一种二阶补偿的CMOS带隙基准电压源

周玮;吴贵能;李儒章

【期刊名称】《重庆邮电大学学报（自然科学版）》

【年(卷),期】2009(021)001

【摘要】提出了一种通过沟道长度调制效应进行二阶温度曲率补偿的CMOS带隙基准电压源,并分析了这种结构实现二阶温度曲率补偿成立的条件.采用0.35μm标准CMOS工艺库,在Cadence环境下进行仿真,在-50°～+120 ℃温度范围内,一阶曲率补偿的温度系数为9.5 ppm/℃,而运用二阶曲率补偿后该基准电压源具有2.7ppm/℃的低温度系数.%A novel proposed second-order compensated CMOS bandgap voltage reference (BGR) is presented. The second -order temperature curvature compensation is accomplished effectively by the channel modulation effect of the MOSFET, and the specific qualifications of the second-order temperature curvature compensation are analyzed and given. The Ca-dence simulation results based on standard CMOS 0.35 μm technology show that the temperature coefficient of the first-or-der compensated BGR is 9.5 ppm/℃ ,while the proposed second-order compensated BGR has 2.7 ppm/℃ low tempera-ture coefficient over the wide temperature range of -50°～+ 120℃.

【总页数】6页(78-82,86)

【关键词】带隙基准电压源;曲率补偿;二阶补偿;低温度系数

【作者】周玮;吴贵能;李儒章