MOS场效应晶体管

Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-14
6.3.3 HEMT, High Electron Mobility Transistor
N-GaAlAs
source
N
+
metal gate
drain
N
+
….......
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-13
6.3.2 GaAs MESFET
source
+
gate
metal N-channel
drain
+
N
N
GaAs
Semi-insulating substrate
MESFET IV characteristics are similar to MOSFET’s but does not require a gate oxide. Question: What is the advantage of GaAs FET over Si FET?
Terms: depletion-mode transistor, enhancement-mode transistor
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-5
6.2 MOSFETs Technology
Polysilicon gate and 1.2nm SiO2
•1.2 nm SiO2 used in production. Leakage current through the oxide limits further thickness reduction.
Chapter 6 MOSFET
The MOSFET (MOS Field-Effect Transistor) is the building block of Gb memory chips, GHz microprocessors, analog, and RF circuits. Match the following MOSFET characteristics with their applications: • small size • high speed • low power • high gain
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-16
6.4 Vt and Body Effect
How to Measure the Vt of a MOSFET
A B
•Method A. Vt is measured by extrapolating the Ids versus Vgs curve to Ids = 0. W I dsat = Coxe (Vgs - Vt ) m nsVds Vgs - Vt •Method B. The Vg at which Ids =0.1mA W/L
(b)
NFET
N+
0V (c) • basic layout of a CMOS inverter
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-9
6.3 Surface Mobilities and High-Mobility FETs
From Gauss’s Law,
Eb = – Qdep/es
Vt = V fb st - Qdep / Coxe
Therefore,
Eb = Coxe
es
(Vt - V fb - st ) Coxe (Vgs - Vt ) C 1 Et ) = oxe (Vgs Vt - 2V fb - 2 st ) ( Eb 2e s 2 =
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-7
CMOS (Complementary MOS) Inverter
Vd d
PFET S D D S NFET 0V
Vin
Vo ut C:
capacitance (of interconnect, 0 V etc.)
Wd max
Qinv = -Coxe (Vgs - Vt ) CdepVsb
Coxe
= -Coxe (Vgs - (Vt
• Redefine Vt as
Cdep Coxe
Vsb ))
Cdep
Vt (Vsb ) = Vt 0
Cdep Coxe
Vsb = Vt 0 Vsb
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Et = -(Qdep Qinv ) / e s = Eb - Qinv / e s = Eb = Coxe
es
es
(Vgs - V fb - st )
Coxe (Vgs Vt 0.2 V) 2e s Vgs Vt 0.2 V
6Toxe
Slide 6-11
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
A CMOS inverter is made of a PFET pull-up device and a (a) NFET pull-down device. Vout = ? if Vin = 0 V.
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-6
6.2 Complementary MOSFETs Technology
NFET PFET
When Vg = Vdd , the NFET is on and the PFET is off. When Vg = 0, the PFET is on and the NFET is off.
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-15
6.3.4 JFET
source
+
P+ gate
drain
+
N
N-channel
N
P-Si
•The gate is a P+N junction.
•The FET is a junction field-effect transistor (JFET).
6.3.1 Surface Mobilities
Vg = Vdd , Vgs = Vdd
Vds > 0
Ids
How to measure the surface mobility:
I ds = W × Qinv × v = WQinv m nsE = WQinv m nsVds / L = WCoxe (Vgs - Vt ) m nsVds / L
Modern Semiconductor Devices for Integrated Circuits (C. Huon the Field-Effect Transistor
In 1935, a British patent was issued to Oskar Heil. A working MOSFET was not demonstrated until 1955. Using today’s terminology, what are 1, 2, and 6?
Slide 6-18
MOSFET Vt and the Body Effect
• Body effect: Vt is a function of Vsb. When the source-body junction is reverse-biased, Vt increases.
Slide 6-8
CMOS (Complementary MOS) Inverter
Vdd
Contact P+
Vin 0V
P+ N+
Vout
N+ P+
V dd
P+ N+
N-well
PFET
N-well
Vin Vout
P-substrate
• NFET and PFET can be fabricated on the same chip.
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 6-1
6.1 Introduction to the MOSFET
Basic MOSFET structure and IV characteristics
+
+
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
(Vgs Vt 0.2) / 6Toxe = 1.5 V / 1210-7 cm = 1.25 MV/cm