MGY30N60D中文资料

C
IGBT & DIODE IN TO–264 30 A @ 90°C 50 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED
G G E C E
CASE 340G–02, Style 5 TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
元器件交易网NDUCTOR TECHNICAL DATA
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™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Power MOSFET Transistor Device Data
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元器件交易网 MGY30N60D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 30 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–On Switching Loss Total Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–On Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 15 Adc) (IEC = 15 Adc, TJ = 125°C) (IEC = 30 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. VFEC — — — 1.30 1.10 1.45 1.80 — 2.05 (continued) Vdc (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 125°C) Energy losses include “tail” (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 25°C) Energy losses include “tail” td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 — — — — — — — — — — — — — — — — — 76 80 348 188 0.98 2.00 2.98 73 95 394 418 1.90 3.10 5.00 150 30 45 — — — — 1.28 — — — — — — — — — — — — nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres — — — 4280 225 19 — — — pF VCE(on) — — — VGE(th) 4.0 — gfe — 6.0 10 15 8.0 — — 2.20 2.10 2.60 2.90 — 3.45 Vdc mV/°C Mhos Vdc BVCES 600 — ICES — — IGES — — — — 100 2500 250 nAdc — 870 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit
Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RθJC RθJC RθJA TL
Value 600 600 ±20 50 30 100 202 1.61 – 55 to 150 10 0.62 1.41 35 260 10 lbfSin (1.13 NSm)
Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature.
Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C
ms
°C/W
°C
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola TMOS Motorola, Inc. 1995
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Motorola TMOS Power MOSFET Transistor Device Data
元器件交易网
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic DIODE CHARACTERISTICS — continued Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE — 13 trr ta tb QRR trr ta tb QRR — — — — — — — — 153 82 71 2.3 208 117 91 3.8 Symbol Min Typ
Designer's
MGY30N60D