2SK184BL中文资料

合集下载

2SK168中文资料

TO-92 (2) Conforms Conforms 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

2SK系列三极管

2SA系列三极管参数2SA1006B SI-P 250V 1.5A 25W 80MHz2SA1009 SI-P 350V 2A 15W |2SA1011 SI-P 160V 1.5A 25W 120MHz2SA1013 SI-P 160V 1A 0.9W 50MHz |2SA1015 SI-P 50V 0.15A 0.4W 80MHz2SA1016 SI-P 100V 0.05A 0.4W 110MHz |2SA1017 SI-P 120V 50mA 0.5W 110MHz2SA1018 SI-P 250V 70mA 0.75W >50MHz |2SA1020 SI-P 50V 2A 0.9W 100MHz2SA1027 SI-P 50V 0.2A 0.25W 100MHz |2SA1029 SI-P 30V 0.1A 0.2W 280MHz2SA1034 SI-P 35V 50mA 0.2W 200MHz |2SA1037 SI-P 50V 0.4A 140MHz FR2SA1048 SI-P 50V 0.15A 0.2W 80MHz |2SA1049 SI-P 120V 0.1A 0.2W 100MHz2SA1061 SI-P 100V 6A 70W 15MHz |2SA1062 SI-N 120V 7A 80W 15MHz2SA1065 SI-P 150V 10A 120W 50MHz |2SA1084 SI-P 90V 0.1A 0.4W 90MHz2SA1103 SI-P 100V 7A 70W 20MHz |2SA1106 SI-P 140V 10A 100W 20MHz2SA1110 SI-P 120V 0.5A 5W 250MHz |2SA1111 SI-P 150V 1A 20W 200MHz2SA1112 SI-P 180V 1A 20W 200MHz |2SA1115 SI-P 50V 0.2A 200MHz UNI2SA1120 SI-P 35V 5A 170MHz |2SA1123 SI-P 150V 50mA 0.75W 200MHz2SA1124 SI-P 150V 50mA 1W 200MHz |2SA1127 SI-P 60V 0.1A 0.4W 200MHz2SA1141 SI-P 115V 10A 100W 90MHz |2SA1142 SI-P 180V 0.1A 8W 180MHz2SA1145 SI-P 150V 50mA 0.8W 200MHz |2SA1150 SI-P 35V 0.8A 0.3W 120MHz2SA1156 SI-P 400V 0.5A 10W POWER |2SA1160 SI-P 20V 2A 0.9W 150MHz2SA1163 SI-P 120V 0.1A 100MHz |2SA1170 SI-P 200V 17A 200W 20MHz2SA1185 SI-P 50V 7A 60W 100MHz |2SA1186 SI-P 150V 10A 100W2SA1200 SI-P 150V 50mA 0.5W 120MHz |2SA1201 SI-P 120V 0.8A 0.5W 120MHz2SA1206 SI-P 15V 0.05A 0.6W |2SA1208 SI-P 180V 0.07A 0.9W |2SA1209 SI-P 180V 0.14A 10W2SA1210 SI-P 200V 0.14A 10W |2SA1213 SI-P 50V 2A 0.5W 120MHz2SA1215 SI-P 160V 15A 150W 50MHz | 2SA1216 SI-P 180V 17A 200W 40MHz2SA1220A SI-P 120V 1.2A 20W 160MHz | 2SA1221 SI-P 160V 0.5A 1W 45MHz2SA1225 SI-P 160V 1.5A 15W 100MHz | 2SA1227A SI-P 140V 12A 120W 60MHz2SA1232 SI-P 130V 10A 100W 60MHz | 2SA1241 SI-P 50V 2A 10W 100MHz2SA1242 SI-P 35V 5A 1W 170MHz |2SA1244 SI-P 60V 5A 20W 60MHz2SA1249 SI-P 180V 1.5A 10W 120MHz | 2SA1261 SI-P 100V 10A 60W POWER2SA1262 SI-P 60V 4A 30W 15MHz |2SA1264N SI-P 120V 8A 80W 30MHz2SA1265N SI-P 140V 10A 100W 30MHz | 2SA1266 SI-P 50V 0.15A 0.4W POWER2SA1268 SI-N 120V 0.1A 0.3W 100MHz | 2SA1270 SI-P 35V 0.5A 0.5W 200MHz2SA1271 SI-P 30V 0.8A 0.6W 120MHz | 2SA1275 SI-P 160V 1A 0.9W 20MHz2SA1282 SI-P 20V 2A 0.9W 80MHz |2SA1283 SI-P 60V 1A 0.9W 85MHz2SA1286 SI-P 30V 1.5A 0.9W 90MHz | 2SA1287 SI-P 50V 1A 0.9W 90MHz2SA1292 SI-P 80V 15A 70W 100MHz | 2SA1293 SI-P 100V 5A 30W 0.2us2SA1294 SI-P 230V 15A 130W |2SA1295 SI-P 230V 17A 200W 35MHz2SA1296 SI-P 20V 2A 0.75W 120MHz | 2SA1298 SI-P 30V 0.8A 0.2W 120MHz2SA1300 SI-P 10V 2A 0.75W 140MHz | 2SA1302 SI-P 200V 15A 150W 25MHz2SA1303 SI-P 150V 14A 125W 50MHz | 2SA1306 SI-P 160V 1.5A 20W2SA1306A SI-P 180V 1.5A 20W 100MHz | 2SA1307 SI-P 60V 5A 20W 0.1us2SA1309 SI-P 30V 0.1A 0.3W 80MHz | 2SA1310 SI-P 60V 0.1A 0.3W 200MHz2SA1315 SI-P 80V 2A 0.9W 0.2us |2SA1317 SI-P 60V 0.2A 0.3W 200MHz | 2SA1318 SI-P 60V 0.2A 0.5W 200MHz2SA1319 SI-P 180V 0.7A 0.7W 120MHz | 2SA1321 SI-P 250V 50mA 0.9W 100MHz2SA1328 SI-P 60V 12A 40W 0.3us |2SA1329 SI-P 80V 12A 40W 0.3us2SA1345 SI-N 50V 0.1A 0.3W 250MHz | 2SA1346 SI-P 50V 0.1A 200MHz2SA1348 SI-P 50V 0.1A 200MHz |2SA1349 P-ARRAY 80V 0.1A 0.4W 1702SA1352 SI-P 200V 0.1A 5W 70MHz | 2SA1357 SI-P 35V 5A 10W 170MHz2SA1358 SI-P 120V 1A 10W 120MHz | 2SA1359 SI-P 40V 3A 10W 100MHz2SA1360 SI-P 150V 50mA 5W 200MHz | 2SA1361 SI-P 250V 50mA 80MHz2SA1370 SI-P 200V 0.1A 1W 150MHz | 2SA1371E SI-P 300V 0.1A 1W 150MHz2SA1376 SI-P 200V 0.1A 0.75W 120MHz | 2SA1380 SI-P 200V 0.1A 1.2W2SA1381 SI-P 300V 0.1A 150MHz |2SA1382 SI-P 120V 2A 0.9W 0.2us2SA1383 SI-P 180V 0.1A 10W 180MHz | 2SA1386 SI-P 160V 15A 130W 40MHz2SA1387 SI-P 60V 5A 25W 80MHz | 2SA1392 SI-P 60V 0.2A 0.4W 200MHz2SA1396 SI-P 100V 10A 30W |2SA1399 SI-P 55V 0.4A 0.9W 150MHz2SA1400 SI-P 400V 0.5A 10W |2SA1403 SI-P 80V 0.5A 10W 800MHz2SA1405 SI-P 120V 0.3A 8W 500MHz | 2SA1406 SI-P 200V 0.1A 7W 400MHz2SA1407 SI-P 150V 0.1A 7W 400MHz | 2SA1413 SI-P 600V 1A 10W 26MHz2SA1428 SI-P 50V 2A 1W 100MHz | 2SA1431 SI-P 35V 5A 1W 170MHz2SA1441 SI-P 100V 5A 25W <300ns |2SA1443 SI-P 100V 10A 30W2SA1450 SI-P 100V 0.5A 0.6W 120MHz | 2SA1451 SI-P 60V 12A 30W 70MHz2SA1460 SI-P 60V 1A 1W <40NS |2SA1470 SI-P 80V 7A 25W 100MHz2SA1475 SI-P 120V 0.4A 15W 500MHz |2SA1477 SI-P 180V 0.14A 10W 150MHz |2SA1488 SI-P 60V 4A 25W 15MHz2SA1489 SI-P 80V 6A 60W 20MHz |2SA1490 SI-P 120V 8A 80W 20MHz2SA1491 SI-P 140V 10A 100W 20MHz |2SA1494 SI-P 200V 17A 200W 20MHz2SA1507 SI-P 180V 1.5A 10W 120MHz |2SA1515 SI-P 40V 1A 0.3W 150MHz2SA1516 SI-P 180V 12A 130W 25MHz |2SA1519 SI-P 50V 0.5A 0.3W 200MHz2SA1535A SI-P 180V 1A 40W 200MHz |2SA1538 SI-P 120V 0.2A 8W 400MHz2SA1539 SI-P 120V 0.3A 8W 400MHz |2SA1540 SI-P 200V 0.1A 7W 300MHz2SA1541 SI-P 200V 0.2A 7W 300MHz |2SA1553 SI-P 230V 15A 150W 25MHz2SA1566 SI-N 120V 0.1A 0.15W 130MHz |2SA1567 SI-P 50V 12A 35W 40MHz2SA1568 SI-P 60V 12A 40W | 2SA1577 SI-P 32V 0.5A 0.2W 200MHz2SA1593 SI-P 120V 2A 15W 120MHz |2SA1601 SI-P 60V 15A 45W2SA1606 SI-P 180V 1.5A 15W 100MHz | 2SA1615 SI-P 30V 10A 15W 180MHz 2SA1624 SI-P 300V 0.1A 0.5W 70MHz | 2SA1625 SI-P 400V 0.5A 0.75W2SA1626 SI-P 400V 2A 1W 0.5/2.7us |2SA1633 SI-P 150V 10A 100W 20MHz2SA1643 SI-P 50V 7A 25W 75MHz |2SA1667 SI-P 150V 2A 25W 20MHz2SA1668 SI-P 200V 2A 25W 20MHz |2SA1670 SI-P 80V 6A 60W 20MHz2SA1671 SI-P 120/120V 8A 75W 20MHz |2SA1672 SI-P 140V 10A 80W 20MHz2SA1673 SI-P 180V 15A 85W 20MHz |2SA1680 SI-P 60V 2A 0.9W 100/400ns2SA1684 SI-P 120V 1.5A 20W 150MHz |2SA1694 SI-P 120/120V 8A 80W 20MHz2SA1695 SI-P 140V 10A 80W 20MHz |2SA1703 SI-P 30V 1.5A 1W 180MHz2SA1706 SI-P 60V 2A 1W |2SA1708 SI-P 120V 1A 1W 120MHz2SA1726 SI-P 80V 6A 50W 20MHz |2SA1776 SI-P 400V 1A 1W2SA1803 SI-P 80V 6A 55W 30MHz |2SA1837 SI-P 230V 1A 20W 70MHz2SA1962 SI-P 230V 15A 130W 25MHz2SA329 GE-P 15V 10mA 0.05W |2SA467 SI-P 40V 0,4A 0,3W2SA473 SI-P 30V 3A 10W 100MHz | 2SA483 SI-P 150V 1A 20W 9MHz2SA493 SI-P 50V 0.05A 0.2W 80MHz | 2SA495 SI-P 35V 0.1A 0.2W 200MHz2SA562 SI-P 30V 0.5A 0.5W 200MHz | 2SA566 SI-P 100V 0.7A 10W 100MHz2SA608 SI-N 40V 0.1A 0.1W 180MHz | 2SA614 SI-P 80V 1A 15W 30MHz2SA620 SI-P 30V 0.05A 0.2W 120MHz | 2SA626 SI-P 80V 5A 60W 15MHz2SA628 SI-P 30V 0.1A 100MHz |2SA639 SI-P 180V 50mA 0,25W2SA642 SI-P 30V 0.2A 0.25W 200MHz | 2SA643 SI-P 40V 0.5A 0.5W 180MHz2SA653 SI-P 150V 1A 15W 5MHz | 2SA684 SI-P 60V 1A 1W 200MHz2SA699 SI-P 40V 2A 10W 150MHz | 2SA708A SI-P 100V 0.7A 0.8W 50MHz2SA720 SI-P 60V 0.5A 0.6W 200MHz | 2SA725 SI-P 35V 0.1A 0.15W 100MHz2SA733 SI-P 60V 0.15A 0.25W 50MHz | 2SA738 SI-P 25V 1.5A 8W 160MHz2SA747 SI-P 120V 10A 100W 15MHz | 2SA756 SI-P 100V 6A 50W 20MHz2SA762 SI-P 110V 2A 23W 80MHz | 2SA765 SI-P 80V 6A 40W 10MHz2SA768 SI-P 60V 4A 30W 10MHz | 2SA769 SI-P 80V 4A 30W 10MHz2SA770 SI-P 60V 6A 40W 10MHz | 2SA771 SI-P 80V 6A 40W 2MHz2SA777 SI-P 80V 0.5A 0.75W 120MHz | 2SA778A SI-P 180V 0.05A 0.2W 60MHz2SA781 SI-P 20V 0.2A 0.2W <80/16 |2SA794 SI-P 100V 0.5A 5W 120MHz2SA794A SI-P 120V 0.5A 5W 120MHz | 2SA812 SI-P 50V 0.1A 0.15W2SA814 SI-P 120V 1A 15W 30MHz | 2SA816 SI-P 80V 0.75A 1.5W 100MHz2SA817 SI-P 80V 0.3A 0.6W 100MHz | 2SA817A SI-P 80V 0.4A 0.8W 100MHz2SA838 SI-P 30V 30mA 0.25W 300MHz2SA839 SI-P 150V 1.5A 25W 6MHz |2SA841 SI-P 60V 0.05A 0.2W 140MHz2SA858 SI-P 150V 50mA 0.5W 100MHz |2SA872 SI-P 90V 0.05A 0.2W 120MHz2SA872A SI-P 120V 50mA 0.3W 120MHz |2SA884 SI-P 65V 0.2A 0.27W 140MHz2SA885 SI-P 45V 1A 5W 200MHz |2SA886 SI-P 50V 1.5A 1.2W2SA893 SI-P 90V 50mA 0.3W | 2SA900 SI-P 18V 1A 1.2W2SA914 SI-P 150V 0.05A 200MHz |2SA915 SI-P 120V 0.05A 0.8W 80MHz2SA916 SI-P 160V 0.05A 1W 80MHz |2SA921 SI-P 120V 20mA 0.25W 200MHz2SA933 SI-P 50V 0.1A 0.3W | 2SA934 SI-P 40V 0.7A 0.75W2SA935 SI-P 80V 0.7A 0.75W 150MHz |2SA937 SI-P 50V 0.1A 0.3W 140MHz2SA940 SI-P 150V 1.5A 25W 4MHz |2SA941 SI-P 120V 0.05A 0.3W 150MHz2SA949 SI-P 150V 50mA 0.8W 120MHz |2SA965 SI-P 120V 0.8A 0.9W 120MHz2SA966 SI-P 30V 1.5A 0.9W 120MHz |2SA968 SI-P 160V 1.5A 25W 100MHz2SA970 SI-P 120V 0.1A 100MHz |2SA982 SI-P 140V 8A 80W 20MHz2SA984 SI-P 60V 0.5A 0.5W 120MHz |2SA985 SI-P 120V 1.5A 25W 180MHz2SA988 SI-P 120V 0.05A 0.5W |2SA991 SI-P 60V 0.1A 0.5W 90MHz2SA992 SI-P 100V 0.05A 0.2W |2SA995 SI-P 100V 0.05A 0.4W 100MHz2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K 2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K 2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 202SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K 2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K 2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=4 2SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz 2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/22002SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA 0.75W >80MHz 2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz 2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz 2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz 2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>200 2SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz 2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A 0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz 2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2243日本富士通公司Si-NPN 450V 5A<1MHZ 或者未知工作频率BU326 BU526 BU626ABUW71 BUX44 BUX45 TIP57A TIP58A 3DK308B2SC2244日本富士通公司Si-NPN450V8A<1MHZ 或者未知工作频率BU526 BU626A BUW72 BUX15 BUX44 TIP57A TIP58A 3DK308B2SC2245日本富士通公司Si-NPN450V10A<1MHZ 或者未知工作频率BU526 BU626A BUW24 BUX25 BUW26 BUW34 BUW35 BUW36 BUW72 3DK308B BU415 BU626A BUV25 BUW44 BUX25 2SD396 2SD641 3DK308B BUT56(A)BUX64 MJE53T2SC1865 2SC22002SC2248日本富士通公司Si-NPN450V8A<1MHZ或者未知工作频率BUT56(A)BUX64BUY65MJE130063DK306B 2SC2249日本富士通公司Si-NPN250V30A<1MHZ或者未知工作频率2SC13012SC18732SC22042SC22202SC24422SC24452SD6433DK210E 2SC225日本富士通公司Si-NPN80V1A150MHZBD139BD169BD179BD237BD4412SC1253DK30C2SC2250日本富士通公司Si-NPN450V30A<1MHZ或者未知工作频率2SC13002SC14702SC18742SC22042SC22202SC24423DK210F 2SC2251日本富士通公司Si-NPN45V0.5A900MHZBLX973DA392SC2253日本富士通公司Si-NPN45V2A900MHZ3DA23B2SC2254日本富士通公司Si-NPN45V4A900MHZ3DA100B 2SC2255日本富士通公司Si-NPN45V6A900MHZ2SC20443DA6B2SC2256日本三肯公司Si-NPN200V15A10MHZBDW16BUX11BUX412SC2019 2SD552 2SD583 3DK209D2SC2257未知生产厂家Si-NPN180V0.05A80MHZBF415BF458BF459BF469BF4712SC2257A日本松下公司Si-NPN220V0.05A80MHZBF415BF458BF459BF469BF4713DA87CBF415BF417BF458BF459BF460BF469BF7572SC34173DA87C3DA151DBF417BF459BF8502SC34172SC34182SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz 2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz 2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W 160MHz 2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz 2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz 2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz 2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3A PQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W 15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz 2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>10。

