2SB1091中文资料
JIS B标准查询
JIS B 0001—JIS B0050JIS B0001 ERRATUM 1-2000 机械工程技术制图(勘误1)（缺）JIS B0001-2000 机械工程技术制图JIS B0002-1982 技术制图JIS B0002-1-1998 技术制图.螺钉和螺纹部件.第1部分:通用规范JIS B0002-2-1998 技术制图.螺钉和螺纹部件.第2部分:螺纹嵌镶件JIS B0002-3-1998 技术制图.螺钉和螺纹部件.第3部分:简化表示JIS B0003-1989 齿轮的制图室实施规范JIS B0004-1995 弹簧画法JIS B0005-1-1999 技术绘图.滚动轴承.第1部分:一般简化图解JIS B0005-2-1999 技术绘图.滚动轴承.第2部分:细节简化图解JIS B0006-1993 技术制图.花键和锯齿形花键的画法JIS B0011-1-1998 技术制图.管道的简化表示法.第1部分:通则和正交表示法JIS B0011-2-1998 技术制图.管道的简化表示法.第2部分:等角投影JIS B0011-3-1998 技术制图.管道的简化表示法.第3部分:通风和排水系统终端部JIS B0021-1998 几何产品规范(GPS).几何公差.形状、方向、定位和偏转公差JIS B0022-1984 几何公差的基准及基准系统JIS B0023-1996 技术制图.几何公差.最大和最小的实体公差要求JIS B0024-1988 制图.公差表示方式的基本原则JIS B0025-1998 机械制图.几何公差.位置公差JIS B0026-1998 技术制图.尺寸和公差.非钢性部件JIS B0027-2000 技术制图.剖面的尺寸和公差表示JIS B0028-2000 技术制图.尺寸和公差表示.锥形JIS B0029-2000 技术制图.方向和位置的公差表示.突出公差带JIS B0031-2003 表面特征标注方法JIS B0031-1994 表面特征标注方法JIS B0041-1999 技术绘图.中心孔简化图解JIS B0051-2004 技术绘图.未定义形状的边缘.词汇和指示JIS B0090-1-2001 光学元件和系统图的绘制.第1部分:总则JIS B0090-2-2001 光学元件和系统图的绘制.第2部分:材料缺陷.应力双折射JIS B0090-3-2001 光学元件和系统图的绘制.第3部分:材料缺陷.起泡和杂质JIS B0090-4-2001 光学元件和系统图的绘制.第4部分:材料缺陷.不均匀和擦痕JIS B0090-5-2001 光学元件和系统图的绘制.第5部分:表面形式公差JIS B0090-6-2001 光学元件和系统图的绘制.第6部分:中心校正公差JIS B0090-7-2001 光学元件和系统图的绘制.第7部分:表面缺陷公差JIS B0090-8-2001 光学元件和系统图的绘制.第8部分:表面结构JIS B0090-9-2001 光学元件和系统图的绘制.第9部分:表面处理和涂覆JIS B0090-10-2001 光学元件和系统图的绘制.第10部分:表示透镜元件数据的表JIS B0090-11-2001 光学元件和系统图的绘制.第11部分:不包含公差的数据JIS B0090-12-2001 光学元件和系统图的绘制.第12部分:非球型表面JIS B0100-1984 阀门术语JIS B 0101—JIS B 0130JIS B0101-1994 紧固件术语JIS B0102-1999 齿轮术语.与几何有关的定义JIS B0103-2005 弹簧词汇JIS B0104-1991 滚动轴承.词汇JIS B0105-1993 机床.设计.词汇JIS B0106-1996 机床.部件及操作方法.词汇JIS B0107-1991 单刃刀具术语JIS B0108-1-1999 往复式内燃机,词汇.第1部分:引擎设计和操作术语JIS B0108-2-1999 往复式内燃机.词汇.第2部分:引擎维护术语JIS B0109-1-1999 往复式内燃机.元件和系统词汇.第1部分:结构和外壳JIS B0109-2-1999 词侥谌蓟?元件和系统词汇.第2部分:主要运行齿轮JIS B0109-3-1999 往复式内燃机.元件和系统词汇.第3部分:阀门,凸轮轴驱动和起动机械JIS B0109-4-1999 往复式内燃机.元件和系统词汇.第4部分:增压和空气消耗气体管道系统JIS B0109-5-1999 往复式内燃机.元件和系统词汇.第5部分:冷却系统JIS B0109-6-1999 往复式内燃机.元件和系统词汇.第6部分:润滑系统JIS B0109-7-1999 往复式内燃机.元件和系统词汇.第7部分:控制系统JIS B0109-8-1999 往复式内燃机.元件和系统词汇.第8部分:起动系统JIS B0109-9-1999 往复式内燃机.元件和系统词汇.第9部分:控制和检测系统JIS B0110-1999 往复式内燃机.特殊元件词汇JIS B0111-1997 印刷机械.词汇JIS B0112-1994 锻压.词汇JIS B0113-1989 工业用燃烧装置术语JIS B0114-1997 木材加工机械.词汇JIS B0115-1991 电子式现金收入记录机术语JIS B0116-1978 填料和密封垫术语JIS B0117-1991 办公机械术语JIS B0119-1992 水轮机及双向泵水轮机术语JIS B0121-1999 国际齿轮符号表示法.几何数据符号JIS B0122-1978 加工方法符号JIS B0123-1999 螺纹标识系统JIS B0124-1994 滚动轴承量值符号JIS B0125-1-2001 液压气动系统及元件.图形符号和电路图.第1部分:图形符号JIS B0125-2-2001 液压气动系统及元件.图形符号和电路图.第2部分:电路图JIS B0126-2005 火力发电术语.