C3524中文资料

合集下载

SAMSUNG GT-C3520 手机 说明书

SAMSUNG GT-C3520 手机 说明书

正确保管和使用设备
保持设备干燥 • 湿气和各种液体可能损坏设备零件或电子线路。 • 设备潮湿时请勿开机。如果设备已开机,请立即将其关闭
并取下电池 (如果设备无法关机或无法取下电池,请维持 现状)。然后用毛巾擦干设备并将其送往服务中心。 • 请勿将设备弄湿,液体可能造成设备严重损坏,并使设备 内部的防水标签变色。不要湿手接触设备。水可能造成设 备损坏,制造商对此不予保修。
方使用设备。 • 切勿在放有设备、设备零件或配件的箱子中存放或携带
易燃液体、气体或易爆物品。
乘坐飞机时请关闭设备 在飞机上使用设备属于违法行为,设备可能会干扰飞机的 电子导航仪。
机动车的电子设备可能因设备的无线电频率而出现故障 汽车的电子设备可能因设备的无线电频率而出现故障,有 关详细信息,请联系制造商。
请勿在充满灰尘、肮脏的场所使用或存放设备 灰尘可能导致设备出现故障。
请勿将设备放在斜面上 如果设备滑落,则会被损坏。
请勿将设备存放在过热或过冷的地方。请在 -20℃ 至 50℃ 之间的范围内使用设备 • 如果将设备放在封闭的车辆内,由于车辆内部温度可高达
80℃,因此设备可能发生爆炸。 • 请勿将设备长时间暴露在阳光直射环境下,如放在汽车
GT-C3520
手机 使用说明书
/cn 中国印刷 GH68-35825A 中文 09/2011 版本 1.0
安全注意事项
* 本使用说明书中的一些内容可能与设备不同,取决于安 装的软件或服务提供商。
* 第三方服务可能在任何时间停止或中断,三星对任何内 容或服务可使用的时间段不负任何责任或担保。
在驾驶汽车、摩托车或自行车时,请勿使用耳机 • 否则可能造成严重的事故;在某些地区也可能受法律
禁止。 • 在马路上行走或跑步,或者过马路时使用耳机可能会造

