太阳能电池光电转换效率汇总

SHORT COMMUNICATION

Research

Solar Cell Ef?ciency Tables

(Version34)

Martin A.Green1*,y,Keith Emery2,Yoshihiro Hishikawa3and Wilhelm Warta4

1ARC Photovoltaics Centre of Excellence,University of New South Wales,Sydney,2052,Australia

2National Renewable Energy Laboratory,1617Cole Boulevard,Golden,CO.,80401,USA

3National Institute of Advanced Industrial Science and Technology(AIST),Research Center for Photovoltaics(RCPV),Central2,Umezono1-1-1,Tsukuba, Ibaraki,305-8568,Japan

4Fraunhofer-Institute for Solar Energy Systems,Department:Solar Cells—Materials and Technology,Heidenhofstr.2;D-79110Freiburg,Germany Consolidated tables showing an extensive listing of the highest independently con?rmed ef?ciencies for solar cells and modules are presented.Guidelines for inclusion of results into these tables are outlined and new entries since January,2009are reviewed.Copyright#2009John Wiley&Sons,Ltd.

key words:solar cell ef?ciency;photovoltaic ef?ciency;energy conversion ef?ciency

Received7May2009

INTRODUCTION

Since January1993,‘Progress in Photovoltaics’has published six monthly listings of the highest con?rmed ef?ciencies for a range of photovoltaic cell and module technologies.1,2By providing guidelines for the inclu-sion of results into these tables,this not only provides an authoritative summary of the current state of the art but also encourages researchers to seek independent con?rmation of results and to report results on a standardised basis.In the previous version of these Tables(Version33)2,results were updated to the new internationally accepted reference spectrum(IEC 60904-3,Ed.2,2008),where this was possible.

The most important criterion for inclusion of results into the tables is that they must have been measured by a recognised test centre listed elsewhere.2A distinction is made between three different eligible areas:total area;aperture area and designated illumination area1.‘Active area’ef?ciencies are not included.There are also certain minimum values of the area sought for the different device types(above0á05cm2for a concen-trator cell,1cm2for a one-sun cell,and800cm2for a module)1.

Results are reported for cells and modules made from different semiconductors and for sub-categories within each semiconductor grouping(e.g.crystalline, polycrystalline and thin?lm).

NEW RESULTS

Highest con?rmed cell and module results are reported in Tables I,II and IV.Any changes in the tables from those previously published2are set in bold type.In most cases,a literature reference is provided that describes either the result reported or a similar result. Table I summarises the best measurements for cells and submodules,Table II shows the best results for modules and Table IV shows the best results for concentrator cells and concentrator modules.Table III contains what might be described as‘notable excep-tions’.While not conforming to the requirements to be recognised as a class record,the cells and modules in this Table have notable characteristics that will be of interest to sections of the photovoltaic community with entries based on their signi?cance and timeliness.

PROGRESS IN PHOTOVOLTAICS:RESEARCH AND APPLICATIONS

Prog.Photovolt:Res.Appl.2009;17:320–326

Published online in Wiley InterScience(https://www.360docs.net/doc/ad5254971.html,)DOI:10.1002/pip.911 *Correspondence to:Martin A.Green,ARC Photovoltaics Centre of

Excellence,University of New South Wales,Sydney,2052,Aus-

tralia.

y E-mail:m.green@https://www.360docs.net/doc/ad5254971.html,.au

Copyright#2009John Wiley&Sons,Ltd.

To ensure discrimination,Table III is limited to nominally10entries with the present authors having voted for their preferences for inclusion.Readers who have suggestions of results for inclusion into this Table are welcome to contact any of the authors with full details.Suggestions conforming to the guidelines will be included on the voting list for a future issue(a smaller number of‘notable exceptions’for concen-trator cells and modules additionally is included in Table IV).

Seven new results are reported in the present version of these Tables.