锅炉和附属装置JIS B0127-2004 火力发电厂术语汇编(汽轮机、地热发电设备和附属装置)JIS B0128-2005 火力发电.燃气轮机和附属装置.词汇JIS B0130-2006 火力发电术语.通用术语JIS B 0131—JIS B 0200JIS B0143-1985 螺钉各部尺寸名称及符号JIS B 0201—JIS B 0250JIS B0201-1973 微型螺纹JIS B0202-1982 圆柱管螺纹JIS B0203-1982 锥管螺纹JIS B0204-1982 电线管螺纹解说JIS B0205-1982 米制粗牙螺纹JIS B0206-1973 统一粗牙螺纹JIS B0207-1982 米制细牙螺纹JIS B0208-1973 统一细牙螺纹JIS B 0251—JIS B 0300JIS B0251-1998 米制粗牙螺纹极限量规JIS B0253-1985 锥形管螺纹量规JIS B0254-1985 圆柱管螺纹量规JIS B0255-1998 统一粗牙螺纹极限量规JIS B0261-2004 圆柱螺纹量规的检查方法JIS B 0301—JIS B 0500JIS B0401-1-1998 公差和配合的ISO系统.第1部分:公差、偏差和配合的基础JIS B0401-2-1998 公差和配合的ISO系统.第2部分:孔和轴的标准公差级和极限偏差表JIS B0403-1995 铸件.尺寸公差和机械加工余量体系JIS B0404-1977 尺寸的一般允许偏差通则JIS B0405-1991 普通公差. 第1部分:无单个公差指示的线性及角度尺寸公差JIS B0408-1991 金属板冲压加工件一般尺寸公差JIS B0410-1991 金属板剪切件一般公差JIS B0411-1978 金属烧结件一般允许偏差JIS B0415-1975 钢模锻件的尺寸公差(锤锻及压锻加工)JIS B0416-1975 钢模锻件的尺寸公差.镦锻加工JIS B0417-1979 气割钢板未标注的可允许尺寸偏差JIS B0418-1999 自由锻造件的加工余量JIS B0419-1991 一般公差.第2部分:未标注公差零件的几何公差JIS B 0600—JIS B 1000JIS B0601-2001 产品几何量技术规范.表面结构:轮廓法.术语、定义和表面结构参数JIS B 1001—JIS B 1100JIS B1001-1985 螺栓和螺纹用通孔与沉孔的直径JIS B1002-1985 螺钉头、螺母的对边宽度尺寸JIS B1003-2003 螺钉头部的形状与尺寸JIS B1004-1975 螺纹底径JIS B1005-2003 外螺纹紧固件头下圆角半径JIS B1006-1985 外螺纹紧固件螺纹尾部长度与退刀槽JIS B1007-2003 自攻螺钉的螺纹形状及尺寸JIS B1008-1988 螺栓、螺钉和螺柱的开口销槽和金属丝孔JIS B1009-1991 螺栓、螺钉和螺柱.一般用途螺栓的公称长度及螺纹长度JIS B1010-2003 紧固件的名称与符号体系JIS B1011-1987 中心孔JIS B1012-1985 螺钉头十字槽JIS B1013-1994 埋头螺钉.头部外形和量规JIS B1014-1994 埋头法兰头螺钉.第2部分:十字凹槽贯穿深度JIS B1015-2001 螺栓和螺钉的六小叶片内推进特性JIS B1021-2003 紧固件公差体系JIS B1022-1999 紧固件公差.第3部分:螺栓,螺钉和螺母的垫圈.A级和C级产品JIS B1041-1993 紧固件.表面缺陷.第1部分:普通要求用螺栓、螺钉和螺柱JIS B1042-1998 紧固件.表面不连续性.第2部分:螺母JIS B1043-1993 紧固件.表面缺陷.第3部分:特殊要求用螺栓、螺钉和螺柱JIS B1044-2001 紧固件.电镀覆层JIS B1045-2001 紧固件.氢蚀致脆探测的预加负荷试验.滑动轴承表面法JIS B1046-2005 紧固件.非电解锌粉覆盖层JIS B1047-2006 耐腐蚀不锈钢紧固件的钝化处理JIS B1051-2000 碳素钢和合金钢紧固件的机械特性.第1部分:螺栓、螺钉和螺柱JIS B1052-1998 钢制螺母的机械性能JIS B1053-1999 用碳钢和合金钢制成的紧固件的机械特性.不超过拉伸强度的紧固螺纹和类似螺纹紧固件JIS B1054-1-2001 耐腐蚀不锈钢紧固件的机械特性.第1部分:螺栓、螺钉和螺柱JIS B1054-2-2001 耐腐蚀不锈钢紧固件的机械特性.第2部分:螺母JIS B1054-3-2001 耐腐蚀不锈钢紧固件的机械特性.第3部分:无拉伸应力的定位螺钉和类似紧固件JIS B1054-4-2006 耐腐蚀不锈钢紧固件的机械特性.第4部分:自攻螺钉JIS B1055-1995 钢及不锈钢耐腐蚀紧固件的机械性能JIS B1056-2000 有效力矩型钢制六角头螺母.机械和操作性能JIS B1057-2001 有色金属紧固件的机械性能JIS B1058-1995 紧固件的机械特性.第7部分:扭力试验和螺栓和直径1mm-10mm螺栓和螺纹的最小转力JIS B1071-1985 紧固件几何尺寸的测定方法JIS B1081-1991 螺纹紧固件拉伸疲劳试验方法.试验方法和结果评定JIS B1082-1987 紧固件的应力面积和支撑面积JIS B1083-1990 螺纹紧固件的紧固通则JIS B1084-1990 螺纹紧固件的紧固试验方法JIS B1085-1995 螺母的圆锥装载试验JIS B1086-1998 螺母的加宽试验JIS B1087-2004 埋头铆钉.机械试验JIS B1091-2003 紧固件验收JIS B1092-2006 紧固件.质量保证体系JIS B1099-2005 紧固件.螺栓、螺钉、螺柱和螺母的一般要求JIS B 1101—JIS B 1150JIS B1101-1996 槽头螺钉JIS B1111-2006 十字头螺钉JIS B1112-1995 十字槽木螺钉JIS B1115-1996 槽头攻丝螺钉JIS B1116-1980 精密仪器用槽头机螺钉JIS B1117-1995 一字槽定位螺钉JIS B1118-1995 方头定位螺钉JIS B1119-1995 眼镜框架用小螺钉和螺母JIS B1122-1996 十字槽自攻丝螺钉JIS B1123-1996 六角头攻丝螺钉JIS B1125-1995 自钻孔自攻丝螺钉JIS B1126-1995 六角自攻螺钉垫圈JIS B1127 ERRATUM 1-2001 六角法兰头自攻螺钉(勘误1) JIS B1127-1995 六角自攻螺钉边缘JIS B1135-1995 有槽木螺钉。