FPGA可编程逻辑器件芯片XC7A35T-2CSG324I中文规格书

FPGA可编程逻辑器件芯片XC7A35T-2CSG324I中文规格书

Chapter2 Power Distribution SystemChapter 2:Power Distribution SystemTable 2-2 lists the PCB decoupling capacitor guidelines per V CC supply rail for Artix-7devices.CSGA324XC7S5001351111123124FTGB196XC7S5001351111113124FGGA484XC7S5001351111124124FGGA484XC7S7501471111137124FGGA676XC7S7501471111137124FGGA484XC7S10001581111137124FGGA676XC7S1001581111137124Notes:1.PCB capacitor specifications are listed in Table 2-5.2.Total includes all capacitors for all supplies. The values in this table account for the number of I/O banks in the device.3.One 47µF (or 100µF) capacitor is required for up to four V CCO banks when powered by the same voltage.4.Decoupling capacitors cover down to approximately 100KHz.PackageDeviceV CCINTV CCBRAMV CCAUXV CCO (per Bank)330µF 100µF 4.7µF 0.47µF 100µF 47µF 4.7µF 0.47µF 47µF 4.7µF 0.47µF47µF or100µF (3)4.7µF 0.47µFTable 2-2:Required PCB Capacitor Quantities per Device: Artix-7Devices (1)(2)PackageDeviceV CCINTV CCBRAM V CCAUXV CCO Bank 0V CCO all other Banks(per Bank)680µF 330µF 100µF 47µF 4.7µF 0.47µF 100µF 47µF 4.7µF 0.47µF 47µF 4.7µF 0.47µF 47µF47µF or100µF (3)4.7µF 0.47µFCPG238XC7A12T 00101201011121124CSG325XC7A12T 00101201011121124CPG236XC7A15TXA7A15T 0122111121124CPG238XC7A25T 00102301011121124CSG325XC7A25T 00102301011121124CPG236XC7A35T XA7A35T 0123111121124CPG236XC7A50T XA7A50T 01003510011121124FTG256XC7A15T 00102201011231124FTG256XC7A35T 00102301011231124FTG256XC7A50T 01003510011231124FTG256XC7A75T 01004610021231124FTG256XC7A100T 01006810021231124CSG324XC7A15T XA7A15T 0122111241124CSG324XC7A35T XA7A35T 00102301011241124CSG324XC7A50T XA7A50T01003510011241124FFG1930RF1930XC7VX980T XQ7VX980T 600110201010011FLG1930XC7VX1140T 600100211010011FLG1155XC7VH580T 300100111010011FLG1931XC7VH580T 300100111010011FLG1932XC7VH870T511161111Notes:1.PCB Capacitor specifications are listed in Table 2-5.2.Total includes all capacitors for all supplies, except for the MGT supplies MGTAVCC, MGTVCCAUX, and MGTAVTT, which are covered in UG476, 7 SeriesFPGAs GTX/GTH Transceivers User Guide . The values in this table account for the number of I/O banks in the device.3.See UG471, 7 Series FPGAs SelectIO Resources User Guide for a description of the VCCAUX_IO rail specification to see which I/O banks are grouped together ineach VCCAUX_IO group. See UG475, 7 Series FPGAs Packaging and Pinout Product Specification to see which I/O banks are grouped together in each VCCAUX_IO group.4.One 47µF (or 100µF) capacitor is required for up to four V CCO banks when powered by the same voltage.5.Decoupling capacitors cover down to approximately 100KHz.PackageDeviceV CCINT V CCBRAM V CCAUXV CCAUX_IO per Group (3)V CCO Bank 0V CCO all otherBanks (per Bank)680µF330µF 4.7µF 660µF 330µF 100µF 4.7µF 47µF 4.7µF 100µF 47µF 4.7µF 47µF 47µF or 100µF (4)Chapter 2:Power Distribution SystemTable 2-6 lists the capacitors present in the packages for Kintex-7devices.0.47µFC >0.47µF 06032-Terminal Ceramic X7R or X5R0.5nH1m Ω<ESR <20m Ω6.3VGRM188R70J474KA01Notes:1.Values can be larger than specified.2.Body size can be smaller than specified.3.ESR must be within the specified range.4.Voltage rating can be higher than specified.Table 2-5:PCB Capacitor Specifications (Continued)Ideal Value Value Range (1)Body Size (2)Type ESL Maximum ESR Range (3)Voltage Rating (4)Suggested Part Number Table 2-6:Package Capacitor Quantities per Device: Kintex-7Devices (1)Package DeviceV CCINT V CCAUX V CCAUX_IO per Group (2)V CCO per Bank (3)2.2μF 2.2μF 1.0μF 0.47μF FBG484FBV484XC7K70T 21N/A 1FBG484FBV484XC7K160T 21N/A 1FBG676FBV676XC7K70T 21N/A 1FBG676FBV676XC7K160T 21N/A 1FBG676FBV676XC7K325T 2111FBG676FBV676XC7K410T 2111FBG900FBV900XC7K325T 2111FBG900FBV900XC7K410T 2111FFG676FFV676XC7K160T XA7K160T 4211FFG676FFV676RF676XC7K325T XQ7K325T 4211FFG676FFV676RF676XC7K410T XQ7K410T4211。