The?rst new result in Table I is the achievement of 8á4%ef?ciency referenced to the new spectrum for a 17cm2dye-sensitised submodule fabricated by Sony3 and measured by the Japanese National Institute of Advanced Industrial Science and Technology(AIST). Another new result in Table I is improvement in the ef?ciency to2á05%for an organic photovoltaic sub-module(223á5cm2in area)fabricated by Plextronics,

Table I.Con?rmed terrestrial cell and submodule ef?ciencies measured under the global AM1á5spectrum(1000W/m2)at

258C(IEC60904-3:2008,ASTM G-173-03global)

Classi?cation a Ef?c b

(%)Area c

(cm2)

V oc

(V)

J sc

(mA/cm2)

FF d

(%)

Test centre e

(and date)

Description

Silicon

Si(crystalline)25á0?0á54á00(da)0á70642á782á8Sandia(3/99)f UNSW PERL11

Si(multicrystalline)20á4?0á51á002(ap)0á66438á080á9NREL(5/04)f FhG-ISE12

Si(thin?lm transfer)16á7?0á44á017(ap)0á64533á078á2FhG-ISE(7/01)f U.Stuttgart(45m m thick)13 Si(thin?lm submodule)10á5?0á394á0(ap)0á492g29á7g72á1FhG-ISE(8/07)f CSG Solar(1–2m m on glass;

20cells)14

III-V Cells

GaAs(thin?lm)26á1?0á81á001(ap)1á04529á684á6FhG-ISE(7/08)f Radboud U.Nijmegen15 GaAs(multicrystalline)18á4?0á54á011(t)0á99423á279á7NREL(11/95)f RTI,Ge substrate16

InP(crystalline)22á1?0á74á02(t)0á87829á585á4NREL(4/90)f Spire,epitaxial17

Thin Film Chalcogenide

CIGS(cell)19á4?0á6h0á994(ap)0á71633á780á3NREL(1/08)f NREL,CIGS on glass18 CIGS(submodule)16á7?0á416á0(ap)0á661g33á6g75á1FhG-ISE(3/00)f U.Uppsala,4serial cells19 CdTe(cell)16á7?0á5h1á032(ap)0á84526á175á5NREL(9/01)f NREL,mesa on glass20 Amorphous/Nanocrystalline Si

Si(amorphous)9á5?0á3i1á070(ap)0á85917á563á0NREL(4/03)f U.Neuchatel21

Si(nanocrystalline)10á1?0á2j1á199(ap)0á53924á476á6JQA(12/97)Kaneka(2m m on glass)22 Photochemical

Dye sensitised10á4?0á3k1á004(ap)0á72922á065á2AIST(8/05)f Sharp23

Dye sensitised(submodule)8á4W0á3k17á11(ap)0á693g18á3g65á7AIST(4/09)Sony,8serial cells3 Organic

Organic polymer5á15?0á3k1á021(ap)0á8769á3962á5NREL(12/06)f Konarka24

Organic(submodule)2á05W0á3k223á5(ap)6á9030á50259á1NREL(1/09)Plextronics4,25 Multijunction Devices

GaInP/GaAs/Ge32á0?1á5j3á989(t)2á62214á3785á0NREL(1/03)Spectrolab(monolithic) GaInP/GaAs30á3j4á0(t)2á48814á2285á6JQA(4/96)Japan Energy(monolithic)26 GaAs/CIS(thin?lm)25á8?1á3j4á00(t)———NREL(11/89)Kopin/Boeing(4terminal)27 a-Si/m c-Si(thin submodule)j,l11á7?0á4j,l14á23(ap)5á4622á9971á3AIST(9/04)Kaneka(thin?lm)28

a CIGS?CuInGaSe

2;a-Si?amorphous silicon/hydrogen alloy.

b Ef?c.?ef?ciency.

c(ap)?aperture area;(t)?total area;(da)?designated illumination area.

d FF??ll factor.

e FhG-ISE?Fraunhofer Institut fu¨r Solare Energiesysteme;JQA?Japan Quality Assurance;AIST?Japanese National Institute o

f Advanced Industrial Science and Technology.

f Recalibrated from original measurement.

g Reported on a‘per cell’basis.

h Not measured at an external laboratory.

i Stabilised by800h,1sun AM1á5illumination at a cell temperature of508C.

j Measured under IEC60904-3Ed.1:1989reference spectrum.

k Stability not investigated.

l Stabilised by174h,1sun illumination after20h,5sun illumination at a sample temperature of508C.