BAS21J中文资料
BAS21J
Single high-speed switching diode
500 IF (mA)
400
mhc618
300
200
100
(1) (2) (3)
0
0
0.5
1 VF (V) 1.5
(1) Tamb = 150 °C (2) Tamb = 75 °C (3) Tamb = 25 °C
Fig 1. Forward current as a function of forward voltage; typical values
NXP Semiconductors
9. Package outline
BAS21J
Single high-speed switching diode
Description
BAS21J
SC-90
plastic surface-mounted package; 2 leads
Version SOD323F
4. Marking
Table 4. Marking codes Type number BAS21J
Marking code AN
BAS21J_1
I Voltage clamping I Reverse polarity protection
1.4 Quick reference data
Table 1. Symbol IF IR VR trr
Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time
1.2 Features
2SJ356-T2中文资料
Document No. D11218EJ1V0DS00 (1st edition)Date Published June 1996 PPrinted in Japan19962TYPICAL CHARACTERISTICS (T A = 25 ˚C)DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAd T - De r a t i n g F a c t o r -%2510080604020T A - Ambient Temperature - ˚CFORWARD BIAS SAFE OPERATING AREAI D - D r a i n C u r r e n t - A–0.5–10V DS - Drain to Source Voltage - V5075100125150–5–2–1–0.5–0.2–0.1–0.05–1–100–2–5–10–20–502SJ3563DRAIN TO SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENT R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω–0.00110.80.60.40.2I D - Drain Current - ADRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω010.80.60.40.2V GS - Gate to Source Voltage - V–10–0.01–0.1–1–20–2–4–6–8–10–12–14–16–18DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEI D - D r a i n C u r r e n t - A–5V DS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS I D - D r a i n C u r r e n t - A–1–10V GS - Gate to Source Voltage - VFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT |y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - S–0.000110I D - Drain Current - ADRAIN TO SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENT R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω–0.0011.5I D - Drain Current - A–1–2–3–4–5–4–3–2–1–2–3–4–1–0.1–0.01–0.001–0.0001–0.0000110.10.010.001–0.001–0.01–0.1–110.5–0.01–0.1–1–104TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTHrth(j-a)-TransientThermalResistance-˚C/W1 m1 000100101PW - Pulse Width - s10 m100 m110100Single pulseUsing ceramic substrate of7.5 cm2× 0.7 mmSOURCE TO DRAIN DIODEFORWARD