SM3504资料

SM3504资料

A 7
B 8
C 9
÷ >
D
E
F
KEY : MAX. 85 - key
-2-
元器件交易网
SM3504
80 QFP (QFP080-P-1420)
0.15 64 (2.4) 41 0.8 TYP. 0.15 0.1 ± 0.1 Package base plane (16.98) M 0.15 ± 0.05
-1-
元器件交易网
SYSTEM COMFIGURATION EXAMPLE
Common signal
SM3504
Segment signal
S1-S60
H1-H8
Key matrix
S1-S6 S53-S60
KI2-KI7
(MAX. 84-key)
SM3504
XCR KI1 VCC TEST RESET XI XO BZ VCC ON key 3V VCC
65
40
±0.4
18.8
14.0
±0.2
80 (2.4)
25
1 (2.4) 20.0 24.8
± 0.2 ± 0.4
24 (2.4)
(22.98)
-3-
0.35 ± 0.1 1.3 ± 0.2 2.75 ± 0.2
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

T492C105M035CC4252中文资料

T492C105M035CC4252中文资料

C (0.01%/1000 hrs.)
B = Gold Plated C = Hot Solder Dipped H = Solder Plated K = Solder Fused
Capacitance Picofarad Code First two digits represent significant figures. Third digit specifies number of zeros to follow.
Max
6 Volt Rating at +85°C (4 Volt Rating at +125°C)
1.5
A T492A155(1)006(2)(3)(4) CWR11D(6)155(1)(2)(5)
0.5
6.0
8.0
2.2
A T492A225(1)006(2)(3)(4) CWR11D(6)225(1)(2)(5)
T492 SERIES—Style CWR11 Per Mil-PRF-55365/8
T492 (CWR11) RATINGS AND PART NUMBER REFERENCE
CaCpapaaccii-tatnanccee
μ␮FF
Case SCizasee
Size
KEMET PaKrtEMNEuTmber Part Number
Notes: 1. Metric dimensions govern 2. (Ref) Dimensions provided for reference only
* Mil-PRF-55365/8 Specified Dimensions
ORDERING INFORMATION — MIL-PRF-55365 Part Number

SN54HC354J资料

SN54HC354J资料

IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1998, Texas Instruments Incorporated。

2024版CAM350中文教程

2024版CAM350中文教程
详细阐述在CAM350中处理特殊工艺的步骤,包括识别特殊工 艺要求、设置相关参数、进行模拟验证等。
特殊工艺处理实例
通过具体案例展示如何在CAM350中处理特殊工艺,如盲埋孔 处理、阻抗控制、共面度调整等。
脚本编程自动化处理流程
脚本编程基础
CAM350脚本编程环境
简要介绍脚本编程的概念、作用和基本语法, 为后续学习打下基础。
详细介绍CAM350提供的脚本编程环境和工 具,包括脚本编辑器、调试工具等。
自动化处理流程实现
脚本编程高级应用
通过实例演示如何在CAM350中使用脚本编 程实现自动化处理流程,包括自动导入文件、 自动拼版、自动添加工艺边等。
分享一些脚本编程的高级应用技巧,如自定 义函数库、实现复杂算法、与外部程序交互 等。
布线原则
优先布置关键信号线, 避免平行走线,减少过 孔数量,注意线宽和间
距等。
DRC检查
在布局布线完成后,进 行设计规则检查
(DRC),确保设计符 合相关规范。
优化调整
根据DRC检查结果,对 布局布线进行优化调整,
提高电路板性能。
04
元器件库管理与使用技巧
元器件库概述及分类方法
元器件库定义
元器件库是CAM350中存储各种电 子元器件信息的数据库,方便用户 在PCB设计时快速调用。
设计规则
掌握电路板设计的基本规 则,如线宽、线距、孔径 等。
元器件封装
熟悉常用元器件的封装形 式和尺寸。CAM350中来自用文件格式Gerber文件
了解Gerber文件的格式和 编码方式,掌握如何导入 和解析Gerber文件。
Drill文件
熟悉Drill文件的格式和内 容,了解如何提取钻孔信 息。