2SK4108资料

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)2SK4108Switching Regulator Applicationsz Low drain −source ON resistance : R DS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Y fs | = 14 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 500 V) z Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristic Symbol Rating UnitDrain −source voltageV DSS 500 VDrain −gate voltage (R GS = 20 k Ω) V DGR 500 VGate −source voltage V GSS ±30 V DC (Note 1) I D 20 A Drain currentPulse (Note 1)I DP 80A Drain power dissipation (Tc = 25°C) P D 150 WSingle-pulse avalanche energy(Note 2) E AS 960 mJ Avalanche currentI AR 20 ARepetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature,etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristic Symbol Max UnitThermal resistance, channel to case R th (ch −c) 0.833 °C / W Thermal resistance, channel toambientR th (ch −a)50°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 4.08 mH, R G = 25 Ω, I AR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.Unit: mm1. GATE2. DRAIN (HEAT SINK)3. SOURCEJEDEC ― JEITA―TOSHIBA 2-16C1B Weight: 4.6 g (typ.)Electrical Characteristics (Ta = 25°C)Source −Drain Ratings and Characteristics (Ta = 25°C)Characteristic SymbolTest ConditionMinTyp.MaxUnitContinuous drain reverse current(Note 1)I DR —— — 20 A Pulse drain reverse current(Note 1) I DRP —— — 80 A Forward voltage (diode) V DSF I DR = 20 A, V GS = 0 V ——−1.7VReverse recovery time t rr — 1300 — ns Reverse recovery chargeQ rrI DR = 20 A, V GS = 0 VdI DR / dt = 100 A / μs— 20 — μCMarkinglead (Pb)-free package or lead (Pb)-free finish.610 5.5Common source Tc = 25°C Pulse TestI D – V DSI D – V DSI D – V GSV DS – V GS|Y fs | – I DR DS (ON) – I DDrain-source voltage V DS (V)D r a i n c u r r e n t I D (A )Drain-source voltage V DS (V)D r a i n c u r r e n t I D (A )Gate-source voltage V GS (V)D r a i n c u r r e n t I D (A )Gate-source voltage V GS (V)Drain current I D (A) Drain current I D (A)D r a i n -s o u r c e O N r e s i s t a n c e R D S (O N ) (Ω)D r a i n -s o u r c e v o l t a g e V D S (V )F o r w a r d t r a n s f e r a d m i t t a n c e ⎪Y f s ⎪ (S )1086Common sourceTc = 25°C Pulse TestV th − TcR DS (ON) − TcI DR − V DSP D − TcCase temperature Tc (°C)G a t e t h r e s h o l d v o l t a g e V t h (V )Case temperature Tc (°C)Total gate charge Q g (nC)C a p a c i t a n c e C (p F )Capacitance – V DSDrain-source voltage V DS (V)D r a i n -s o u r c e O N r e s i s t a n c e R D S (O N ) (Ω)Case temperature Tc (°C)D r a i n r e v e r s e c u r r e n t I D R (A )Drain-source voltage V DS (V)D r a i n p o w e r d i s s i p a t i o n P D (W )D r a i n -s o u r c e v o l t a g e V D S (V )Dynamic input / outputcharacteristics120−15 15 Test circuitWave formB R G = 25 ΩV DD = 90 V, L = 4.08 mH⎟⎟⎠⎞⎜⎜⎝⎛−⋅⋅⋅=V DD B VDSSB VDSS 2I L 21ΕASE AS– T chSAFE OPERATING AREADrain-source voltage V DS (V)D r a in c u r r e n t I D (A )Channel temperature (initial) T ch (°C)A v a l a n c h e e n e r g y E A S (m J )RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SK系列场管参数

