LSYT676-Q+Q中文资料

合集下载

MEMORY存储芯片XQ7Z045-1RFG676Q中文规格书

The Defense-grade Zynq®-7000Q family is based on the Xilinx SoC architecture. These products integrate a feature-rich dual-core ARM® Cortex™-A9 based processing system (PS) and 28 nm Xilinx programmable logic (PL) in a single device for extreme environment applications such as Aerospace and Defense. The ARM Cortex-A9 CPUs are the heart of the PS and also include on-chip memory, external memory interfaces, and a rich set of peripheral connectivity interfaces.
Caches
• 32 KB Level 1 4-way set-associative instruction and data caches (independent for each CPU)
• 512 KB 8-way set-associative Level 2 cache (shared between the CPUs)
• Byte-parity support
On-Chip Memory
• On-chip boot ROM • 256 KB on-chip RAM (OCM) • Byte-parity support
External Memory Interfaces

唯特利（Victaulic）W07型AGS

如需产品安装、维护或支持信息，请参考本文档末的信息。

1.0 产品描述供货尺寸：• 1 – 12"/DN25 – DN300• 14 – 24"/DN350 – DN600 的尺寸，请参考 20.02 号技术文件: Victaulic （唯特利）W07 型 AGS ™ 刚性卡箍最大工作压力：• 支持的压力额定值从真空（29.9 in Hg/760 mm Hg ）到750 psi/5171 kPa/52 Bar • 工作压力视管道材料、壁厚和尺寸而定应用：• 连接 Victaulic （唯特利）原始沟槽系统(OGS)辊槽管和切槽管、阀门、管件及配件• 提供刚性管道连接，可限制轴向或角向移动。

如需抗扭强度的相关信息，请与 Victaulic （唯特利）联系。

管道材料：• 碳钢• 关于不锈钢管的用途，请参考17.09 号技术文件：用于不锈钢管道的 Victaulic （唯特利）沟槽卡箍性能数据。

• 有关例外情况，请参阅第 6.0 节“通知”管道制备• 切槽或辊槽，依照25.01号技术文件：Victaulic （唯特利）标准沟槽规格规范要求：• 支撑和悬挂要求符合 ASME B31.1 电力管道规范和 ASME B31.9 建筑服务管道规范和 NFPA 13 喷淋系统要求2.0 认证/列名EN 10311CPR (EU)No. 305/2011BS EN 10311CPR (UK)2019 No. 465注• 如需消防认证/列名参考指南，请下载10.01号技术文件。

•有关适用的饮用水认证，请参见02.06号技术文件：Victaulic （唯特利）饮用水认证 ANSI/NSF 。

Victaulic ®（唯特利™）Zero-Flex ™刚性卡箍07 型06.02-CHI3.0 规格 – 材料壳体：符合 ASTM 之 65-45-12 等级要求的球墨铸铁。