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip SOLAR CELL EFFICIENCY TABLES321

measured by the National Renewable Energy Labora-tory(NREL)in January2009and reported by Plextronics soon after4.

A new result in Table III is achievement of23á0% ef?ciency in a large100cm2crystalline silicon cell fabricated by Sanyo using the company’s HIT cell approach(amorphous silicon/crystalline silicon het-erojunction)5and measured by AIST.

Another new result in Table III is the improvement of a small area(0á27cm2)stabilised amorphous silicon based tandem cell stack from12á1to12á5%for a device fabricated by United Solar Ovonic and

Table II.Con?rmed terrestrial module ef?ciencies measured under the global AM1á5spectrum(1000W/m2)at a cell temperature of258C(IEC60904-3:2008,ASTM G-173-03global)

Classi?cation a Ef?c.b

(%)Area c

(cm2)

V oc

(V)

I sc

(A)

FF d

(%)

Test centre

(and date)

Description

Si(crystalline)22á9?0á6778(da)5á603á9780á3Sandia(9/96)e UNSW/Gochermann29

Si(large crystalline)20á3?0á616300(ap)66á16á3578á7Sandia(8/07)e SunPower30

Si(multicrystalline)15á5?0á4f1017(ap)14á61á3778á6Sandia(10/94)e Sandia/HEM31

Si(thin-?lm polycrystalline)8á2?0á2661(ap)25á00á32068á0Sandia(7/02)e Paci?c Solar(1–2m m on glass)32 CIGSS13á5?0á73459(ap)31á22á1868á9NREL(8/02)e Showa Shell(Cd free)33

CdTe10á9?0á54874(ap)26á213á2462á3NREL(4/00)e BP Solarex34

a-Si/a-SiGe/a-SiGe(tandem)g10á4?0á5h905(ap)4á3533á28566á0NREL(10/98)e USSC35

a CIGSS?CuInGaSSe;a-Si?amorphous silicon/hydrogen alloy;a-SiGe?amorphous silicon/germanium/hydrogen alloy.

b Ef?c.?ef?ciency.

c(ap)?aperture area;(da)?designated illumination area.

d FF??ll factor.

e Recalibrated from original measurement.

f Not measured at an external laboratory.

g Light soaked at NREL for1000h at508C,nominally1-sun illumination.

h Measured under IEC60904-3Ed.1:1989reference spectrum.

Table III.‘Notable Exceptions’:‘Top ten’con?rmed cell and module results,not class records measured under the global AM1á5spectrum(1000Wmà2)at258C(IEC60904-3:2008,ASTM G-173-03global)

Classi?cation a Ef?c.b

(%)Area c

(cm2)

V oc

(V)

J sc

(mA/cm2)

FF

(%)

Test centre

(and date)

Description

Cells(silicon)

Si(MCZ crystalline)24á7?0á54á0(da)0á70442á083á5Sandia(7/99)d UNSW PERL,SEH MCZ substrate36 Si(moderate area)23á9?0á522á1(da)0á70441á981á0Sandia(8/96)d UNSW PERL,FZ substrate29

Si(large crystalline)23á0W0á6100á4(t)0á72939á680á0AIST(2/08)Sanyo HIT,n-type substrate5

Si(large crystalline)22á0?0á7147á4(t)0á67740á380á6FhG-ISE(3/06)d Sunpower n-type substrate37

Si(large multicrystalline)18á7?0á5217á4(t)0á63937á777á6AIST(2/08)d Mitsubishi Electric,honeycomb38 Cells(other)

GaInP/GaInAs/GaInAs

(tandem)

33á8?1á5e,f0á25(ap)2á96013á186á8NREL(1/07)NREL,monolithic39

CIGS(thin?lm)20á0?0á6e0á419(ap)0á69235á781á0NREL(10/07)d NREL,CIGS on glass40

a-Si/nc-Si/nc-Si(tandem)12á5W0á7g0á27(da)2á0109á1168á4NREL(3/09)United Solar stabilised6,41

Dye-sensitised11á2?0á3h0á219(ap)0á73621á072á2AIST(3/06)d Sharp42

Organic6á4W0á3h,i0á759(ap)0á58516á765á5NREL(12/08)Konarka24

a CIGS?CuInGaSe

2.

b Ef?c.?ef?ciency.

c(ap)?aperture area;(t)?total area;(da)?designated illumination area.

d Recalibrated from original measurement.

e Not measured at an external laboratory.

f Measured under IEC60904-3Ed.1:1989reference spectrum.

g Light soaked under100mW/cm2white light at508C for1000h.

h Stability not investigated.

i Light soaked under simulated AM1á5for about140hs prior to shipment to NREL.

