贴片三极管封装贴片二极管封装

贴片三极管封装-贴片二极管封装MMBD4148贴片式-SOT封装-二极管SOT-23 Plastic-Encapsulate Diodes

Electrical Ratings @TA=25℃

Parameter

Reverse Breakdown V oltage

Typ.

Max.

Conditions

V (BR) RIR=100μA

IF=1mA IF=10mA

Forward voltage

VF3IF=50mA VF4IF=150mA IR1μR=75V IR2VR=20V VR=0V,f=1MHz CTIF=IR=10mA

trrIrr=,RL=100?

Reverse current

Capacitance between terminals Reverse Recovery Time贴片元件封装-电阻,电容,电感,二极管,三极管,IC

贴片元件封装1电阻

最为常见的有0201、0402、0805、0603、1206、1210、1812、2016、2512几类

1）贴片电阻的封装与尺寸如下表：

英制(mil) 公制(mm) 长(L)(mm) 宽(W)(mm) 高(t)(mm) 0201 0603 ±±±0402 1005 ±±±0603 1608 ±±±0805 2016 ± ± ± 1206 3216 ± ± ± 1210 3225 ±±±1812 4832 ±±±2016 5025 ±±±2512 6432 ± ± ± 2）贴片电阻的封装、功率与电压关系如下表：英制(mil)公制(mm)额定功率@ 70°C 最大工作电压(V) 0201 06031/20W 25 040210051/16W 50 060316081/10W 50 080520161/8W 150 1206 32161/4W 200

1210 32251/3W 200 181248321/2W 200 201650253/4W

三极管的封装及引脚识别

三极管的封装及引脚识别三极管的封装形式是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。

图1 晶体管的外形及尺寸 1 封装 1.金属封装（1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。（2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。（3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。（4）E型：引脚排列与D型相同，封装外形如图3（d）所示。（5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装（1）S－1型、S－2型、S－4型：用于封装小功率三极管，其中以S－1型应用最为普遍。S－1、S－2、S－3型管的封装外形如图2（g）、（h）、（i）所示。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。（2）S－5型：主要用于大功率三极管。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。S－5型的封装外形如图2（j）所示。（3）S－6lA、S－6B、S－7、S－8型：主要用于大功率三极管，其中以S－7型最为常用。S－6A 引脚排列：切角面面对自己，引脚朝下，从左到右依次为B、C、E。它们的引脚排列与外形分别如图5.12（k）、（l）、（m）、（n）所示。（4）常见进口管的外形封装结构：TO－92与部标S－1相似，TO－92L与部标S－4相似，TO126与S－5相似，TO-202与部标S－7相似。

2SC4617贴片三极管 SOT-523三极管封装2SC4617参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4617 TRANSISTOR (NPN) FEATURES z Low Cob:Cob=2.0pF(Typ) z Complement to 2SA1774 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage V (BR)CBO I C =50uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50uA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C = 1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.4 V Transition frequency f T V CE =12V, I C =2mA, f=100MHz 180 MHz Collector output capacitance C ob V CB =12V, I E =0, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS A,May,2011

三极管的封装形式

三极管的封装形式是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。

二极管封装大全

二极管封装大全篇一：贴片二极管型号、参数贴片二极管型号.参数查询 1、肖特基二极管SMA（DO214AC） 2010-2-2 16:39:35 标准封装： SMA 2010 SMB 2114 SMC 3220 SOD123 1206 SOD323 0805 SOD523 0603 IN4001的封装是1812 IN4148的封装是1206 篇二：常见贴片二极管三极管的封装常见贴片二极管/三极管的封装常见贴片二极管/三极管的封装二极管：名称尺寸及焊盘间距其他尺寸相近的封装名称 SMC SMB SMA SOD-106 SC-77A SC-76/SC-90A SC-79 三极管： LDPAK