根据特殊要求，可提供符合 ASTM A395 之 65-45-15 等级要求的球墨铸铁。

FPGA可编程逻辑器件芯片XC7Z030-1FFG676C中文规格书

Serial Transceiver Channels by Device/PackageTable 1-3 lists the quantity of GTX serial transceiver channels for most of the Zynq-7000SoC devices. In all devices, a serial transceiver channel is one set of MGTRXP, MGTRXN, MGTTXP, and MGTTXN pins. The XC7Z012S and XC7Z015, in the CLG485 package, have four GTP serial transceiver channels.Table 1-4 shows the number of available SelectIO resources (SIO), the number of differential SIO pairs, and the number of available PS I/Os for each Zynq-7000SoC device/package combination. When applicable, it also lists the number of SIOs in the 3.3V-capablehigh-range (HR) banks and the number of 1.8V-capable high-performance (HP) banks.Vivado Design Suite report_ssn tool. See the Simultaneous Switching Outputs section of the 7Series FPGAs SelectIO Resources User Guide (UG471) [Ref 8] for more information.Table 1-3:Serial Transceiver Channels by Device/PackageDeviceGTX (or GTP) Channels by PackageCL/CLG225CL/CLG400CL/CLG484CL/CLG485FB/FBG/FBV484SBG/SBV485RB484FB/FBG/FBV676FF/FFG/FFV676RF/RFG676FF/FFG/FFV900RF900FF/FFG/FFV1156RF1156XC7Z007S ––––––XC7Z010XA7Z010––––––XC7Z012S – 4 (GTP)––––XC7Z015– 4 (GTP)––––XC7Z014S ––––––XC7Z020XA7Z020––––––XC7Z030––44––XA7Z030––4–––XC7Z035–––816–XC7Z045–––816–XC7Z100––––1616XQ7Z020––––––XQ7Z030––44––XQ7Z045–––816–XQ7Z100––––1616Table 1-4:Available SIO and PS I/O Pins by Device/Package CombinationDevice I/O PinsCL225CLG225CL400CLG400CL484CLG484CLG485FB484FBG484FBV484RB484SBG485SBV485FB676FBG676FBV676FF676FFG676FFV676RF676RFG676FF900FFG900FFV900RF900FF1156FFG1156FFV1156RF1156SIO PSI/OSIO PSI/OSIO PSI/OSIO PSI/OSIO PSI/OSIO PSI/OSIO PSI/OSIO PSI/O HR HP HR HP HR HP HR HP HR HP HR HP HR HP HR HPXC7Z007S User I/O540861000128––––––––––––––––––Differential270–480–––––––––––––––––––XC7Z010 XA7Z010User I/O540861000128––––––––––––––––––Differential270–480–––––––––––––––––––XC7Z012S User I/O––––––1500128–––––––––––––––Differential––––––720––––––––––––––––XC7Z015User I/O––––––1500128–––––––––––––––Differential––––––720––––––––––––––––XC7Z014S User I/O–––12501282000128–––––––––––––––Differential–––600–960––––––––––––––––XC7Z020 XA7Z020User I/O–––12501282000128–––––––––––––––Differential–––600–960––––––––––––––––XC7Z030User I/O–––––––––1006312850100128100150128––––––Differential–––––––––4829–2448–4872–––––––XA7Z030User I/O–––––––––10063128––––––––––––Differential–––––––––4829–––––––––––––XC7Z035User I/O–––––––––––––––100150128212150128–––Differential–––––––––––––––4872–10272––––XC7Z045User I/O–––––––––––––––100150128212150128–––Differential–––––––––––––––4872–10272––––XC7Z100User I/O––––––––––––––––––212150128250150128 Differential––––––––––––––––––10272–12072–XQ7Z020User I/O–––12501282000128–––––––––––––––Differential–––600–960––––––––––––––––XQ7Z030User I/O–––––––––10063128–––100150128––––––Differential–––––––––4829––––4872–––––––XQ7Z045User I/O–––––––––––––––100150128212150128–––Differential–––––––––––––––4872–10272––––XQ7Z100User I/O––––––––––––––––––212150128250150128 Differential––––––––––––––––––10272–12072–VRN(8)Multi-function N/A This pin is for the DCI voltage reference resistor of N transistor (per bank, to be pulled High with reference resistor).VRP(8)Multi-function N/A This pin is for the DCI voltage reference resistor of P transistor (per bank, to be pulled Low with reference resistor).DXP_0, DXN_0(9)Dedicated N/A Temperature-sensing diode pins (Anode: DXP; Cathode: DXN). The thermal diode is accessed by using the DXP and DXN pins in bank 0. When not used, tie to GND.To use the thermal diode an appropriate external thermal monitoring IC must be added.The recommended temperature monitoring solution for Zynq-7000SoC devices uses the temperature sensor in the XADC block.T0, T1, T2, or T3Multi-function N/A This pin belongs to the memory byte group 0-3.T0_DQS, T1_DQS,T2_DQS, or T3_DQS Multi-function Bidirectional The DDR DQS strobe pin that belongs to the memory byte group T0–T3.Table 1-5:Zynq-7000SoC Pin Definitions (Cont’d)Pin Name Type Direction DescriptionPackage Pin Compatible DevicesCL225/CLG2257Z007S7Z010CL400/CLG4007Z007S7Z0107Z014S7Z020CL484/CLG4847Z014S7Z020SB/SBG/SBV485 or7Z012S7Z0157Z030CL/CLG485FB/FBG/FBV484 or RB4847Z030FB/FBG/FBV676 or7Z0307Z0357Z045 FF/FFG/FFV676 or RF/RFG676FF/FFG/FFV900 or RF9007Z0357Z0457Z100FF/FFG/FFV1156 or RF11567Z100。

