D882中文资料_数据手册_参数

2SD882L-C-T6C-T中文资料

UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。

ASTMD882-02（中文）塑料薄板材抗拉特性的试验方法[1]

ASTMD882-02（中⽂）塑料薄板材抗拉特性的试验⽅法[1]ASTM D 882-02 : 测量塑料薄膜和薄⽚材拉伸性能测量塑料薄膜和薄⽚材拉伸性能的标准⽅法1. 测试应⽤范围1.1本测试⽤于测试塑料薄膜和⽚材（厚度⼩于1.0毫⽶）的拉伸性能。

注1——⽚材厚度⼩于0.25毫⽶（0.01英⼨）的即被定义为薄膜。

注2——厚度为1.0毫⽶（0.04英⼨）或者更厚⽚材的拉伸测试试验要根据D638进⾏。

1.2本测试应该被⽤来测试所有在所描述的厚度范围以内以及在要使试验机的负荷量程以内的全部塑料材料。

1.2.1静态过磅——恒定分离速率的夹具分离测试——在本⽅法中，夹具以恒定的速度抓住试样的⼀端将其分离。

1.3在这些测试⽅法中，测量试样的伸长可以从夹具分离距离、伸长指⽰器和标距线的位移得出。

1.4包括了在⼀个应变速率时测试拉伸弹性模量的步骤。

注3：模量的测量⼀般基于夹具分离的距离作为试样的伸长值。

然⽽，本标准也包括了使⽤如图5.2所述的伸长仪的情况。

1.5本测试所得的数据适⽤于⼯程设计或与其相关。

1.6 SI制单位即作为标准单位。

括号内的数值仅供参考。

1.7 本标准不适⽤于解决所相关的所有安全问题，仅涉及到它的应⽤。

建⽴相关的安全健康规则和使⽤前相关规定是使⽤者的责任。

规定2给出了相关的安全参考⽂献。

注4—本测试与ISO527-3类似，但在技术上⼆者并不能等同。

在ISO527-3中允许其他试样类型，特定的测试速度并要求使⽤伸长计或在试样上作测量标线。

2.参考⽂献2.1 ASTM标准D 618放置测试塑料的实施⽅法。

D 638测试塑料的拉伸⽅法。

D 4000塑料材料的分类⽅法。

E 4 试验机的负荷校正⽅法。

E 691 在实验室间进⾏测试精密度检测的⽅法。

2.2 ISO标准ISO527-3确定塑料的拉伸性质—第三部分：塑料薄膜和⽚材的测试条件。

3. 术语3.1定义——与塑料拉伸相关的术语或者符号在D 638的附件中。

2SD882-X-T9N-B中文资料

UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。

2SD882-C-T6C-B中文资料

UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。

2SD882;中文规格书,Datasheet资料

October 2007Rev 31/82SD882NPN medium power transistorFeatures■High current■Low saturation voltage ■Complement to 2SB772Applications■Voltage regulation ■Relay driver ■Generic switch ■Audio power amplifier ■DC-DC converterDescriptionThe device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.Table 1.Device summaryOrder code Marking Package Packing 2SD882D882SOT -32T ubeAbsolute maximum ratings2SD882 1 Absolute maximum ratingsTable 2.Absolute maximum ratingSymbol Parameter Value UnitV CBO Collector-base voltage (I E = 0) 60VV CEO Collector-emitter voltage (I B = 0) 30VV EBO Collector-base voltage (I C = 0) 5VI C Collector current3AI CM Collector peak current (t P < 5ms)6AI B Base current1AI BM Base peak current (t P < 5ms)2AP TOT T otal dissipation at T c = 25°C12.5WT STG Storage temperature-65 to 150°CT J Max. operating junction temperature150°CTable 3.Thermal dataSymbol Parameter Value UnitR thJ-case Thermal resistance junction-case max10°C/W 2/83/82 Electrical characteristics(T CASE = 25°C; unless otherwise specified)Table 4.Electrical characteristicsSymbol ParameterTest conditions Min.Typ.Max.Unit I CES Collector cut-off current(V BE = 0)V CE = 60 V 10µA I CEO Collector cut-off current (I B = 0)V CE = 30 V 100µA I EBOEmitter