DPAK SC-63 SOT-223 SC-73 TO-243/SC-62/UPAK/MPT3 SC-59A/SOT-346/MPAK/SMT3 SOT-323 SC-70/CMPAK/UMT3 SOT-523 SC-75A/EMT3 SOT-623 SC-89/MFPAK SOT-723 SOT-923 VMT3 篇三：常用二极管的识别及ic封装技术常用晶体二极管的识别晶体二极管在电路中常用“D”加数字表示，如： D5表示编号为5的二极管。 1、作用：二极管的主要特性是单向导电性，也就是在正向电压的作用下，导通电阻很小;而在反向电压作用下导通电阻极大或无穷大。正因为二极管具有上述特性，无绳电话机中常把它用在整流、隔离、稳压、极性保护、编码控制、调频调制和静噪等电路中。电话机里使用的晶体二极管按作用可分为：整流二极管(如1N4004)、隔离二极管(如1N4148)、肖特基二极管(如BAT85)、发光二极管、稳压二极管等。 2、识别方法：二极管的识别很简单，小功率二极管的N极(负极)，在二极管外表大多采用一种色圈标出来，有些二极管也用二极管专用符号来表示P极(正极)或N极(负极)，也有采用符号标志为“P”、“N”来确定二极管极性的。发光二极管的正负极可从引脚长短来识别，长

常用贴片元件封装尺寸

常用贴片元件封装 1 电阻：最为常见的有0201、0402、0805、0603、1206、1210、1812、2010、2512几类 1）贴片电阻的封装与尺寸如下表：英制(mil) 公制(mm) 长(L)(mm) 宽(W)(mm) 高(t)(mm) 0201 0603 0.60±0.05 0.30±0.05 0.23±0.05 0402 1005 1.00±0.10 0.50±0.10 0.30±0.10 0603 1608 1.60±0.15 0.80±0.15 0.40±0.10 0805 2012 2.00±0.20 1.25±0.15 0.50±0.10 1206 3216 3.20±0.20 1.60±0.15 0.55±0.10 1210 3225 3.20±0.20 2.50±0.20 0.55±0.10 1812 4832 4.50±0.20 3.20±0.20 0.55±0.10 2010 5025 5.00±0.20 2.50±0.20 0.55±0.10 2512 6432 6.40±0.20 3.20±0.20 0.55±0.10 2）贴片电阻的封装、功率与电压关系如下表：英制(mil)公制(mm)额定功率@ 70°C 最大工作电压(V) 0201 0603 1/20W 25 0402 1005 1/16W 50 0603 1608 1/10W 50 0805 2012 1/8W 150 1206 3216 1/4W 200

1210 3225 1/3W 200 1812 4832 1/2W 200 2010 5025 3/4W 200 2512 6432 1W 200 3）贴片电阻的精度与阻值贴片电阻阻值误差精度有±1％、±2％、±5％、±10％精度， J －表示精度为5％、 F－表示精度为1％。 T －表示编带包装阻值范围从0R-100M 2电容： 1）贴片电容可分为无极性和有极性两种，容值范围从0.22pF-100uF 无极性电容下述两类封装最为常见，即0805、0603；英制尺寸公制尺寸长度宽度厚度 0402 1005 1.00±0.05 0.50±0.05 0.50±0.05 0603 1608 1.60±0.10 0.80±0.10 0.80±0.10 0805 2012 2.00±0.20 1.25±0.20 0.70±0.20 1206 3216 3.20±0.30 1.60±0.20 0.70±0.20 1210 3225 3.20±0.30 2.50±0.30 1.25±0.30 1808 4520 4.50±0.40 2.00±0.20 ≤2.00 1812 4532 4.50±0.40 3.20±0.30 ≤2.50 2225 5763 5.70±0.50 6.30±0.50 ≤2.50 3035 7690 7.60±0.50 9.00±0.05 ≤3.00