LSYA676中文资料

Hyper Multi SIDELED ®Hyper-Bright LEDLSY A676Besondere Merkmaleq Gehäusefarbe: weißq als optischer Indikator einsetzbarq zur Hintergrundbeleuchtung, Lichtleiter- und Linsenein-kopplungq hohe Signalwirkung durch Farbwechsel der LED möglich q bei geeigneter Ansteuerung, Farbwechsel von grün über gelb und orange bis super-rot möglichq für alle SMT-Bestück- und Löttechniken geeignet qgegurtet (12-mm-Filmgurt)Featuresq color of package: white q for use as optical indicatorq for backlighting, optical coupling into light pipes and lenses q high signal efficiency possible by color change of the LED qwith appropriate controlling it is possible to change color from green to yellow and orange to super-redq suitable for all SMT assembly and soldering methods q available taped on reel (12 mm tape)TypTypeEmissions-farbe Color of EmissionFarbe der Lichtaus-trittsfläche Color of the Light Emitting Area Lichtstärke Luminous Intensity I F = 20 mA I V (mcd)BestellnummerOrdering Codesuper-red yellow LSY A676LSY A676-P+P LSY A676-P+Q LSY A676-P+R LSY A676-Q+Q LSY A676-Q+Rsuper-red /yellowcolorless clear≥ 4040...8040...8040...8063...12563 (125)≥ 4040...8063...125100...20063...125100 (200)Q62703-Q3374v p l 06880Grenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitS YBetriebstemperatur Operating temperature range Top– 55 ... + 100˚CLagertemperaturStorage temperature range Tstg– 55 ... + 100˚CSperrschichttemperatur Junction temperature Tj+ 100˚CDurchlaßstrom Forward current IF3020mAStoßstromSurge currentt≤10µs,D = 0.005IFMto be defined AVerlustleistung Power dissipation Ptot8055mWWärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / airMontage auf PC-Board* (Padgröße≥ 16 mm 2) mounted on PC board* (pad size≥ 16 mm 2)Rth JA530K/W*PC-board: FR4NotesDie angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen.The stated maximum ratings refer to the specified chip, regardless of the other one’s operating status.Kennwerte (T A = 25 ˚C)Characteristics Bezeichnung ParameterSymbol SymbolWert ValueEin-heit Unit SY Wellenlänge des emittierten Lichtes (typ.)Wavelength at peak emission (typ.)I F = 10 mAλpeak 645591nmDominantwellenlänge (typ.)Dominant wavelength (typ.)I F = 10 mAλdom 632587nmSpektrale Bandbreite bei 50 %I rel max (typ.)Spectral bandwidth at 50 %I rel max (typ.)I F = 10 mA∆λ1615nmAbstrahlwinkel bei 50 %I V (Vollwinkel)Viewing angle at 50 %I V2ϕ120120Grad deg.Durchlaßspannung (typ.)Forward voltage (max.)I F = 20 mAV F V F 2.02.6 2.02.6V V Temperaturkoeffizient von λdom (I F = 20 mA)Temperature coefficient of λdom (I F = 20 mA)TC λ0.0140.096nm/K Temperaturkoeffizient von λpeak ,I F = 20 mA(typ.)Temperature coefficient of λpeak ,I F = 20 mA(typ.)TC λ0.140.13nm/KTemperaturkoeffizient von V F ,I F = 20 mA(typ.)Temperature coefficient of V F ,I F = 20 mA(typ.)TC V – 1.95–2.51mV/KRelative spektrale Emission I rel=f (λ),T A = 25 ˚C,I F= 10 mA Relative spectral emissionV (λ) =spektrale AugenempfindlichkeitStandard eye response curveAbstrahlcharakteristik I rel=f (ϕ)Radiation characteristicDurchlaßstrom I F =f (V F )Forward current T A = 25 ˚CRelative Lichtstärke I V /I V(20 mA) =f (I F )Relative luminous intensity T A= 25 ˚C Maximal zulässiger Durchlaßstrom I F =f (T A )Max. permissible forward currentRelative Lichtstärke I V /I V(25 ˚C)=f (T A )Relative luminous intensity I F= 10 mAMaßzeichnung (Maße in mm, wenn nicht anders angegeben)Package Outlines (Dimensions in mm, unless otherwise specified)G P L 06950L SYA676LEDEmission color 1Emission color 2PackageCathode: pin 1Cathode: pin 2。