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip 322M.A.GREEN ET AL.

measured at NREL.This triple junction a-Si:H/nc-Si:H/nc-Si:H cell stack6gave improved current compared to the previous record a-Si:H/a-SiGe:H/a-SiGe:H device,more than offsetting a slight reduction in voltage.

Progress also continues to be made with small-area organic bulk heterojunction solar cells with the energy conversion ef?ciency increased from5á4to6á4%in three steps since the previous version of these Tables2. In a recent presentation4,Plextronics reports having a very small area cell(0á04cm2)of6á0%ef?ciency measured by the National Renewable Energy Labora-tory(NREL)in August2008(808mV,10á3mA/cm2 and71á7%for V oc,I sc and FF,respectively).In December2008,Konarka announced achievement of the6%milestone by the University of California,Santa Barbara(UCSB)and Universite′Laval7.This was for a larger but still small(0á13cm2)bulk heterojunction cell fabricated by UCSB and measured by NREL in October2008(880mV,10á6mA/cm2and64á0% for V oc,I sc and FF,respectively).The new feature of this cell was the use of a carbazole based donor polymer(PCDTBT)with PC70BM as the acceptor, together with a10nm thick TiO2hole-blocking layer as an optical spacer8.

In December2008,NREL measured a larger area (0á76cm2)cell fabricated by Konarka with6á4%ef?-ciency.The active layer consisted of a conjugated polymer/fullerene blend.Both components are pro-prietary materials.The smaller voltage and higher current density of this device as listed in Table III compared to the other6%ef?cient devices above, together with a spectral response extending beyond 800nm,suggest the use of appreciably smaller bandgap donor polymer.

Given the relatively immature state of organic cell technology,measurement results for these cells are reported before stabilisation of cell performance,in contrast to most other technologies listed.However, information has been published concerning the stabi-lity of one of the three6%organic cells above.For the carbazole-based cell,supplementary information8suggests the cell degraded1–2%relative during the week after ?rst measurement and5%relative after40days.The

Table IV.Terrestrial concentrator cell and module ef?ciencies measured under the ASTM G-173-03direct beam AM1á5

spectrum at a cell temperature of258C

Classi?cation Ef?c.a

(%)Area b

(cm2)

Intensity c

(suns)

Test centre

(and date)

Description

Single Cells

GaAs28á8W1á2f0á0504(da)232FhG-ISE(1/09)Fraunhofer ISE

Si27á6?1á0e1á00(da)92FhG-ISE(11/04)Amonix back-contact43

CIGS(thin?lm)21á8?1á5f,g0á102(da)14NREL(2/01)d NREL

Multijunction cells

GaInP/GaAs/Ge(2-terminal)40á7?2á4e0á267(da)240NREL(9/06)Spectrolab,lattice-mismatched44 GaInP/GaAs/GaInAs(2-terminal)40á8?2á4e,f0á0976(da)140NREL(7/08)NREL,inverted monolithic45 GaInP/GaInAs/Ge(2-terminal)41á1W2á5f0á0509(da)454FhG-ISE(1/09)Fraunhofer,metamorphic10 Submodules

GaInP/GaAs/Ge27á0?1á5g34(ap)10NREL(5/00)ENTECH46

Modules

Si20á5?0.f f1875(ap)79Sandia(4/89)d Sandia/UNSW/ENTECH(12cells)47‘Notable Exceptions’

GaAs/GaSb(4-terminal)32á6?1á7g0á053(da)100Sandia(10/89)d Boeing,mechanical stack48

InP/GaInAs(3-terminal)31á7?1á6f0á063(da)50NREL(8/90)d NREL,monolithic49

GaInP/GaInAs(2-terminal)30á2?1á2g0á1330(da)300NREL/FhG-ISE

(6/01)

Fraunhofer,monolithic50

GaAs(high concentration)26á6?1á00á203(da)1000Sandia(8/88)d Varian51

Si(large area)21á7?0á720á0(da)11Sandia(9/90)d UNSW laser grooved52

a Ef?c.?ef?ciency.

b(da)?designated illumination area;(ap)?aperture area.

c One sun corresponds to direct irradiance of1000Wmà2.

d Recalibrated from original measurement.

e Measured under a low aerosol optical depth spectrum similar to ASTM G-173-03direct53.

f Not measured at an external laboratory.

g Measured under old ASTM E891-87reference spectrum.

