JANSF2N7550T1中文资料

of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300KRads(Si)2 Units Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — -100
—
V
VGS(th) Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
IGSS IGSS
Gate-to-Source Leakage Forward — -100 — -100 nA Gate-to-Source Leakage Reverse — 100 — 100
— 6110 — — 1574 — pF
— 115 —
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS ISM VSD trr QRR
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — -45 A — — -180 — — -5.0 V — — 200 ns — — 1.6 µC
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Â
5 TECHNOLOGY
Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω
ID -45A -45A
QPL Part Number JANSR2N7550T1 JANSF2N7550T1
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25°C ID @ VGS = -12V, TC=100°C
IDM PD @ TC = 25°C
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V
VGS =-12V, ID = -45A VDS = -50V
— 35 — 100 ns — 100
VDD = -50V, ID = -45A VGS =-12V, RG = 1.2Ω
— 100
6.8 — nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in.
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Typ Max Units ——V -0.13 — V/°C
Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page

1
12/13/07
元器件交易网
IRHMS597160, JANSR2N7550T1
Features:
n Single Event Effect (SEE) Hardened n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Ratings n Dynamic dv/dt Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electically Isolated n Ceramic Eyelets n Light Weight n High Electrical Conductive Package
Low-Ohmic TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).The combination
Thermal Resistance
Parameter
RthJC RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
— — 0.6 — 0.21 — — — 48
°C/W
Test Conditions Typical socket mount
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
TJ TSTG
Operating Junction Storage Temperature Range Lead Temperature Weight
Pre-Irradiation
Units
-45
-28.5
A
-180
208
W
1.67
W/°C
±20
V
480
mJ
-45
A
20.8
mJ
-6.0
V/ns
-55 to 150 °C
PRraed-IirartaiodniaCtiohnaracteristics
IRHMS597160, JANSR2N7550T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct compa94283E
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160 JANSR2N7550T1