CSC2001资料

Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP EPITAXIAL PLANAR SILICON TRANSISTORCSA952(9AW)TO-92BCEMARKING : AS BELOWAudio Frequency Power plementary CSC2001ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUEUNIT Collector -Base VoltageBVCBO 30V Collector Emitter VoltageBVCEO 25V Emitter Base VoltageBVEBO 5.0V Collector Current (DC)IC 700mA Collector Current (Peak)ICP** 1.0A Collector Power DissipationPtot 600mW Operating And Storage JunctionTj, Tstg -55 to +150deg CTemperature Range**PW=10ms, duty cycle=50%ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)DESCRIPTION SYMBOL TEST CONDITION MINTYP MAX UNIT Collector Cut off CurrentICBO VCB=30V, IE=0--100nA ICEO VCE=25V, IB=0-- 1.0uA Emitter Cut off CurrentIEBO VEB=5V, IC=0--100nADC Current GainhFE (1)VCE=1V, IC=100mA*90-400hFE (2)VCE=1V, IC=700mA*50--Base Emitter VoltageVBE(on)IC=10mA, VCE=6V*0.6-0.7V Collector Emitter Saturation Voltage VCE(Sat) IC=700mA,IB=70mA*--0.6V Base Emitter Saturation VoltageVBE(Sat)IC=700mA, IB=70mA*-- 1.2V Dynamic CharacteristicsTransition Frequencyft VCE=6V, IC=10mA,50--MHz Collector Output CapacitanceCob VCB=6V, IE=0--40pFf=1MHzhFE(1) Classification : M : 90-180; L : 135-270; K : 200-400Marking CSA CSA CSA952952952M L K*PW=350us, duty cycle=2% pulsedIS/ISO 9002Lic# QSC/L- 000019.2IS / IECQC 700000IS / IECQC 750100TO-92 Transistors on Tape and Ammo PackTO-92 Plastic PackageTO-92 Bulk TO-92 T&A1K/polybag 2K/ammo box200 gm/1K pcs 645 gm/2K pcs3" x 7.5" x 7.5"12.5" x 8" x 1.8"5.0K 2.0K17" x 15" x 13.5"17" x 15" x 13.5"80.0K 32.0K23 kgs 12.5 kgsPACKAGENet Weight/Qty DetailsSTANDARD PACKINNER CARTON BOXQty OUTER CARTON BOXQty Gr Wt SizeSizePacking Detail1. M AX IM UM A LIG NM E NT D EV IATIO N B ETW EEN LE ADS NOT TO B E G RE ATER TH AN 0.2 m m.2. M AX IM UM NO N-CU M ULATIV E VAR IATIO N BETW EE N TAP E FE ED HO LE S SH ALL NO T EX CE ED 1 m m IN 20 PIT CH ES.3. H OLD D OW N TAP E NO T TO E XC EE D B EY OND T HE ED G E(S) O F CA RR IER TA PE AND T HE RE S H ALL BE NO EX PO SU R E O F AD H ESIV E.4. NO M O R E TH AN 3 C ONSE CU TIV E M ISS ING C O M PO NE NT S AR E PER M ITTE D.5. A TA PE TR A ILE R, H AVING AT LEA ST TH R EE F EED H OLE S A RE RE QU IR ED AFTE R T HE LAST CO M PO NENT.6. SP LICE S S HA LL NO T INTE RFE RE W ITH TH E SP R OC KE T FEE D H OLE S.A l l d i m i n s i o n s i n m m .DIM MIN.MAX.A 4.32 5.33B 4.45 5.20C 3.18 4.19D 0.410.55E 0.350.50F 5 DEG G 1.14 1.40H 1.14 1.53K12.70—PIN CONFIGURATION 1. BASE2. COLLECTOR3. EMITTERNotesDisclaimerThe product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Discrete Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290e-mail sales@ 。

数域上整体类域论的应用-推荐下载

我们也可以试验一下整环中的运算.
>m:=Z_K![1,2,3]; >n:=Z_K![2,3,4]; >[m+n, m*n]; [[3,5,7],[87,19,40]]
大家可以自行验证这个计算结果的正确性.
现在我们来考虑K上的代数扩张. 比如我们来对K坐分圆扩张.
>E<z>:=NumberField(Polynomial(K,CyclotomicPolynomial(3))); >E; E:Maximal; E<z> | | K | | Q E : $.1^2 + $.1 + 1 4 K : t^3 - 25E : $.1^2 + $.1 + 1
整体类域论提供了代数数域的有限abelian扩张的一种描述. 我们用Magma将这个过程完整描述出来, 给学习和使用类域论的读者提供参扩张.
让我们首先来建立一个代数数域. 一个代数数域是一个有理数域的有限扩张, 因此我们首先定义有理数域. >Q:=Rational(); 其次, 一个代数数域需要有一个多项式不可约来定义, 因此我们先定义多项式环. >Qt<t>:=PolynomialRing(Q); 现在我们来定义代数数域Q(25^(1/3)). >K<a>:=NumberField(t^3-25); 这样K<a>就是我们要建立的代数数域了.
> Norm(z+a, E); z+a
由于此时Z_K不是主理想整环，所以我们Z_E并不是一个自由Z_K模。所以我们类似定义Z_E 在Z_K上面的整基是很困难的。Magma的方法主要是返回到Q的扩张上看。
> E_Q := AbsoluteField(E); > E_Q:Maximal; 5 E_Q | | Q E_Q : t^6 + 3*t^5 + 6*t^4 - 43*t^3 - 69*t^2 + 78*t + 676 > Z_E_Q := MaximalOrder(E_Q); > Z_E ! Z_E_Q.3; [[0, 0, 1], [0, 0, 0]] > E_Q ! $1; 1/4680*(-25*E_Q.1^5 - 62*E_Q.1^4 - 124*E_Q.1^3 + 1439*E_Q.1^2 + 1426*E_Q.1 - 1612)

