2N5087中文资料

Amplifier TransistorPNP SiliconMAXIMUM RATINGSTHERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)OFF CHARACTERISTICS1.Pulse T est: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.Preferred devices are ON Semiconductor recommended choices for future use and best overall value.ON Semiconductor t1Publication Order Number:2N5087ON Semiconductor Preferred DeviceCOLLECTOR21EMITTERELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted) (Continued)1.Pulse T est: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.TYPICAL NOISE CHARACTERISTICS(V CE = –5.0 Vdc, T A = 25°C)Figure 1. Noise Voltage f, FREQUENCY (Hz)5.07.0103.0Figure 2. Noise Currentf, FREQUENCY (Hz)1.0102050100200500 1.0Ăk 2.0Ăk5.0Ăk10Ăke n , N O I S E V O L T A G E (n V )102050100200500 1.0Ăk 2.0Ăk 5.0Ăk10Ăk2.0NOISE FIGURE CONTOURS(V CE = –5.0 Vdc, T A = 25°C)500Ăk 1002005001.0Ăk 10Ăk 5.0Ăk 20Ăk 50Ăk 100Ăk 200Ăk 2.0Ăk 1.0ĂM 500Ăk 1002005001.0Ăk 10Ăk 5.0Ăk 20Ăk 50Ăk 100Ăk 200Ăk 2.0Ăk 1.0ĂM Figure 3. Narrow Band, 100 Hz I C , COLLECTOR CURRENT (µA)Figure 4. Narrow Band, 1.0 kHzI C , COLLECTOR CURRENT (µA)10R S , S O UR CE R E S I S T A N C E (O H M S )R S , S O U R C E R E S I S T A N C E (O H M S )Figure 5. WidebandI C , COLLECTOR CURRENT (µA)10R S , S O U R C E R E S I S T A N C E (O H M S )Noise Figure is Defined as:NF +20log 10ƪe n 2)4KTR S )I n 2R S 24KTR Sƫ1ń2= Noise Voltage of the Transistor referred to the input. (Figure 3)= Noise Current of the Transistor referred to the input. (Figure 4)= Boltzman’s Constant (1.38 x 10–23 j/°K)= T emperature of the Source Resistance (°K)= Source Resistance (Ohms)e n I n K T R S 203050701002003005007001.0Ăk10203050701002003005007001.0Ăk500Ăk 1002005001.0Ăk 10Ăk 5.0Ăk 20Ăk 50Ăk 100Ăk 200Ăk 2.0Ăk 1.0ĂM 203050701002003005007001.0Ăkh , D C C U R R E N T G A I NF E I C , COLLECTOR CURRENT (mA)1.4I C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )Figure 9. “On” Voltages 0.40.60.81.00.2V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )Figure 10. Temperature Coefficients1.21.00.80.60.40.20C , C A P A C I T A N C E (p F )Figure 11. Turn–On TimeI C , COLLECTOR CURRENT (mA)500Figure 12. Turn–Off TimeI C , COLLECTOR CURRENT (mA)Figure 13. Current–Gain — Bandwidth Product I C , COLLECTOR CURRENT (mA)Figure 14. CapacitanceV R , REVERSE VOLTAGE (VOLTS)Figure 15. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 16. Output AdmittanceI C , COLLECTOR CURRENT (mA)5000.510t , T I M E (n s )f ă, C U R R E N T -G A I N Ċ B A N D W I D T H P R O D U C T (M H z )T h i e , I N P U T I M P E D A N C E (k )Ω 5.07.010203050701003005070100200300 1.02.03.05.07.00.20.30.50.71.02.03.05.07.01020200-5.0-7.0-50-70Figure 17. Thermal Responset, TIME (ms)1.0r (t ) T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )0.010.020.030.050.070.10.20.30.50.750ĂkT J , JUNCTION TEMPERATURE (°C)104I C , C O L L E C T O R C U R R E N T (n A )Figure 19. Typical Collector Leakage Current400I C , C O L L E C T O R C U R R E N T (m A )DESIGN NOTE: USE OF THERMAL RESPONSE DATAA train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles.To find Z θJA(t), multiply the value obtained from Figure 17 by the steady state value R θJA .Example:The 2N5087 is dissipating 2.0 watts peak under the follow-ing conditions:t 1 = 1.0 ms, t 2 = 5.0 ms (D = 0.2)Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22.The peak rise in junction temperature is therefore∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at .The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation.Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.The data of Figure 18 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) ≤ 150°C. T J(pk)may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.10-210-11001011021034.06.010204060100200PACKAGE DIMENSIONSCASE 29–11ISSUE ALTO–92 (TO–226)NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500---12.70---L 0.250--- 6.35---N 0.0800.105 2.04 2.66P ---0.100--- 2.54R 0.115--- 2.93---V0.135--- 3.43---EMITTER2.BASE3.COLLECTORON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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