LTC3525ESC6-5资料

LTC3525ESC6-5资料

33525faNote 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The LTC3525E is guaranteed to meet performance specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C operatingtemperature range are assured by design, characterization and correlation with statistical process controls.Note 3: Specifi cation is guaranteed by design and not 100% tested in production.(LTC3525-3.3)ELECTRICAL CHARACTERISTICSThe ● denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at T A = 25°C.V IN = 1.2V, V S H D N = 1.2V, V OUT = 3.3V unless otherwise noted.PARAMETER CONDITIONSMIN TYP MAX UNITSInput Start-Up Voltage 0.851V Output Voltage (Note 6)●3.203.30 3.40V Quiescent Current, V OUT S H D N = V IN (Note 4)715µA Quiescent Current, V INS H D N = V IN (Note 4)0.53µA Quiescent Current, V IN - Shutdown S H D N = 0V, V OUT = 0VNot Including Switch Leakage0.11µA NMOS Switch Leakage V IN = V OUT = V SW = 5V, SH D N = 0V 0.11µA PMOS Switch Leakage V IN = V SW = 5V, V OUT = 0V, S H D N = 0V 0.13µA NMOS Switch On Resistance (Note 3)0.5ΩPMOS Switch On Resistance (Note 3)0.8ΩPeak Current Limit 0.40.45A S H D N Threshold 0.40.61V S H D N Input CurrentV S H D N = V IN or V OUT 0.011µA(LTC3525-5)The ● denotes the specifications which apply over the full operating temperature range, otherwise specifi cations are at T A = 25°C.V IN = 2.4V, V S H D N = 2.4V, V OUT = 5V unless otherwise noted.PARAMETER CONDITIONS MIN TYP MAX UNITSInput Start-Up Voltage 0.851V Output Voltage (Note 6)●4.855.00 5.15V Quiescent Current, V OUT S H D N = V IN (Note 4)818µA Quiescent Current, V INS H D N = V IN (Note 4)1.55µA Quiescent Current, V IN - Shutdown S H D N = 0V, V OUT = 0VNot Including Switch Leakage 0.11µA NMOS Switch Leakage V IN = V OUT = V SW = 5V, S H D N = 0V 0.11µA PMOS Switch Leakage V IN = V SW = 5V, V OUT = 0V, S H D N = 0V 0.13µA NMOS Switch On Resistance (Note 3)0.4ΩPMOS Switch On Resistance (Note 3)0.7ΩPeak Current Limit 0.40.5AS H D N Threshold 0.40.61V S H D N Input CurrentV S H D N = V IN or V OUT 0.011µANote 4: Current Measurements are performed when the LTC3525 is not switching.Note 5: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specifi ed maximum operating junction temperature may impair device reliability.Note 6: Consult LTC Marketing for other output voltage options.50mV/DIVI OUT =80mAI OUT =40mA I OUT =5mA INPUT CURRENT 100mA/DIVV OUT 1V/DIV V IN = 1.2V63525fa3525 G22OUTPUT RIPPLE 50mV/DIV LOAD CURRENT 50mA/DIVV IN = 2.4V C OUT = 22µF 500µs/DIV3525 G23OUTPUT RIPPLE 50mV/DIVLOAD CURRENT 50mA/DIVV IN = 3.6V C OUT = 22µF500µs/DIV3525 G18I OUT =190mAI OUT =100mA I OUT =5mA50µs/DIVV IN = 2.4V C OUT = 22µF50mV/DIV3525 G19I OUT =150mAI OUT =50mA V IN = 2.4V C OUT = 22µFI OUT =5mA 50µs/DIV50mV/DIV 3525 G20I OUT =200mAI OUT =100mA V IN = 3.6V C OUT = 22µFI OUT =20mA 50µs/DIV50mV/DIV3525 G21OUTPUT RIPPLE 50mV/DIV LOAD CURRENT 20mA/DIVV IN = 1.2V C OUT = 22µF500µs/DIVLTC3525-3.3 Output Voltage RippleLTC3525-5 Output Voltage RippleLTC3525-5 Output Voltage RippleLTC3525-3.3 50mA Load Step ResponseLTC3525-3.3 100mA Load Step ResponseLTC3525-5 100mA Load Step ResponseT A = 25°C unless otherwise noted.TYPICAL PERFOR A CE CHARACTERISTICSU W3525 G17I OUT =80mAI OUT =40mA I OUT =5mA 50µs/DIVV IN = 1.2V C OUT = 22µF50mV/DIVLTC3525-3.3 Output Voltage RippleOPERATIOThe LTC3525 is a high performance Burst Mode operation only, synchronous boost converter requiring only three small external components. Its simplicity and small size make it a high effi ciency alternative to charge pump designs. It is designed to start up from a single alkaline or nickel cell, with input voltages as low as 1V, or from two or three cells (or a Li-ion battery), with voltages as high as 4.5V. Once started, V IN can be as low as 0.5V (depending on load current) and maintain regulation. The output voltage is preset internally to either 3V, 3.3V or 5V. Peak switch current is 400mA minimum, providing regulation with load currents up to 150mA, depending on input voltage. Synchronous rectifi cation provides high effi ciency opera-tion while eliminating the need for an external Schottky diode. True output disconnect eliminates inrush current at start-up, and allows V OUT to be disconnected from V IN, for zero shutdown current.The output disconnect feature also allows the LTC3525 to maintain regulation with an input voltage equal to or greater than V OUT. Note, however, that the synchronous rectifi er is not enabled in this mode resulting in lower ef-fi ciency and reduced output current capability.The operating quiescent current is only 7µA