =V, Vgs = 0V, F = 1 MHz A 28.0Vds =V, Vgs = 0V, F = 1 MHz 28.0Vds =V, Vgs = 0V, F = 1 MHzPOLYFET RF DEVICES1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@ URL:REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performancet TMC o Co C/Wo F1004polyfet rf devicesDissipation Resistance Temperature Voltage Voltage Voltage 8/1/97VDMOS TRANSISTORPOLYFET RF DEVICES1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@ URL:CAPACITANCE VS VOLTAGEIV CURVE ID AND GM VS VGSS11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHESREVISION 8/1/97。

HEDS-9140中文资料

Applications
The HEDS-9040 and 9140 provide sophisticated motion control detection at a low cost, making them ideal for high volume applications. Typical applications include printers, plotters, tape drives, and industrial and factory automation equipment.
2.16 (0.085) DEEP
1.78 ± (0.070 ± 0.004)
2.92 ± 0.10 (0.115 ± 0.004)
OPTICAL CENTER
10.16 (0.400)
OPTICAL CENTER LINE
5.46 ± 0.10 (0.215 ± 0.004)
TYPICAL DIMENSIONS IN MILLIMETERS AND (INCHES)
元器件交易网
Three Channel Optical Incremental Encoder Modules
Technical Data
HEDS-9040 HEDS-9140
Features
• Two Channel Quadrature Output with Index Pulse
1.52 (0.060)
DATE CODE
3.73 ± 0.05 (0.147 ± 0.002)
20.8 (0.82)
11.7 (0.46)
2.21 (0.087) 2.54
(0.100)
2.67 (0.105) DIA. MOUNTING THRU HOLE 2 PLACES

IRFP9140N中文资料

Starting TJ = 25°C, L = 7.1mH
RG = 25Ω, IAS = -11A. (See Figure 12)
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
元器件交易网
IRFP9140N
元器件交易网
PD - 9.1492A
PRELIMINARY
l l l l l l
IRFP9140N
HEXFET® Power MOSFET
D
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
I D = -19A
-I D , D rain-to -S o urc e C urre nt (A )
2.0
1.5
1.0
1
0.5
0.1 4 5 6 7
V D S = -2 5 V 2 0 µ s P U L S E W ID T H

IRFP9140中文资料

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. ID IDM
Pulsed Drain (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
or 407-727-9207 | Copyright © Intersil Corporation 1999
元器件交易网
IRFP9140
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Measured Between Contact Screw on Header That Is Closer to Source and Gate Pins and Center of Die
Measured From the Source Pin, 6mm (0.25in) From Header and Source Bonding Pad

国产防爆风速风向仪参数

国产防爆风速风向仪参数
产品名称：星云风速风向仪
产品特点：
- 具备防爆功能，适用于危险环境中的风速和风向测量。

- 采用国产先进技术，具有高精度和稳定性。

- 测量范围广，可满足不同环境下的需求。

- 操作简单，具有直观的显示屏，可实时显示风速和风向数据。

主要参数：
- 风速测量范围：0.3 m/s - 30 m/s
- 风速测量精度：±0.1 m/s
- 风速测量单位：m/s、km/h、mph、ft/min、ft/s、Knots
- 风向测量范围：0° - 360°
- 风向测量精度：±3°
- 风向测量方式：机械方位传感器
- 显示屏：LCD液晶显示屏，显示风速、风向、单位等信息
- 供电：内置可充电锂电池，持续工作时间约8小时
- 通信接口：RS485接口，可连接计算机或其他设备进行数据传输和记录
- 防爆等级：符合防爆标准Ex d II CT6，适用于危险环境
- 工作温度：-20℃ - 60℃
- 尺寸：150mm × 100mm × 50mm
- 重量：约500g
备注：由于这是一份虚拟制作的参数参考，所以产品名称和具体技术参数仅供参考，并不代表真实存在的产品。

TOP9140M-20E电动机保护控制器使用说明书(v2.01)OK

静电放电干扰：测控仪能承受IEC255-22-2标准规定的静
电放电试验
电磁场辐射干扰：测控仪能承受IEC255-22-3标准规定的电
磁场辐射试验
快速瞬变干扰：测控仪能承受IEC255-22-4标准规定的快
速瞬变干扰试验
脉冲群干扰：测控仪承受试验电源频率为100kHz和
1MHz ，试验电压为共模 2500V ，差模
2
TOP9140M-20E 使用说明书
第二章技术指标
2.1 环境要求指标
工作环境：
海拔：抗震：
工作温度：-10℃～55℃ 贮存温度：-20℃～75℃ 相对湿度: <95%，可达 2000 米 10g/5ms
2.2 技术参数
装置电源：
频率: 功率消耗：
85～265VAC 或 88V～346VDC （订货时请注明）对于比较重要的电动机可以选择配置双电源模块输入（两路电源均交直流通用） 50Hz（额定）电源回路不大于 8W（正常运行） /12W（保护动作）交流电压回路不大于 0.5VA/相交流电流回路不大于 0.5VA/相
1.2 产品特点
TOP9140M-20E 电动机保护控制器具有以下特点：
● 采用高可靠性工业级 CPU，数据采集速度快，测量精度高，运算处理速度快。
● 可以完成一回线路的电压、电流、有功功率、无功功率、功率因数、电度以及系统频率等各种电气参量的测量。
● 可以实时监测仪表自身运行工况，具有完善的自我监测能力。当监测到有异常情况发生时，装置自动告警，并根据情况的不同作相应的应急处理。
绝缘电阻：
电源回路、交流回路、开出回路、开入回路、外壳相互之间用开路电压500V的兆欧表测量其绝缘电阻值，正常试验大气条件下，各回路绝缘电阻不小于100MΩ。