LAT676中文资料

Bezeichnung Parameter
Symbol Symbol
Werte Values
Einheit Unit
LS LA LO LY
Wellenlänge des emittierten Lichtes Wavelength at peak emission
IF = 20 mA
(typ.) λpeak
Maßzeichnung
(Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
Kathodenkennung: abgeschrägte Ecke
16 16 16 15 nm
120 120 120 120 Grad deg.
2.0 2.0 2.0 2.0 V 2.6 2.6 2.6 2.6 V 0.01 0.01 0.01 0.01 µA 10 10 10 10 µA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K
(typ.)
Dominantwellenlänge Dominant wavelength
IF = 20 mA
(typ.) λdom
(typ.)
Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA
Top Tstg Tj IF IFM
VR Ptot
Rth JA
Werte Values LS, LA, LO LY – 55 ... + 100

LGT672-P1Q1-1中文资料

LG T672, LP T672Super TOPLED ®High-Current LED Abgek ündigt nach PD_078_02 - werden durch LG_LP T676 ersetzt werdenObsolete acc. to PD_078_02 - will be replaced by LG_LP T6762003-09-041Besondere Merkmale•Geh äusetyp: wei ßes P-LCC-2 Geh äuse, farbloser klarer Verguss•Besonderheit des Bauteils: extrem breite Abstrahlcharakteristik, ideal f ürHinterleuchtungen und Einkopplungen in Lichtleiter; h öherer zul ässiger Betriebsstrom •Wellenl änge: 570 nm (gr ün), 560nm (pure green)•Abstrahlwinkel: Lambertscher Strahler (120°)•Technologie: GaAsP (gr ün), GaP (pure green)•optischer Wirkungsgrad: 1,5lm/W (gr ün), 0,6lm/W (pure green)•Gruppierungsparameter: Lichtst ärke •Verarbeitungsmethode: f ür alle SMT-Best ücktechniken geeignet •L ötmethode: IR Reflow L öten und Wellenl öten (TTW)•Vorbehandlung: nach JEDEC Level 2•Gurtung: 8-mm Gurt mit 2000/Rolle, ø180 mm oder 8000/Rolle, ø330 mm Anwendungen•optischer Indikator•Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays)•Innenbeleuchtung im Automobilbereich (z.B.Instrumentenbeleuchtung u. ä.)Features•package: white P-LCC-2 package, colorless clear•feature of the device: extremely wide viewing angle, ideal for backlighting and coupling in light guides; higher permissible current •wavelength: 570nm (green), 560nm (pure green)•viewing angle: Lambertian Emitter (120°)•technology: GaAsP (green), GaP (pure green)•optical efficiency: 1.5lm/W (green), 0.6lm/W (pure green)•grouping parameter: luminous intensity •assembly methods: suitable for all SMT assembly methods•soldering methods: IR reflow soldering and TTW soldering•preconditioning: acc. to JEDEC Level 2•taping: 8mm tape with 2000/reel, ø180 mm or 8000/reel, ø330 mmApplications•optical indicators•backlighting (LCD, cellular phones, switches, keys, displays)•interior automotive lighting (e.g. dashboard backlighting)2003-09-042s Abgek ündigt nach PD_078_02 - werden durch LG_LP T676 ersetzt werden Obsolete acc. to PD_078_02 - will be replaced by LG_LP T676Letzte Bestellung / Last Order: 30.09.2003Letzte Lieferung / Last Delivery: 31.03.2004Anm.:-1 gesamter Farbbereich (siehe Seite 4)Die Standardlieferform von Serientypen beinhaltet eine untere bzw. obere Familiengruppe. Diese besteht aus 3bzw.4Helligkeitshalbgruppen. Einzelne Helligkeitshalbgruppen sind nicht bestellbar.In einer Verpackungseinheit /Gurt ist immer nur eine Helligkeitshalbgruppe enthalten.Note:-1 Total color tolerance range (see page 4)The standard shipping format for serial types includes a lower or upper family group of 3or 4individual luminous intensity half groups. Individual luminous intensity half groups cannot