typical, allow-ing the converter to maintain high effi ciency at extremely light loads.ShutdownThe LTC3525 is shut down by pulling S H D N below 0.4V, and made active by raising it above 1V. Note that S H D N can be driven as high as 6V, however, if it is more than 0.9V above the higher of V IN or V OUT, the S H D N input current will increase from zero to 1.5µA.After the S H D N pin rises, there is a short delay before switching starts. The delay is 20µs to 120µs, depending on input voltage (see Typical Performance Characteristics curve).Start-upA start-up oscillator allows the LTC3525 to start with input voltages as low as 1V. It remains in start-up mode until two conditions are met. V OUT must exceed V IN by at least0.2V typical and either V IN or V OUT must be greater than1.8V typical.During startup, the synchronous rectifi er is not enabled, and the internal P-channel synchronous rectifi er acts as a follower, causing the peak voltage on SW to reach (V IN + 1V) typical. This limits inrush current by maintaining control of the inductor current when V OUT is less than V IN. To reduce power dissipation in the P-channel synchronous rectifi er when the output is shorted, a foldback feature is incorporated that reduces the peak inductor current when V IN is more than 1.7V greater than V OUT.Normal OperationOnce V OUT has increased more than 0.2V typical above V IN, and either voltage is above 1.8V, normal operation begins, with synchronous rectification enabled. In this mode, the internal N-channel MOSFET connected be-tween SW and GND stays on until the inductor current reaches a maximum peak value, after which it is turned off and the P-channel synchronous rectifi er is turned on. It stays on, delivering current to the output, until the inductor current has dropped below a minimum value at which point it turns off and the cycle repeats. When the output voltage reaches its regulated value both switches are turned off and the LTC3525 goes to sleep, during which time the output capacitor supplies current to the load. Once the output voltage drops approximately 9mV below the regulation value the IC leaves sleep mode and switching is resumed.The LTC3525 has been designed for low output voltage ripple. The output voltage ripple is typically only 20mV peak-to-peak at light load and 60mV peak-to-peak at83525fa93525faOPERATIOfull load using the minimum recommended 10µF output capacitor for the LTC3525-3.3 and a 22µF capacitor for the LTC3525-5 (due to the capacitor’s DC bias effect). An antiring circuit damps any oscillation at the switch node when the inductor current falls to zero.Power Adjust FeatureThe LTC3525 incorporates a feature that maximizes effi ciency at light load while providing increased power capability at heavy load by adjusting the peak and valley of the inductor current as a function of load. Lowering the peak inductor current to 150mA at light load optimizes effi ciency by reducing conduction losses in the internal MOSFET switches. As the load increases, the peak inductor current is automatically increased to a maximum of 400mA. At intermediate loads, the peak inductor current may vary from 150mA to 400mA. Figure 1 shows an example of how the inductor current changes as the load increases. Please note that output capacitor values greater than 47µF will result in higher peak currents than necessary at light load. This will lower the light load effi ciency.The valley of the inductor current is automatically adjustedas well, to maintain a relatively constant inductor ripplecurrent. This keeps the switching frequency relatively constant.The maximum average load current that can be supported is given by:I V V Amps O MAX IN O()=03.••ηWhere η is the effi ciency (see Typical Performance Char-acteristics).The “burst” frequency (how often the LTC3525 delivers a burst of current pulses to the load) is determined by the internal hysteresis (output voltage ripple), the load current and the amount of output capacitance. All Burst Mode operation or hysteretic converters will enter the audible frequency range when the load is light enough. However, due to the low peak inductor current at light load, circuits using the LTC3525 do not typically generate any audible noise.3525 F01INDUCTOR CURRENT 100mA/DIVLOAD CURRENT 50mA/DIV10µs/DIVFigure 1. Inductor Current Changing as a Function of LoadLTC3525-3/Information furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.LTC3525-3/LT 0306 REV A • PRINTED IN USA Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 ● FAX: (408) 434-0507 ● © LINEAR TECHNOLOGY CORPORA TION 2005。