型号电压电流功率2SK1000N沟22V50mA250mW低频放场效应管2SK1001N沟22V50mA200mW低频放场效应管2SK1006N沟450V5A40W2SK1007N沟450V5A60W2SK1008N沟500V 4.5A60W2SK1009N沟450V7A80W2SK1010N沟500V6A80W2SK1011N沟450V10A100W2SK1012拆2SK1012N沟500V10A100W2SK1013N沟450V13A125W2SK1014N沟500V12A125W2SK1015N沟450V18A125W2SK1016N沟500V15A125W2SK1017N沟450V20A150W2SK1017拆N沟450V20A150W2SK1019N沟450V35A300W2SK1019拆N沟450V35A300W2SK1020N沟500V30A300W2SK1021N沟800V3A60W2SK1022N沟900V 2.5A60W2SK1023N沟800V4A60W2SK1024N沟900V 3.5A60W2SK1025N沟50V20A45W2SK1026N沟250V20A150W2SK1027N沟300V20A150W2SK1028N沟400V5A50W场效应开关管2SK1029N沟500V10A200W2SK1030AN沟900V3A50W2SK1030N沟800V3A50W2SK1031N沟50V10mA100mW低频放场效应管2SK1032AN沟900V8A120W2SK1032N沟800V8A120W2SK1033N沟60V15A45W2SK1034N沟100V15A45W2SK1035N沟150V12A45W2SK1036N沟250V10A50W2SK1037N沟250V50W场效应开关管2SK1038N沟400V5A50W2SK1039N沟400V8A50W2SK103-K2N沟20V0.02-0.040.08W场效应音频/高频放大管2SK103-L1N沟20V0.35-0.070.08W场效应音频/高频放大管2SK103-L2N沟20V0.06-0.120.08W场效应音频/高频放大管2SK103-M1N沟20V0.1-0.2mA0.08W场效应音频/高频放大管2SK103-M2N沟20V0.15-0.3m0.08W场效应音频/高频放大管2SK103-N1N沟20V0.27-0.540.08W场效应音频/高频放大管2SK103-N2N沟20V0.5-1mA0.08W场效应音频/高频放大管2SK103N沟20V10mA80mW通用型场效应管2SK1040N沟400V10A100W2SK1041N沟400V15A120W2SK1042N沟400V20A130W2SK1043N沟4V10mA200mW2SK1044N沟800V5A150W2SK1045N沟900V5A150W2SK1046N沟4V10mA200mW2SK1047N沟250V20A150W2SK1048N沟300V20A150W2SK1049N沟450V15A150W2SK104-EN沟30V0.5-1.5mA0.25W场效应音频/高频放大管2SK104-FN沟30V1-3mA0.25W场效应音频/高频放大管2SK104-HN沟30V2-6mA0.25W场效应音频/高频放大管2SK104-JN沟30V4-12mA0.25W场效应音频/高频放大管2SK104N沟30V10mA250mW低频放大场效应管2SK1050N沟500V15A150W2SK1051N沟50V40A120W2SK1052N沟450V0.5A30W2SK1053N沟450V1A40W2SK1056N沟120V7A100W2SK1057N沟140V7A100W2SK1058N沟160V7A100W2SK1059N沟60V5A20W场效应高频放大管2SK1059-ZN沟60V5A20W2SK105N沟50V10mA250mW低频放大场效应管2SK1060N沟100V5A20W2SK1060-ZN沟100V5A20W2SK1061N沟60V200mA300mW2SK1062N沟60V200mA300mW14/75ns2SK1063N沟450V15A125W2SK1064N沟500V15A125W2SK1065N沟20V10mA150mW2SK1066N沟15V10mA150mW场效应高频功率放大管2SK1067N沟16V30mA150mW2SK1068N沟40V10mA100mW通用型场效应管2SK1069N沟40V10mA150mW低频放大场效应管2SK106-AN沟50V0.5-1.5mA0.3W场效应音频(低频)管2SK106-BN沟50V1-3mA0.3W场效应音频(低频)管2SK106-CN沟50V2-6mA0.3W场效应音频(低频)管2SK106-DN沟50V4-12mA0.3W场效应音频(低频)管2SK106N沟10mA300mW低频放大场效应管2SK1070N沟22V50mA150mW低频放大场效应管2SK107-2N沟27V 2.7-5.5mA0.25W2SK1073N沟800V3A45W2SK107-3N沟27V 4.5-7.7mA0.25W2SK107-4N沟27V 6.3-9.9mA0.25W2SK107-5N沟27V8.1-12.1m0.25W2SK1078N沟60V0.8A500mW2SK1079N沟100V0.6A500mW2SK107N沟27V10mA250mW直接耦合放大/直流/甚高频场效应2SK1081N沟800V7A125W2SK1081拆N沟800V7A125W2SK1082拆N沟900V6A2SK1082N沟900V6A125W2SK1083N沟60V8A20W2SK1084N沟100V5A20W2SK1085N沟150V3A20W2SK1086N沟60V20A35W2SK1087N沟100V12A35W2SK1088N沟150V9A35W2SK1089N沟60V35A80W2SK108N沟50V10mA300mW2SK1090N沟100V20A80W2SK1091N沟150V15A80W2SK1092N沟4V150mA0.15W2SK1093N沟60V10A20W2SK1094N沟60V15A25W2SK1095N沟60V25A30W2SK1096N沟60V13A30W2SK1097N沟100V8A30W2SK1098N沟150V6A30W电机控制场效应管2SK109AN沟50V1-12mA0.3W2SK109N沟50V10mA150mW2SK1100N沟3V60mA200mW2SK1101N沟450V10A50W2SK1102N沟500V10A50W2SK1103N沟50V10mA200mW2SK1104N沟50V10mA300mW2SK1105N沟800V3A80W2SK1108N沟20V0.04-0.6m0.1W场效应前置/输入级管2SK1109N沟20V10mA80mW通用型场效应管2SK110N沟30V10mA900mW2SK1112N沟60V5A20W2SK1113N沟120V3A20W2SK1114N沟60V12A40W2SK1115N沟60V20A60W2SK1116N沟100V25A100W2SK1117拆N沟600V6A2SK1117N沟600V6A100W2SK1118拆N沟600V6A2SK1118N沟600V6A45W2SK111N沟30V10mA200mW 2SK1120N沟1000V8A150W 2SK1121N沟50V25A45W 2SK1122N沟100V40A100W 2SK1123N沟60V40A100W 2SK1124N沟60V45A125W 2SK112N沟50V10mA250mW 2SK112-ON沟50V3-9mA0.25W 2SK112-RN沟50V 1.2-3.6mA0.25W 2SK1132N沟50V0.02A0.25W 2SK1133N沟50V0.02A0.2W 2SK1134N沟50V45A80W 2SK1135N沟250V15A100W 2SK1136N沟50V10A30W 2SK1137N沟50V16A40W 2SK1138N沟150V7A30W 2SK1139N沟150V13A40W 2SK113N沟50V10mA250mW 2SK113-ON沟50V25-75mA0.25W 2SK113-RN沟50V5-30mA0.25W 2SK113-YN沟50V50-150mA0.25W 2SK1142N沟800V2A35W 2SK1143N沟900V2A35W 2SK1149N沟100V20A75W 2SK1150N沟60V40A75W 2SK1151LN沟450V 1.5A20W 2SK1151N沟450V 1.5A10W 2SK1151SN沟450V 1.5A20W 2SK1152LN沟500V 1.5A20W 2SK1152N沟500V 1.5A10W 2SK1152SN沟500V 1.5A20W 2SK1153N沟450V3A30W 2SK1154N沟500V3A30W 2SK1155N沟450V3A50W 2SK1156N沟500V3A50W 2SK1157N沟450V7A60W 2SK1158N沟500V7A60W 2SK1159N沟450V8A60W 2SK1160N沟500V8A60W 2SK1161N沟450V10A100W 2SK1162N沟500V10A100W 2SK1163N沟450V11A100W 2SK1164N沟500V11A100W 2SK1165N沟450V12A100W 2SK1166N沟500V12A100W 2SK1167N沟450V15A100W2SK1169N沟450V20A147/290ns2SK117拆N沟50V10mA2SK1170N沟500V20A120W2SK1171N沟800V4A80W2SK1172N沟900V 3.5A80W2SK1173N沟50V500mA200mW通用型场效应管2SK1177N沟500V 2.5A30W金属氧化物场效应功率放大管2SK1178N沟500V4A35W金属氧化物场效应功率放大管2SK1179N沟500V8.5A85W金属氧化物场效应功率放大管2SK117-BLN沟50V6-14mA0.3W2SK117-GRN沟50V 2.6-6.5mA0.3W2SK117N沟50V10mA300mW2SK117-ON沟50V0.6-1.4mA0.3W2SK117-YN沟50V 1.2-3mA0.3W2SK1180N沟500V10A85W金属氧化物场效应功率放大管2SK1181N沟500V13A85W金属氧化物场效应功率放大管2SK1183N沟200V3A25W金属氧化物场效应功率放大管2SK1184N沟200V5A30W金属氧化物场效应功率放大管2SK1185N沟100V5A25W金属氧化物场效应功率放大管2SK1186N沟100V9A30W金属氧化物场效应功率放大管2SK1187N沟100V12A35W金属氧化物场效应功率放大管2SK1188N沟60V10A25W金属氧化物场效应功率放大管2SK1189N沟60V15A30W金属氧化物场效应功率放大管2SK118N沟50V10mA100mW2SK118-ON沟50V0.6-1.4mA Nf=0.5dB场效应音频(低频)管2SK118-RN沟50V0.3-0.75m