VOLTAGEISD-DiodeForwardCurrent-A–0.2–10–1–0.1–0.01–0.001–0.0001V SD - Source to Drain Voltage - VCAPACITANCE vs.DRAIN TO SOURCE VOLTAGECiss,Coss,Crss-Capacitance-pF–110 0001 00010010V DS - Drain to Source Voltage - V SWITCHING CHARACTERISTICStd(on),tr,td(off),tf-SwitchingTime-ns1 00010010I D - Drain Current - AREVERSE RECOVERY TIME vs.DIODE FORWARD CURRENTtrr-ReverseRecoveryTime-ns–0.051 00010010I F - Diode Forward Current -A–1.2–0.4–0.6–0.8–1.0V GS = 0Pulsed–10–100–1–10–10–0.1–0.5–1–5V GS = 0di/dt = 50 A/ sµREFERENCEDocument Name Document No.NEC semiconductor device reliability/quality control system TEI-1202Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535EGuide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E5[MEMO]No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。
2SB系列三极管参数
2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1068 SI-P 20V 2A 0.75W 180MHz | 2SB1071 SI-P 40V 4A 25W 150MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K 2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K 2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 20 2SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K 2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K 2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K 2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB511E SI-P 35V 1.5A 10W 8MHz | 2SB524 SI-P 60V 1.5A 10W 70MHz2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us 2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K 2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz 2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K 2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=42SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/2200。
2SB1201 PDF规格书
■ Typical Characterisitics
PNP Transistors 2SB1201
TO-252
+0.15 1.50 -0.15
Unit: mm
■ Features
●Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801
2.3
+0.15 4 .60 -0.15
+ 0.1 0.600.1
1 Base 2 Collector 3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature range Tc = 25℃ Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating -60 -50 -6 -2 -4 15 0.8 150 -55 to 150 A W V Unit
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 2.30 -0.1 +0.8 0.50 -0.7
2SB系列晶体管参数
结构 PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
松下 松下 松下 松下 日立 松下 松下 松下 松下 日电
日电 日电 日电 日电 日电 日电 日电 三洋 日电 日电 三洋 三洋 三洋 松下 罗姆 罗姆 三洋 三洋 三洋 三洋 日立 东芝 东芝 松下 日电 日电 富士电机 富士电机 罗姆 罗姆 日立 日立 日立 日立 日立 日立 富士电机 东芝 三洋 松下 松下 松下 日立 三洋