IP1524B中文资料

IP1524B中文资料

LABREGULATING PULSE WIDTH MODULATORSFEATURES•Pin Compatible with IP1524 Series •7 to 40 volt operation•5 volt reference trimmed to ±1%•Undervoltage lockout•Excellent external sync capability•Wide current limit common mode range •+5 Volt error amplifier common mode •PWM data latch•Full double-pulse suppression logic •50ns shutdown function•Dual 200mA, 60V output transistors •Fully specified over temperature+V INInput Voltage Collector Voltage Logic InputsCurrent Limit Sense Inputs Oscillator Charging CurrentP D Power Dissipation T A = 25°CDerate @ T A > 50°C P D Power DissipationT C = 25°CDerate @ T C > 25°CT J Operating Junction Temperature T STG Storage Temperature Range T LLead Temperature(soldering, 10 seconds)+40V +60V –0.3 to +5.5V –0.3 to +V IN5mA 1W 10mW/°C 2W 16mW/°CSee Ordering Information–65 to +150°C+300°CABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)TOP VIEWJ Package – 16 Pin Ceramic DIP N Package – 16 Pin Plastic DIPD Package – 16 Pin Plastic (300) SOIC81234567141312111091516INV. INPUT N. I. INPUT OSC. OUTPUT +C.L. SENSE –C.L. SENSE R T C T GROUND V REF V IN E B C B C A E ASHUTDOWN COMPENSATIONPart J–Pack N–PackD–16Temp.Number 16 Pin 16 Pin 16 Pin Range IP1524B -55 to +125°C IP2524B -25 to +85°C IP3524B0 to +70°COrder InformationNote:To order, add the package identifier to the part number.eg.IP1524BJIP3524BD–16LABE C C.L.+C.L.SENSE –C.L.SENSEINV.INPUT N.I.INPUT T T67OSCILLATORR C 158REFERENCE REGULATORGNDUNDER VOLTAGE LOCKOUTTO INTERNAL CIRCUITRYOSC.DS QQ SQRQTQ1254COMPENSATIONSHUTDOWN910PWM LATCHMEMORYF/FTOGGLE F/FPWMERROR+V IN V REF163C E BBAA11121314+7 to +40V 0 to +60V +2.3 to V REF0 to V IN – 2.5V 0 to 200mA 0 to 20mA 25µA to 1.8mA 50Hz to 500kHz 2k Ωto 150k Ω1nF to 0.1µF –55 to +125°C –25 to +85°C 0 to +70°CRECOMMENDED OPERATING CONDITIONSDESCRIPTIONThe IP1524B is a pulse width modulator for switching power supplies which features improved performance over industry standards like the SG1524. A direct pin-for-pin replacement for the earlier device, it combines advanced processing techniques and circuit design to provide improved reference accuracy/ and extended common mode range at the error amplifier and current limit inputs. A DC-coupled flip-flop eliminates triggering and glitch problems, and a PWM data latch prevents edge oscillations. The circuit incorporates true digital shutdown for high speed response, while an undervoltage lockout circuit prevents spurious outputs when the supply voltage is too low for stable operation. Full double-pulse suppression logic insures alternating output pulses when the shutdown