Nf=0.5dB场效应音频(低频)管2SK1190N沟60V22A35W金属氧化物场效应功率放大管2SK1191N沟60V30A40W金属氧化物场效应功率放大管2SK1192N沟60V40A90W金属氧化物场效应功率放大管2SK1194N沟230V0.5A6W2SK1195N沟230V15A10W2SK1196N沟5V20-70mA0.2W2SK1197N沟70V0.3A通用型场效应管2SK1198拆N沟700V2A2SK1198N沟700V2A35W2SK1199N沟900V2A70/125ns2SK119N沟30V10mA250mW直接耦合放大/直流场效应管2SK11N沟20V10mA100mW直接耦合放大/直流场效应管2SK11-ON沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK11-RN沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK11-YN沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK1200N沟900V3A80W2SK1201N沟900V4A80W2SK120-1N沟15V1-3mA0.2W2SK1202N沟900V5A100W2SK120-2N沟15V2-5mA0.2W2SK1204N沟900V8A100W2SK1205N沟1000V5A100W2SK1206N沟500V12A60W2SK120N沟15V10mA200mW2SK1211N沟800V 2.5A40W2SK121-1N沟30V0.9-3.3mA0.3W2SK1212N沟900V5A80W2SK121-2N沟30V 2.7-5.5mA0.3W2SK1213N沟600V6A125W2SK121-3N沟30V 4.5-9.9mA0.3W2SK1214N沟80V20A45W2SK121-4N沟30V 4.5-9.9mA0.3W2SK1215N沟20V30mA0.1W2SK121-5N沟30V8.1-14.3m0.3W2SK1216N沟10V50mA0.2W2SK121-6N沟30V8.1-14.3m0.3W2SK1217N沟900V8A100W2SK121N沟30V5mA300mW2SK1221N沟250V10A80W2SK1222N沟450V15A125W2SK1223N沟60V5A130W2SK1224N沟800V4A50W2SK1225N沟450V12A60W2SK1227N沟150V10mA100mW通用型场效应管2SK1228N沟50V50mA150mW2SK1229N沟4V60mA0.16W2SK122N沟15V30mA250mW2SK1230N沟120V10A25W2SK1231N沟450V5A30W2SK1232N沟500V5A30W2SK1233N沟6V20-90mA0.3W2SK1234N沟5V20-80mA0.27W2SK1235N沟6V20-90mA0.3W2SK1236N沟6V20-90mA0.3W2SK1237N沟5V20-80mA0.27W2SK1238N沟5V20-60mA0.27W2SK1239N沟5V20-60mA0.27W2SK123N沟20V 2.2mA200mW通用型场效应管2SK1240N沟4V10-60mA0.18W2SK1241N沟4V10-60mA0.18W2SK1242N沟4V10-60mA0.18W2SK1243N沟4V10-60mA0.18W2SK1244N沟500V3A40W2SK1245N沟500V3A25W2SK1246N沟500V5A50W2SK1247N沟500V5A30W2SK1249N沟500V15A100W2SK124N沟80V100mA0.5W2SK1250N沟500V20A100W2SK1251N沟60V5A30W2SK1252N沟120V3A10W2SK1253N沟30V30A35W2SK1254LN沟120V3A20W2SK1254N沟120V3A20W2SK1254SN沟120V3A20W2SK1255N沟60V5A30W2SK1256N沟60V10A40W2SK1257N沟60V40A45W2SK1258N沟60V50A100W2SK1259N沟60V100A150W2SK125N沟35V10mA300mW2SK1260N沟100V5A30W2SK1261N沟100V8A40W2SK1262N沟100V30A45W2SK1263N沟100V40A100W2SK1264N沟150V3A30W2SK1265N沟100V6A40W2SK1266N沟100V20A45W2SK1267N沟100V25A100W2SK1268N沟450V15A60W2SK1269N沟500V15A60W2SK1270N沟60V2A10W2SK1271N沟1400V3A150W2SK1272N沟60V0.5A0.75W2SK1273N沟60V0.5A2W2SK1274N沟60V0.5A1W2SK1275N沟900V2A30W2SK1276N沟250V20A100W2SK1277N沟250V30A150W2SK1278N沟500V10A100W2SK1279N沟500V15A125W2SK127AN沟80V0.5-12mA0.25W场效应音频(低频)管2SK127N沟50V20mA250mW低频放大场效应管2SK1280N沟500V18A150W2SK1281N沟700V2A120W2SK1282N沟60V2A20W2SK1283N沟60V2A20W2SK1284N沟100V2A20W2SK1285N沟100V2A20W2SK1286N沟60V8A35W2SK1287N沟60V8A60W2SK1288N沟100V8A35W2SK128N沟30V10mA250mW2SK1290N沟60V15A35W2SK1291N沟60V15A60W2SK1292N沟100V15A35W2SK1293N沟100V15A60W2SK1294N沟60V20A35W2SK1295N沟60V20A35W2SK1296N沟60V30A75W2SK1297N沟60V40A100W2SK1298N沟60V40A50W2SK1299LN沟100V3A20W2SK1299N沟100V3A20W2SK1299SN沟100V3A20W2SK12-GRN沟20V 2.5-5mA0.1W2SK12NN沟20V0.45-5mA0.1W2SK12N沟20V10mA100mW2SK12-ON沟20V0.8-1.6mA0.1W2SK12-PN沟20V5mA0.1W2SK12-RN沟20V0.45-0.9m0.1W2SK12-YN沟20V 1.4--2.8m0.1W2SK1300N沟100V10A40W2SK1301N沟100V15A50W2SK1302N沟100V20A50W2SK1303N沟100V30A100W2SK1304N沟100V40A100W2SK1305N沟100V10A25W2SK1306N沟100V15A30W2SK1307N沟100V20A35W2SK1308AN沟450V5A40W2SK1308N沟400V5A40W2SK130AN沟30mA250mW场效应低噪声放大管2SK130N沟30V10mA250mW低频放大场效应管2SK1311N沟60V2A 3.5W2SK1313LN沟450V5A50W2SK1313N沟450V5A50W2SK1313SN沟450V5A50W2SK1314LN沟500V5A50W2SK1314N沟500V5A50W2SK1314SN沟500V5A50W2SK1315LN沟450V8A60W2SK1315N沟450V8A60W2SK1315SN沟450V8A60W2SK1316LN沟500V8A60W2SK1316N沟500V8A60W2SK1316SN沟500V8A60W2SK1317N沟1500V 2.5A100W2SK1319N沟250V8A75W2SK1319SN沟250V8A75W2SK131N沟30V10mA250mW2SK1320N沟300V8A75W2SK1320SN沟300V8A75W2SK1321N沟450V5A75W2SK1321SN沟450V5A75W2SK1322N沟500V5A75W2SK1322SN沟500V5A75W2SK1323N沟800V2A75W2SK1323SN沟800V2A75W2SK1324N沟900V2A75W2SK1324SN沟900V2A75W2SK1325N沟6V40-120mA0.2W2SK1326N沟10V20mA通用型场效应管2SK1327LN沟600V1A20W2SK1327N沟600V1A20W2SK1327SN沟600V1A20W2SK1328N沟450V12A60W2SK1329N沟500V12A60W2SK132N沟100V7A100W低频放大场效应管2SK1330AN沟900V8A100W2SK1330N沟800V8A100W2SK1331N沟500V15A100W2SK1332N沟30V20mA150mW低频放大场效应管2SK1333N沟500V15A200W2SK1334N沟200V1A1W2SK1335LN沟200V3A20W2SK1335N沟200V3A20W2SK1335SN沟200V3A20W2SK1336N沟60V0.3A0.4W2SK1337N沟100V0.3A0.4W2SK1338N沟800V2A50W2SK1339N沟900V3A80W2SK133N沟120V7A100W低频放大场效应管2SK1340N沟900V5A100W2SK1341N沟900V7A100W2SK1342N沟900V8A100W2SK1344N沟60V12A30W2SK1345N沟60V20A40W2SK1346拆N沟60V25A2SK1346N沟60V25A40W2SK1347N沟100V20A75W2SK1348N沟100V20A40W2SK1349N沟100V20A45W2SK134HN沟140V7A100WMOS场效应音频/功率放大管2SK134N沟140V7A100W低频放大场效应管2SK1350N沟200V15A45W2SK1351N沟500V5A40W2SK1352N沟500V7A45W2SK1356N沟900V3A40W2SK1357N沟900V5A125W2SK1358N沟900V9A150W2SK1358拆N沟900V9A150W2SK1359N沟1000V5A125W2SK135N沟7A100W低频放大场效应管2SK1362N沟900V5A80W金属氧化物场效应开关管2SK1363N沟900V8A90W金属氧化物场效应开关管2SK1365N沟1000V7A90W金属氧化物场效应开关管2SK1366N沟400V2A30W金属氧化物场效应功率放大管2SK1367N沟400V3A30W金属氧化物场效应功率放大管2SK1368N沟400V5A30W金属氧化物场效应功率放大管2SK1369N沟400V10A85W金属氧化物场效应功率放大管2SK136N沟30V10mA250mW2SK1370N沟400V15A85W金属氧化物场效应功率放大管2SK1371N沟450V20A125W2SK1372N沟500V20A125W2SK1373N沟550V12A100W2SK1374N沟50V50mA0.15W2SK1375N沟20V0.14-0.5mA场效应前置/输入级管2SK1377N沟400V 