贴片三极管上的印字与真实型号对照手册

贴片三极管上的印字与真实名称的对照表印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA

常见贴片二、三极管的封装

www.mccsemi .com PACKAGE OUTLINES Note: Drawings Are Not To Scale C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .166 ----- 4.20 B ----- .079 ----- 2.00 ? C ----- .020 ----- 0.52 ? D 1.000 --- 25.40 --- DO-35 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .028 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-41 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .021 .025 .53 .64 ? D 1.000 --- 25.40 --- A-405 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .230 .300 5.80 7.60 B .104 .140 2.60 3.60 ? C .026 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-15 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .300 ----- 7.62 B ----- .107 ----- 2.72 ? C .018 .022 0.46 0.56 ? D 1.000 --- 25.40 --- DO-7 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .370 ----- 9.50 B ----- .250 ----- 6.40 ? C .048 .052 1.20 1.30 ? D 1.000 --- 25.40 --- DO-201AD

MMBT2907AT贴片三极管 SOT-523三极管封装MMBT2907AT参数

A,Jan,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES z Complementary to NPN Type (MMBT2222AT) z Small Package MARKING:2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C =-0.1mA 75 h FE(2) V CE =-10V, I C =-1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -1.6 V I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8 pF Emitter input capacitance C ib V EB =-2V, I C =0, f=1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V, I C =-150mA, I B1=-15mA 40 ns Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I B1=I B2=-15mA 30 ns Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ 3. COLLECTOR

常见二极管封装

二极管常用封装（2013.9.22 Wu Edited.）目录一、常用二极管封装概述 (3) 二、常用二极管封装尺寸 (5) 1、表面安装模压型 (5) 1.1、SOD-723 (5) 1.2、SOD-523 (6) 1.3、SOD-323 (7) 1.4、SOD-123 (8) 1.5、DO-213AA (LL-34,Mini-Melf) (9) 1.6、SOD-106 (12) 1.7、DO-214AC(SMA) ........................................................................ 错误!未定义书签。 1.8、DO-213AB(Melf) (13) 1.9、SMAJ (17) 1.10、DO-214AA(SMB) (18) 1.11、DO-214AB(SMC) (20) 2、管脚式 (21) 2.1、DO-34 (21) 2.2、DO-35 (22) 2.3、DO-41Mini (23) 2.4、A-405 (24) 2.5、DO-15 (25) 2.6、DO-27 (26) 2.7、DO-204AR (27) 2.8、DO-41 (28) 2.9、R-1 (29) 2.10、R-3 (30)

2.11、R-6 (31) 3、直插式 (32) 3.1、TO-220AC (32)

一、常用二极管封装概述 1、表面安装模压型英制公制封装系列封装管脚数0402 1006 VMD2 2 1406 SOD-723 2 0603 1608 EMD2 SOD-523 2 0603 1608 EMD3 SOT-416 3 0603 1608 EMD4 4 0805 2012 UMD2 SOD-323 2 0805 2012 UMD3 SOT-323 3 0805 2012 UMD4 SOT-343 4 0805 2012 UMD5 SOT-353 5 0805 2012 UMD6 SOT-363 6 2913 SSD3 SOT-23 3 2916 SMD3 SOT-346 3 2916 SMD4 SC-61A 4 2916 SMD5 SC-74A 5 2916 SMD6 SOT-457 6 1206 3216 PMPU SOD-123 2 3516 Mini-Melf DO-213AA(LL-34) 2 4526 PMDS SOD-106 2 2010 5025 SMA DO-214AC 2 2010 5025 Melf DO-213AB 2 5426 DO-214 2 5626 SMAJ 2 2114 5436 SMB DO-214AA 2 3220 8250 SMC DO-214AB 2 2、管脚式英制公制封装系列封装管脚数2718 MSD DO-34 2 3718 GSD DO-35 2 3025 MSR DO-41Mini 2 5025 A-405 2 6333 DO-15 2 8952 DO-27 2 9363 DO-204AR 2 5126 DO-41 2 3025 R-1 2 3939 R-3 2 8988 R-6 2