cut-off current (I C = 0)V EB = 5 V10µAV (BR)CEO(1)Collector-emitter breakdownvoltage (I B = 0 )I C = 10 mA 30VV (BR)CBO Collector-base breakdownvoltage(I E = 0 )I C = 100 µA60VV (BR)EBO Emitter-base breakdownvoltage(I C = 0 )I E = 100 µA5V V CE(sat)(1)Collector-emitter saturationvoltageI C = 1 A I B = 50 mAI C = 2 A I B = 100 mAI C = 3 A I B = 150 mA 0.40.71.1V V V V BE(sat)(1)1.Pulsed duration = 300 ms, duty cycle ≤1.5%.Base-emitter saturation voltage I C = 2 A I B = 100 mA 1.2Vh FE DC current gain I C = 100 mA V CE = 2 V I C = 1 A V CE = 2 V I C = 3 A V CE = 2 V 1008030300f TTransition frequencyI C = 0.1 A V CE = 10 V100MHzcharacteristics (curves) 2.1 Typical4/82SD882Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 5/8Package mechanical data2SD8826/82SD882Revision history7/84 Revision historyTable 5.Document revision historyDate RevisionChanges09-Sep-20052Final datasheet. New template 02-Oct-20073Updated mechanical data2SD8828/8Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS O THERWISE SET FO RTH IN ST’S TERMS AND CO NDITIO NS O F SALE ST DISCLAIMS ANY EXPRESS O R IMPLIED WARRANTY WITH RESPECT TO THE USE AND/O R SALE O F ST PRO DUCTS INCLUDING WITHO UT LIMITATIO N IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPRO VED IN WRITING BY AN AUTHO RIZED ST REPRESENTATIVE, ST PRO DUCTS ARE NO T RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America分销商库存信息: STM2SD882。

2SD882L-D-T6C-K中文资料

UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。

882D新翻译

军用标准882D（重点提出了mishap的概念）1、范围1.1范围：该文件为指导系统安全的实施概述了一个准则。

正如此中所定义的那样，系统安全标准遵照国防部5000.2-R中规定的程序，并提供一个统一的评价可识别风险的方法。

一定要识别、评价事故风险，或将其降低到一个可以被政府接受的水平（这个水平是由系统使用者或顾客所决定的），并且与联邦政府（或使用它的州）的法律、法规、行政命令、条款和合约相符合。

在降低事故风险的研究中，采取任何措施时必须考虑全寿命周期的成本问题。

对于一个具体招标和合同来说，当需要查询军用标准882时会发现，在这个标准中没有针对这个合同具体的规定，只有应用在第四部分中所提到的那些条件。

2、适用的文件这个标准中的第三、四、五部分没有适用的文件。

该部分内容不含有在这个标准中其它章节所引用的文件，也没有推荐使用额外的信息或例子。

3、定义3.1标准中所使用的首字母缩略词。

定义如下：a.AMSDL采购管理系统和数据需求清单b.ANSI美国国家标准研究所c.DID数据项目表述d.DOD国防部e.ESH环境、安全和健康f.GEIA政府电子信息技术学会g.MAIS专业自动化信息系统h.MDAP主要防御获取大纲AF美国空军3.2定义。

在该标准中，应用到了如下定义（见6.4）3.2.1采购大纲（采购计划）：为提供一个新型的，改进的或是在用的系统而进行的具有指导性且有资金支持的工作，从而满足操作合法化的需要。

3.2.2开发商：经授权负责开发工作的个人或单位。

政府或承包商均可。

3.2.3危险：能够引发人员伤害、疾病、死亡，设备或财产的损失或损坏，环境危害的一种真实或潜在的状态。

（危险是事故发生的必要条件。

）3.2.4危险物质：由于化学、物理或生物特性而引起安全、公共健康、环境危害的物质。

这种物质需要进一步加强管理。

3.2.5寿命周期：系统寿命周期的所有阶段，包括设计、研制、开发、试验和评价、生产、使用、维护、报废的各个阶段。

2SD882-E-T9N-R中文资料

UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。