vcbo(V) -60 -50 -110 -60 -60 -35 -130 -130 -25 -200 -200 -100 -100 -100 -220 -70 -180 -20 -100 -25 -25 -30 -70 -70 -100 -80 -25 -100 -500 -60 -30 -60 -30 -100 -120 -25 -35 -100 -50 -100 -100 -60 -30 -60 -120 -120 -120 -120 -180 -180 -180 -180 -100
2SJ117中文资料(hitachi)中文数据手册「EasyDatasheet - 矽搜」
脉冲测试
–2 漏电流I
–1
TC = –25°C
25°C 75°C
0
–2 –4
门源电压V
–6 –8 –10 GS (V)
3
芯片中文手册,看全文,戳
2SJ117
(V) –20
DS (on)
–16
漏极至源极饱和电压 与门源电压
–12
–8
–4
脉冲测试
漏极至源极饱和电压V
–5 –10 –20 D (A)
静态漏极至源关于国家
电阻与温度
10 VGS = 15 V ID = –1 A
8
(Ω) 6
DS (on)
R4
2
静态漏极至源极导通电阻
0 –40 0 40
案例温T
80 120 160 C (°C)
1,0000 3,000
典型的电容与 漏源极电压
VGS = 0 F = 1兆赫
漏极至源极电压V
DS (V)
典型的输出特性
–2.0 –15 V 0V
–1
–1.6
(A)
TC = 25°C
–6 V –5 V
D
–1.2
–4.5 V
–0.8 漏电流I
–4 V –0.4
VGS = –3 V
0
–4 –8 –12 –16 –20
漏极至源极电压V
DS (V)
–5
–4 (A)
D
–3
典型的传输特性
1,000 300
电容C（1P0F0） 30
Ciss Coss
10
Crss
3
1 0 –40 –80 –120 –160 –200
漏极至源极电压V
2SB546中文资料
Absolute maximum ratings (Ta=25 )
2
元器件交易网
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB546
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
元器件交易网
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors
2SB546
4
2SB546
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT V V V
-1.0 -50 -50 240
V µA µA
MHz
hFE classifications R 40-80 O 70-140 Y 120-240
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -5 -2 25 150 -55~150 UNIT V V V A W
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2SB1091Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings Unit–60V Collector to base voltage VCBO–60V Collector to emitter voltage VCEO–7V Emitter to base voltage VEBOCollector current I–8AC–12A Collector peak current IC(peak)*140W Collector power dissipation PCJunction temperature Tj150°C Storage temperature Tstg–55 to +150°C Note: 1.Value at T= 25°C.C2SB10912Electrical Characteristics (Ta = 25°C)ItemSymbolMin Typ Max Unit Test conditions Collector to emitter breakdown voltageV (BR)CEO –60——V I C = –25 mA, R BE = ∞Emitter to base breakdown voltageV (BR)EBO –7——V I E = –50 mA, I C = 0Collector cutoff current I CBO ——–100µA V CB = –60 V, I E = 0I CEO ——–10µAV CE = –50 V, R BE = ∞DC current transfer ratio h FE 1000—20000V CE = –3 V, I C = –4 A*1Collector to emitter saturation V CE(sat)1——–1.5V I C = –4 A, I B = –8 mA*1voltageV CE(sat)2——–3.0V I C = –8 A, I B = –80 mA*1Base to emitter saturation V BE(sat)1——–2.0V I C = –4 A, I B = –8 mA*1voltage V BE(sat)2——–3.5V I C = –8 A, I B = –80 mA*1Turn on time t on — 1.0—µs I C = –4 A, I B1 = –I B2 = –8 mAStorage time t stg — 2.5—µs Fall time t f—0.5—µs Note:1.Pulse Test.2SB109132SB10914Hitachi CodeJEDECEIAJWeight (reference value)TO-220ABConformsConforms1.8 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。