5.5A40W2SK1378N沟400V10A125W2SK1379N沟60V50A150W2SK137AN沟15V40mA0.1W场效应音频(低频)管2SK137N沟15V50mA100mW低频放大场效应管2SK1380N沟60V60A200W2SK1381N沟100V60A150W2SK1382N沟100V60A200W2SK1383N沟200V3A8W2SK1384N沟800V5A80W2SK1385N沟800V9A100W2SK1386N沟450V7A100W2SK1387N沟60V35A40W2SK1388N沟30V35A60W2SK1389N沟60V50A125W2SK138N沟100mA300mW高频振荡场效应管2SK1390N沟60V50A80W2SK1391N沟250V6A40W2SK1392N沟250V6A25W2SK1393N沟250V10A50W2SK1394N沟250V10A30W2SK1395N沟250V20A100W2SK1396N沟250V30A120W2SK1398N沟50V0.1A0.25W2SK1399N沟50V0.1A0.2W2SK139N沟15V150W无线电视甚高频场效应管2SK13-GRN沟12V 2.5-5mA0.1W2SK13N沟12V10mA100mW2SK13-ON沟12V0.8-1.6mA0.1W2SK13-RN沟12V0.45-5mA0.1W2SK13-YN沟12V 1.4-2.8mA0.1W2SK1400AN沟350V7A50W2SK1400N沟300V7A50W2SK1401AN沟350V15A100W2SK1401N沟300V15A100W2SK1402AN沟650V4A50W2SK1402N沟600V4A50W2SK1403AN沟650V8A100W2SK1403N沟600V8A100W2SK1404N沟600V5A35W2SK1405N沟600V15A60W2SK1406N沟500V20A100W2SK1407N沟4V12-60mA0.2W2SK1408N沟450V16A200W2SK1409N沟450V20A250W2SK140N沟5V100mA300mW2SK1410拆N沟500V16A2SK1411N沟500V20A250W2SK1412N沟1500V0.1A20W2SK1413N沟1500V2A60W2SK1414N沟1500V6A200W2SK14153.5V12-60mA0.16W12GHz场效应微波/高频放大管2SK1416N沟60V15A40W2SK1417N沟60V25A60W2SK1418N沟60V40A70W2SK1419N沟60V15A25W2SK141AN沟30V0.5-12mA0.25W2SK141N沟30V10mA250mW直接耦合放大/直流场效应管2SK1420N沟60V25A30W2SK1421N沟60V40A40W2SK1422N沟60V50A100W2SK1423N沟60V80A150W2SK1424N沟60V40A60W2SK1425N沟60V60A80W2SK1426N沟60V100A200W2SK1427N沟100V10A40W2SK1428N沟100V20A60W2SK1429N沟100V30A70W2SK1430N沟100V10A25W2SK1432N沟100V25A40W2SK1433N沟100V30A100W2SK1434N沟100V60A150W2SK1435N沟100V30A60W2SK1436N沟100V50A80W2SK1437N沟100V70A200W2SK1438N沟450V0.3A20W2SK1439N沟450V3A50W2SK1440N沟450V5A60W2SK1441N沟450V8A70W2SK1442N沟450V12A70W2SK1443N沟450V1A20W2SK1444N沟450V3A25W2SK1445LSN沟450V5A30W金属氧化物场效应功率放大管2SK1445N沟450V5A30W2SK1446N沟450V7A35W2SK1447N沟450V9A40W2SK1448N沟450V8A100W2SK1449N沟450V12A120W2SK1450N沟450V20A150W2SK1451N沟450V8A50W2SK1452N沟450V10A60W2SK1453N沟450V16A70W2SK1454N沟450V30A250W2SK1455N沟900V0.2A30W2SK1456N沟900V3A60W2SK1457N沟900V5A70W2SK1458N沟900V0.2A20W2SK1459N沟900V 2.5A30W2SK1460LSN沟900V 3.5A40W金属氧化物超高压场效应管2SK1460N沟900V 3.5A40W2SK1461N沟900V5A120W2SK1462N沟900V8A150W2SK1463N沟900V 4.5A60W2SK1464N沟900V8A80W2SK1465N沟900V8A200W2SK1466拆2SK1466N沟900V16A250W2SK1467N沟30V2A 3.5W2SK1468N沟30V4A20W2SK1469N沟30V8A30W2SK146-BLN沟40V8-16mA 1.2W2SK146-GRN沟40V5-10mA 1.2W2SK146N沟40V10mA600mW2SK146-VN沟40V14-30mA1.2W2SK1470N沟60V2A 3.5W2SK1472N沟60V8A30W2SK1473N沟100V2A 3.5W2SK1474N沟100V4A20W2SK1475N沟100V8A30W2SK1476N沟450V12A150W2SK1477N沟500V12A150W2SK1478N沟250V8A40W2SK1479N沟25V5mA0.1W通用型场效应管2SK147-BLN沟40V8-16mA0.6W2SK147-GRN沟40V5-10mA0.6W2SK147N沟40V10mA600mW2SK147-VN沟40V14-30mA0.6W2SK1480N沟20V30mA0.2W2SK1482N沟30V0.5A0.75W2SK1483N沟30V0.5A2W2SK1484N沟100V0.5A0.75W2SK1485N沟100V0.5A2W2SK1486N沟300V32A200W2SK1487N沟450V10A125W2SK1488N沟500V10A125W2SK1489N沟1000V12A200W2SK148N沟25V10mA100mW2SK1491N沟250V13A120W2SK1492拆N沟250V18A2SK1492N沟250V18A140W2SK1493N沟450V2A50W2SK1493-ZN沟450V3A50W2SK1494N沟500V2A50W2SK1494-ZN沟500V3A50W2SK1495N沟450V4A50W2SK1495-ZN沟450V7A70W2SK1496N沟450V4A50W2SK1496-ZN沟500V7A70W2SK1497N沟450V10A130W2SK1498N沟500V10A130W2SK1499N沟450V13A160W2SK149N沟20V10mA350mW2SK1500拆2SK1500N沟500V13A160W2SK1501N沟900V2A70W2SK1501-ZN沟900V4A70W2SK1502N沟900V4A120W2SK1503N沟500V10A80W2SK1504-LSN沟500V10A80W场效应开关管2SK1505N沟30V35A40W2SK1506N沟120V50A150W电机控制场效应管2SK1507拆2SK1507N沟600V9A50W场效应开关管2SK1508N沟60V35A60W电机控制场效应管2SK1509N沟100V20A60W电机控制场效应管2SK150-BLN沟50V6-14mA0.4W2SK150-GRN沟50V 2.6-6.5mA0.4W2SK150N沟50V10mA200mW2SK150-YN沟50V1-3mA0.4W2SK1510-LSN沟900V 3.5A60W场效应开关管2SK15122SK1513N沟500V8A150W2SK1514N沟60V40A125W2SK1515N沟450V10A100W2SK1516N沟500V10A100W2SK1517N沟450V20A120W2SK1518N沟500V20A165/345ns2SK1519N沟450V30A200W2SK151N沟40V10mA800mW2SK1520N沟500V30A200W2SK1521N沟450V50A250W2SK1522N沟500V50A250W2SK1526N沟450V40A250W2SK1527N沟500V40A250W2SK1528LN沟900V4A60W2SK1528N沟900V4A60W2SK1528SN沟900V4A60W2SK1529N沟500V4A120W通用型场效应管2SK152N沟15V5mA300mW2SK1530N沟200V12A150W通用型场效应管2SK1531N沟500V15A150W2SK1532N沟50V10mA0.1W通用型场效应管2SK1534N沟900V3A50W2SK1535N沟900V3A30W通用型场效应管2SK1536N沟900V3A70W2SK1537N沟900V5A100W2SK1538N沟900V7A130W2SK1539N沟900V10A150W2SK1539拆N沟900V10A150W通用型场效应管2SK1540LN沟450V7A60W2SK1540N沟450V7A60W2SK1540SN沟450V7A60W2SK1541LN沟500V7A60W2SK1541N沟500V7A60W2SK1541SN沟500V7A60W2SK1542N沟60V45A125W2SK1544N沟500V25A200W2SK1547N沟800V4A40W场效应开关管2SK1548N沟900V 3.5A40W场效应开关管2SK1549N沟250V20A80W场效应开关管2SK154N沟20V10mA350mW2SK1552-LSN沟800V4A60W场效应开关管2SK1555N沟50V16A75W2SK1555SN沟50V16A75W2SK1556N沟100V8A30W2SK1557N沟100V8A45W2SK1558N沟100V15A40W2SK1559N沟100V16A75W2SK1559SN沟100V16A75W2SK155N沟20V30mA400mW低频放大场效应管2SK1560N沟150V7A45W2SK1561N沟150V16A75W2SK1561SN沟150V16A75W2SK1562N沟400V12A150W2SK1562SN沟400V12A150W2SK1563N沟500V12A150W2SK1563SN沟500V12A150W2SK1564N沟800V3A150W2SK1564SN沟800V3A150W2SK1565N沟900V3A150W2SK1566N沟450V7A35W2SK1567N沟500V7A35W2SK1568N沟250V8A40W2SK1569N沟300V8A40W2SK156JN沟20V0.06mA0.1W场效应电容话筒专用管2SK156KN沟20V0.15mA0.1W场效应电容话筒专用管2SK156LN沟20V0.25mA0.1W场效应电容话筒专用管2SK156MN沟20V0.4mA0.1W场效应电容话筒专用管2SK156N沟20V10mA100mW通用型场效应管2SK1570N沟450V12A90/140ns2SK1571N沟500V12A90/140ns2SK1572N沟600V3A25W2SK1573N沟600V15A125W2SK1574N沟500V8A125W2SK1575N沟180V16A通用型场效应管2SK1576N沟30V3～16mA0.15W场效应低噪声放大管2SK1577N沟30A～80mA超高频场效应管2SK1578N沟20V1mA0.1W低频放大场效应管2SK1579N沟12V2A1W2SK157N沟50V10mA150mW低频放大场效应管2SK1580N沟16V0.01A0.15W2SK1581N沟16V0.01A0.2W2SK1582N沟30V0.01A0.2W2SK1583N沟16V0.3A2W2SK1584N沟30V0.3A2W2SK1585N沟16V0.5A2W2SK1586N沟30V0.5A2W2SK1587N沟16V1A2W2SK1588N沟16V1A2W2SK1589N沟100V0.01A0.2W2SK158N沟55V10mA70mW低频放大场效应管2SK1590N沟60V0.01A0.2W2SK1591N沟100V0.01A0.2W2SK1592N沟60V0.5A0.2W2SK1593N沟100V0.5A0.2W2SK1594N沟30V10A30W2SK1595N沟30V15A35W2SK1596N沟30V20A35W2SK15-GRN沟20V 