FQB12P20中文资料

-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC RθJA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2000 Fairchild Semiconductor International
-VGS, Gate-Source Voltage [V]
-IDR , Reverse Drain Current [A]
©2000 Fairchild Semiconductor International
Rev. A, May 2000
元器件交易网
FQB12P20 / FQI12P20
-ID, Drain Current [A]
Typical Characteristics
DS(on) R [Ω], Drain-Source On-Resistance
-ID , Drain Current [A]
101
100 10-1
2
150℃
25℃
-55℃
※ Notes : 1. VDS = -40V 2. 250μs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
--
20
50
ns
-- 195 400
ns
--
40
90
ns
(Note 4, 5)
--
60 130
ns
VDS = -160 V, ID = -11.5 S = -10 V
-- 8.1
--
nC
(Note 4, 5)
--
16
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = -250 µA
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- -11.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-46
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.5 A
D
S
!
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Features
• -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V, f = 1.0 MHz
-- 920 1200 pF
-- 190 250
pF
--
30
40
pF
Switching Characteristics
td(on)
-200 --
ID = -250 µA, Referenced to 25°C --
-
IDSS
Zero Gate Voltage Drain Current
VDS = -200 V, VGS = 0 V VDS = -160 V, TC = 125°C
--
--
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
元器件交易网
FQB12P20 / FQI12P20
FQB12P20 / FQI12P20
200V P-Channel MOSFET
May 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.5 A,
-- 180
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
1.44
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
101
100
10-1 0.0
150℃ 25℃
※ Notes : 1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
V
VGS = -10 V, ID = -5.75 A
-- 0.36 0.47
Ω
VDS = -40 V, ID = -5.75 A (Note 4)
--
6.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
V/ns W W
W/°C °C °C