AO3407A替代型号DMG3407SSN

e3P-CHANNEL ENHANCEMENT MODE MOSFETFeatures and Benefits∙Low On-Resistance ∙ Low Input Capacitance ∙ Fast Switching Speed∙ Low Input/Output Leakage∙ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3) ∙Qualified to AEC-Q101 Standards for High ReliabilityDescription and ApplicationsThis MOSFET has been designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.∙ Load Switch∙ DC-DC Converters∙Power Management FunctionsMechanical Data∙ Case: SC59∙ Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ∙ Moisture Sensitivity: Level 1 per J-STD-020∙ Terminals: Finish −Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ∙ Terminal Connections: See Diagram ∙Weight: 0.014 grams (Approximate)SC59Top ViewInternal SchematicPin Configuration(Note 4)Notes:1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.html fo r more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /products/packages.html.Marking InformationG32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017)M = Month (ex: 9 = September)G32Y MMaximum Ratings (@T A = +25°C, unless otherwise specified.)(@T= +25°C, unless otherwise specified.)Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P D is based on t<10s RθJA.6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. copper, single sided. The power dissipation P D is based on t<10s RθJA.7. Short duration pulse test used to minimize self-heating effect.8. Guaranteed by design. Not subject to production testing.V GS = -4.5VV GS = -4.0VV GS = -3.5VV GS = -3.0VV GS = -2.5VV GS = -2.0VV DS = -5.0VT A = 150︒C A = 125︒CT = 25︒C T A = -55︒CV GS = -4.5V A = 150︒CT A T A = 125︒C= 85︒CA = 25︒CT A = -55︒CR D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)-I D , D R A I N C U R R E N T (A )2016 128412 3 45-V DS , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output CharacteristicsGS , GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer Characteristics-I D , DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage-I D , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and TemperatureT J , JUNCTION TEMPERATURE (︒C)Fig. 5 On-Resistance Variation with TemperatureT J , JUNCTION TEMPERATURE (︒C)Fig. 6 On-Resistance Variation with TemperatureV GS = -4.5V I D = -5AV GS= -10V I D = -10AR D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (N o r m a l i z e d )R D S (O N ),D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)-I D , D R A I N C U R R E N T (A )R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)A)n(TNERRUCEGAKAEL, SSD-I(癈)T A =150°C5°CT A= 25°CT A =8W=100μs=10sDCo-IS,SOURCECURRENT(A)108642T A, AMBIENT TEMPERATURE ( C)Fig. 7 Gate Threshold Variation vs. Ambient Temperature-V SD, SOURCE-DRAIN VOLTAGE (V)Fig. 8 Diode Forward Voltage vs. Current1,000100-V DS, DRAIN-SOURCE VOLTAGE (V)-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage1001010.1Q g, TOTAL GATE CHARGE (nC)Fig. 11 Gate-Charge Characteristics0.010.1 1 10 100V DS, DRAIN-SOURCE VOLTAGE (V)Fig.12 SOA, Safe Operation AreaC issC ossC rssf = 1M Hz-VGS(TH),GATETHRESHOLDVOLTAGE(V)CT,JUNCTIONCAPACITANCE(pF)-VGS,GATE-SOURCEVOLTAGE(V)-IDSS,LEAKAGECURRENT(nA)ID,DRAINCURRENT(A)400350300 250 200 150 100 500 0.000010.00010.0010.01 0.1 1 10 1001000t1, PULSE DURATION TIME (sec)Fig. 13 Single Pulse Maximum Power Dissipation10.10.010.0010.000010.00010.0010.01 0.1 1 10 1001000t1, PULSE DURATION TIME (sec)Fig. 14 Transient Thermal Resistancer (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EP (P K ), P E A K T R A N S I E N T P O W E R (W )Package Outline DimensionsPlease see /package-outlines.html for the latest version.SC59Suggested Pad LayoutPlease see /package-outlines.html for the latest version.SC59。