pin is used for pulse-by-pulse current limiting.BLOCK DIAGRAMV INInput Voltage Collector VoltageError Amp Common Mode RangeCurrent Limit Sense Common Mode Range Output Current(each transistor)Reference Load Current Oscillator Charging Current Oscillator Frequency RangeR T Oscillator Timing Resistor C TOscillator Timing CapacitorOperating Ambient Temperature RangeIP1524B IP2524B IP3524BNOTES1.Test Conditions unless otherwise stated:V IN = 20V , I REF = 0.T J = –55 to +125°C for IP1524B T J = –25 to +85°C for IP2524BT J = 0 to +70°Cfor IP3524B 2.R T = 2.7K Ω, C T = 0.01µF unless otherwise stated.LAB4.35.26.50.10.30.67104.90 5.005.104.855.151155254075257012013943470.1112801404007003.04.00.40.5 1.23.7 4.00.61 1.1-12101100.114.35.26.50.10.30.67104.955.005.054.905.10110515407525701201104143450.1112801404007003.0 4.00.40.5 1.23.7 4.00.61 1.1-10.15150.11IP1524B IP2524B IP3524BParameterTest Conditions1Min.Typ.Max.Min.Typ.Max.UnitsV IN Undervoltage Threshold Turn–on Hysteresis Operating CurrentOutput Voltage Line Regulation Load Regulation Temperature Stability Short Circuit Current Long Term StabilityInitial Accuracy Voltage Stability Temperature Stability Minimum Frequency Maximum Frequency Clock Amplitude Clock Pulse Width Sawtooth Peak Voltage Sawtooth Valley Voltage Sawtooth Valley T.C.Input Offset Voltage Input Bias Current Input Offset CurrentV IN Rising V IN = 7 to 40VT J = 25°C V IN = 7 to 40V I L = 0 to 20mAV IN = 7 to 40V I L = 0 to 20mAV REF = 0T J = 25°CT J = 25°C V IN = 7 to 40VR T = 150k ΩC T = 0.1µF R T = 2k ΩC T = 470pF Output, Pin 3C T = 0.01µF Output, Pin 3C T = 0.01µFC T = 0.01µF C T = 0.01µF T J = 25°C V CM = 2.3 to V REF V CM = 2.3 to V REF V CM = 2.3 to V REFV mAVmV mA mVkhrkHz %Hz kHz Vµs V mV/°CmV µAELECTRICAL CHARACTERISTICS (T J = Over Operating Temperature Range unless otherwise stated)ERROR AMP SECTIONOSCILLATOR SECTION2REFERENCE SECTIONTURN–ON CHARACTERISTICSIP1524B IP2524B IP3524BParameterTest Conditions1Min.Typ.Max.Min.Typ.Max.Units60757090761200.20.53.84.2124549180200220-1-102.00.110.6500.1200.20.41.0 2.2171916.5180.20.160757090761200.20.53.84.2124549180200220-1-102.00.110.6500.1200.20.41.0 2.2171916.5180.20.40.10.2DC Open Loop Gain Common Mode Rejection Supply Voltage Rejection Output Low Level Output High Level Gain Bandwidth Product Minimum Duty Cycle Maximum Duty CycleSense Voltage Input Bias CurrentHigh Input Voltage High Input Current Low Input Voltage Shutdown DelayCollector Leakage Current Collector Saturation Voltage Emitter Output Voltage Emitter Voltage Rise Time Collector Voltage Fall Time∆V O = 1 to 3V R L ≥10M ΩV CM = 2.3 to V REFV