2.5-5mA0.1W2SK15MN沟30V0.8-2.8mA0.1W场效应直流/音频管2SK15N沟20V10mA100mW2SK15-ON沟20V0.8-1.6mA0.1W2SK15-PN沟20V0.45-5mA0.1W2SK15-RN沟20V0.45-0.9m0.1W2SK15-YN沟20V 1.4-2.8mA0.1W2SK1600N沟800V3A75W2SK1601N沟900V3A75W2SK1602N沟800V 2.8A40W2SK1603N沟900V 2.5A40W2SK1605N沟450V5A50W2SK1606N沟450V8A50W2SK1607N沟450V13A120W2SK1608N沟500V5A50W2SK1609N沟500V8A50W2SK160AN沟50V0.5-12mA0.15W场效应音频/前置/输入2SK160K4N沟30V 1.5mA0.15W场效应音频/前置/输入级管2SK160K5N沟30V3mA0.15W场效应音频/前置/输入级管2SK160K6N沟30V6mA0.15W场效应音频/前置/输入级管2SK160K7N沟30V12mA0.15W场效应音频/前置/输入级管2SK160N沟30V10mA150mW甚高频放大场效应管2SK1610N沟500V13A120W2SK1611-12SK1611N沟800V3A50W2SK1612N沟900V3A50W2SK1613N沟900V5A120W2SK1614N沟900V8A120W2SK1615N沟 3.5V60mA0.16W2SK1616N沟 3.5V70mA0.18W2SK1617N沟 3.5V60mA0.16W2SK1618LN沟600V3A30W2SK1618N沟600V3A30W2SK1618SN沟600V3A30W2SK161-GRN沟18V5-10mA0.2W2SK161N沟18V10mA200mW2SK161-ON沟18V1-3mA0.2W2SK161-YN沟18V 2.5-6mA0.2W2SK1620LN沟150V10A50W2SK1620N沟150V10A50W2SK1620SN沟150V10A50W2SK1621LN沟250V7A50W2SK1621N沟250V7A50W2SK1621SN沟250V7A50W2SK1622LN沟60V25A50W2SK1622N沟60V25A50W2SK1622SN沟60V25A50W2SK1623LN沟100V20A50W2SK1623N沟100V20A50W2SK1623SN沟100V20A50W2SK1624LN沟600V20A50W2SK1624N沟600V4A50W2SK1624SN沟600V20A50W2SK1625LN沟600V7A75W2SK1625N沟600V7A75W2SK1625SN沟600V7A75W2SK1626N沟450V5A35W2SK1627N沟500V5A35W2SK1628N沟450V30A200W2SK1629N沟500V30A200W2SK162N沟40V10mA400mW2SK1630N沟700V3A75W2SK1630SN沟700V3A75W2SK1631N沟700V3A35W2SK1632N沟700V5A150W2SK1632SN沟700V5A150W2SK1633N沟700V5A45W2SK1634N沟700V5A150W2SK1635N沟60V50A130W2SK1636LN沟250V15A75W2SK1636N沟250V15A75W2SK1636SN沟250V15A75W2SK1637N沟600V4A35W2SK1638N沟900V3A60W2SK1639N沟900V4A75W2SK163N沟50V10mA400mW低频放大场效应管2SK1640N沟60V20A通用型场效应管2SK1641N沟250V20A150W2SK1642N沟400V9A40W2SK1643N沟900V5A125W2SK1647LN沟900V2A50W2SK1647N沟900V2A50W2SK1647SN沟900V2A50W2SK1648LN沟60V15A40W2SK1648N沟60V15A40W2SK1648SN沟60V15A40W2SK1649N沟900V6A150W2SK1650N沟900V4A125W2SK1651N沟500V8A80W金属氧化物场效应开关管2SK1653N沟60V45A45W2SK1654N沟250V16A150W金属氧化物场效应功率放大管2SK1654-SN沟250V16A150W金属氧化物场效应功率放大管2SK1655N沟300V16AMOS场效应普通用途管2SK1655-SN沟300V16A150W金属氧化物场效应功率放大管2SK1656N沟30V0.1A0.25W2SK1657N沟30V0.1A0.2W2SK1659-LSN沟900V3A80W场效应开关管2SK165N沟15V5mA300mW通用型场效应管2SK1663-LSN沟800V3A80W场效应开关管2SK1664N沟700V1A35W2SK1665N沟60V45A125W2SK1666N沟60V45A60W2SK1667N沟250V7A通用型场效应管2SK1668N沟250V4A通用型场效应管2SK1669N沟250V30A125W2SK1670N沟250V7A70W2SK1671N沟250V7A125W2SK1673N沟250V24A200W2SK1674N沟300V24A200W2SK1675N沟250V30A250W2SK1676N沟300V30A250W2SK1677N沟450V16A200W2SK1678N沟500V16A200W2SK1679N沟450V20A250W2SK1680N沟500V20A250W2SK1682N沟30V20mA0.15W通用型场效应管2SK1687N沟 3.5V12-60mA0.2W2SK1688N沟 3.5V12-60mA0.2W2SK1689N沟5V20-70mA0.2W2SK168N沟30V10mA200mW2SK1690N沟450V3A50W金属氧化物场效应功率放大管2SK1691N沟450V5A60W金属氧化物场效应功率放大管2SK1692N沟900V7A150W2SK1697N沟60V0.5A通用型场效应管2SK1698N沟60V0.3A通用型场效应管2SK1699N沟450V5A75W2SK169N沟15V50mA400mW低频放大场效应管2SK16-AN沟20V0.5-7mA0.1W2SK16-BN沟20V0.5-7mA0.1W2SK16-CN沟20V0.5-7mA0.1W2SK16HN沟20V0.5-7mA0.1W2SK16N沟20V10mA100mW2SK1700N沟450V5A35W金属氧化物场效应功率放大管2SK1702N沟450V8AMOS场效应普通用途管2SK1703N沟500V5A75W2SK1703SN沟500V5A75W2SK1704N沟500V5A35W2SK1705N沟500V8AMOS场效应普通用途管2SK1706N沟500V8AMOS场效应普通用途管2SK1707N沟700V4A75W金属氧化物场效应功率放大管2SK1707-SN沟700V4A75W金属氧化物场效应功率放大管2SK1708N沟600V4A35W金属氧化物场效应功率放大管2SK1709N沟600V6AMOS场效应普通用途管2SK170-BLN沟40V6-12mA0.4W2SK170-GRN沟40V 2.6-6.5mA0.4W2SK170N沟40V10mA400mW2SK170-VN沟40V10-20mA0.4W2SK170-YN沟40V1-3mA0.4W2SK1710N沟600V6A增强型金属氧化物场效应晶体管2SK1711N沟60V10A25W金属氧化物场效应功率放大管2SK1712N沟60V15A30W金属氧化物场效应功率放大管2SK1713N沟60V22A35W金属氧化物场效应功率放大管2SK1714N沟60V30A40W金属氧化物场效应功率放大管2SK1715N沟60V40A90W金属氧化物场效应功率放大管2SK1716N沟60V2A20W2SK1717N沟60V2A500mW2SK1718N沟60V6A25W2SK1719N沟60V5A20W2SK171N沟20V10mA200mW2SK1720N沟60V45A100W2SK1721N沟500V3A40W2SK1722N沟500V5A60W2SK1723N沟600V12A150W2SK1724N沟30V1A 3.5W2SK1725N沟30V1A1W2SK1726N沟60V1A 3.5W2SK1727N沟60V0.8A1W2SK1728N沟100V1A 3.5W2SK1729N沟100V0.5A1W2SK1730N沟30V 1.8A1W2SK1731N沟30V3A 1.5W2SK1732N沟30V 4.5A 1.5W2SK1734N沟60V 2.5A 1.5W2SK1735N沟60V4A 1.5W2SK1736N沟100V1A1W2SK1737N沟100V 1.8A 1.5W2SK1738N沟100V3A 1.5W2SK173N沟210V10A95WMOS场效应音频/功率放大管2SK1740N沟75mA250mW高频场效应管2SK1742N沟60V10A通用型场效应管2SK1743N沟60V15A通用型场效应管2SK1744N沟60V25A通用型场效应管2SK1745N沟500V18A150W2SK1746N沟600V2A40W2SK1748N沟60V4A20W2SK1748-ZN沟60V8A1W2SK1749N沟60V25A150W场效应开关管2SK1750N沟450V 2.5A50W2SK1750-ZN沟450V5A50W2SK1751N沟500V 2.5A50W2SK1751-ZN沟500V5A50W2SK1752N沟450V5A100W2SK1753N沟500V5A100W2SK1754N沟50V10A45W2SK1756N沟450V8A120W2SK1757N沟500V8A120W2SK1758N沟600V1A30W2SK175N沟180V8A125W场效应开关管2SK1760N沟900V3A100W2SK1761N沟250V12A通用型场效应管2SK1762N沟250V12A通用型场效应管2SK1763N沟30V 2.5A通用型场效应管2SK1764N沟60V2A通用型场效应管2SK1766N沟250V10A40W不间断电源用金属氧化物场效应管2SK1767N沟600V 3.5A40W2SK1768N沟60V12A 