贴片三极管封装形式

贴片三极管封装 1A SOT323 BC846AW NPN 1A SOT416 BC846AT N BC546A 1A SOT89 PXT3904 NPN 1A SOT89 SXT3904 NPN -1A SOT323 PMST3904 N 2N3904 1A- SOT323 BC846AW N BC546A 1AM SOT23 MMBT3904L N 2N3904 1Ap SOT23 BC846A N BC546A 1At SOT23 BC846A N BC546A 1At SOT323 BC846AW N BC546A 1B SOT23 BC846B NPN 1B SOT23 BC846B N BC546B 1B SOT23 FMMT2222 NPN 1B SOT23 FMMT2222 N 2N2222 1B SOT23 IRLML2803 F n-ch mosfet 30V 0.9A 1B SOT23 MMBT2222 NPN 1B SOT23 MMBT2222 N 2N2222 1B SOT23 PMBT2222 NPN 1B SOT23 SMBT2222 NPN 1B SOT23 YTS2222 NPN 1B SOT323 BC846BW NPN 1B SOT416 BC846BT N BC546B 1B SOT89 PXT2222 NPN -1B SOT323 PMST2222 N 2N2222 1B- SOT323 >BC846BW N BC546B

1Bs SC74 BC817UPN N 1Bt SOT23 BC846B N BC546B 1Bt SOT323 BC846BW N BC546B 1C SOT23 FMMT-A20 NPN 1C SOT23 FMMT-A20 N MPSA20 1C SOT23 IRLML6302 F p-ch mosfet 20V 0.6A 1C SOT23 MMBTA20 NPN 1C SOT23 MMBTA20L N MPS3904 1C SOT23 SMBTA20 NPN 1Cp SOT23 BAP50-05 B dual cc GP RF pin diode 1Cs SOT363 BC847S BC457 1D SOT23 BC846 NPN 1D SOT23 IRLML5103 F p-ch mosfet 30V 0.6A 1D SOT23 MMBTA42 NPN 1D SOT23 MMBTA42 N MPSA42 300V npn 1D SOT23 SMBTA42 NPN 1D SOT323 BC846W NPN 1D SOT89 SXTA42 NPN 1D- SOT323 BC846W N BC456 1DN 2SC4083 N npn 11V 3.2GHz TV tuners 1Dp SOT23 BC846 N BC456 1DR SC59 MSD1328-RT1 NPN 1DR SOT346 MSD1328R N npn gp 25V 500mA 1Ds SC74 BC846U N BC456 1Ds SOT363 BC846U BC456 1Dt SOT23 BC846 N BC456 1Dt SOT323 BC846W N BC456 1E FMMT-A43 N MPSA43 1E SOT23 BC847A NPN 1E SOT23 BC847A N BC547A 1E SOT23 FMMT-A43 NPN 1E SOT23 MMBTA43 NPN 1E SOT23 MMBTA43 N MPSA43 200V npn 1E SOT23 SMBTA43 NPN 1E SOT323 BC847AW NPN 1E SOT416 BC847AT N BC547A 1E SOT89 SXTA43 NPN 1E- SOT323 BC847A N BC547A 1EN 2SC4084 N npn 20V 2.0GHz TV tuners 1Ep SOT23 BC847A N BC547A 1ER SOT23R BC847AR R BC547A 1Es SOT23 BC847A N BC457 1Es SOT323 BC847AW N BC457

MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR (PNP) FEATURES ● Complementary To MMST4401 ● Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0 -500 nA V CE =-1V, I C =-100μA 30 V CE =-1V, I C =-1mA 60 V CE =-1V, I C =-10mA 100 V CE =-2V, I C =-150mA 100 300 DC current gain h FE V CE =-2V, I C =-500mA 20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF https://www.360docs.net/doc/c0164743.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