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip SOLAR CELL EFFICIENCY TABLES323

cell was encapsulated using a glass front cover and a UV-curing expoxy on the rear and appears to have been unilluminated in air for most of this period.A good review of the stability of present and past organic cells has been published elsewhere9.

Concentrator cell and module results(Table IV)are now referenced against the direct normal spectrum tabulated in ASTM G173-03(except where otherwise noted).Two new results are reported.One is an increase in the ef?ciency of a GaAs concentrator cell to 28á8%as measured under the new reference spectrum. The cell was both fabricated and measured by the Fraunhofer Institute for Solar Energy Systems(FhG-ISE).The cell maintained the measured ef?ciency over the152–232suns concentration range(more precisely, 152–232kW/m2direct irradiance range).

A further signi?cant new result in Table IV has been a new overall record for cell performance under con-centrated sunlight.An ef?ciency of41á1%is reported10 for a metamorphic(non-lattice-matched)Ga0á35In0á65P/ Ga0á83In0á17As/Ge cell fabricated and measured by FhG-ISE under the new reference spectrum.This cell maintained this ef?ciency over the411–454suns concentration range.Parameters at454suns were 2á867V,0á3805A and87á2%for V oc,I sc and FF, respectively.An ef?ciency of40á4%was measured even at880suns concentration.Also shown in Table IV are other recent concentrator cells of comparable ef?ciency as fabricated by two other groups,with all three results close to equivalent given the measurement uncertainties.Note that the40á7%cell fabricated by Spectrolab and measured by NREL in September2006 is the highest ef?ciency device that has been fully independently con?rmed.

DISCLAIMER

While the information provided in the tables is provided in good faith,the authors,editors and publishers cannot accept direct responsibility for any errors or omissions.

REFERENCES

1.Green MA,Emery K,King DL,Igari S.Solar cell

ef?ciency tables(version15).Progress in Photovoltaics: Research and Applications2000;8:187–196.

2.Green MA,Emery K,Hishikawa Y,Warta W.Solar cell

ef?ciency tables(version33).Progress in Photovoltaics: Research and Applications2009;17:85–94.

3.Morooka M,Noda K.Development of dye-sensitized

solar cells and next generation energy devices.

88th Spring Meeting of The Chemical Society of Japan Tokyo,26March2008.

4.Tipnis R.‘‘Printed Solar Power:From Lab to Market’’,

Nortech Advanced Energy Speaker Series,February3, 2009(available at https://www.360docs.net/doc/ad5254971.html,/Docs/ Ritesh%20Tipnis%20Plextronics.pdf).

5.Maruyama E,Terakawa A,Taguchi M,Yoshimine Y,Ide

D,Baba T,Shima M,Sakata H,Tanaka M.Sanyo’s challenges to the development of high-ef?ciency HIT solar cells and the expansion of HIT business,4th World Conference on Photovoltaic Energy Conversion (WCEP-4),Hawaii,May,2006.

6.Yan B,Yue G,Guha S.‘‘Status of nc-Si:H Solar Cells at

United Solar and Roadmap for Manufacturing a-Si:H and nc-Si:H Based Solar Panels’’in‘‘Amorphous and Polycrystalline Thin-Film Silicon Science and Technol-ogy2007’’,edited by V.Chu,S.Miyazaki,A.Nathan,J.

Yang,H-W.Zan(Materials Research Society Sym-posium Proceeding,V ol.989,Warrendale,PA,2007), Paper#:0989-A15-01.

7.Press release,Konarka,December9,2009.