F414涡轮风扇发动机

加力燃烧室
结构与F404的相同，火焰稳定器由中央环状V形火焰稳定器与
尾喷管
收-扩式可调尾喷管，陶瓷基复合材料的尾喷管调节片。面积比为1.6。
控制系统
双通道全权数字式电子控制(FADEC)，按风扇转速和核心机压比调节发动机工作，有故障隔离功能。
F414改进项目作为美国海军部分资助的联合技术开发计划的一部分启动于2004年，通用电气在2004年和 2006年对F414增强耐久性发动机（F414-EDE）验证机进行了两次测试，在2010年和2011年进行的两次测试中，验证发动机达到了设计目标。
F414-EDE的改进之处有以下几点：
首先F414-EDE的高压压气机是6级而不是现有F414的7级。通用电气在用现代三维计算流体力学（CFD）技术对F414的高压压气机气流进行分析后，决定增加每级压气机之间的间隔，并采用更先进的三维气动设计叶片进。重新设计的高压压气机和风扇使F414-EDE发动机的最大总流量提高到每秒84.8千克，比F414基本型高出10%。
通用电气通过把F412的核心机与F404低压压气机以及F120变循环涡扇发动机的径向火焰稳定器相结合创造出了F414。F120参加了美国空军的先进战术战斗机（ATF）发动机竞争，最后败给了普惠F119，让后者成为洛克希德F-22“猛禽”战斗机的动力装置。但最终统计数据显示F-22仅187架的产量使F119的生产数量远小于F414，所以失之东隅，收之桑榆，通用电气从美国海军这里获得了回报。
为了使“超级大黄蜂”的后机身设计的改动最小化，美国海军规定F414发动机必须能装入与F404相同的发动机舱空间，但两者安装点有所不同。
于是F414的外部尺寸与F404相同，都是3912毫米长，最大直径889毫米，这样一来增加推力就成了艰巨任务。

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元器件交易网
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS Top : -1 V 5 -1 V 0 - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
12 . 25 .
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BVDSS , (Normalized) Drain-Source Breakdown Voltage
RDS(on) , (Normalized) Drain-Source On-Resistance
4 O
o o
Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=5.0mH, I =-13.2A, V =-25V, R =27Ω *, Starting T =25oC O AS DD G J 3 _ _ _ O ISD <-17A, di/dt < 450A/µs, VDD < BVDSS , Starting TJ =25oC 4 _ O Pulse Test : Pulse Width = 250µs, Duty Cycle < 2% 5 O Essentially Independent of Operating Temperature
Fig 6. Gate Charge vs. Gate-Source Voltage
1 0
10 50
10 00
C oss @Nts: oe 1 V =0V . GS 2 f=1Mz . H
-VGS , Gate-Source Voltage [V]
C iss
Capacitance [pF]
V =-0V 2 DS V =-0V 5 DS V =-0V 8 DS
o
05 .
08 . -5 7
10 5
15 7
20 0
00 . -5 7
TJ , Junction Temperature [ C]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
-ID , Drain Current [A]
Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y
SFF9140
Fig 2. Transfer Characteristics
-ID , Drain Current [A]
-ID , Drain Current [A]
11 0
11 0
1 5 oC 7 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 4 3 2 0 µs P l e T s . 5 us et 6 8 1 0
5
50 0
C rss
@Nts:I =1 A oe D -7 0 0 1 0 2 0 3 0 4 0 5 0
00 1 0
11 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
元器件交易网
SFF9140
Fig 7. Breakdown Voltage vs. Temperature
20 .
11 .
15 .
10 .
10 . @Nts: oe 1 V =-0V . GS 1 2 I =-. A . D 85 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0
09 .
@Nts: oe 1 V =0V . GS 2 I = - 5 µA . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2
Fig 10. Max. Drain Current vs. Case Temperature
SFF9140
BVDSS = -100 V RDS(on) = 0.2 Ω ID = -13.2 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
4 O 4 O
o
V/ C ID=-250µA V nA5V,f =1MHz See Fig 5 VDD=-50V,ID=-17A, RG=12 Ω See Fig 13 VDS=-80V,VGS=-10V, ID=-17A See Fig 6 & Fig 12
05 .
04 . V =-0V 1 GS 03 .
11 0
02 .
10 0 1 5 oC 7 2 oC 5 1 -1 0 @Nts: oe 1 V =0V . GS us et 2 2 0 µs P l e T s . 5 15 . 20 . 25 . 30 . 35 . 40 . 45 .
01 . V =-0V 2 GS 00 . 0 8 1 6 2 4 3 2 4 0 @ N t : T = 2 oC oe J 5 4 8 5 6 6 4
10 0 @Nts: oe 1 2 0 µs P l e T s . 5 us et 2 T = 2 oC . C 5 1 -1 0 10 0 11 0
- 5 oC 5 1 -1 0 2 4
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
06 .
Fig 4. Source-Drain Diode Forward Voltage
-IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ] Drain-Source On-Resistance
o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-100V VDS=-80V,TC=150 C VGS=-10V,ID=-6.6A VDS=-40V,ID=-6.6A
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
o
C/W
Rev. A
元器件交易网
SFF9140
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.11 ------8.9 240 83 14 22 45 26 43 7.4 17.8 ---4.0 -100 100 -10 -100 0.2 -360 125 40 55 100 60 54 --nC ns µA Ω S pF V