be ordered.No packing unit /tape ever contains more than one luminous intensity half group.TypTypeEmissions-farbe Color of EmissionLichtst ärkeLuminous Intensity I F = 50mA I V (mcd)LichtstromLuminous Flux I F = 50mA ΦV (mlm)BestellnummerOrdering Codes LG T672-P1Q1-1s LG T672-Q1R2-1green 45.0 ...90.071.0 ...180.0190 (typ.)350 (typ.)Q62703Q5014Q62703Q5015s LP T672-L2M2-1s LP T672-M2P1-1pure green14.0 ...28.022.4 ...56.062 (typ.)110 (typ.)Q65110Q0325Q65110Q03262003-09-043GrenzwerteMaximum Ratings Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit BetriebstemperaturOperating temperature range T op – 40 … + 100°C LagertemperaturStorage temperature range T stg – 40 … + 100°C Sperrschichttemperatur Junction temperature T j + 100°C DurchlassstromForward current (T A =25°C)I F 50mA Sto ßstrom Surge currentt ≤ 10 µs, D = 0.005, T A =25°C I FM1ASperrspannung 1)Reverse voltage (T A =25°C)V R 12V LeistungsaufnahmePower consumption (T A =25°C)P tot160mWW ärmewiderstand Thermal resistanceSperrschicht/Umgebung 2)Junction/ambient 2)Sperrschicht/L ötpad Junction/solder pointR th JA R th JS30080K/W K/W1)f ür kurzzeitigen Betrieb geeignet / suitable for short term application 2)Montage auf PC-Board FR 4 (Padgr öße ≥ 16mm 2)mounted on PC board FR 4 (pad size ≥ 16mm 2)2003-09-044Kennwerte (T A = 25 °C)Characteristics Bezeichnung ParameterSymbol SymbolWerte ValuesEinheit Unit LGLP Wellenl änge des emittierten Lichtes (typ.)Wavelength at peak emission I F = 50mAλpeak572557nmDominantwellenl änge 1)Dominant wavelength I F = 50mAλdom570560nmSpektrale Bandbreite bei 50 % I rel max (typ.)Spectral bandwidth at 50 % I rel max I F = 50mA∆λ2522nmAbstrahlwinkel bei 50 % I V (Vollwinkel)(typ.) Viewing angle at 50 % I V (typ.) 2ϕ120120Grad deg.Durchlassspannung 2)(typ.)Forward voltage (max.)I F = 50mA V F V F 2.63.5 2.62.7V VSperrstrom(typ.)Reverse current (max.)V R = 12 VI R I R 0.01100.0110µA µATemperaturkoeffizient von λpeak (typ.)Temperature coefficient of λpeak I F = 50mA; –10°C ≤ T ≤ 100°C TC λpeak0.110.11nm/KTemperaturkoeffizient von λdom (typ.)Temperature coefficient of λdom I F = 50mA; –10°C ≤ T ≤ 100°C TC λdom0.070.05nm/KTemperaturkoeffizient von V F (typ.)Temperature coefficient of V F I F = 50mA; –10°C ≤ T ≤ 100°C TC V– 2.0– 2.0mV/KOptischer Wirkungsgrad (typ.)Optical efficiency I F = 50mAηopt1.50.6lm/W1)Wellenl ängen werden mit einer Stromeinpr ägedauer von 25ms und einer Genauigkeit von ±1nm ermittelt.Wavelengths are tested at a current pulse duration of 25ms and a tolerance of ±1nm.2)Spannungswerte werden mit einer Stromeinpr ägedauer von 1ms und einer Genauigkeit von ±0,1V ermittelt.Voltages are tested at a current pulse duration of 1ms and a tolerance of ±0.1V.2003-09-045Helligkeitswerte werden mit einer Stromeinpr ägedauer von 25ms und einer Genauigkeit von ±11% ermittelt.Luminous intensity is tested at a current pulse duration of 25ms and a tolerance of ±11%.Helligkeits-Gruppierungsschema Luminous Intensity Groups LichtgruppeLuminous Intensity Group Lichtst ärkeLuminous Intensity I V (mcd)Lichtstrom Luminous Flux ΦV (mlm)L2M1M2N1N2P1P2Q1Q2R1R214.0 …18.018.0 …22.422.4 …28.028.0 …35.535.5 …45.045.0 …56.056.0 …71.071.0 …90.090.0 …112.0112.0 …140.0140.0 …180.050 (typ.)60 (typ.)75 (typ.)95 (typ.)120 (typ.)150 (typ.)190 (typ.)240 (typ.)300 (typ.)380 (typ.)480 (typ.Relative spektrale Emission I rel = f (λ), T A = 25 °C, I F = 50mA Relative Spectral EmissionV(λ) = spektrale AugenempfindlichkeitStandard eye response curveAbstrahlcharakteristik I rel = f (ϕ)2003-09-046Durchlassstrom I F = f (V F)Forward CurrentMaximal zulässiger Durchlassstrom I F = f (T) Max. Permissible Forward Current Relative Lichtstärke I V/I V(50mA) = f (I F) Relative Luminous IntensityMaximal zulässiger Durchlassstrom I F = f (T)Max. Permissible Forward Current2003-09-047Relative Lichtstärke I V/I V(25 °C) = f (T A) Relative Luminous IntensityZulässige Impulsbelastbarkeit I F = f (t p) Permissible Pulse Handling Capability2003-09-048MaßzeichnungPackage OutlinesMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Kathodenkennung:abgeschrägte EckeCathode mark:bevelled edgeGewicht / Approx. weight:35mg2003-09-049Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil(nach IPC 9501)IR Reflow Soldering Profile(acc. to IPC 9501)2003-09-0410Wellenlöten (TTW)(nach CECC 00802)TTW Soldering(acc. to CECC 00802)2003-09-0411Empfohlenes Lötpaddesign IR-Reflow LötenRecommended Solder Pad IR Reflow SolderingMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Gehäuse hält TTW-Löthitze aus / Package able to withstand TTW-soldering heat2003-09-0412Empfohlenes Lötpaddesign verwendbar für TOPLED® und Power TOPLED®IR Reflow LötenRecommended Solder Pad useable for TOPLED® and Power TOPLED®IR Reflow SolderingMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2003-09-0413Gurtung / Polarität und Lage Verpackungseinheit2000/Rolle, ø180 mmoder 8000/Rolle, ø330 mmMethod of Taping / Polarity and Orientation Packing unit2000/reel, ø180 mmor 8000/reel, ø330 mmMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).Anm.:Bezüglich Trockenverpackung finden Sie weitere Hinweise im Internet und in unserem Short Form Catalog im Kapitel “Gurtung und Verpackung” unter dem Punkt “Trockenverpackung”. Hier sind Normenbezüge, unter anderem ein Auszug der JEDEC-Norm, enthalten.Note:Regarding dry pack you will find further information in the internet and in the Short Form Catalog in chapter “Tape and Reel” under the topic “Dry Pack”. Here you will also find the normative references like JEDEC.2003-09-04142003-09-0415Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved.Attention please!The information describes the type of component and shall not be considered as assured characteristics.All typical data and graphs are basing on representative samples, but don ’t represent the production range. If requested,e.g. because of technical improvements, these typ. data will be changed without any further notice.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version in the Internet.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system.2Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.Revision History:2003-09-04Date of changePrevious Version:2003-08-04Page Subjects (major changes since last revision)9change of weight from 40mg to 35mg 2002-06-2814annotations2002-07-2313recomm. solder pad for TOPLED ® and Power TOPLED ® (OHLPY440)2002-08-053, 4value (reverse voltage from 5V to 12V)2002-09-182Ordering Code 2002-09-16all nor for new designs 2002-11-181, 2Obsolete 2003-08-0414note: dry pack 2003-09-043ambient temperature2003-09-04。