8.Park SH,Roy A,Beaupre S,Cho S,Coates N,Moon JS,

Moses D,Leclerc M,Lee K,Heeger AJ.Bulk hetero-junction solar cells with internal quantum ef?ciency approaching100%.Nature Photonics2009;3:297–303.

9.Jorgensen M,Norrman K,Krebs FC.Stability/Degra-

dation of polymer solar cells.Solar Energy Materials and Solar Cells2008;92:686–714.

10.http://www.ise.fraunhofer.de/press-and-media/press-

releases/press-releases-2009/world-record-41.1-ef?ciency-reached-for-multi-junction-solar-cells-at-fraunhofer-ise. 11.Zhao J,Wang A,Green MA,Ferrazza F.Novel19.8%

ef?cient‘‘honeycomb’’textured multicrystalline and

24.4%monocrystalline silicon solar cells.Applied Phy-

sics Letters1998;73:1991–1993.

12.Schultz O,Glunz SW,Willeke GP.Multicrystalline

silicon solar cells exceeding20%ef?ciency.Progress in Photovoltaics:Research and Applications2004;12: 553–558.

13.Bergmann RB,Rinke TJ,Berge C,Schmidt J,Werner

JH.Advances in monocrystalline Si thin-?lm solar cells by layer transfer Technical Digest,PVSEC-12June, 2001,Chefju Island,Korea,11–15.

14.Keevers MJ,Young TL,Schubert U,Green MA.10%

Ef?cient CSG Minimodules,22nd European Photovol-taic Solar Energy Conference,Milan,September2007.

15.Bauhuis GJ,Mulder P,Schermer JJ,HaverKamp EJ,van

Deelen J,Larsen PK.High ef?ciency thin?lm GaAs solar cells with improved radiation hardness, 20th European Photovoltaic Solar Energy Conference, Barcelona,June,2005;468–471.

16.Venkatasubramanian R,O’Quinn BC,Hills JS,Sharps

PR,Timmons ML,Hutchby JA,Field H,Ahrenkiel A,

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip 324M.A.GREEN ET AL.

Keyes B.18.2%(AM1.5)ef?cient GaAs solar cell on optical-grade polycrystalline Ge substrate,Conference Record,25th IEEE Photovoltaic Specialists Conference Washington,May1997,31–36.

17.Keavney CJ,Haven VE,Vernon SM.Emitter structures

in MOCVD InP solar cells Conference Record,21st IEEE Photovoltaic Specialists Conference Kissimimee,May, 1990,141–144.

18.Repins I,Contreras M,Romero Y,Yan Y,Metzger W,Li

J,Johnston S,Egaas B,DeHart C,Scharf J,McCandless BE,Nou?R.‘‘Characterization of19.9%-ef?cienct CIGS Absorbers’’,IEEE Photovoltaics Specialists Con-ference Record2008;33.

19.Kessler J,Bodegard M,Hedstrom J,Stolt L.New world

record Cu(In,Ga)Se2based mini-module:16.6% Proceedings,16th European Photovoltaic Solar Energy Conference Glasgow,2000,2057–2060.

20.Wu X,Keane JC,Dhere RG,DeHart C,Duda A,Gessert

TA,Asher S,Levi DH,Sheldon P.16.5%-ef?cient CdS/ CdTe polycrystalline thin-?lm solar cell Conf.Proceed-ings,17th European Photovoltaic Solar Energy Con-ference Munich,22–26October2001,995–1000. 21.Meier J,Sitznagel J,Kroll U,Bucher C,Fay S,Moriarty

T,Shah A.Potential of amorphous and microcrystalline silicon solar cells.Thin Solid Films2004;451–452:518–524.

22.Yamamoto K,Toshimi M,Suzuki T,Tawada Y,Okamoto

T,Nakajima A.Thin?lm poly-Si solar cell on glass substrate fabricated at low temperature MRS Spring Meeting April,1998,San Francisco.

23.Chiba Y,Islam A,Kakutani K,Komiya R,Koide N,Han

L.High ef?ciency dye sensitized solar cells Technical Digest,15th International Photovoltaic Science and Engineering Conference Shanghai,October,2005, 665–666.