IN = 7 to 40V I SINK = 100µA I SOURCE = 100µA T J = 25°CV PIN1– V PIN2≥150mV V PIN2– V PIN1≥150mVV CM = 0 to 17.5V V IN = 7 to 40V V CM = 0 to 17.5V V IN = 7 to 40VV SHUTDOWN = 5VPin 10 to output T J = 25°CV CE = 60V I C = 20mA I C = 200mA I E = 50mA I E = 200mA R E = 2k ΩT J = 25°C R C = 2k ΩT J = 25°CdBV MHz%mV µAV mA V ns µA V V µsLABPWM COMPARATORERROR AMP SECTION (cont.)CURRENT LIMIT AMPLIFIERSHUTDOWN INPUTOUTPUT SECTION (each transistor)NOTES1.Test Conditions unless otherwise stated:V IN = 20V , I REF = 0.T J = –55 to +125°C for IP1524B T J = –25 to +85°C for IP2524BT J = 0 to +70°Cfor IP3524B ELECTRICAL CHARACTERISTICS (T J = Over Operating Temperature Range unless otherwise stated)LABAPPLICATIONS INFORMATION854OUTSENSE+C.L.–C.L.GND100ΩRAW SUPPLY RETURNRETURN+V R SENSEOUT+C.L.–C.L.RETURNRAW SUPPLYC C R +V 135412A B11+C.L.–C.L.E BE A1445SENSER 3163.2k ΩTTL3163.2k ΩCMOS1N9142N23691112+15VD1Q11.6k ΩTO LOAD1112Q14.7k Ω1.6k Ω0.01µFQ2TO LOADCurrent Sensing in the Ground LineSensing Primary Current with an Emitter ResistorDriving Power MOSFETsCurrent Sensing in the Output LineOscillator Sync to an External ClockA. TTL LogicB. 5 Volt CMOS LogicDriving Power Bipolar TransistorsLABTYPICAL PERFORMANCE CHARACTERISTICSOscillator Frequency vs. Timing ComponentsOutput Dead Time vs. Timing Capacitance ValuePulse Width ModulationTransfer Function Output Saturation VoltageLABTYPICAL PERFORMANCE CHARACTERISTICSError Amplifier Voltage Gainvs. Frequency Undervoltage Lockout Characteristics。

  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

C3520 & C3524
35A AVALANCHE AUTOMOTIVE CELL DIODE
Maximum Ratings and Electrical Characteristics@T A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
C3520
C3524
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM
V RWM
V R
16 20
V
Average Rectified Output Current @T C = 150°C I O 35
A
Breakdown Voltage Min. @I R = 100mA Breakdown Voltage Max. @I R = 100mA V BR
20
26
24
32
V
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I FSM 400 A Forward Voltage @I F = 80A V FM 1.08 V
Peak Reverse Current
At Rated DC Blocking Voltage @T A = 25°C I RM 200
nA
Typical Thermal Resistance Junction to Ambient RθJA 1.4
°C/W Operating and Storage Temperature Range T J, T STG-40 to +150 °C WTE
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
C3520 6.2mm Cell Diode 5000 Units/Bottle C3524
6.2mm Cell Diode
5000 Units/Bottle
1. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.
2.
To order Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, C3520-LF.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417
Email: sales@
Internet: 。

相关文档
最新文档