1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。

Hyper Multi TOPLED ®Hyper-Bright LEDLSY T676Besondere Merkmaleq Gehäusebauform: P-LCC-4q Gehäusefarbe: weißq als optischer Indikator einsetzbarq zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung q beide Leuchtdiodenchips getrennt ansteuerbarq hohe Signalwirkung durch Farbwechsel der LED möglich qbei geeigneter Ansteuerung, Farbwechsel von grün über gelb und orange bis super-rot möglichq für alle SMT-Bestück- und Löttechniken geeignet q gegurtet (8-mm-Filmgurt)q Störimpulsfest nach DIN 40839Featuresq P-LCC-4 packageq color of package: white q for use as optical indicatorq for backlighting, optical coupling into light pipes and lenses q both chips can be controlled separatelyq high signal efficiency possible by color change of the LED qwith appropriate controlling it is possible to change color from green to yellow and orange to super-redq suitable for all SMT assembly and soldering methods q available taped on reel (8 mm tape)q load dump resistant acc. to DIN 40839TypTypeEmissions-farbe Color of Emission Farbe der Lichtaus-trittsfläche Color of the Light EmittingArea Lichtstärke Luminous Intensity I F = 20 mA I V (mcd)BestellnummerOrdering Codesuper-redyellowLSY T676LSY T676-P+P LSY T676-P+Q LSY T676-P+R LSY T676-Q+Q LSY T676-Q+Rsuper-red /yellowcolorless clear≥ 4040...8040...8040...8063 (12563) (125)≥ 4040...8063...125100...20063...125100...200Q62703-Q3428V P L 06837Grenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitLS LYBetriebstemperatur Operating temperature range Top– 55 ... + 100˚CLagertemperaturStorage temperature range Tstg– 55 ... + 100˚CSperrschichttemperatur Junction temperature Tj+ 100˚CDurchlaßstrom Forward current IF3020mAStoßstromSurge currentt≤10µs,D = 0.005IFMto be defined ASperrspannung Reverse voltage VR3VVerlustleistung Power dissipation Ptot8055mWWärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / airMontage auf PC-Board*) (Padgröße≥ 16 mm 2) mounted on PC board*) (pad size≥ 16 mm 2)Rth JA1)Rth JA2)500600K/WK/W*)PC-board: FR41)nur ein Chip betrieben1)one system only2)beide Chips betrieben2)both systems on simultaneouslyNotesDie angegebenen Grenzdaten gelten für einen Chip.The stated maximum ratings refer to one chip.Kennwerte (T A = 25 ˚C)Characteristics Bezeichnung ParameterSymbol SymbolWert ValueEin-heit Unit LSLY Wellenlänge des emittierten Lichtes (typ.)Wavelength at peak emission (typ.)I F = 10 mAλpeak 645591nmDominantwellenlänge (typ.)Dominant wavelength (typ.)I F = 10 mAλdom 630587nmSpektrale Bandbreite bei 50 %I rel max (typ.)Spectral bandwidth at 50 %I rel max (typ.)I F = 10 mA∆λ1615nmAbstrahlwinkel bei 50 %I V (Vollwinkel)Viewing angle at 50 %I V 2ϕ120120Grad deg.Durchlaßspannung (typ.)Forward voltage (max.)I F = 20 mA V F V F 2.02.6 2.02.6V V Sperrstrom(typ.)Reverse current (max.)V R = 3 VI R I R0.01100.0110µA µA Temperaturkoeffizient von λdom (I F = 20 mA)Temperature coefficient of λdom (I F = 20 mA)TC λ0.0140.096nm/K Temperaturkoeffizient von λpeak ,I F = 20 mA(typ.)Temperature coefficient of λpeak ,I F = 20 mA(typ.)TC λ0.140.13nm/KTemperaturkoeffizient von V F , I F = 20 mA (typ.)Temperature coefficient of V F , I F = 20 mA(typ.)TC V – 1.95– 2.51mV/KRelative spektrale Emission I rel=f (λ),T A = 25 ˚C,I F= 10 mA Relative spectral emissionV (λ) =spektrale AugenempfindlichkeitStandard eye response curveAbstrahlcharakteristik I rel=f (ϕ)Radiation characteristicDurchlaßstrom I F =f (V F )Forward current T A = 25 ˚CRelative Lichtstärke I V /I V(20 mA) =f (I F )Relative luminous intensity T A= 25 ˚CMaximal zulässiger Durchlaßstrom I F =f (T A )Max. permissible forward currentZulässige Impulsbelastbarkeit I f =f (t p )Permissible pulse handling capability D = Parameter;T A = 25°CRelative Lichtstärke I V /I V(25 ˚C)=f (T A )Relative luminous intensity I F = 10 mAMaßzeichnung (Maße in mm, wenn nicht anders angegeben)Package Outlines(Dimensions in mm, unless otherwise specified)G P L 06837L SYT676LEDEmission color 1Emission color 2Packagecathode: pin 1cathode: pin 3。