1.3W2SK1769N沟600V2A15W2SK176HN沟200V8A125W2SK176N沟200V8A125WMOS场效应音频/开关/功率放大管2SK1770N沟1000V5A通用型场效应管2SK1771N沟12.5V30mA150mW高频放大场效应管2SK1772N沟30V1A通用型场效应管2SK1773N沟1000V4A通用型场效应管2SK1774N沟800V8A通用型场效应管2SK1775N沟900V8A通用型场效应管2SK1776N沟60V10A场效应开关管2SK1777N沟60V15A场效应开关管2SK1778N沟100V10A场效应开关管2SK1784N沟450V6A100W2SK1785N沟500V6A100W2SK1792N沟60V45A100W2SK1793N沟900V2A75W2SK1793-ZN沟900V3A75W2SK1794拆2SK1794N沟900V3A100W2SK1795N沟900V4A140W2SK1796N沟900V5A150W2SK179N沟2SK17-GRN沟20V 2.6-6.5mA0.1W2SK17N沟20V10mA100mW2SK17-ON沟20V0.6-1.4mA0.1W2SK17-RN沟20V0.3-0.75m0.1W2SK17-YN沟20V 1.2-3mA0.1W2SK1803N沟900V8A100W2SK1804N沟100V5A20W2SK1805N沟500V7A125W2SK1807N沟900V4A通用型场效应管2SK1808N沟250V12A通用型场效应管2SK1809N沟600V5A通用型场效应管2SK180N沟600V8A300W2SK1814N沟60V20A45W电机控制场效应管2SK1815N沟60V35A50W电机控制场效应管2SK1817N沟100V20A40W电机控制场效应管2SK1818N沟250V20A50W电机控制场效应管2SK1819N沟450V5A35W电机控制场效应管2SK181N沟800V5A300W2SK1820-LSN沟500V6A80W场效应开关管2SK1821N沟600V2A30W场效应开关管2SK1822N沟60V20A35W电机控制场效应管2SK1823N沟60V50A50W电机控制场效应管2SK1824N沟30V0.01A0.2W金属氧化物场效应开关管2SK1825N沟50V50mA金属氧化物场效应开关管2SK1826N沟50V20mA0.2W高速场效应管2SK1827N沟50V50mA0.1W高速场效应管2SK1828N沟20V20mA200mW高速场效应管2SK1829N沟20V50mA0.1W高速场效应管2SK182EN沟500V18A1000W2SK182N沟600V18A1000W2SK1831N沟450V10A通用型场效应管2SK1832N沟500V10A通用型场效应管2SK1833N沟500V 2.5A40W2SK1834N沟800V2A40W2SK1835N沟1500V4A通用型场效应管2SK1836N沟450V50A通用型场效应管2SK1837N沟500V50A通用型场效应管2SK1839N沟30V100mA150mW金属氧化物低频放大场效应管2SK183EN沟800V10A500W2SK183HEN沟800V10A500W2SK183HN沟1200V10A1000W2SK183N沟800V10A1000W2SK183VEN沟800V10A500W2SK183VN沟1500V10A1000W2SK1840N沟30V100mA200mW金属氧化物低频放大场效应管2SK1841N沟30V100mA200mW金属氧化物低频放大场效应管2SK1842N沟40V1mA通用型场效应管2SK1844N沟70mA12GHz通用型场效应管2SK1845N沟70mA12GHz通用型场效应管2SK1846N沟800V3A40W2SK1847N沟30V0.5A0.25W金属氧化物高压高速开关场效应管2SK1848N沟60V0.4A0.25W金属氧化物高压高速开关场效应管2SK1849N沟100V0.25A0.25W金属氧化物高压高速开关场效应管2SK184-BLN沟50V6-14mA0.2W2SK184-GRN沟50V 2.6-6.5mA0.2W2SK184N沟50V10mA200mW2SK184-ON沟50V0.6-1.4mA0.2W2SK184-YN沟50V 1.2-3mA0.2W2SK1850N沟60V5A 1.8W场效应开关管2SK1851N沟60V7.5A 1.8W场效应开关管2SK1852N沟100V5A 1.8W场效应开关管2SK1853N沟100V7.5A 1.8W场效应开关管2SK1854N沟400V6A40W金属氧化物场效应开关管2SK1855N沟500V12A125W通用型场效应管2SK1858N沟800V3A60W通用型场效应管2SK1859N沟900V6A通用型场效应管2SK185N沟30V5mA320mW高频放大场效应管2SK1862N沟450V3A通用型场效应管2SK1863N沟500V3A通用型场效应管2SK1864N沟500V8A100W金属氧化物场效应开关管2SK1865N沟500V12A100W金属氧化物场效应开关管2SK1867N沟900V2A15W2SK1868N沟60V2A15W2SK1869N沟350V7A场效应开关管2SK186-CN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186-DN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186-EN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186N沟40V10mA300mW低频放大场效应管2SK1871N沟60V15A40W金属氧化物场效应功率放大管2SK1875N沟20V10mA0.1W高频放大场效应管2SK1878N沟100V10A场效应开关管2SK187-CN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-DN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-EN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-FN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187N沟10mA300mW低频放大场效应管2SK1880N沟600V 1.5A通用型场效应管2SK1881-LSN沟60V20A45W电机控制场效应管2SK1882N沟60V12A40W通用型场效应管2SK1883N沟30V18A50W金属氧化物驱动场效应管2SK1884N沟30V22A60W金属氧化物驱动场效应管2SK1885N沟30V35A70W金属氧化物驱动场效应管2SK1886N沟30V15A25W金属氧化物驱动场效应管2SK1887N沟30V20A25W金属氧化物驱动场效应管2SK1888N沟30V30A30W金属氧化物驱动场效应管2SK1889N沟30V35A70W金属氧化物驱动场效应管2SK1890N沟30V22A60W金属氧化物驱动场效应管2SK1891N沟30V35A70W金属氧化物驱动场效应管2SK1892N沟60V15A50W金属氧化物驱动场效应管2SK1893N沟60V18A60W金属氧化物驱动场效应管2SK1894N沟60V30A70W金属氧化物驱动场效应管2SK1895N沟60V12A25W金属氧化物驱动场效应管2SK1896N沟60V15A25W金属氧化物驱动场效应管2SK1897N沟60V25A70W金属氧化物驱动场效应管2SK1898N沟60V15A50W金属氧化物驱动场效应管2SK1899N沟60V18A60W金属氧化物驱动场效应管2SK189N沟场效应音频(低频)管2SK18AN沟40V0.45-2.8m0.2W2SK18N沟40V10mA200mW2SK18-ON沟40V0.8-1.6mA0.2W2SK18-RN沟40V0.45-2.8m0.2W2SK18-YN沟40V 1.4-2.8mA0.2W2SK1900N沟60V30A70W金属氧化物驱动场效应管2SK1901N沟60V12A50W金属氧化物驱动场效应管2SK1902N沟60V15A60W金属氧化物驱动场效应管2SK1903N沟60V25A70W金属氧化物驱动场效应管2SK1904N沟60V10A25W金属氧化物驱动场效应管2SK1905N沟60V12A25W金属氧化物驱动场效应管2SK1906N沟60V20A30W金属氧化物驱动场效应管2SK1907N沟60V12A50W金属氧化物驱动场效应管2SK1908N沟60V15A60W金属氧化物驱动场效应管2SK1909N沟60V25A70W金属氧化物驱动场效应管2SK190EN沟40V6-50mA0.8W场效应音频(低频)管2SK190FN沟40V6-50mA0.8W场效应音频(低频)管2SK190HN沟40V6-50mA0.8W场效应音频(低频)管2SK190N沟40V10mA800mW低频放大场效应管2SK1910N沟60V25A通用型场效应管2SK1911N沟60V40A通用型场效应管2SK1913N沟600V 2.5A40W通用型场效应管2SK1916拆N沟450V18A2SK1916N沟450V18A80W场效应开关管2SK1917-MN沟25V10A50W场效应开关管2SK1918N沟60V25A场效应开关管2SK1919N沟60V40A通用型场效应管2SK191N沟15V10mA1W2SK1920N沟250V4A30W金属氧化物高压高速开关场效应管2SK1929N沟900V 2.5A100W通用型场效应管2SK192AN沟18V3-24mA0.2W2SK192-BLN沟18V12-24mA0.2W2SK192-GRN沟18V6-14mA0.2W2SK192N沟18V10mA200mW2SK192-YN沟18V3-7mA0.2W2SK1930N沟1000V3A100W通用型场效应管2SK1933N沟900V10A通用型场效应管2SK1934N沟1000V8A通用型场效应管2SK1936-01N沟500V10A100W场效应开关管2SK1937-01N沟500V15A125W场效应开关管2SK1938-01N沟500V18A100W场效应开关管2SK1938N沟800V3A125W通用型场效应管2SK1939-01N沟600V8A100W场效应开关管2SK1939N沟900V3A150W通用型场效应管2SK193N沟20V10mA250mW2SK1940-01N沟600V12A125W场效应开关管2SK1940N沟600V12A125W2SK1941拆2SK1941-01N沟600V16A100W场效应开关管2SK1942-01N沟900V3A80W场效应开关管2SK1943-01N沟900V5A80W场效应开关管2SK1944-01N沟900V5A100W场效应开关管2SK1945-01LN沟900V5A80W场效应开关管2SK1945-01SN沟900V5A80W场效应开关管2SK1946-01MN沟60V45A50W电机控制场效应管2SK1947N沟250V50A通用型场效应管2SK1948N沟250V50A通用型场效应管2SK1949N沟60V5A场效应开关管2SK194N沟40V10mA400mW2SK1950N沟60V3A通用型场效应管2SK1951N沟60V25A通用型场效应管2SK1952N沟60V40A通用型场效应管2SK1953N沟600V1A25W场效应开关管2SK1954N沟180V2A20W场效应开关管2SK1957N沟200V5A通用型场效应管2SK1958N沟16V0.01A0.15W2SK1959N沟16V1A2W2SK195N沟20V10mA250mW2SK1960N沟16V 1.5A2W2SK1962N沟16V 1.5A2W2SK1963N沟4V12-60mA0.2W。