A44贴片三极管 SOT-89三极管封装A44参数

C ,Jun ,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MARKING: A44 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 400 V Collector-emitter breakdown voltage V (BR)CEO *I C =1mA,I B = 0 400 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =400V,I E = 0 0.1 μA Emitter cut-off current I EBO V EB =4V,I C =0 0.1 μA h FE(1)* V CE =10V, I C = 1mA 40 h FE(2)* V CE =10V, I C =10mA 50 200 h FE(3)* V CE =10V, I C =50mA 45 DC current gain h FE(4)* V CE =10V, I C =100mA 40 I C =1mA,I B =0.1mA 0.4 V I C =10mA,I B =1mA 0.5 V Collector-emitter saturation voltage V CE(sat)* I C =50mA,I B =5mA 0.75 V Base-emitter saturation voltage V BE(sat)* I C =10mA,I B =1mA 0.75 V Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 7 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%. I C Collector Current -Continuous 200mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance f rom Junction t o Ambient 250℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ I CM Collector Current -Pulsed 300 mA https://www.360docs.net/doc/c0164743.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

2SC2881贴片三极管 SOT-89封装三极管2SC2881参数

A,Nov,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E = 0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C =0 5 V Collector cut-off current I CBO V CB =120V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =0.5A 1 V Transition frequency f T V CE =5V,I C =100mA 120 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 30 pF CLASSIFICATION OF h FE RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V I C Collector Current 800 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.360docs.net/doc/c0164743.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

常用贴片三极管与直插三极管型号对应

1．直插贴片型号对应直插封装的型号贴片的型号9011 1t 9012 2t 9013 j3 9014 j6 9015 m6 9016 y6 9018 j8 s8050 j3y s8550 2ty 8050 y1 8550 y2 2sa1015 ba 2sc1815 hf 2sc945 cr mmbt3904 1am mmbt3906 2a mmbt2222 1p mmbt5401 2l mmbt5551 g1 mmbta42 1d mmbta92 2d bc807-16 5a bc807-25 5b bc807-40 5c bc817-16 6a bc817-25 6b bc817-40 6c bc846a 1a bc846b 1b bc847a 1e bc847b 1f bc847c 1g bc848a 1j bc848b 1k bc848c 1l bc856a 3a bc856b 3b bc857a 3e bc857b 3f bc858a 3j

bc858b 3k bc858c 3l 2sa733 cs un2111 v1 un2112 v2 un2113 v3 un2211 v4 un2212 v5 un2213 v6 2sc3356 r23 2sc3838 ad 2n7002 702 2．直插贴片及极性、频率直插封装的型号贴片的型号极性Ft VCEO Ic hfe 配对型号9011 1T NPN 150MHz 18V 100mA 28~132 9012 2T PNP 150MHz 25V 500mA 64~144 9013 9013 J3 NPN 9014 J6 NPN 150MHz 18V 100mA 60~400 9015 9015 M6 PNP 9016 Y6 NPN 500MHz 20V 25mA 28~97 9018 J8 NPN 700MHZ 12V 100mA 28~72 S8050 J3Y NPN 100MHz 25V 1.5A 45~300 S8550 S8550 2TY PNP 8050 Y1 NPN 100MHz 25V 1A 85~300 8550 8550 Y2 PNP 2SA1015 BA PNP 2SC1815 HF NPN 80MHz 50V 150mA 70~700 1015 2SC945 CR NPN 250MHz 50V 100mA 200~600 2SA733 CS MMBT3904 1AM NPN 300MHz 60V 100mA 300@10mA 3906 MMBT3906 2A PNP MMBT2222 1P NPN 250MHz 60V 600mA 100@150mA MMBT5401 2L PNP 100MHz 150V 500mA 40~200 5551 MMBT5551 G1 NPN MMBTA42 1D NPN 50MHz 300V 100mA 40@10mA MMBTA92 2D PNP BC807-16 5A PNP BC807-25 5B PNP 80MHz 45V 500mA 250@100mA BC817-25 BC807-40 5C PNP 80MHz 45V 500mA 250@100mA BC817-40 BC817-16 6A NPN BC817-25 6B NPN