FZT689中文资料

FZT689B
TYPICAL CHARACTERISTICS
IC/IB=200 0.8 IC/IB=10 IC/IB=100 Tamb=25°C 0.8
-55°C +25°C +100°C +175°C
IC/IB=100
- (Volts)
0.6- (VoΒιβλιοθήκη ts) V0.60.4
0.4
V
0.2
0.2
0 0.01 0.1 1 10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
MAX. UNIT CONDITIONS. V V V
µA µA
IC=100µ A IC=10mA* IE=100µ A VCB=16V VEB=4V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=0.1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA,IB1=50mA IB2=50mA, VCC=10V
V V V V V
Base-EmitterSaturationVoltage VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE fT Cibo Cobo ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 219
元器件交易网
- Normalised Gain
-55°C +25°C +100°C +175°C
IC/IB=100
1K
500
- Typical Gain
V h
0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10
h
0
I+ - Collector Current (Amps)
- (Volts)
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55°C +25°C +100°C +175°C
10
VCE=2V
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
1
DC 1s 100ms 10ms 1ms 100µs
0 0.01 0.1 1 10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
+100°C +25°C -55°C
VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6
0.1
V
0
0.01
0.1
1
10
0.01 0.1
1
10
100
I+ - Collector Current (Amps) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 220
FZT689B
C
E C B VALUE 20 20 5 8 3 2 -55 to +150 UNIT V V V A A W °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. 20 20 5 0.1 0.1 0.10 0.50 0.45 0.9 0.9 500 400 150 150 200 16 30 800 MHz pF pF ns ns TYP.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B