美能达184

柯尼卡美能达184详细参数切换到传统表格版基本参数复印功能打印功能扫描功能其它特性复印机附件保修信息基产品类型：数码复合机纠错参数∙颜色类型：黑白纠错∙涵盖功能：复印/打印/扫描纠错∙速度类型：低速纠错∙最大原稿尺寸：A3纠错∙进纸盘容量：标配纸盒：250页手送纸盘：100页纠错∙介质重量：64-157g/m²纠错∙内存容量：32MB 纠错∙耗材描述：碳粉TN117，5500页纠错∙双面功能：手动纠错∙接口类型：USB1.1/2.0 纠错复印功能∙复印速度：18cpm 纠错∙复印分辩率：600×600dpi 纠错∙原稿类型：纸张，书本纠错∙复印尺寸：A3-A5 纠错∙预热时间：低于29秒纠错∙首页复印时间：低于8秒纠错∙连续复印页数：1-99页纠错∙缩放范围：50-200%（以1%为单位）纠错∙无图像区域：4mm 纠错∙灰度等级：256级纠错∙复印其它性能：护照、ID卡复印功能纠错打印功能∙打印控制器：标准配置纠错∙打印速度：18ppm 纠错∙打印分辨率：300dpi×600dpi，600dpi×600dpi 纠错∙打印其它性能：类型：嵌入式纠错扫描功∙扫描控制器：标准配置纠错∙扫描幅面：A3 纠错∙扫描分辨率：150×150dpi，300×300dpi，600×600dpi 纠错∙扫描其它性能：驱动程序：TWAIN 纠错其它特性∙主机尺寸：570×531×449mm 纠错∙重量：23.5kg 纠错∙电源：AC 220-240V，50/60Hz，3.5A 纠错∙功率：800W或更低纠错∙系统平台：服务器：Windows 2000 SP4/Server 2003/Server 2003 64bit/Server 2008/Server 2008 64bit客户端：Windows 2000 SP4/XP SP2/XP 64 bit/Vista/Vista 64bit/7/7 64bit 纠错复印机附件∙包装清单：主机 x1 墨粉 x1电源线 x1使用说明书 x1随机光盘 x1保修卡 x1 纠错保修信息∙保修政策：享受三包服务纠错∙质保时间：1年纠错∙质保备注：购机后1年或复印量达到规定条件先满足者为准纠错∙客服电话：400-820-8825 纠错∙电话备注：周一至周五：9:00-17:30（节假日休息）纠错∙详细内容：柯尼卡美能达按照国家要求，全面执行三包相关规定：7日内免费退货。

2SK241中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」

2SK241
4
2003-03-27
芯片中文手册,看全文,戳
2SK241
5
2003-03-27
特点漏源电压栅源电压漏极电流漏极功耗通道温度存储温度范围
电气特性
特点栅极漏电流漏源电压漏极电流门源截止电压远期转移导纳输入电容反向传输电容功率增益噪声系数
注：I DSS 分类
(Ta = 25°C)
符号
VDS VGS ID PD Tch Tstg
等级
单元
20
V
±5
V
30
mA
Crss
¾
3.0
¾
pF
¾ 0.035 0.050 pF
Gps
VDS = 1赫（图1）
¾
28
¾
dB
¾ 1.7 3.0 dB
O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0
1
2003-03-27
芯片中文手册,看全文,戳
¾
V
IDSS
VDS = 10 V, V GS = 0
（注意） 1.5
¾
14 mA
VGS (OFF) VDS = 10 V, I D = 100 mA
¾
¾ -2.5
V
ïY fsï
VDS = 10 V, V GS = 0, f = 1千赫
¾
10
¾
mS
Ciss
VDS = 10 V, V GS = 0, f = 1兆赫
200
mW
125
°C
-55~125
°C
(Ta = 25°C)
JEDEC
―
JEITA

2SK184GR中文资料

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type2SK184Low Noise Audio Amplifier Applications•High |Y fs|: |Y fs| = 15 mS (typ.) (V DS = 10 V, V GS = 0)•High breakdown voltage: V GDS = −50 V•Low noise: NF = 1.0dB (typ.)(V DS = 10 V, I D = 0.5 mA, f = 1 kHz, R G = 1 kΩ)•High input impedance: I GSS = −1 nA (max) (V GS = −30 V)•Small packageAbsolute Maximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnitGate-drain voltage V GDS−50 VGate current I G 10mADrain power dissipation P D 200mWJunction temperature T j125 °CStorage temperature range T stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application ofhigh temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within theabsolute maximum ratings.Please design the appropriate reliability upon reviewing theToshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) andindividual reliability data (i.e. reliability test report and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Gate cut-off current I GSS V GS=−30 V, V DS= 0 ⎯⎯−1.0nA Gate-drain breakdown voltage V (BR) GDS V DS= 0, I G=−100 μA −50 ⎯⎯ VDrain current I DSS(Note)V DS= 10 V, V GS= 0 1.2 ⎯ 14.0mAGate-source cut-off voltage V GS (OFF)V DS= 10 V, I D= 0.1 μA −0.2 ⎯−1.5V Forward transfer admittance ⎪Y fs⎪V DS= 10 V, V GS= 0, f = 1 kHz 4.0 15 ⎯ mS Input capacitance C iss V DS= 10 V, V GS= 0, f = 1 MHz ⎯ 13 ⎯ pF Reverse transfer capacitance C rss V DG= 10 V, I D= 0, f = 1 MHz ⎯ 3 ⎯ pFNF (1) V DS= 10 V, R G= 1 kΩ, I D= 0.5 mA,f = 10 Hz⎯ 5 10Noise figureNF (2) V DS= 10 V, R G= 1 kΩ, I D= 0.5 mA,f = 1 kHz⎯ 1 2dBNote: I DSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mAUnit: mmJEDEC ―JEITA ―TOSHIBA 2-4E1C Weight: 0.13 g (typ.)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SK1764KYTL-E中文资料

Drain Current ID (A)
Body to Drain Diode Reverse Recovery Time
1000
Typical Capacitance vs. Drain to Source Voltage
1000 300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
3 2 1 G 4 D 1. Gate 2. Drain 3. Source 4. Drain
S
Note:
Marking is "KY". *UPAK is a trademark of Renesas Technology Corp.
3 3
VDS = 10 V, ID = 1 A* VDS = 10 V, VGS = 0, f = 1 MHz
3
VDS = 10 V, ID = 1 A* , RL = 30 Ω
3
Rev.2.00 Sep 07, 2005 page 2 of 6
元器件交易网
2SK1764
2SK1764
Reverse Drain Current vs. Source to Drain Voltage
2.0
Reverse Drain Current IDR (A)
Pulse Test 1.6 10 V 15 V 5V 0.8 0.4 VGS = 0, –5 V
1.2
0
0.4
0.8
1.2
Drain Current ID (A)

1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。