24.See https://www.360docs.net/doc/ad5254971.html,.

https://www.360docs.net/doc/ad5254971.html,ird D,Vaidya S,Li S,Mathai M,Woodworth B,Sheina

E,Williams S,Hammond T.‘‘Advances in Plexcore TM active layer technology systems for organic photovoltaics: Roof-top and accelerated lifetime analysis of high per-formance organic photovoltaic cells’’2007,SPIE Proc., V ol.6656,No.12.

26.Ohmori M,Takamoto T,Ikeda E,Kurita H.High ef?-

ciency InGaP/GaAs tandem solar cells Tech.Digest, International PVSEC-9Miyasaki,Japan,November, 1996,525–528.

27.Mitchell K,Eberspacher C,Ermer J,Pier D.Single

and tandem junction CuInSe2cell and module technol-ogy Conf.Record,20th IEEE Photovoltaic Specialists Conference Las Vegas,September,1988,1384–1389.

28.Yoshimi M,Sasaki T,Sawada T,Suezaki T,Meguro T,

Matsuda T,Santo K,Wadano K,Ichikawa M,Nakajima A,Yamamoto K.High ef?ciency thin?lm silicon hybrid solar cell module on1m2-class large area substrate Conf.

Record,3rd World Conference on Photovoltaic Energy Conversion Osaka,May,2003,1566–1569.

29.Zhao J,Wang A,Yun F,Zhang G,Roche DM,Wenham

SR,Green MA.20,000PERL silicon cells for the‘‘1996 World Solar Challenge’’solar car race.Progress in Photovoltaics1997;5:269–276.

30.Rose D,Koehler O,Kaminar N,Mulligan B,King D.

Mass Production of PV modules with18%total-area ef?ciency and high energy delivery per peak watt,IEEE 4th World Conference on Photovoltaic Energy Conver-sion,pp.2018–2023,May7–12,2006Waikoloa,HI.

31.King DL,Schubert WK,Hund TD.World’s?rst15%

ef?ciency multicrystalline silicon modules Conf.

Record,1st World Conference on Photovoltaic Energy Conversion Hawaii,December,1994,1660–1662. 32.Basore PA.Pilot production of thin-?lm crystalline silicon

on glass modules Conf.Record,29th IEEE Photovoltaic Specialists Conference New Orleans,May,2002,49–52.

33.Tanaka Y,Akema N,Morishita T,Okumura D,Kushiya

K.Improvement of V oc upward of600mV/cell with CIGS-based absorber prepared by Selenization/Sulfur-ization Conf.Proceedings,17th EC Photovoltaic Solar Energy Conference Munich,October,2001,989–994.

34.Cunningham D,Davies K,Grammond L,Mopas E,

O’Connor N,Rubcich M,Sadeghi M,Skinner D, Trumbly https://www.360docs.net/doc/ad5254971.html,rge area Apollo TM module performance and reliability Conf.Record,28th IEEE Photovoltaic Specialists Conference Alaska,September,2000,13–18.

35.Yang J,Banerjee A,Glatfelter T,Hoffman K,Xu X,

Guha S.Progress in triple-junction amorphous silicon-based alloy solar cells and modules using hydrogen dilution Conf.

Record,1st World Conference on Photovoltaic Energy Conversion Hawaii,December,1994,380–385.

36.Zhao J,Wang A,Green MA.24.5%ef?ciency silicon

PERT cells on MCZ substrates and24.7%ef?ciency PERL cells on FZ substrates.Progress in Photovoltaics 1999;7:471–474.

37.McIntosh K,Cudzonovic M,Smith D,Mulligan W,

Swanson R.The choice of silicon wafer for the pro-duction of rear-contact solar cells Conference.Record, 3rd World Conference on Photovoltaic Energy Conver-sion Osaka,May2003,971–974.

38.Niinobe D,Nishimura K,Matsuno S,Fujioka H,Katsura

T,Okamoto T,Ishihara T,Morikawa H,Arimoto S.

‘‘Honeycomb structured multi-crystalline silicon solar cells with18.6%ef?ciency via industrially applicable laser-process’’,23rd European Photovoltaic Solar Energy Conference and Exhibition,Valencia,Session Reference:2CV.5.74,2008.

39.Geisz J,Kurtz S,Wanlass MW,Ward JS,Duda A,

Friedman DJ,Olson JM,McMahon WE,Moriarty TE, Kiehl JT.High-ef?ciency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction.Applied Physics Letters2007;91: 023502.

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip SOLAR CELL EFFICIENCY TABLES325

40.Repins I,Contreras MA,Egaas B,DeHart C,Scharf J,

Perkins CL,To B,Nou?R.19.9%-ef?cient ZnO/CdS/ CuInGaSe2solar cell with81.2%?ll factor.Progress in Photovoltaics:Research and Applications2008;16(3): pp.235–239.

41.Yang J,Banerjee A,Sugiyama S,Guha S.Recent

progress in amorphous silicon alloy leading to13% stable cell ef?ciency Conf.Record,26th IEEE Photo-voltaic Specialists Conference Anaheim,September/ October,1997,563–568.

42.Han L,Fukui A,Fuke N,Koide N,Yamanaka R.High

ef?ciency of dye sensitized solar cell and module, 4th World Conference on Photovoltaic Energy Conver-sion(WCEP-4),Hawaii,May,2006.

43.Slade A,Garboushian V.27.6%ef?cient silicon con-

centrator cell for mass production,Technical Digest, 15th International Photovoltaic Science and Engineer-ing Conference,Shanghai,October2005;701.

44.King RR,Law DC,Edmondson KM,Fetzer CM,Kinsey

GS,Yoon H,Sherif RA,Karam NH.40%ef?cient metamorphic GaInP/GaInAs/Ge multijunction solar cells.Applied Physics Letters2007;90:183516.

45.Geisz JF,Friedman DJ,Ward JS,Duda A,Olavarria WJ,

Moriarty TE,Kiehl JT,Romero MJ,Norman AG,Jones KM.40.8%ef?cient inverted triple-junction solar cell with two independently metamorphic junctions.Applied Physics Letters2008;93:123505.

46.O’Neil MJ,McDanal AJ.Outdoor measurement of28%

ef?ciency for a mini-concentrator module,Proceedings, National Center for Photovoltaics Program Review Meeting,Denver,16–19April,2000.47.Chiang CJ,Richards EH,A20%ef?cient photovoltaic

concentrator module Conf.Record,21st IEEE Photo-voltaic Specialists Conference Kissimimee,May,1990, 861–863.

48.Fraas LM,Avery JE,Sundaram VS,Kinh VT,Davenport

TM,Yerkes JW,Gee JM,Emery KA.Over35%ef?cient GaAs/GaSb stacked concentrator cell assemblies for terrestrial applications Conf.Record,21st IEEE Photo-voltaic Specialists Conference Kissimimee,May,1990, 190–195.

49.Wanlass MW,Coutts TJ,Ward JS,Emery KA,Gessert

TA,Osterwald CR.Advanced high-ef?ciency concen-trator tandem solar cells Conf.Record,21st IEEE Photo-voltaic Specialists Conference Kissimimee,May,1990, 38–45.

50.Bett AW,Baur C,Beckert R,Diimroth F,Letay G,Hein

M,Muesel M,van Riesen S,Schubert U,Siefer G, Sulima OV,Tibbits TND.Development of high-ef?ciency mechanically stacked GaInP/GaInAs-GaSb triple-junction concentrator solar cells Conf.Record,17th European Solar Energy Conference Munich,October,2001,84–87.

51.MacMillan HF,Hamaker HC,Kaminar NR,Kuryla MS,

Ladle Ristow M,Liu DD,Virshup GF.28%ef?cient GaAs solar cells20th IEEE Photovoltaic Specialists Conference Las Vegas,September,1988,462–468. 52.Zhang F,Wenham SR,Green https://www.360docs.net/doc/ad5254971.html,rge area,concen-

trator buried contact solar cells.IEEE Transactions on Electron Devices1995;42:144–149.

53.Gueymard CA,Myers D,Emery K.Proposed reference

irradiance spectra for solar energy systems testing.Solar Energy2002;73:443–467.

Copyright#2009John Wiley&Sons,Ltd.Prog.Photovolt:Res.Appl.2009;17:320–326

DOI:10.1002/pip 326M.A.GREEN ET AL.